IRS2112STRPBF vs IRS2110STRPBF Comparação
Comparação detalhada lado a lado de IRS2112STRPBF por Infineon e IRS2110STRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRS2112STRPBF | IRS2110STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $1,88 | $1,42 |
| Configuration | Half-bridge (high-side + low-side) | — |
| High-side Offset Voltage (max) | 600 V | — |
| Output Source Current (typ) | 0.29 A | — |
| Output Sink Current (typ) | 0.6 A | — |
| Gate Drive Supply Range (VCC) | 10 V to 20 V | — |
| Logic Supply Range (VDD) | 3.3 V to 20 V | — |
| Logic Input Compatibility | 3.3 V, 5 V, 15 V CMOS/TTL | CMOS/TTL compatible (3.3 V logic compatible) |
| Undervoltage Lockout | Both channels (VCC and VBS) | Yes (VCC and VBS) |
| Propagation Delay (typ) | [DATA_NEEDED: propagation delay] | — |
| dV/dt Immunity | Yes (negative transient tolerant) | — |
| Shutdown Input | Yes (active-low) | Active-low, forces both outputs low |
| Encapsulamento | 16-pin SOIC wide-body | 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -40 C to +125 C | — |
| Nível MSL | 2 (1 year floor life) | 3 (168 hours) |
| Status RoHS | Compliant (Pb-free PBF suffix) | — |
| Driver Configuration | — | Half-Bridge |
| Number of Drivers | — | 2 (High-Side and Low-Side) |
| Número de saídas | — | 2 |
| Tipo de saída | — | Non-Inverting |
| Maximum Offset Voltage | — | 500 V |
| Gate Drive Supply (VCC) | — | 10 V to 20 V |
| Source/Sink Output Current (typ.) | — | 2.5 A / 2.5 A |
| Propagation Delay ton/toff (typ.) | — | 30 ns / 30 ns |
| Rise/Fall Time (typ.) | — | 17 ns / 25 ns |
| Bootstrap Diode | — | Integrated |
| Temperatura de operação | — | -40 C to +150 C |
| Lead-Free / RoHS | — | Lead-Free, RoHS Compliant |