IAUC120N06S5L011ATMA1 vs IAUC100N10S5N040ATMA1 Comparação
Comparação detalhada lado a lado de IAUC120N06S5L011ATMA1 por Infineon e IAUC100N10S5N040ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ AtivoInfineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUC120N06S5L011ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $2,10 | $1,62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 60 V (S5 generation) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | — |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | — |
| Power Dissipation (P_D) | 188 W at T_C = 25 °C | — |
| Temperatura de junção de operação | -55 °C to +175 °C | — |
| Encapsulamento | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Tipo de montagem | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| Avalanche Energy Rated | Yes (EAS) | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Technology | — | OptiMOS-5 |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ TC=25C | — | 100 A (package-limited) |
| Pulsed Drain Current (IDM) | — | 400 A |
| RDS(on) max @ VGS=10V | — | 4 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Maximum Power Dissipation (PD) | — | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.9 K/W |
| Faixa de temperatura de operação | — | -55C to +175C (junction) |
| Avalanche Rating | — | 100% Avalanche tested |
| AOI Compatibility | — | Feasible for Automatic Optical Inspection |