IRFR5410TRPBF - -100V P-Channel HEXFET MOSFET, 13A, DPAK | Infineon
N.º da peça: IRFR5410TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.21 | $121,00 |
| 500 | $0.96 | $480,00 |
| 1.000 | $0.78 | $780,00 |
| 2.000 | $0.71 | $1.420,00 |
IRFR5410TRPBF Visão geral
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power switching and amplification. P-Channel MOSFETs conduct when a negative gate-source voltage is applied relative to the source, which is the opposite polarity of N-Channel devices. They are commonly used on the high side of a load to simplify gate drive (the source can be tied to the system positive rail). Within the broader taxonomy, MOSFETs sit under discrete semiconductors, then power transistors, then active components. P-Channel MOSFETs are especially useful in load switching, battery protection, and high-side buck topologies where the system ground must remain stable.
Key features of the IRFR5410TRPBF include -100 V drain-source breakdown voltage, 205 mΩ maximum static drain-source on-resistance at VGS = -10 V, total gate charge of 70 nC typical, and a continuous drain current rating of -13 A at TC = 25 °C. The device is fully avalanche rated, supports fast switching, and is offered in an industry-standard DPAK (TO-252) surface-mount footprint. The straight-lead IRFU5410 variant is also part of the same die family.
The IRFR5410TRPBF uses an enhanced P-channel cell design that yields extremely low RDS(on) per unit of silicon, supporting efficient power conversion. The low gate charge and ruggedized body diode enable fast switching with reduced switching losses, and the avalanche energy rating allows operation into unclamped inductive loads such as solenoids and motor windings without external protection circuits in many designs.
Typical applications include high-side load switching in industrial controls, battery polarity protection and reverse-polarity protection circuits, motor drive and solenoid drivers, DC-DC converters as a synchronous high-side switch, and power-OR-ing in redundant supplies. The P-channel topology simplifies gate drive when the load is tied to system ground.
When designing with this part, ensure the gate-source voltage stays within the maximum VGS rating (±20 V absolute) and provide a pull-up resistor on the gate to keep the device off when the controller is in reset. Verify SOA against the application load profile, especially for linear-mode or inrush events, and confirm that the DPAK footprint copper-pour area provides sufficient thermal relief for the worst-case dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, helping engineers evaluate the IRFR5410TRPBF for new designs and pin-compatible replacements.
Alternativas drop-in para IRFR5410TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRFR5410TRPBF (mesmo formato e footprint) — diferindo em Technology, Package, Drain-Source Voltage (VDS), Operating Temperature Range, Operating Junction Temperature.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRFR5410TRRPBF
✅ Drop-In✓ Em estoque
$0.49 / unidade
Ver ficha técnica →IRFR5410TRLPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR5410PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR5410
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFU5410PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFR5410TRPBF Classificações máximas e características elétricas
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Total Gate Charge (Qg) typ | 70 nC |
| Encapsulamento | TO-252AA (DPAK), surface mount |
| Power Dissition (PD) at TC = 25 °C | 66 W |
| Faixa de temperatura de operação | -55 °C to +150 °C (TJ) |
| Tipo de montagem | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) |
| Avalanche Rated | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A |
Configuração de pinos do IRFR5410TRPBF
| Pino 1 | Gate — Gate control input - drive between 0 V and -10 V to turn the MOSFET on/off |
| Pino 2 | Drain — Drain connection (load side for high-side P-channel switching) |
| Pino 3 | Source — Source connection (tied to system positive rail; also on metal tab for thermal dissipation) |
| Pino TAB | Source (Tab) — Metal tab on bottom of package - electrically tied to Source (pin 3) and serves as primary thermal dissipation path |
Área de Operação Segura - DC (IRFR5410, TA = 25 °C)
Aplicações típicas
IRFR5410TRPBF é adequado para 6 aplicaçãos: High-Side Load Switching, Reverse-Polarity Battery Protection, DC-DC Converter High-Side Switch, Solenoid and Relay Driver, Power OR-ing for Redundant Supplies, Hot-Swap and Inrush Limiting.
High-Side Load Switching
The IRFR5410TRPBF is ideal for high-side load switching in industrial control modules where the load is tied to system ground. With its -100 V VDS rating and -13 A continuous drain current, it directly switches 24 V and 48 V loads such as solenoid valves, relay coils, and indicator lamps without level-shifting circuitry. The P-channel topology allows a simple pull-down gate drive from a microcontroller GPIO. The 205 mΩ RDS(on) at -10 V VGS minimizes conduction losses: at 5 A load the drop is ~1.0 V, dissipating ~5 W. The DPAK package's metal tab, when soldered to >= 1 square inch of copper pour, provides adequate thermal relief for continuous operation in fan-cooled enclosures.
Recomendado
Reverse-Polarity Battery Protection
In battery protection circuits, the IRFR5410TRPBF is placed in series with the load on the high side, with its source connected to the load and drain to the battery. A Zener diode from gate to source pulls the gate below the battery rail during normal operation, turning the MOSFET on. When the battery is reversed, the gate becomes positive relative to source, keeping the MOSFET off and protecting downstream circuitry. The -100 V rating provides ample headroom for transient voltages on 12 V and 24 V battery systems. The low RDS(on) of 205 mΩ also keeps voltage drop minimal during normal operation, preserving battery life in low-power sleep modes.
Recomendado
DC-DC Converter High-Side Switch
The IRFR5410TRPBF can be used as the high-side switch in P-channel buck converters and buck-boost topologies for -48 V telecom and 24 V industrial bus rails. Its ultra-low on-resistance per silicon area (advanced Gen 5 HEXFET process) keeps conduction losses low, while the 70 nC total gate charge enables switching frequencies above 200 kHz with manageable driver losses. In a buck converter delivering 5 A to a 5 V load from a 24 V source, the IRFR5410TRPBF dissipates approximately 1.5 W at full load, manageable in the DPAK package with standard copper pour. The avalanche rating is essential for handling the energy stored in the inductor at turn-off.
Recomendado
Solenoid and Relay Driver
For driving inductive loads such as 24 V solenoids, latching relays, and contactor coils, the IRFR5410TRPBF provides a rugged switching solution. Its fully avalanche-rated design absorbs the inductive kickback energy without requiring external freewheeling diodes in many applications, simplifying the BOM. The device can handle the high inrush current typical of solenoid energization while the steady-state current stays well within its -13 A rating. Inductive switching tests per the datasheet show reliable avalanche handling at 13 A for the ruggedized HEXFET process.
Recomendado
Power OR-ing for Redundant Supplies
In redundant power systems using two battery banks or two power supplies, the IRFR5410TRPBF can be used as an OR-ing MOSFET on each supply rail to prevent reverse current flow into a failed supply. The P-channel topology allows simple gate driving from each supply's voltage. When one supply drops below the other, the MOSFET naturally turns off, blocking reverse current. The -100 V rating accommodates wide input ranges, while the 205 mΩ RDS(on) keeps voltage drop low during normal parallel operation. Multiple devices can be paralleled for higher current capability with minimal derating thanks to the positive temperature coefficient of RDS(on).
Recomendado
Hot-Swap and Inrush Limiting
The IRFR5410TRPBF is used in hot-swap circuits where a load card must be inserted into a live backplane without causing connector arcing or voltage transients. The P-channel device sits between the backplane supply and the load capacitance; its gate is slowly charged by an RC network so the MOSFET turns on over a controlled period, limiting inrush current. The avalanche-rated design absorbs the energy stored in the load capacitance if the circuit must be interrupted under fault conditions. The 205 mΩ RDS(on) at full turn-on minimizes steady-state voltage drop after the inrush event.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRFR5410TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRFR5410TRRPBF | IRFR5410TRLPBF | IRFR5410PBF | IRFR5410 | IRFU5410PBF |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK), through-hole - same die |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS max | -100 V | -100 V | -100 V | -100 V | -100 V | -100 V |
| Continuous Drain Current (TC=25C) | -13 A | -13 A | -13 A | -13 A | -13 A | -13 A |
| RDS(on) max at VGS=-10V | 205 mΩ | 205 mΩ | 205 mΩ | 205 mΩ | 205 mΩ | 205 mΩ |
| Total Gate Charge (Qg) typ | 70 nC | 70 nC | 70 nC | 70 nC | 70 nC | 70 nC |
| Power Dissipation (TC=25C) | 66 W | 66 W | 66 W | 66 W | 66 W | 66 W |
| Packaging | Tape & Reel, 2000/reel (TR suffix) | Tape & Reel reverse, 3000/reel | Tape & Reel left-pin, 2000/reel | Tube packaging | Tube packaging | Tube, through-hole |
| Avalanche Rated | Yes | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Fifth-generation HEXFET advanced process with ultra-low RDS(on) (vs Older IRFR-series P-channel MOSFETs (e.g., IRFR5305))
- Fully avalanche-rated design (vs Non-avalanche-rated competitor parts in same DPAK package)
- Industry-standard DPAK (TO-252) footprint with broad second-source availability (vs Proprietary packages from other vendors)
Notas de projeto
Estimated thermal analysis: with TC = 25 °C rating of 66 W but typical DPAK-on-PCB theta_JA around 50-70 °C/W (1 oz copper, 1 in² pour), the practical continuous dissipation in PCB-mounted designs is around 1.5-2.5 W before exceeding TJ = 150 °C at 25 °C ambient. At 1.5 W dissipation (e.g., 5 A load, 300 mV drop), junction rise is ~75-105 °C above ambient. Provide copper pours on source tab and gate-drive return to maximize heat spreading. Forced-air cooling significantly extends the safe operating envelope.
Lay out the DPAK footprint per JEDEC TO-252 standard: pad 1 (Gate) and pad 2 (Drain) sized for ~1 A per mm² trace width with 1 oz copper, and pad 3 (Source) / thermal tab land at least 1 in² (645 mm²) of continuous copper pour. Use thermal vias (typically 8-12 x 0.3 mm) under the tab to inner copper planes. Keep the gate trace short and away from switching nodes to minimize dv/dt-induced turn-on. Place a 10 kΩ gate-source resistor directly across gate and source pins to prevent false turn-on from leakage currents during system startup.
Three pitfalls: (1) Exceeding ±20 V VGS absolute maximum - even brief transients from gate-drive inductance can exceed this; add a 10 V Zener from gate to source if the drive circuit can overshoot. (2) Linear-mode operation - when used as a slow-start or hot-swap controller, the device dissipates high power at partial turn-on; verify SOA curves for the worst-case inrush profile. (3) Body-diode reverse recovery in half-bridge topologies - the intrinsic body diode is ruggedized but switch at < 100 kHz if reverse recovery losses are a concern. Always add a TVS or snubber on inductive loads for additional margin beyond the avalanche rating.
Informações de conformidade
Lead-free finish (PBF suffix) and RoHS-compliant per Infineon product information. Not AEC-Q100 qualified - for automotive applications requiring AEC-Q100, consider the AUIRFR5410 variant. Halogen-free status not specified in available data.
