IAUCN10S7N074ATMA1 vs IAUCN08S7L033ATMA1 Comparação
Comparação detalhada lado a lado de IAUCN10S7N074ATMA1 por Infineon e IAUCN08S7L033ATMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Infineon
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN10S7N074ATMA1 ✓ AtivoComparação de especificações
| Parâmetro | IAUCN10S7N074ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,62 | $0,86 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) | — |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) | — |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Faixa de temperatura de operação | -55 °C to +175 °C | -55°C to +175°C (TJ) |
| Encapsulamento | PG-TDSON-8-34 (TDSON EP, 5x6 mm) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Contagem de pinos | 8 (with exposed pad) | — |
| Nível MSL | MSL2 (1 year) | 1 (per JEDEC J-STD-020, typical for this package) |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Application | 48 V Automotive Systems | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |