STS5DNF60L vs STS4DNF60L Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STS5DNF60L disebabkan oleh STMicroelectronics dan STS4DNF60L disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

STMicroelectronics
STS4DNF60L STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST

STS4DNF60L ✓ Aktif

Pengandingan Spesifikasi

Parametr STS5DNF60L STS4DNF60L
Merek STMicroelectronics STMicroelectronics
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-to-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D) at 25 °C 5 A per channel —
On-Resistance R_DS(on) (typ.) 35 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) (max) 45 mΩ at V_GS = 10 V, I_D = 2 A < 0.055 Ω
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) value] —
Gate Charge Q_g [DATA_NEEDED: Q_g total gate charge value] —
Technology STripFET II trench N-channel STripFET (strip-based, 2nd generation)
Configuration Dual independent N-channel —
Kemasan SO-8 (8-SOIC, surface mount) SO-8 (8-pin, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Power Dissipation P_D (per datasheet) 2 W —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature min/max] -55 °C to +175 °C (junction)
Automotive Grade Automotive-grade qualified —
RoHS Compliance Compliant —
Avalanche Rating 100% avalanche tested —
Aras MSL [DATA_NEEDED: MSL rating] 1 per JEDEC J-STD-020
Jenis Transistor — Dual N-Channel MOSFET Array
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D) — 4 A per channel
On-Resistance R_DS(on) (typ) — 0.045 Ω at V_GS = 10 V
Total Power Dissipation (P_tot) — 2 W
Gate-Source Threshold Voltage — [DATA_NEEDED: V_GS(th) minimum/typical/maximum]
Gate Drive — Low threshold drive (logic-level compatible)
Number of Channels — 2 (dual N-channel on one die)
Status RoHS — Compliant
Lead-Free — Yes
Manufacturing Process — STripFET "Single Feature Size" strip-based process

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