IRS2112STRPBF vs IRS2110STRPBF 对比

详细并排对比 IRS2112STRPBF 出自 Infineon 和 IRS2110STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2112STRPBF IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IRS2112STRPBF ✓ 量产中
Infineon
IRS2110STRPBF IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon

IRS2110STRPBF ✓ 量产中

规格对比

参数 IRS2112STRPBF IRS2110STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.88 $1.42
Configuration Half-bridge (high-side + low-side) —
High-side Offset Voltage (max) 600 V —
Output Source Current (typ) 0.29 A —
Output Sink Current (typ) 0.6 A —
Gate Drive Supply Range (VCC) 10 V to 20 V —
Logic Supply Range (VDD) 3.3 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/TTL CMOS/TTL compatible (3.3 V logic compatible)
Undervoltage Lockout Both channels (VCC and VBS) Yes (VCC and VBS)
Propagation Delay (typ) [DATA_NEEDED: propagation delay] —
dV/dt Immunity Yes (negative transient tolerant) —
Shutdown Input Yes (active-low) Active-low, forces both outputs low
封装 16-pin SOIC wide-body 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel
安装类型 Surface Mount Surface Mount
工作温度范围 -40 C to +125 C —
MSL 等级 2 (1 year floor life) 3 (168 hours)
RoHS 状态 Compliant (Pb-free PBF suffix) —
Driver Configuration — Half-Bridge
Number of Drivers — 2 (High-Side and Low-Side)
输出数量 — 2
输出类型 — Non-Inverting
Maximum Offset Voltage — 500 V
Gate Drive Supply (VCC) — 10 V to 20 V
Source/Sink Output Current (typ.) — 2.5 A / 2.5 A
Propagation Delay ton/toff (typ.) — 30 ns / 30 ns
Rise/Fall Time (typ.) — 17 ns / 25 ns
Bootstrap Diode — Integrated
工作温度 — -40 C to +150 C
Lead-Free / RoHS — Lead-Free, RoHS Compliant

数据手册与资源

浏览全部产品 创建 BOM 获取报价