IAUC120N06S5L011ATMA1 vs IAUC100N10S5N040ATMA1 Comparison

Detailed side-by-side comparison of IAUC120N06S5L011ATMA1 by Infineon and IAUC100N10S5N040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUC120N06S5L011ATMA1 IAUC100N10S5N040ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 60 V (S5 generation) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q100 qualified
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) MSL1 (up to 260C peak reflow)
Avalanche Energy Rated Yes (EAS) —
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS-5
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
Pulsed Drain Current (IDM) — 400 A
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
Operating Temperature Range — -55C to +175C (junction)
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection

Datasheets & Resources

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