MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology
MPN: MT41K128M16JT-125:K β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.19 | $12.19 |
| 10 | $11.58 | $115.80 |
| 100 | $10.97 | $1,097.00 |
| 500 | $10.36 | $5,180.00 |
| 1,000 | $9.75 | $9,750.00 |
Drop-in alternatives for MT41K128M16JT-125:K β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT41K128M16JT-125 IT:K
β Drop-Inπ Reference alternative (not in catalog)
MT41K128M16JT-125 AAT:K
β Drop-Inπ Reference alternative (not in catalog)
MT41J128M16JT-125:K
β Drop-Inπ Reference alternative (not in catalog)
MT41K128M16JT-125XIT
β Drop-Inπ Reference alternative (not in catalog)
K4B4G1646E-BYK000
β Drop-Inβ In Stock
$0.5619 / Unit
View Datasheet βMT41K128M16JT-125:K Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Memory Capacity | 2 Gbit |
| Organization | 128M x 16 |
| Interface | Parallel |
| Clock Frequency | 800 MHz (1600 MT/s data rate) |
| Access Time (Clock Cycle) | 13.75 ns |
| Supply Voltage (VDD) | 1.35 V (1.283 V to 1.45 V) |
| Prefetch Architecture | 8n-bit |
| Package | 96-FBGA (8x14 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature | 0C to +95C |
| Self Refresh | Auto self-refresh |
| Write Leveling | Supported |
| Data Mask | Supported |
| On-Die Termination | Dynamic ODT supported |
| Asynchronous Reset | Supported |
| RoHS Status | Compliant |
MT41K128M16JT-125:K 96-fbga (8x14 mm) Pin Configuration Guide
Complete pinout information for MT41K128M16JT-125:K (96-fbga (8x14 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT41K128M16JT-125:K.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT41K128M16JT-125:K is suitable for 6 applications: FPGA Embedded Memory Subsystems, Industrial HMI and Automation Controllers, Networking and Communication Line Cards, Set-Top Boxes and Consumer Multimedia, Test and Measurement Instrumentation, Medical Diagnostic Equipment.
FPGA Embedded Memory Subsystems
The MT41K128M16JT-125:K is a natural fit for FPGA DDR3L memory interfaces in Xilinx 7-series, Intel/Altera, and Microsemi SoC designs because its 1600 MT/s speed grade matches the upper range of FPGA hard memory controllers, and its x16 organization lets a single chip fill the full controller data width. Write leveling and dynamic ODT support the fly-by address/command topology these controllers require, while the 8n-bit prefetch keeps internal bank operations efficient at 800 MHz. Implemented with a single 2 Gbit device, a design gains 256 MB of working memory without multi-chip width matching; the trade-off is that controller calibration (read gating, DQS leveling) must be re-run when switching speed grades or brands, and the fly-by routing length rules on the PCB must be honored to close timing.
Recommended
Industrial HMI and Automation Controllers
Industrial human-machine interface panels, PLCs, and automation controllers need 128-512 MB of volatile memory for frame buffers, logging, and protocol stacks, and the MT41K128M16JT-125:K provides 2 Gbit per chip in a compact 96-FBGA footprint suited to dense controller boards. Its 1.35V DDR3L rail cuts dynamic power roughly 20% versus 1.5V DDR3, reducing heat inside sealed industrial enclosures, and auto self-refresh preserves data during processor standby between production cycles. The commercial 0C to +95C rating covers most indoor factory environments; for cold warehouses or outdoor cabinets, specify the IT variant rated to -40C. Designers should budget VTT termination power on the address/command fly-by bus and verify the SoC memory controller supports DDR3L timing at the target clock before finalizing the power tree.
Recommended
Networking and Communication Line Cards
Switch, router, and gateway line cards use DDR3L SDRAM for packet buffers, routing tables, and deep-packet-inspection workloads, and the MT41K128M16JT-125:K's 1600 MT/s data rate supplies the bandwidth these platforms demand - roughly 12.8 Gbit/s peak per device at x16. Data mask support enables efficient partial writes during packet buffer management, and dynamic ODT adapts termination as bus loading changes between reads and writes, preserving signal integrity at speed. Because network equipment often runs in environmentally controlled racks, the commercial 0C to +95C grade is typically sufficient, keeping BOM cost below the industrial variant. Multiple chips can be chip-selected on a shared fly-by bus, and the asynchronous reset allows a management controller to recover the memory subsystem without a full board power cycle during fault conditions.
Recommended
Set-Top Boxes and Consumer Multimedia
Set-top box, smart TV, and streaming-media platforms pair an application SoC with DDR3L SDRAM for OS execution and video frame buffers, and the MT41K128M16JT-125:K's 2 Gbit density with 1600 MT/s bandwidth comfortably supports 1080p decode pipelines in the x16 width. The 1.35V rail aligns with the power budgets of consumer electronics where standby regulations apply, and auto self-refresh minimizes DRAM power during sleep states. One 96-FBGA device on a two-layer-capable memory bus reduces PCB layers versus multi-chip arrangements, an important cost lever in consumer hardware. Note that consumer enclosures rarely exceed +70C ambient, giving generous margin to the +95C rating; designs targeting outdoor or automotive-adjacent installations should instead evaluate the AAT automotive variant for its 105C capability.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and arbitrary waveform generators require deep capture memory with sustained streaming bandwidth, and the MT41K128M16JT-125:K delivers 2 Gbit of storage at 1600 MT/s in a footprint that fits tightly packed acquisition boards. Write leveling and per-byte data mask let controller firmware fine-tune timing across the capture pipeline, while the 8n-bit prefetch architecture keeps bank-to-bank turnaround efficient during long sequential writes of sample data. Bench instruments operate in controlled 0C to +50C laboratories, so the commercial grade suffices; the key engineering task is managing VTT rail transients during burst writes, since DRAM termination current steps can inject noise into sensitive analog front ends. Placement of the DRAM away from the analog section, plus solid VTT decoupling, mitigates this coupling in high-resolution instruments.
Recommended
Medical Diagnostic Equipment
Patient monitors, ultrasound engines, and in-vitro diagnostic analyzers use DDR3L SDRAM for image pipelines and data acquisition buffers, and the MT41K128M16JT-125:K suits these platforms with 2 Gbit capacity, 1.35V low-power operation that limits heat near patient-contact electronics, and robust self-refresh for continuous background logging. Ultrasound beamforming in particular benefits from the 1600 MT/s streaming bandwidth when sweeping acquisition data into frame memory. Medical designs typically specify the industrial IT:K variant for its wider -40C to +95C margin under IEC 60601 thermal derating practices, at a modest cost premium over the commercial part. Because medical approvals favor long-lifecycle, single-sourcing strategies, qualifying both the commercial and industrial suffixes from the same Micron die family simplifies component change control over the product's service life.
Recommended
Recommended Products Summary
Engineering reference data for MT41K128M16JT-125:K β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT41K128M16JT-125 IT:K | MT41K128M16JT-125 AAT:K | MT41J128M16JT-125:K | K4B4G1646E-BYK000 |
|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA (8x14) - same | 96-FBGA - same footprint class |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Density | 2 Gbit | 2 Gbit | 2 Gbit | 2 Gbit | 4 Gbit |
| Organization | 128M x 16 | 128M x 16 | 128M x 16 | 128M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.35 V (DDR3L) | 1.5 V (DDR3) | 1.35 V (DDR3L) |
| Data Rate | 1600 MT/s (800 MHz) | 1600 MT/s | 1600 MT/s | 1600 MT/s | [DATA_NEEDED] |
| Operating Temperature | 0C to +95C | -40C to +95C | -40C to +105C (automotive) | 0C to +95C | [DATA_NEEDED] |
| Automotive Grade (AEC-Q100) | No | No | Yes (AAT suffix) | No | No |
Key Differentiators
- Lowest-power option within the pin-compatible family (vs MT41J128M16JT-125:K)
- Widest temperature coverage via same-footprint siblings (vs MT41K128M16JT-125 IT:K)
- Exact 2 Gbit x16 single-chip bus fill (vs K4B4G1646E-BYK000)
Design Notes
Route the DDR3L address/command bus in fly-by topology as required by the JEDEC-style DDR3 controller, with series resistors (typically 22-33 ohm) at the controller and length matching of +/-50 mil across clock, address, and command groups. Data lanes (DQ/DM/DQS) are point-to-point per chip and must be length matched within the lane to +/-10 mil. The dynamic ODT feature of the MT41K128M16JT-125:K helps absorb reflections during read/write turnaround at 1600 MT/s, but it cannot compensate for gross stub mismatches - keep via stubs minimal on the 96-FBGA fanout.
Budget three rails: VDD/VDDQ at 1.35V, and a separate VTT termination rail at VDD/2 = 0.675V capable of sourcing and sinking significant transient current (estimated: on a fully populated fly-by bus, VTT transients can reach several hundred milliamps during read/write bursts). Generate VTT with a dedicated sink-source termination regulator and decouple with bulk plus high-frequency ceramics near each DRAM VTT pin. Reference VTTDL (trainable termination) per the controller's requirements. Do not share the VTT regulator output directly with the reference voltage generation without an RC filter, or write leveling accuracy will degrade.
Verify controller DDR3L support before substituting the 1.35V MT41K128M16JT-125:K into a DDR3 (1.5V) design - the ball-compatible MT41J128M16JT-125:K exists precisely because the supply rails differ. Also confirm refresh configuration: DDR3L requires 1x refresh up to +85C and 2x refresh above that, so thermal design should keep case temperature below +85C to avoid halving effective bandwidth. Finally, when migrating to a cross-brand part such as Samsung's K4B4G1646-series, density changes alter the ball map for address pins - re-verify footprint and re-run controller memory calibration.
Use via-in-pad fanout on the 96-FBGA (0.8 mm pitch) where layer count allows, reserving dog-bone escape for two-signal-layer memory buses. Assign a solid, unbroken ground reference plane adjacent to every memory routing layer to control impedance (target 50 ohm single-ended, 100 ohm differential for DQS pairs). Place the DRAM within 2-3 inches of the controller at 1600 MT/s; longer traces push the interface toward read-gating calibration limits. Micron's DDR3L datasheet package section provides the ball map and recommended land pattern dimensions for the 8x14 mm FBGA.
Compliance Information
RoHS compliant per distributor listings (IC-Components, LCSC); ':K' suffix denotes lead-free package. AEC-Q100 applies only to the AAT automotive variant. REACH and conflict-minerals status should be confirmed via the manufacturer's current compliance certificate.
