IAUC120N06S5L011ATMA1 vs IAUC100N10S5N040ATMA1 비교

다음의 상세 나란히 비교: IAUC120N06S5L011ATMA1 제조: Infineon 및 IAUC100N10S5N040ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IAUC120N06S5L011ATMA1 IAUC100N10S5N040ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.10 $1.62
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 60 V (S5 generation) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
동작 접합 온도 -55 °C to +175 °C —
패키지 PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q100 qualified
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per JEDEC J-STD-020) MSL1 (up to 260C peak reflow)
Avalanche Energy Rated Yes (EAS) —
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS-5
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) @ TC=25C — 100 A (package-limited)
Pulsed Drain Current (IDM) — 400 A
RDS(on) max @ VGS=10V — 4 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) — 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) — 0.9 K/W
동작 온도 범위 — -55C to +175C (junction)
Avalanche Rating — 100% Avalanche tested
AOI Compatibility — Feasible for Automatic Optical Inspection

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