IAUCN10S7N074ATMA1 vs IAUCN08S7L033ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S7N074ATMA1 by Infineon and IAUCN08S7L033ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ Active

Specification Comparison

Parameter IAUCN10S7N074ATMA1 IAUCN08S7L033ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Technology OptiMOS™ 7 (Shielded-Gate Trench) OptiMOS 7 trench MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 78 A (Tj) —
Power Dissipation (P<sub>D</sub>) 96 W (Tc) —
R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) 7.4 mΩ —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Operating Temperature Range -55 °C to +175 °C -55°C to +175°C (TJ)
Package PG-TDSON-8-34 (TDSON EP, 5x6 mm) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Mounting Type Surface Mount Surface Mount
Pin Count 8 (with exposed pad) —
MSL Level MSL2 (1 year) 1 (per JEDEC J-STD-020, typical for this package)
Automotive Qualification AEC-Q101 —
RoHS Status Compliant Compliant
Lead-Free Yes —
Application 48 V Automotive Systems —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)

Datasheets & Resources

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