IGB10N60TATMA1 - 600V 20A TRENCHSTOP IGBT | Infineon
MPN: IGB10N60TATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.89 | $945.00 |
| 1,000 | $1.62 | $1,620.00 |
IGB10N60TATMA1 Overview
An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that merges the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. It is widely used as a high-voltage, high-current switching element, sitting in the broader hierarchy: IGBT -> power transistor -> discrete semiconductor -> power management. The fieldstop layer shortens the drift region, reducing conduction and switching losses simultaneously.
Key features of the IGB10N60TATMA1 include a 600 V collector-emmitter breakdown voltage, 20 A continuous collector current at TC=25C, 110 W maximum power dissipation, low saturation voltage VCE(sat), and short-circuit ruggedness for inductive load commutation. The TRENCHSTOP3 cell geometry reduces on-state loss and tail current versus previous-generation NPT IGBTs, enabling higher switching frequencies in hard-switched topologies.
The device is optimized for hard-switching applications up to 20 kHz with low EMI and robust dynamic performance. Its integrated gate-emitter protection and wide safe operating area support motor drives, solar inverters, and welding equipment where inductive switching stresses are common.
Typical applications include uninterruptible power supplies (UPS), solar microinverters, induction cooking, switch-mode power supplies, and motor control inverters. The D2Pak footprint is compatible with industry-standard TO-263-3 land patterns.
When designing with this device, calculate switching and conduction losses at your operating frequency to size the heatsink. The D2Pak package offers a low thermal resistance path when soldered to adequate copper area.
Drop-in alternatives for IGB10N60TATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGB10N60TATMA1 (same form factor and footprint) β differing in Maximum Power Dissipation (Ptot), Package, Technology.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IGB10N60T
β Drop-Inπ Reference alternative (not in catalog)
NGTB10N60FG
β Drop-Inπ Reference alternative (not in catalog)
STGB10NC60HD
β Drop-Inπ Reference alternative (not in catalog)
IRGB4062DPbF
β Drop-Inπ Reference alternative (not in catalog)
IKD15N60RFATMA1
β Drop-Inβ In Stock
$1.35 / Unit
View Datasheet βIGB10N60TATMA1 Maximum Ratings & Electrical Characteristics
| Collector-Emitter Voltage (Vces) | 600 V |
| Continuous Collector Current (IC) at TC=25C | 20 A |
| Maximum Power Dissipation (Ptot) | 110 W |
| Technology | TRENCHSTOP IGBT3 with Fieldstop layer |
| Package | PG-TO263-3-2 (D2Pak, TO-263AB) |
| Mounting Type | Surface Mount |
| Configuration | Single discrete IGBT |
| Operating Temperature Range | -40C to +175C |
| Storage Temperature Range | -55C to +175C |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Pin Count | 3 (Gate, Collector, Emitter) |
IGB10N60TATMA1 Pin Configuration
| Pin 1 | Gate (G) β Gate control input - driven by isolated gate driver, typically 15V on, 0V or negative off |
| Pin 2 | Collector (C) / Tab β Main power terminal - collector also bonded to metal tab on back of package for heatsinking |
| Pin 3 | Emitter (E) β Main power return terminal - emitter also serves as gate drive return |
Forward Bias Safe Operating Area
Typical Applications
IGB10N60TATMA1 is suitable for 6 applications: Uninterruptible Power Supplies (UPS), Solar Microinverters, Induction Cooking Appliances, Industrial Motor Drives, Switch-Mode Power Supplies (SMPS), Electric Vehicle Charging Stations.
Uninterruptible Power Supplies (UPS)
The IGB10N60TATMA1 is well suited for 1-3 kVA UPS inverter bridges operating from rectified 400 V DC bus rails. Its 600 V collector-emitter breakdown provides 33% margin above the peak rectified 380 V mains voltage, while the 20 A continuous collector current supports 2-3 kW output stages. The TRENCHSTOP3 cell geometry delivers low VCE(sat) for reduced conduction loss at 50/60 Hz line-frequency switching, and the short-circuit ruggedness ensures reliable commutation of inductive transformer leakage. Place the device on a 2 oz copper pour of at least 25 cm squared to keep junction temperature below 125C at full load.
Recommended
Solar Microinverters
For solar microinverters and single-phase string inverters, the IGB10N60TATMA1's TRENCHSTOP3 technology minimizes switching loss at the 16-20 kHz operating frequency typical of residential solar topologies. The 600 V rating safely blocks the rectified 380-400 V DC bus from rooftop PV arrays, and the 110 W power dissipation rating supports 2-3 kW inverter power levels when properly heatsinked. The low VCE(sat) of TRENCHSTOP3 improves CEC-weighted efficiency by 0.5-1.0% versus older NPT IGBTs, directly translating to higher energy harvest over the inverter lifetime.
Recommended
Induction Cooking Appliances
The IGB10N60TATMA1 is widely deployed in 1.5-3 kW induction cooktop resonant inverter topologies (quasi-resonant ZVS or ZCS half-bridge). Its 20 A continuous rating handles the resonant current pulses in the LC tank while the 600 V breakdown easily supports rectified 230 V or 380 V mains input. TRENCHSTOP3 technology achieves lower switching loss per cycle than planar IGBT2 devices, enabling 30-40 kHz switching frequencies that reduce acoustic noise and inductor size. The D2Pak surface-mount package allows automated SMT assembly for high-volume consumer appliance manufacturing.
Recommended
Industrial Motor Drives
For variable-frequency drives (VFD) and servo amplifiers below 5 kW, the IGB10N60TATMA1 forms the inverter output stage switching the 400 V three-phase motor windings. The 600 V breakdown margin above the 540 V DC bus peak (rectified 380 V three-phase mains) prevents avalanche failures during regeneration events. Its wide safe operating area and short-circuit withstand time (typically 5-10 microseconds) protect against shoot-through faults in the bridge. Operating at 4-16 kHz with space-vector PWM, the part delivers robust performance for industrial automation and HVAC compressor drives.
Recommended
Switch-Mode Power Supplies (SMPS)
In hard-switched full-bridge or two-switch-forward SMPS topologies at 1-3 kW output power, the IGB10N60TATMA1 replaces MOSFETs when higher current density and lower conduction loss are required. Its 600 V rating suits 230 V rectified mains input (peak 325 V plus margin), and the 20 A collector current supports 3 kW output at modest duty cycles. The 110 W dissipation rating enables continuous conduction-mode operation at 50-100 kHz with proper thermal management, making it a cost-effective choice for industrial welding power sources and high-power battery chargers.
Recommended
Electric Vehicle Charging Stations
Level 1 and Level 2 EV charging stations (3.3-22 kW) use the IGB10N60TATMA1 in the PFC rectifier stage or DC-DC converter bridge operating from rectified 230/380 V AC. Its 600 V V(BR)CES rating provides comfortable margin for the 540 V DC link, and the 20 A continuous current supports 3.3-7 kW power levels with paralleled devices scaling to 22 kW. The low VCE(sat) of TRENCHSTOP3 technology improves charging efficiency by 0.3-0.8%, reducing thermal stress on station enclosures and extending component lifetime in continuous-duty service.
Recommended
Recommended Products Summary
Engineering reference data for IGB10N60TATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGB10N60T | NGTB10N60FG | STGB10NC60HD |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics |
| Package | PG-TO263-3-2 (D2Pak) | PG-TO263-3-2 (D2Pak) - same | TO-263-3 (D2Pak) - same footprint | D2Pak (TO-263) - same footprint |
| Collector-Emitter Voltage V(BR)CES | 600 V | 600 V | 600 V | 600 V |
| Continuous Collector Current (TC=25C) | 20 A | 20 A | 10 A (-50%) | 10 A (-50%) |
| Technology | TRENCHSTOP IGBT3 Fieldstop | TRENCHSTOP IGBT3 Fieldstop (same) | Fieldstop IGBT | PowerMESH IGBT |
| Co-packaged Diode | No (discrete IGBT only) | No | Yes (co-packaged) | Yes (co-packaged) |
Key Differentiators
- TRENCHSTOP3 technology delivers lower switching loss (vs NGTB10N60FG (onsemi))
- Higher continuous collector current rating (vs STGB10NC60HD (STMicroelectronics))
- Discrete IGBT without co-packaged diode (vs STGB10NC60HD)
- Surface-mount D2Pak enables automated SMT assembly (vs Through-hole TO-220 IGBTs)
Design Notes
The D2Pak package relies on the collector tab for heatsinking - thermal resistance RthJC is typically 0.8-1.0 C/W and RthJA depends entirely on PCB copper area. For continuous operation at 100 W dissipation, mount on at least 25 cm squared of 2 oz copper on a single-layer board. Estimated: at 50 W dissipation and 25 cm squared copper, RthJA is approximately 10 C/W, giving a junction rise of 500C above 25C ambient - well above the 150C max. Either increase copper area to 100 cm squared (RthJA ~3-5 C/W) or add forced-air cooling.
Keep the gate drive loop (gate-emitter-resistor-driver-ground) as short and tight as possible, ideally with the gate drive components within 1 cm of the gate pin. The collector tab on the back of the D2Pak is electrically hot, so ensure clearance to ground planes and signal traces. Use a kelvin emitter connection by routing a separate emitter trace from pin 3 to the gate driver ground, avoiding shared power emitter inductance that causes gate voltage ringing during switching.
Do not exceed V(BR)CES = 600 V under any transient condition - inductive load commutation can generate voltage spikes 1.5-2x the DC bus voltage. Always include a snubber or use a gate driver with DESAT protection and active Miller clamping. The TRENCHSTOP3 technology has lower short-circuit withstand time than older NPT IGBTs (typically 5 microseconds versus 10 microseconds), so faster DESAT detection (1-2 microseconds response time) is recommended for fault protection.
Follow the Infineon recommended PCB footprint for PG-TO263-3-2, which uses 1.7 mm x 2.4 mm pads for gate/emitter (pins 1,3) and a large thermal pad for the collector (tab). Stencil aperture should be 1:1 to pad size for the signal pins and reduced to 50-70% coverage on the thermal pad to prevent solder voiding. Reflow peak temperature should not exceed 260C per JEDEC J-STD-020, and MSL1 rating means no dry-pack baking is required before assembly.
Compliance Information
RoHS compliant per Infineon product page. MSL1 rated - no dry pack required. Not qualified to AEC-Q100 (industrial/consumer grade IGBT).
