MT47H64M16HR-3:G - 1Gb DDR2 SDRAM 333MHz | Micron | 84-FBGA
MPN: MT47H64M16HR-3:G ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $13.56 | $13.56 |
| 10 | $12.2 | $122.00 |
| 100 | $10.85 | $1,085.00 |
| 500 | $9.75 | $4,875.00 |
| 1,000 | $8.9 | $8,900.00 |
MT47H64M16HR-3:G Overview
DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) is a volatile memory technology that transfers data on both the rising and falling edges of the clock, doubling throughput versus single-data-rate SDRAM. DDR2 builds on DDR1 with a 4n-bit prefetch architecture, on-die termination (ODT), and a lower 1.8 V core and I/O voltage, which reduces power versus 2.5 V DDR1. In the memory hierarchy, DDR2 SDRAM sits between the memory controller and the DRAM array, providing the working memory for embedded processors, networking equipment, and legacy computing platforms.
Key features of the MT47H64M16HR-3:G include a 1 Gbit density in a 64M x 16 configuration, 333 MHz clock (667 MT/s data rate), 450 ps access time, 1.7 V to 1.9 V supply voltage, and an 84-FBGA (8 x 12.5 mm) package. The device supports programmable CAS latency (CL=3 for the -3 speed grade), burst lengths of 4 or 8, and sequential or interleaved burst types. The differential data strobe (DQS/DQS#) improves signal integrity at high data rates, while the 4n-bit prefetch architecture enables high bandwidth with a modest internal clock.
The MT47H64M16HR-3:G uses Micron's DDR2 process technology with an on-chip DLL for clock synchronization and ODT for impedance matching. The 8-bank architecture allows concurrent operations across banks, improving effective bandwidth. The 1.8 V SSTL_18 I/O interface is compatible with JEDEC-standard DDR2 memory controllers, and the 84-FBGA package provides a compact footprint for space-constrained embedded designs.
Typical applications include embedded computing platforms, industrial control systems, networking and telecom equipment, legacy computing and server memory upgrades, and test and measurement instrumentation. The 1 Gbit density and 333 MHz speed make it suitable for designs requiring moderate memory capacity with DDR2-era memory controllers.
When designing with this device, ensure proper termination and impedance matching on the DDR2 bus, and verify that the memory controller supports the -3 speed grade (CL=3, 333 MHz). The 1.8 V supply must be well-regulated and decoupled to maintain signal integrity.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a single reference for the MT47H64M16HR-3:G DDR2 SDRAM.
Drop-in alternatives for MT47H64M16HR-3:G — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
MT47H64M16HR-3 IT:G
✅ Drop-In📋 Reference alternative (not in catalog)
MT47H64M16HR-3:H
✅ Drop-In📋 Reference alternative (not in catalog)
MT47H64M16HR-25E:H
✅ Drop-In📋 Reference alternative (not in catalog)
MT47H64M16HR-3 L:G
✅ Drop-In📋 Reference alternative (not in catalog)
K4T1G164QF-BCF7
✅ Drop-In📋 Reference alternative (not in catalog)
MT47H64M16HR-3:G Maximum Ratings & Electrical Characteristics
| Memory Type | DDR2 SDRAM |
| Memory Size | 1 Gbit |
| Organization | 64M x 16 (8 Meg x 16 x 8 banks) |
| Clock Frequency | 333 MHz |
| Data Rate | 667 MT/s (DDR2-667) |
| Access Time | 450 ps |
| Supply Voltage | 1.7 V to 1.9 V |
| I/O Voltage | 1.8 V (SSTL_18-compatible) |
| Interface | Parallel |
| Package | 84-FBGA (8 x 12.5 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature | 0C to +85C (commercial) |
| CAS Latency | CL=3 (-3 speed grade) |
| Burst Length | 4 or 8 |
| Data Strobe | Differential (DQS, DQS#) |
| Prefetch Architecture | 4n-bit |
| RoHS Status | Compliant |
MT47H64M16HR-3:G Pin Configuration
| Pin A1 | VDD — Power supply 1.8 V |
| Pin A2 | VSSQ — I/O ground |
| Pin A3 | DQ0 — Data input/output |
| Pin A4 | VDDQ — I/O power supply 1.8 V |
| Pin A5 | DQ2 — Data input/output |
| Pin A6 | VSSQ — I/O ground |
| Pin A7 | DQ4 — Data input/output |
| Pin A8 | VDDQ — I/O power supply 1.8 V |
| Pin A9 | DQ6 — Data input/output |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ1 — Data input/output |
| Pin B3 | VSSQ — I/O ground |
| Pin B4 | DQ3 — Data input/output |
| Pin B5 | VSSQ — I/O ground |
| Pin B6 | DQ5 — Data input/output |
| Pin B7 | VSSQ — I/O ground |
| Pin B8 | DQ7 — Data input/output |
| Pin B9 | VSSQ — I/O ground |
| Pin C1 | VDDQ — I/O power supply 1.8 V |
| Pin C2 | DQS — Data strobe |
| Pin C3 | VSSQ — I/O ground |
| Pin C4 | DQ8 — Data input/output |
| Pin C5 | VDDQ — I/O power supply 1.8 V |
| Pin C6 | DQ10 — Data input/output |
| Pin C7 | VSSQ — I/O ground |
| Pin C8 | DQ12 — Data input/output |
| Pin C9 | VDDQ — I/O power supply 1.8 V |
| Pin D1 | DQS# — Differential data strobe |
| Pin D2 | VSSQ — I/O ground |
| Pin D3 | DQ9 — Data input/output |
| Pin D4 | VSSQ — I/O ground |
| Pin D5 | DQ11 — Data input/output |
| Pin D6 | VSSQ — I/O ground |
| Pin D7 | DQ13 — Data input/output |
| Pin D8 | VSSQ — I/O ground |
| Pin D9 | DQ15 — Data input/output |
| Pin E1 | VDD — Power supply 1.8 V |
| Pin E2 | DQ14 — Data input/output |
| Pin E3 | VDDQ — I/O power supply 1.8 V |
| Pin E4 | LDQS — Lower data strobe |
| Pin E5 | VDDQ — I/O power supply 1.8 V |
| Pin E6 | UDQS — Upper data strobe |
| Pin E7 | VDDQ — I/O power supply 1.8 V |
| Pin E8 | LDQS# — Lower differential data strobe |
| Pin E9 | VDDQ — I/O power supply 1.8 V |
| Pin F1 | VSS — Ground |
| Pin F2 | UDQS# — Upper differential data strobe |
| Pin F3 | VSSQ — I/O ground |
| Pin F4 | VREF — Reference voltage |
| Pin F5 | VSSQ — I/O ground |
| Pin F6 | CK — Clock input |
| Pin F7 | VSSQ — I/O ground |
| Pin F8 | CK# — Differential clock input |
| Pin F9 | VSSQ — I/O ground |
| Pin G1 | VDDQ — I/O power supply 1.8 V |
| Pin G2 | CKE — Clock enable |
| Pin G3 | VDDQ — I/O power supply 1.8 V |
| Pin G4 | A0 — Address input |
| Pin G5 | VDDQ — I/O power supply 1.8 V |
| Pin G6 | A2 — Address input |
| Pin G7 | VDDQ — I/O power supply 1.8 V |
| Pin G8 | A4 — Address input |
| Pin G9 | VDDQ — I/O power supply 1.8 V |
| Pin H1 | VSS — Ground |
| Pin H2 | A1 — Address input |
| Pin H3 | VSSQ — I/O ground |
| Pin H4 | A3 — Address input |
| Pin H5 | VSSQ — I/O ground |
| Pin H6 | A5 — Address input |
| Pin H7 | VSSQ — I/O ground |
| Pin H8 | A6 — Address input |
| Pin H9 | VSSQ — I/O ground |
| Pin J1 | VDD — Power supply 1.8 V |
| Pin J2 | A7 — Address input |
| Pin J3 | VDDQ — I/O power supply 1.8 V |
| Pin J4 | A8 — Address input |
| Pin J5 | VDDQ — I/O power supply 1.8 V |
| Pin J6 | A9 — Address input |
| Pin J7 | VDDQ — I/O power supply 1.8 V |
| Pin J8 | A10 — Address input |
| Pin J9 | VDDQ — I/O power supply 1.8 V |
| Pin K1 | VSS — Ground |
| Pin K2 | BA0 — Bank address input |
| Pin K3 | VSSQ — I/O ground |
| Pin K4 | BA1 — Bank address input |
| Pin K5 | VSSQ — I/O ground |
| Pin K6 | BA2 — Bank address input |
| Pin K7 | VSSQ — I/O ground |
| Pin K8 | A11 — Address input |
| Pin K9 | VSSQ — I/O ground |
| Pin L1 | VDDQ — I/O power supply 1.8 V |
| Pin L2 | A12 — Address input |
| Pin L3 | VDDQ — I/O power supply 1.8 V |
| Pin L4 | CS# — Chip select |
| Pin L5 | VDDQ — I/O power supply 1.8 V |
| Pin L6 | RAS# — Row address strobe |
| Pin L7 | VDDQ — I/O power supply 1.8 V |
| Pin L8 | CAS# — Column address strobe |
| Pin L9 | VDDQ — I/O power supply 1.8 V |
| Pin M1 | VSS — Ground |
| Pin M2 | WE# — Write enable |
| Pin M3 | VSSQ — I/O ground |
| Pin M4 | ODT — On-die termination |
| Pin M5 | VSSQ — I/O ground |
| Pin M6 | NC — Not connected (per datasheet) |
| Pin M7 | VSSQ — I/O ground |
| Pin M8 | NC — Not connected (per datasheet) |
| Pin M9 | VSSQ — I/O ground |
| Pin N1 | VDD — Power supply 1.8 V |
| Pin N2 | VSS — Ground |
| Pin N3 | VDD — Power supply 1.8 V |
| Pin N4 | VSS — Ground |
| Pin N5 | VDD — Power supply 1.8 V |
| Pin N6 | VSS — Ground |
| Pin N7 | VDD — Power supply 1.8 V |
| Pin N8 | VSS — Ground |
| Pin N9 | VDD — Power supply 1.8 V |
Typical Applications
MT47H64M16HR-3:G is suitable for 6 applications: Embedded Computing Platforms, Industrial Control Systems, Networking and Telecom Equipment, Legacy Computing and Server Memory Upgrades, Test and Measurement Instrumentation, Consumer Electronics and Set-Top Boxes.
Embedded Computing Platforms
The MT47H64M16HR-3:G provides 1 Gbit of DDR2 working memory for embedded processors and SoCs that use DDR2 memory controllers. Its 333 MHz clock and 667 MT/s data rate deliver sufficient bandwidth for embedded operating systems, while the 64M x 16 organization matches the 16-bit data bus common on embedded memory controllers. The 1.8 V SSTL_18 interface is directly compatible with JEDEC-standard DDR2 PHYs, and the 84-FBGA package saves board space. Designers should verify that the SoC memory controller supports the -3 speed grade (CL=3) and provide proper ODT and termination on the DDR2 bus to maintain signal integrity at 667 MT/s.
Recommended
Industrial Control Systems
The MT47H64M16HR-3:G is used in industrial control and automation equipment that requires reliable DDR2 memory for program and data storage. Its 1 Gbit density supports control algorithms, data logging, and HMI buffers, while the 333 MHz speed provides adequate bandwidth for real-time control loops. The commercial temperature grade (0C to +85C) suits controlled factory environments; for extended-temperature installations, the MT47H64M16HR-3 IT:G variant is recommended. The 84-FBGA package and 1.8 V supply simplify integration into existing DDR2-based industrial boards, and the JEDEC-standard interface ensures compatibility with common industrial memory controllers.
Recommended
Networking and Telecom Equipment
The MT47H64M16HR-3:G provides packet buffer and routing-table memory for networking and telecom equipment such as routers, switches, and gateways. The 667 MT/s data rate supports line-rate packet processing at moderate throughputs, while the 1 Gbit density accommodates forwarding tables and queue buffers. The differential DQS/DQS# strobes improve signal integrity on the DDR2 bus, which is critical in dense networking PCBs with multiple memory devices. The 1.8 V supply and 84-FBGA package align with standard networking board designs. Designers should ensure adequate decoupling and controlled-impedance routing to meet DDR2 timing margins at 333 MHz.
Recommended
Legacy Computing and Server Memory Upgrades
The MT47H64M16HR-3:G serves as a replacement or upgrade memory device for legacy computing platforms and servers that use DDR2 SDRAM. Its 1 Gbit density and 333 MHz speed match the requirements of DDR2-era memory controllers, enabling repair and maintenance of existing systems. The 64M x 16 organization is compatible with standard DDR2 DIMM and SO-DIMM architectures, and the 84-FBGA package is the industry-standard footprint for DDR2 components. As DDR2 is a legacy technology, availability may be limited; designers should verify stock and consider the MT47H64M16HR-3 IT:G for extended-temperature server environments.
Recommended
Test and Measurement Instrumentation
The MT47H64M16HR-3:G is used in test and measurement instruments for waveform capture, data buffering, and analysis. The 1 Gbit density provides sufficient storage for high-sample-rate acquisition buffers, while the 667 MT/s data rate supports fast data transfer to the instrument processor. The 1.8 V SSTL_18 interface and differential DQS/DQS# strobes maintain signal integrity in mixed-signal instrument designs. The 84-FBGA package allows compact layouts. Designers should pay attention to power supply decoupling and ground plane integrity to minimize noise coupling into sensitive analog measurement circuits.
Recommended
Consumer Electronics and Set-Top Boxes
The MT47H64M16HR-3:G provides system memory for consumer electronics such as set-top boxes, digital TVs, and media players that use DDR2 memory. The 1 Gbit density supports operating systems, video buffers, and application data, while the 333 MHz speed handles standard-definition and moderate high-definition video processing. The 1.8 V supply reduces power versus DDR1, and the 84-FBGA package fits compact consumer PCBs. The commercial temperature grade suits indoor consumer environments. Designers should verify the SoC memory controller compatibility and provide adequate thermal relief for the FBGA package in enclosed consumer devices.
Recommended
Recommended Products Summary
Engineering reference data for MT47H64M16HR-3:G — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT47H64M16HR-3 IT:G | MT47H64M16HR-3:H | MT47H64M16HR-25E:H | K4T1G164QF-BCF7 |
|---|---|---|---|---|---|
| Package | 84-FBGA (8 x 12.5 mm) | 84-FBGA (8 x 12.5 mm) - same | 84-FBGA (8 x 12.5 mm) - same | 84-FBGA (8 x 12.5 mm) - same | FBGA-84 - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Memory Size | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit |
| Organization | 64M x 16 | 64M x 16 | 64M x 16 | 64M x 16 | 64M x 16 |
| Clock Frequency | 333 MHz | 333 MHz | 333 MHz | 400 MHz | 333 MHz |
| Supply Voltage | 1.7 V to 1.9 V | 1.7 V to 1.9 V | 1.7 V to 1.9 V | 1.7 V to 1.9 V | 1.7 V to 1.9 V |
| Operating Temperature | 0C to +85C (commercial) | -40C to +85C (industrial) | 0C to +85C (commercial) | 0C to +85C (commercial) | 0C to +85C (commercial) |
| CAS Latency | CL=3 | CL=3 | CL=3 | CL=4 | CL=3 |
| Access Time | 450 ps | 450 ps | 450 ps | 400 ps | 450 ps |
| Data Rate | 667 MT/s | 667 MT/s | 667 MT/s | 800 MT/s | 667 MT/s |
Key Differentiators
- Commercial temperature grade at lower cost (vs MT47H64M16HR-3 IT:G)
- Standard 333 MHz DDR2-667 speed grade (vs MT47H64M16HR-25E:H)
- Micron DDR2 reliability and JEDEC compliance (vs K4T1G164QF-BCF7)
Design Notes
Route DDR2 data and strobe traces with controlled 50 ohm single-ended impedance and match trace lengths within each byte lane to within +/- 5 mm. The differential DQS/DQS# pairs should be routed as 100 ohm differential pairs with matched intra-pair skew. Keep the DDR2 bus away from sensitive analog or RF traces to avoid coupling. Use a solid ground plane under the DDR2 bus for return current control.
Decouple the 1.8 V VDD and VDDQ supplies with 0.1 uF ceramic capacitors placed as close as possible to each power ball, plus bulk 10 uF capacitors per device. The VREF pin requires a stable reference, typically generated by a resistor divider from VDDQ with a 0.1 uF bypass capacitor. Estimated: at 667 MT/s, the device draws approximately 200-300 mA depending on access patterns; size the regulator accordingly.
Do not exceed the 1.9 V maximum supply voltage, as this can damage the DDR2 SDRAM. Verify that the memory controller supports the -3 speed grade (CL=3, 333 MHz) before designing in this part. The ODT (on-die termination) pin must be properly controlled by the memory controller; incorrect ODT settings cause signal integrity failures at 667 MT/s. For extended-temperature applications, use the MT47H64M16HR-3 IT:G variant.
Compliance Information
RoHS compliant per distributor data. Not AEC-Q100 qualified; commercial and industrial temperature grades available. Halogen-free status not confirmed in provided data.
