IAUC120N06S5L011ATMA1 vs IAUC100N10S5N040ATMA1 对比

详细并排对比 IAUC120N06S5L011ATMA1 出自 Infineon 和 IAUC100N10S5N040ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 ✓ 量产中
Infineon
IAUC100N10S5N040ATMA1 IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5L011ATMA1 IAUC100N10S5N040ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.10 $1.62
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 60 V (S5 generation) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
工作结温 -55 °C to +175 °C —
封装 PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q100 qualified
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) MSL1 (up to 260C peak reflow)
Avalanche Energy Rated Yes (EAS) —
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS-5
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
Pulsed Drain Current (IDM) — 400 A
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
工作温度范围 — -55C to +175C (junction)
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection

数据手册与资源

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