SI1563DH-T1-E3 vs SI1553DL-T1-E3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci SI1563DH-T1-E3 disebabkan oleh Vishay Intertechnology dan SI1553DL-T1-E3 disebabkan oleh Vishay Intertechnology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Vishay Intertechnology
SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay
SI1563DH-T1-E3 ✓ AktifVishay Intertechnology
SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay
SI1553DL-T1-E3 ✓ AktifPengandingan Spesifikasi
| Parametr | SI1563DH-T1-E3 | SI1553DL-T1-E3 |
|---|---|---|
| Merek | Vishay Intertechnology | Vishay Intertechnology |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Complementary N/P-Channel MOSFET array | N-Channel + P-Channel (Complementary Pair) |
| Drain-Source Voltage (VDS) | 20 V (N-channel and P-channel) | 20 V |
| N-Channel Continuous Drain Current (ID) | 1.13 A | — |
| P-Channel Continuous Drain Current (ID) | 880 mA | — |
| Total Device Power Dissipation (PD) | 570 mW | — |
| Gate Threshold Type | Low-threshold (logic-level compatible) | — |
| Kemasan | SC-70-6 (SOT-363), 6 pins | SC-70-6 (SOT-363 / SC-88) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | TrenchFET (Vishay Gen III) | TrenchFET |
| Polarity | N-channel + P-channel (complementary pair) | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 °C to +150 °C |
| Lead-Free | Yes (per Vishay ordering info) | — |
| Boson Bebas | Per ordering option Si1563DH-T1-GE3 | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Status RoHS | Compliant | Compliant (RoHS Directive 2002/95/EC) |
| Manufacturer | — | Vishay Siliconix |
| Gate-Source Voltage (VGS) | — | ±8 V |
| Continuous Drain Current N-Ch (ID) | — | 660 mA |
| Continuous Drain Current P-Ch (ID) | — | 410 mA |
| On-Resistance N-Ch (RDS(on)) | — | 5 Ω typical @ VGS = 2.5 V |
| On-Resistance P-Ch (RDS(on)) | — | [DATA_NEEDED: RDS(on) P-channel] |
| Gate Threshold Voltage (VGS(th)) | — | 0.9 V typical |
| Total Power Dissipation | — | 270 mW |
| Halogen-Free Option | — | Yes (per IEC 61249-2-21) |
| Lead (Pb) Content | — | Lead-free (E3 suffix) |