MRF9135LR5 - 25W 880MHz LDMOS RF Power MOSFET | NXP
MPN: MRF9135LR5 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $92.31 | $92.31 |
| 10 | $85.4 | $854.00 |
| 50 | $78.1 | $3,905.00 |
| 100 | $72.5 | $7,250.00 |
| 500 | $65.2 | $32,600.00 |
MRF9135LR5 Overview
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a type of RF power MOSFET that uses a laterally diffused drain region under the gate, combining the high input impedance and ease of biasing of a MOSFET with the high breakdown voltage and excellent RF ruggedness required for RF power amplification. Within the broader taxonomy it sits in: RF power transistor -> RF power MOSFET -> RF power semiconductor -> discrete semiconductor. LDMOS is the dominant technology at frequencies below ~3 GHz in cellular base stations and UHF/900 MHz industrial transmitters, displacing older bipolar and VDMOS parts on the basis of higher gain, better efficiency, and superior linearity.
Key features include an integrated ESD protection structure, a thermally robust NI-780H-2L flange package suited to bolted heatsink mounting, and a single-ended common-source configuration that simplifies PCB layout at UHF. The part is internally matched only at the input; the output requires external matching to 50 ohm. Drain efficiency at rated power is typically 55-60% in class-AB service, and the device is rated for CW or pulsed operation within its SOA envelope.
Typical applications include 880 MHz cellular base-station driver stages (AMPS, TDMA, GSM base-station PA blocks), UHF digital and analog radio transmitters, RFID reader power stages, and industrial/scientific (ISM) band transmitters in the 902-928 MHz band. The 65 V breakdown rating gives meaningful headroom over the 26 V operating rail for inductive load mismatch tolerance.
When designing with this device, ensure the heatsink thermal resistance keeps the junction below 200C at the worst-case continuous-CW load. Output matching must be optimized for the actual frequency band of operation; do not assume broadband performance from a single match.
This page synthesizes drop-in alternatives, design notes, and commercial availability information not consolidated on a single manufacturer or distributor page.
Drop-in alternatives for MRF9135LR5 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MRF9135LSR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF9130LSR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF9120LSR5
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
MRF174
✅ Drop-In ⚠️ Specs Unverified📋 Reference alternative (not in catalog)
BLF888
✅ Drop-In📋 Reference alternative (not in catalog)
PTFB091507EH
✅ Drop-In📋 Reference alternative (not in catalog)
MRF9135LR5 Maximum Ratings & Electrical Characteristics
| Manufacturer | NXP Semiconductors |
| Original Manufacturer | Freescale Semiconductor (now NXP) |
| Transistor Type | LDMOS, N-Channel, RF Power |
| Drain-Source Voltage (VDS) | 65 V |
| Operating Drain Voltage (VDD) | 26 V |
| Drain Current (ID) at Rated Power | 1.1 A |
| Operating Frequency | 880 MHz |
| Output Power (POUT) | 25 W (CW or pulsed) |
| Power Gain (Gps) | 17.8 dB at 880 MHz |
| Efficiency | 55-60% typical in class-AB |
| Test Voltage (VDD) | 26 V |
| Package / Case | NI-780H-2L |
| Mounting Type | Chassis/Screw Mount (flanged ceramic) |
| Configuration | Single-ended, common-source |
MRF9135LR5 Pin Configuration
| Pin 1 | DRAIN — RF output / drain (connected internally to the case flange) |
| Pin 2 | GATE — RF input / gate bias |
| Pin 3 | SOURCE — Source / ground (also tied to the case flange) |
DC Safe Operating Area (MRF9135LR5)
Typical Applications
MRF9135LR5 is suitable for 6 applications: 880 MHz Cellular Base Station Driver, UHF Mobile Radio Transmitter, ISM-Band (902-928 MHz) Transmitter, Two-Way Radio Repeater Amplifier, RF Power Amplifier Module (Drop-in PA Block), Avionics / Surveillance UHF Transmitter.
880 MHz Cellular Base Station Driver
The MRF9135LR5 is well-suited as a driver stage for 880 MHz cellular base-station power amplifiers (AMPS/TDMA-class systems). Its 25 W POUT and 17.8 dB gain at 880 MHz let it drive a higher-power final LDMOS stage with adequate margin, while its 65 V drain breakdown gives headroom for VSWR mismatch events on the feeder. The NI-780H-2L flanged package bolts directly to a chassis heatsink, enabling continuous CW operation without active cooling at full duty cycle. Compared to a discrete bipolar transistor, the LDMOS architecture simplifies bias circuitry and improves linearity for digital modulation formats such as TDMA and early GSM.
Recommended
UHF Mobile Radio Transmitter
In UHF analog and digital mobile-radio transmitters (typical 800-900 MHz commercial bands), the MRF9135LR5 acts as the RF final or driver amplifier. Its 26 V operating rail and 1.1 A drain current are well-matched to standard 24-28 V vehicle or base-station supplies, eliminating the need for an intermediate boost converter. The 17.8 dB gain means a small-signal driver upstream (such as a -10 dBm synthesizer) can saturate the output without an additional MMIC gain block, reducing BOM cost and board area. The 55-60% class-AB efficiency keeps thermal dissipation manageable for a fan-less mobile chassis.
Recommended
ISM-Band (902-928 MHz) Transmitter
The MRF9135LR5 fits 902-928 MHz industrial/scientific/medical band transmitters such as RFID reader power stages, remote-metering links, and SCADA RTU radio modules. Its 880 MHz center of operation is close enough that minor output-matching retuning covers the 28 MHz ISM band cleanly. The 25 W power level is sufficient for non-licensed high-power RFID readers and fixed-link telemetry transmitters where regulatory EIRP is the binding constraint. The flanged ceramic package withstands vibration and thermal cycling typical of industrial enclosures.
Recommended
Two-Way Radio Repeater Amplifier
The MRF9135LR5 serves as a compact line amplifier in two-way radio repeaters covering the 800/900 MHz public-safety and commercial bands. Its 25 W output and 17.8 dB gain let a low-power exciter drive a repeater's antenna feed with minimal external gain stages. The 65 V VDS breakdown protects against antenna disconnect and lightning-induced reflected power events common at repeater sites. The NI-780H-2L package can be mounted to the repeater's existing aluminum chassis for passive cooling at continuous duty.
Recommended
RF Power Amplifier Module (Drop-in PA Block)
Designers building a broadband or multi-band PA module can use the MRF9135LR5 as a known-good 25 W, 880 MHz gain block. Its internally input-matched (but externally output-matched) topology simplifies module integration by removing the need for an input-matching network on the small-signal side. The standard NI-780H-2L footprint lets the module accept equivalent Ampleon or Infineon parts as alternates without reworking the mechanical interface. This makes the MRF9135LR5 a flexible building block for modular RF power subsystems.
Recommended
Avionics / Surveillance UHF Transmitter
Although the MRF9135LR5 is not formally qualified to avionics standards, its mature silicon and robust flanged package suit special-purpose UHF surveillance and telemetry transmitters at 880 MHz. The 25 W power level covers many line-of-sight telemetry links, while the LDMOS ruggedness tolerates antenna mismatch without device failure. Design teams should perform their own derating and qualification per the target application's environmental and regulatory requirements. The part's long-term NXP/Freescale supply chain makes it attractive for programs requiring multi-year continuity of supply.
Recommended
Recommended Products Summary
Engineering reference data for MRF9135LR5 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MRF9135LSR5 | MRF9130LSR5 | MRF9120LSR5 | MRF174 | BLF888 | PTFB091507EH |
|---|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | Ampleon | Infineon |
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780 family - same | NI-780 family - same | NI-780 family - same |
| Output Power (POUT) | 25 W | 25 W | ~22 W | ~15 W | ~150 W | ~100 W | 50 W |
| Operating Frequency | 880 MHz | 880 MHz | 880 MHz | 880 MHz | 200 MHz | UHF (860-960 MHz) | 900-930 MHz |
| Power Gain (Gps) | 17.8 dB | 17.8 dB | 17.5 dB | 17 dB | 20 dB | 19 dB | 18.5 dB |
| Drain-Source Voltage (VDS) | 65 V | 65 V | 65 V | 65 V | 65 V | 50 V | 65 V |
| Operating Drain Voltage (VDD) | 26 V | 26 V | 26 V | 26 V | 28 V | 28 V | 28 V |
| Approx. Drain Current at POUT | 1.1 A | 1.1 A | ~1.0 A | ~0.7 A | ~6 A | ~4 A | ~2 A |
Key Differentiators
- Mature 880 MHz-specific gain optimization (vs PTFB091507EH (Infineon))
- Lower power at the same NI-780 footprint for retrofit designs (vs MRF174 (NXP same family))
- Internally input-matched, externally output-matched topology (vs BLF888 (Ampleon))
Design Notes
At 25 W CW output into 50 ohm at 880 MHz with 55% class-AB drain efficiency, roughly 20 W of heat must be removed from the junction. With a typical NI-780H-2L junction-to-flange thermal resistance near 0.6 C/W, the flange-to-ambient heatsink must keep the case below ~50C rise at full CW load to keep Tj under 200C. A bolted aluminum heatsink of at least 100 cm^2 with airflow is the realistic minimum for continuous CW service at 25 W. For pulsed operation the thermal budget is much more forgiving.
Use a low-loss substrate (Rogers RO4003C or similar) for the output matching network. The MRF9135LR5 is internally input-matched only; place the external output-matching stubs directly at the drain lead and minimize trace length between the device and the matching network. Source leads must be grounded with multiple short vias to a continuous ground plane on the bottom layer. A 4-layer PCB with a dedicated ground plane below the matching network is strongly recommended.
Do not exceed 65 V on the drain, even transiently - LDMOS is rugged against RF mismatch but a DC overvoltage event will destroy the die. Ensure the gate bias supply is sequenced to come up after the drain supply is present, or use a clamping circuit, to avoid partially-biased operation. Do not run the part in class-C at 880 MHz without verifying the load network tolerates the harmonic content. Always include a circulator or isolator at the output when driving an antenna to protect against high VSWR.
Compliance Information
RoHS, REACH, lead-free, and halogen-free status not retrieved from the verified web data; confirm against the NXP product declaration for the specific lot date code. Part is not AEC-Q100 (RF power transistor for infrastructure use).
