MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
部品番号: MT41K64M16TW-107 AUT:J ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.85 | $38.50 |
| 100 | $3.45 | $345.00 |
| 500 | $3.1 | $1,550.00 |
| 1,000 | $2.85 | $2,850.00 |
MT41K64M16TW-107 AUT:J 概要
DDR3L SDRAM (Low-Voltage Double Data Rate 3 Synchronous Dynamic Random Access Memory) is a type of volatile memory IC that stores data dynamically and requires periodic refresh. Within the memory hierarchy, DDR3L sits between legacy DDR2 and DDR4, offering higher bandwidth and lower operating voltage (1.35 V nominal, backward compatible with 1.5 V DDR3 operation) at reduced power consumption. It remains one of the most widely deployed DRAM standards in embedded and industrial systems.
Key features of the MT41K64M16TW-107 include the 1Gbit density in a x16 organization, a 933 MHz clock rate corresponding to DDR3L-1866 speed grade, and the compact 96-ball FBGA footprint that conserves PCB area. The parallel interface supports burst lengths of 8 with on-die termination (ODT) and 8-bit prefetch architecture per the DDR3L protocol.
Technically, the device uses Micron's DRAM core process with a bank architecture supporting concurrent activation, CAS latency programming, and programmable refresh rates. The AUT grade option extends operating temperature capability beyond the commercial range for automotive and harsh-environment applications.
Typical applications include automotive infotainment and ADAS buffer memory, industrial control HMI memory, networking equipment line-card buffering, and embedded processor (FPGA or MPU) main memory where DDR3L controllers are integrated.
A key design consideration is signal integrity: DDR3L fly-by routing, length matching, and ODT calibration are essential at 933 MHz; refer to the manufacturer datasheet for IBIS models and layout guidelines.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
ドロップイン代替品: MT41K64M16TW-107 AUT:J — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: MT41K64M16TW-107 AUT:J （同一形状・フットプリント） — 相違点: Access Time, Package, Data Rate, Supply Voltage, Memory Size.
クイック比較ツール — 並列比較する代替部品を選択:
MT41K64M16TW-107
✅ ドロップイン✓ 在庫あり
$2.95 / 個
データシートを見る →MT41K64M16TW-107:J
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K4B4G1646E-BYK000
✅ ドロップイン✓ 在庫あり
$0.5619 / 個
データシートを見る →K4B1G1646G-BYK0
✅ ドロップイン📋 参考代替品（カタログ未掲載）
NT5CC64M16GP-EK
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K4A4G165WG-BCWE
✅ ドロップイン✓ 在庫あり
$16.9 / 個
データシートを見る →MT41K64M16TW-107 AUT:J 最大定格＆電気的特性
| メモリタイプ | SDRAM - DDR3L |
| メモリサイズ | 1 Gbit |
| メモリ構成 | 64M x 16 |
| インターフェース | Parallel |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| 電源電圧 | 1.35 V (DDR3L), 1.5 V compatible |
| パッケージ | 96-FBGA (8 x 14 mm) |
| 実装タイプ | Surface Mount |
| Temperature Grade | AUT (automotive) |
| データレート | 1866 MT/s (DDR3L-1866) |
| Termination | On-Die Termination (ODT) |
| Packaging | Tray (T/R per listing) |
MT41K64M16TW-107 AUT:J 96-fbga (8 x 14 mm) ピン配置ガイド
MT41K64M16TW-107 AUT:J (96-fbga (8 x 14 mm) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: MT41K64M16TW-107 AUT:J.
詳細は データシート をご参照ください。
主な用途
MT41K64M16TW-107 AUT:J の用途: 6 件s: Automotive Infotainment Buffer Memory, Industrial HMI and Control Memory, Networking Equipment Buffer Memory, FPGA Embedded Processing Memory, Automotive ADAS Sensor Data Buffering, Test and Measurement Instrument Memory.
Automotive Infotainment Buffer Memory
Automotive head units and infotainment SoCs require external DRAM for graphics frame buffers, navigation map caching, and audio/media buffering. The MT41K64M16TW-107 AUT:J fits this role because its AUT temperature grade is specified for automotive environments, and its 1Gbit x16 organization at 933 MHz (1866 MT/s) provides roughly 3.7 GB/s of peak bandwidth - sufficient for mid-range display resolutions. In a typical design, the DDR3L is mounted on 4-layer stackup with fly-by routing, ODT enabled, and 1.35 V VDD supplied from a PMIC DDR rail. Compared with a switching-regulator-noise-sensitive LPDDR solution, standard DDR3L with ODT tolerates slower edge rates and is more forgiving on layer count, reducing system cost. Designers should confirm the SoC's DDR3L-1866 support and derate timing over the automotive temperature range per the Micron datasheet.
おすすめ
Industrial HMI and Control Memory
Industrial human-machine interface panels, PLC buffers, and data loggers use external DDR3L as working memory for display rendering and logging queues. The MT41K64M16TW-107 AUT:J provides 1Gbit (64M x 16) at DDR3L-1866, which supports responsive graphical HMIs on MPUs such as ARM Cortex-A class processors with integrated DDR3L controllers. Its parallel x16 interface simplifies routing on 4-6 layer industrial boards, and 1.35 V operation cuts DRAM power versus 1.5 V DDR3, helping thermal design in sealed enclosures without fans. The AUT temperature grade also improves margin for panel enclosures that see wide ambient swings. Typical usage: 64 MB mapped as main memory with Linux/RTOS, refreshed per JEDEC-standard DDR3L timing; designer should budget refresh overhead (~5-8% bandwidth) at elevated temperature per the Micron datasheet temperature-compensated refresh modes.
おすすめ
Networking Equipment Buffer Memory
Switches, routers, and gateways use DDR3L DRAM for packet buffering, management-processor memory, and rule-table storage. The MT41K64M16TW-107 AUT:J offers a 16-bit data path at 1866 MT/s, giving about 3.7 GB/s peak bandwidth for management-plane tasks, with 8-bit burst and on-die termination easing multi-load routing on dense boards. Because networking products often require long service life, qualifying a second DDR3L source (for example the Samsung K4B1G1646G-BYK0 at 1Gbit x16) protects against supply disruption; both use the 96-ball FBGA footprint, though ball maps must be verified per datasheet. Design considerations include proper VTT termination on a heavily loaded address bus and controlled impedance of 50 ohms single-ended for data groups; use IBIS models from the Micron datasheet for SI simulation before tape-out.
おすすめ
FPGA Embedded Processing Memory
FPGA-based embedded systems - machine-vision cameras, test instruments, and protocol analyzers - commonly attach DDR3L SDRAM to hardened memory-controller blocks or soft DDR3 controllers. The MT41K64M16TW-107 AUT:J, at 1Gbit x16 and 933 MHz, matches the native DDR3-1866 support of mainstream FPGA memory controllers, and its x16 organization halves the ball count versus two x8 parts, simplifying BGA breakout on two signal layers. A typical implementation runs the memory controller in half-rate mode with calibration of read data capture and write leveling; expect effective usable bandwidth near 70-80% of the 3.7 GB/s peak after refresh and calibration overhead. The 8 x 14 mm FBGA fits within the FPGA keepout region on most boards, and 1.35 V operation reduces IO power in battery or passively cooled instruments.
おすすめ
Automotive ADAS Sensor Data Buffering
Advanced driver assistance systems - camera ECUs, radar front ends, and sensor-fusion modules - need low-latency DRAM to stage frame and point-cloud data before processing. The MT41K64M16TW-107 AUT:J's automotive grade addresses the extended temperature and quality expectations of these modules, while its DDR3L-1866 interface sustains multi-megapixel camera streams: one 2 MP/30 fps 12-bit stream consumes roughly 90 MB/s, comfortably within the part's ~3.7 GB/s peak, leaving headroom for fusion workloads. The 96-FBGA (8 x 14 mm) package suits the tight z-height constraints of camera modules. Layout practice for ADAS boards emphasizes matching data-group skews and isolating the DDR3L power rail with bulk and high-frequency decoupling; refer to Micron's DDR3L design guidelines and use temperature-compensated refresh for reliable retention across the automotive ambient range.
おすすめ
Test and Measurement Instrument Memory
Oscilloscopes, logic analyzers, and signal generators use DDR3L SDRAM as acquisition and waveform memory. The MT41K64M16TW-107 AUT:J provides a 16-bit parallel interface at 933 MHz clock (1866 MT/s), enabling streaming capture pipelines where ADC samples are demuxed into the DRAM through a FIFO. Its 20 ns access time class and 1.35 V supply keep instrument internal power budgets manageable in fanless designs, and the AUT grade benefits bench instruments exposed to wide lab-to-field environments. Integrators typically pair the DRAM with an FPGA memory controller running write leveling and read calibration; usable bandwidth of roughly 70-80% of peak must be budgeted for continuous streaming. The 96-ball FBGA footprint allows placement near the acquisition FPGA, shortening stub lengths on the address/command bus and improving timing margin at full speed grade.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT41K64M16TW-107 AUT:J — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT41K64M16TW-107 | K4B4G1646E-BYK000 | NT5CC64M16GP-EK | K4A4G165WG-BCWE |
|---|---|---|---|---|---|
| Package | 96-FBGA (8 x 14 mm) | 96-FBGA (8 x 14 mm) - same | 96-FBGA (8 x 14 mm) - same | 96-FBGA (8 x 14 mm) - same | 96-FBGA - DDR4 ball map, not pin-identical |
| Brand | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology | Samsung Electronics |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM | DDR4 SDRAM |
| Density | 1 Gbit | 1 Gbit | 4 Gbit | 1 Gbit | 4 Gbit |
| Organization | 64M x 16 | 64M x 16 | 256M x 16 | 64M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.5 V compatible) | 1.35 V | 1.35 V / 1.5 V | 1.35 V / 1.5 V | 1.2 V |
主な差別化要因
- Automotive AUT temperature grade （vs MT41K64M16TW-107)
- Highest DDR3L speed class in this comparison （vs NT5CC64M16GP-EK)
- DDR3L ecosystem compatibility （vs K4A4G165WG-BCWE)
設計ノート
At 933 MHz clock (1866 MT/s), DDR3L routing discipline is essential. Use fly-by topology for address/command lines with VTT termination (approximately VDDQ/2) supplied by a dedicated termination regulator. Match data-group traces within the skew budget specified in the Micron datasheet and keep single-ended impedance near 50 ohms. Simulate with Micron's IBIS models before tape-out; read the full timing tables in the manufacturer datasheet rather than relying on typical values.
Supply the core at 1.35 V for DDR3L operation; the device is also compatible with 1.5 V DDR3 rails. Decouple VDD, VDDQ, and VTT with a combination of bulk (10 uF+) and high-frequency (0.1 uF) ceramics placed at the FBGA ball clusters. Estimated: a 1Gbit x16 DDR3L at 1866 MT/s with moderate utilization draws on the order of a few hundred milliwatts, so plan the PMIC DDR rail and VTT regulator accordingly using Micron's current-derating calculator rather than estimated figures for final thermal sign-off.
Do not assume cross-brand DDR3L parts are drop-in: ball assignments change with density (1Gbit vs 4Gbit), so verify the ball map against each datasheet before reusing a land pattern. Also confirm your memory controller supports the DDR3L-1866 speed grade; if it tops out at DDR3L-1600, configure the part to run at the lower rate. For the AUT grade, confirm date-code and qualification documentation when ordering for automotive programs.
Place the DDR3L within a few centimeters of the host controller to keep stubs short at 933 MHz. For x16 single-rank designs, a 4-layer stackup (signal-GND-PWR-signal) is typically sufficient; route data groups on the outer layers adjacent to a solid reference plane. Expose adequate copper under the 96-ball FBGA thermal ball field per the Micron layout guidelines in the datasheet's mechanical section.
コンプライアンス情報
The DigiKey listing identifies the part as an automotive DDR3L offering but does not state RoHS/REACH/AEC-Q100 status in the retrieved data. Verify compliance certificates via Micron's product environmental compliance documentation.
