IAUC120N06S5L011ATMA1 vs IAUC100N10S5N040ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5L011ATMA1 by Infineon and IAUC100N10S5N040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5L011ATMA1
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 β ActiveInfineon
IAUC100N10S5N040ATMA1
IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5L011ATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $1.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 60 V (S5 generation) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | β |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | β |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | β |
| Power Dissipation (P_D) | 188 W at T_C = 25 Β°C | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ 6 mm) | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| Avalanche Energy Rated | Yes (EAS) | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Technology | β | OptiMOS-5 |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) @ TC=25C | β | 100 A (package-limited) |
| Pulsed Drain Current (IDM) | β | 400 A |
| RDS(on) max @ VGS=10V | β | 4 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Maximum Power Dissipation (PD) | β | 167 W @ TC=25C |
| Thermal Resistance, Junction-to-Case (RthJC) | β | 0.9 K/W |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Avalanche Rating | β | 100% Avalanche tested |
| AOI Compatibility | β | Feasible for Automatic Optical Inspection |