MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPN: MPQ2222-TIN-LEAD β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.98 | $0.98 |
| 10 | $0.88 | $8.80 |
| 100 | $0.72 | $72.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.54 | $540.00 |
MPQ2222-TIN-LEAD Overview
A transistor array such as this integrates multiple discrete BJTs on a single die within one package. In the component hierarchy, it belongs to: quad transistor array -> BJT transistor array -> bipolar transistor -> discrete semiconductor. Arrays reduce board area, part count, and placement cost compared with four individual 2N2222-type transistors, while guaranteeing matched electrical characteristics among the four elements.
Key features include 60V VCBO collector-base breakdown, 5.0V VEBO emitter-base breakdown, four fully independent transistors for flexible circuit topologies, and a 200MHz ft that suits both amplifier and fast-switching duties. The through-hole DIP package simplifies prototyping, breadboarding, and rework on legacy industrial boards.
Architecturally, the MPQ2222 is Central Semiconductor's drop-in continuation of the industry-standard Motorola MPQ2222 quad 2N2222-equivalent, preserving the classic pin configuration (collector Q1 on pin 1 through collector Q4 on pin 14) so existing PCB footprints remain valid. Devices are manufactured with EMC GREEN halogen-free molding compound and offered in both tin/lead and lead-free (PB FREE) plating options to support legacy-repair and RoHS-constrained designs respectively.
Typical applications include general-purpose amplifier stages, low-side switching arrays, LED and relay drivers, pulse generators, and repair/maintenance of legacy industrial and test equipment that originally specified the Motorola MPQ2222.
Design consideration: at the 500mA maximum collector current, ensure per-device power dissipation stays within the 650mW rating and provide adequate copper-free airflow for the DIP package.
This page synthesizes verified distributor data, the manufacturer datasheet pinout, and drop-in alternative guidance not consolidated in the manufacturer datasheet.
Drop-in alternatives for MPQ2222-TIN-LEAD β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with MPQ2222-TIN-LEAD (same form factor and footprint) β differing in Collector-Base Voltage (VCBO), Emitter-Base Voltage (VEBO), Package, Transistor Type.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MPQ2222A-TIN-LEAD
β Drop-Inπ Reference alternative (not in catalog)
MPQ2222
β Drop-Inβ In Stock
$0.39 / Unit
View Datasheet βMPQ2222A
β Drop-Inβ In Stock
$0.41 / Unit
View Datasheet βMPQ2222-PB-FREE
β Drop-Inπ Reference alternative (not in catalog)
MPQ2222-TIN-LEAD Maximum Ratings & Electrical Characteristics
| Transistor Configuration | Quad (4 independent NPN) |
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5.0 V |
| Collector Current (IC) | 500 mA |
| Power Dissipation | 650 mW |
| Transition Frequency (fT) | 200 MHz |
| Package | TO-116, 14-pin DIP, Through Hole |
| Mounting Type | Through Hole |
| Plating Finish | Tin/Lead (order suffix TIN/LEAD) |
| Molding Compound | EMC GREEN, halogen-free |
| Application | General purpose amplifier and switching |
| Equivalent Base Type | Quad 2N2222-type |
| RoHS Status | Non-compliant (lead-containing tin/lead plating variant) |
MPQ2222-TIN-LEAD Pin Configuration
| Pin 1 | Collector Q1 β Collector of transistor 1 |
| Pin 2 | Base Q1 β Base of transistor 1 |
| Pin 3 | Emitter Q1 β Emitter of transistor 1 |
| Pin 4 | NC β Not connected (per datasheet) |
| Pin 5 | Emitter Q2 β Emitter of transistor 2 |
| Pin 6 | Base Q2 β Base of transistor 2 |
| Pin 7 | Collector Q2 β Collector of transistor 2 |
| Pin 8 | Collector Q3 β Collector of transistor 3 |
| Pin 9 | Base Q3 β Base of transistor 3 |
| Pin 10 | Emitter Q3 β Emitter of transistor 3 |
| Pin 11 | NC β Not connected (per datasheet) |
| Pin 12 | Emitter Q4 β Emitter of transistor 4 |
| Pin 13 | Base Q4 β Base of transistor 4 |
| Pin 14 | Collector Q4 β Collector of transistor 4 |
Typical Applications
MPQ2222-TIN-LEAD is suitable for 6 applications: General Purpose Amplifier Stages, Low-Side Switching Arrays, Legacy Industrial Equipment Repair, Pulse and Waveform Generator Circuits, Test and Measurement Instrumentation, LED Driver and Indicator Arrays.
General Purpose Amplifier Stages
The four independent NPN transistors in the MPQ2222-TIN-LEAD each deliver 2N2222-class performance with 200MHz transition frequency and 500mA collector capability, making the array well suited to multi-stage small-signal amplifiers. Multiple stages (input, driver, output buffer) can be built from a single 14-pin DIP, guaranteeing die-level parameter tracking that discrete transistor sets cannot match. In a common-emitter stage biased at a few milliamperes, the 200MHz ft provides ample bandwidth margin, while the 40V VCEO supports higher supply rails than many small-signal arrays.
Recommended
Low-Side Switching Arrays
The MPQ2222-TIN-LEAD drives loads such as relays, indicator LEDs, and small solenoids with each transistor rated 500mA collector current and 40V VCEO. Four independent low-side switches in one package suit parallel actuator control in industrial and test equipment, reducing board area and placement cost versus four discrete TO-92 parts. Estimated: switching 100mA at VCE(sat) near 0.3V dissipates only about 30mW per device, far inside the 650mW rating, allowing simultaneous full-array operation with conservative thermal margin in the through-hole DIP package.
Recommended
Legacy Industrial Equipment Repair
Central Semiconductor's MPQ2222 family directly continues the original Motorola MPQ2222 quad NPN array in the identical TO-116 14-pin DIP with unchanged pin configuration, which makes the TIN/LEAD variant the preferred sourcing path for maintaining equipment designed decades ago. Tin/lead plating matches legacy Sn/Pb solder processes and avoids tin-whisker concerns in long-life industrial and military hardware. Because the footprint and ratings (40V, 500mA, 200MHz, 650mW) are preserved, repair technicians can replace failed arrays with no PCB rework or requalification.
Recommended
Pulse and Waveform Generator Circuits
The 200MHz transition frequency of the MPQ2222-TIN-LEAD supports fast edge generation in pulse circuits, astable multivibrators, and timing chains. Four matched transistors in one package allow symmetric multivibrator designs where parameter tracking between halves improves duty-cycle accuracy. Per the Central Semiconductor datasheet, the devices are specified for general purpose amplifier and switching applications; the through-hole DIP package also eases breadboard prototyping of pulse circuitry. Estimated: with modest base overdrive, edge rates in the tens-of-nanoseconds range are practical within the 500mA rating.
Recommended
Test and Measurement Instrumentation
Bench instruments and ATE fixtures frequently need several small NPN switches or buffers, and the MPQ2222-TIN-LEAD supplies four in a single socketed DIP, which simplifies field service in instrumentation. The 40V VCEO accommodates 24V-domain signals with margin, and 500mA per channel covers probe or lamp loads. Die-level matching among the four transistors benefits differential or complementary signal-conditioning stages. Central Semiconductor maintains this part as active production, ensuring continued availability for instrument OEMs supporting long-lifecycle product lines.
Recommended
LED Driver and Indicator Arrays
Each MPQ2222-TIN-LEAD transistor comfortably drives series LED strings: estimated with a 20mA LED at VCE(sat) about 0.2V, per-channel dissipation is roughly 4mW, so all four channels can operate continuously with negligible thermal impact in the 650mW-rated package. The 14-pin DIP suits front-panel indicator boards and socketed status-driver cards in industrial control panels. Base resistors sized for forced beta of 10 provide fully saturated switching and consistent brightness across channels, taking advantage of the array's die-level parameter tracking.
Recommended
Recommended Products Summary
Engineering reference data for MPQ2222-TIN-LEAD β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MPQ2222A-TIN-LEAD | MPQ2222 | MPQ2222-PB-FREE |
|---|---|---|---|---|
| Package | TO-116, 14-pin DIP | TO-116, 14-pin DIP - same | TO-116, 14-pin DIP - same | TO-116, 14-pin DIP - same |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Transistor Configuration | Quad NPN (4 independent) | Quad NPN (4 independent) | Quad NPN (4 independent) | Quad NPN (4 independent) |
| VCEO | 40 V | 40 V | 40 V | 40 V |
| Collector Current | 500 mA | 500 mA | 500 mA | 500 mA |
| Transition Frequency | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
| Power Dissipation | 650 mW | 650 mW | 650 mW | 650 mW |
| Plating / RoHS | Tin/Lead, non-RoHS | Tin/Lead, non-RoHS | Either, by availability | Lead-free, RoHS compliant |
| hFE Grade | Standard | A grade (higher gain) | Standard | Standard |
Key Differentiators
- Tin/lead plating for legacy Sn/Pb processes (vs MPQ2222-PB-FREE)
- Four transistors in one 14-pin DIP (vs 2N2222A (discrete TO-92))
- Direct continuation of Motorola MPQ2222 (vs MPQ2222A-TIN-LEAD)
Design Notes
The MPQ2222 uses the original Motorola TO-116 14-pin DIP pin configuration: collector/base/emitter groupings per the Central Semiconductor datasheet (C-Q1 pin 1, B-Q1 pin 2, E-Q1 pin 3, NC pin 4, E-Q2 pin 5, B-Q2 pin 6, C-Q2 pin 7, C-Q3 pin 8, B-Q3 pin 9, E-Q3 pin 10, NC pin 11, E-Q4 pin 12, B-Q4 pin 13, C-Q4 pin 14). Note the emitter/base/collector order is NOT uniform across the four transistors - do not assume a mirrored layout; always route against the datasheet table.
Per-device dissipation is 650mW. Estimated: driving 500mA at VCE(sat) near 0.5V yields about 250mW per transistor; running all four near this level simultaneously is acceptable, but at 40V-class VCE with sustained current the limit is reached quickly. For through-hole DIP parts without a heatsink tab, keep continuous per-channel currents below roughly 150-200mA when multiple channels conduct together, and verify junction temperature against your ambient.
The TIN/LEAD suffix is a deliberate non-RoHS tin/lead plating option - do not specify it in new RoHS-restricted products; order MPQ2222 PB FREE instead. Also, the datasheet states that ordering with no plating suffix allows shipment of either tin/lead or lead-free product depending on availability, which can create compliance audit problems for BOMs. Always order the explicit TIN/LEAD or PB FREE suffix to lock the finish.
Compliance Information
TIN/LEAD suffix denotes tin/lead plating - intentionally lead-containing per Central Semiconductor datasheet. EMC GREEN molding compound is halogen-free. Lead-free variant available with PB FREE suffix.
