W634GU6RB-11TR - 4Gb DDR3L SDRAM 933MHz | Winbond
MPN: W634GU6RB-11TR β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $45.4 | $45.40 |
| 10 | $42 | $420.00 |
| 100 | $38.5 | $3,850.00 |
| 500 | $35 | $17,500.00 |
| 1,000 | $32 | $32,000.00 |
Drop-in alternatives for W634GU6RB-11TR β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet βW634GU6RB-11TR Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) |
| Clock Frequency | 933 MHz |
| Data Rate | 1866 MT/s |
| Access Time | 20 ns |
| Supply Voltage | 1.35V (1.5V compatible) |
| Interface | Parallel |
| Package | 96-VFBGA (7.5x13 mm) |
| Operating Temperature | -40Β°C to +95Β°C |
| CAS Latency | 13 |
| Organization | 256M x 16 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Halogen Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| Dynamic ODT | Yes |
W634GU6RB-11TR Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data input/output 2 |
| Pin A6 | DQ3 β Data input/output 3 |
| Pin A7 | VDDQ β I/O power supply |
| Pin A8 | DQ4 β Data input/output 4 |
| Pin A9 | DQ5 β Data input/output 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data input/output 6 |
| Pin A12 | DQ7 β Data input/output 7 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ8 β Data input/output 8 |
| Pin B3 | DQ9 β Data input/output 9 |
| Pin B4 | VDD β Power supply |
| Pin B5 | DQ10 β Data input/output 10 |
| Pin B6 | DQ11 β Data input/output 11 |
| Pin B7 | VSS β Ground |
| Pin B8 | DQ12 β Data input/output 12 |
| Pin B9 | DQ13 β Data input/output 13 |
| Pin B10 | VDDQ β I/O power supply |
| Pin B11 | DQ14 β Data input/output 14 |
| Pin B12 | DQ15 β Data input/output 15 |
| Pin C1 | VDDQ β I/O power supply |
| Pin C2 | VSS β Ground |
| Pin C3 | VDD β Power supply |
| Pin C4 | VSS β Ground |
| Pin C5 | VDDQ β I/O power supply |
| Pin C6 | VSS β Ground |
| Pin C7 | VDD β Power supply |
| Pin C8 | VSS β Ground |
| Pin C9 | VDDQ β I/O power supply |
| Pin C10 | VSS β Ground |
| Pin C11 | VDD β Power supply |
| Pin C12 | VSS β Ground |
| Pin D1 | A0 β Address input 0 |
| Pin D2 | A1 β Address input 1 |
| Pin D3 | A2 β Address input 2 |
| Pin D4 | A3 β Address input 3 |
| Pin D5 | A4 β Address input 4 |
| Pin D6 | A5 β Address input 5 |
| Pin D7 | A6 β Address input 6 |
| Pin D8 | A7 β Address input 7 |
| Pin D9 | A8 β Address input 8 |
| Pin D10 | A9 β Address input 9 |
| Pin D11 | A10/AP β Address input 10 / Auto-precharge |
| Pin D12 | A11 β Address input 11 |
| Pin E1 | A12 β Address input 12 |
| Pin E2 | A13 β Address input 13 |
| Pin E3 | A14 β Address input 14 |
| Pin E4 | A15 β Address input 15 |
| Pin E5 | BA0 β Bank address 0 |
| Pin E6 | BA1 β Bank address 1 |
| Pin E7 | BA2 β Bank address 2 |
| Pin E8 | RAS# β Row address strobe |
| Pin E9 | CAS# β Column address strobe |
| Pin E10 | WE# β Write enable |
| Pin E11 | CS# β Chip select |
| Pin E12 | CKE β Clock enable |
| Pin F1 | ODT β On-die termination |
| Pin F2 | CK β Clock (positive) |
| Pin F3 | CK# β Clock (negative) |
| Pin F4 | RESET# β Reset |
| Pin F5 | VDD β Power supply |
| Pin F6 | VSS β Ground |
| Pin F7 | VDDQ β I/O power supply |
| Pin F8 | VSS β Ground |
| Pin F9 | VDD β Power supply |
| Pin F10 | VSS β Ground |
| Pin F11 | VDDQ β I/O power supply |
| Pin F12 | VSS β Ground |
| Pin G1 | DM0 β Data mask 0 |
| Pin G2 | DM1 β Data mask 1 |
| Pin G3 | VSS β Ground |
| Pin G4 | VDD β Power supply |
| Pin G5 | VSS β Ground |
| Pin G6 | VDDQ β I/O power supply |
| Pin G7 | VSS β Ground |
| Pin G8 | VDD β Power supply |
| Pin G9 | VSS β Ground |
| Pin G10 | VDDQ β I/O power supply |
| Pin G11 | VSS β Ground |
| Pin G12 | VDD β Power supply |
| Pin H1 | DQS0 β Data strobe 0 (positive) |
| Pin H2 | DQS0# β Data strobe 0 (negative) |
| Pin H3 | DQS1 β Data strobe 1 (positive) |
| Pin H4 | DQS1# β Data strobe 1 (negative) |
| Pin H5 | VDDQ β I/O power supply |
| Pin H6 | VSS β Ground |
| Pin H7 | VDD β Power supply |
| Pin H8 | VSS β Ground |
| Pin H9 | VDDQ β I/O power supply |
| Pin H10 | VSS β Ground |
| Pin H11 | VDD β Power supply |
| Pin H12 | VSS β Ground |
| Pin J1 | VSS β Ground |
| Pin J2 | VDD β Power supply |
| Pin J3 | VSS β Ground |
| Pin J4 | VDDQ β I/O power supply |
| Pin J5 | VSS β Ground |
| Pin J6 | VDD β Power supply |
| Pin J7 | VSS β Ground |
| Pin J8 | VDDQ β I/O power supply |
| Pin J9 | VSS β Ground |
| Pin J10 | VDD β Power supply |
| Pin J11 | VSS β Ground |
| Pin J12 | VDDQ β I/O power supply |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
W634GU6RB-11TR is suitable for 6 applications: Embedded Computing, Networking Equipment, Industrial Automation, Consumer Electronics, Automotive Infotainment, Data Center and Cloud Computing.
Embedded Computing
The W634GU6RB-11TR provides 4Gb DDR3L memory in a compact 96-ball VFBGA, ideal for embedded processors and SoCs. Its 1.35V operation reduces power consumption, extending battery life in portable devices. The 1866 MT/s data rate supports high-bandwidth tasks like real-time data processing and multitasking. With a -40Β°C to +95Β°C range, it suits industrial embedded systems. The low voltage and high density make it a preferred choice for space-constrained designs.
Recommended
Networking Equipment
In routers, switches, and network appliances, the W634GU6RB-11TR offers high bandwidth and low latency for packet buffering and forwarding. Its 1866 MT/s data rate ensures fast data throughput, while the 1.35V supply reduces heat generation in dense networking hardware. The 96-ball VFBGA package allows for compact PCB layouts, enabling high port density. The device's auto self-refresh and dynamic ODT features improve signal integrity in high-speed designs, making it suitable for enterprise networking equipment.
Recommended
Industrial Automation
The W634GU6RB-11TR operates reliably in industrial environments with its -40Β°C to +95Β°C temperature range. It provides the memory capacity needed for PLCs, robotics controllers, and HMI systems. The low voltage (1.35V) reduces power dissipation, which is critical in sealed enclosures. The 1866 MT/s data rate supports real-time control loops and data logging. Its robust design and long lifecycle make it suitable for industrial applications requiring high reliability.
Recommended
Consumer Electronics
For smart TVs, set-top boxes, and gaming consoles, the W634GU6RB-11TR delivers high memory bandwidth for smooth multimedia playback and multitasking. Its 1.35V operation helps meet energy efficiency standards. The compact 96-ball VFBGA package enables slim device designs. The 1866 MT/s data rate supports 4K video processing and responsive user interfaces. The device's low power consumption extends battery life in portable consumer devices.
Recommended
Automotive Infotainment
The W634GU6RB-11TR is suitable for automotive infotainment systems, providing high memory bandwidth for navigation, audio, and video applications. Its 1.35V operation reduces power consumption, important for vehicle electrical systems. The -40Β°C to +95Β°C range covers automotive temperature requirements. The 96-ball VFBGA package withstands vibration and thermal cycling. However, for AEC-Q100 compliance, consider automotive-grade alternatives like IS43TR16256AL-125KBLI-TR.
Recommended
Data Center and Cloud Computing
In servers and storage systems, the W634GU6RB-11TR provides high-density memory for virtualization and cloud workloads. Its 1866 MT/s data rate ensures fast data access, while the 1.35V supply reduces power consumption in large-scale deployments. The 96-ball VFBGA package allows for high memory density on server boards. The device's reliability and long lifecycle make it suitable for 24/7 operation in data centers.
Recommended
Recommended Products Summary
Engineering reference data for W634GU6RB-11TR β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | W634GU6RB-11 | IS43TR16256A-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYH9 | H5TC4G63CFR-H9A |
|---|---|---|---|---|---|---|
| Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Brand | Winbond Electronics | Winbond Electronics | ISSI | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Clock Frequency | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | -40Β°C to +95Β°C | -40Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C | 0Β°C to +95Β°C |
| Automotive Grade | No | No | No | No | No | No |
Key Differentiators
- Wide temperature range (-40Β°C to +95Β°C) (vs IS43TR16256A-125KBL)
- Low voltage operation (1.35V) (vs MT41K256M16HA-125)
- Halogen-free and RoHS compliant (vs K4B4G1646D-BYH9)
Design Notes
For high-speed DDR3L routing, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Use a solid ground plane and minimize vias to reduce signal reflections. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the Winbond datasheet for the 96-ball VFBGA package.
The W634GU6RB-11TR operates at 1.35V, which is lower than standard DDR3's 1.5V. Ensure the power supply can provide adequate current during burst operations. Use a dedicated voltage regulator with low output noise and fast transient response. Consider using a 1.35V supply with 1.5V compatibility for flexibility.
The 96-ball VFBGA package has a thermal resistance of approximately 20Β°C/W (typical). For high ambient temperature applications, ensure adequate airflow or a thermal pad to dissipate heat. The operating temperature range is -40Β°C to +95Β°C, so verify the junction temperature stays within limits under worst-case conditions.
Compliance Information
Winbond states all Flash products are RoHS compliant and halogen-free; this likely applies to DDR SDRAM as well. AEC-Q100 not mentioned in data.
