MPX5010DP vs MPXV12GW6U Comparação

Comparação detalhada lado a lado de MPX5010DP por NXP Semiconductors e MPXV12GW6U por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MPX5010DP MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP ✓ Ativo
NXP Semiconductors
MPXV12GW6U MPXV12GW6U - 10 kPa Uncompensated Pressure Sensor | NXP

MPXV12GW6U - 10 kPa Uncompensated Pressure Sensor | NXP

MPXV12GW6U ✓ Ativo

Comparação de especificações

Parâmetro MPX5010DP MPXV12GW6U
Marca NXP Semiconductors NXP Semiconductors
Categoria Pressure Sensors Pressure Sensors
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $9,60 $5,10
Pressure Type Differential —
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: max overload kPa] —
Sensitivity 450 mV/kPa (typical) —
Faixa de tensão de saída 0.2 V to 4.7 V —
Tensão de alimentação 4.75 V to 5.25 V (5 V typical) —
Corrente de alimentação [DATA_NEEDED: supply current mA] —
Linearity ±1.5% VFSS (typical, 0-85 C) —
Temperatura de operação 0 C to +85 C (compensated) -40 C to +125 C
Storage Temperature [DATA_NEEDED: storage temperature C] —
Port Configuration Dual axial ports, 4.93 mm (0.19 in) tube —
Encapsulamento 6-SIP Module —
Tipo de saída Analog, ratiometric Analog Millivolt (Wheatstone bridge)
Tipo de montagem Through-hole (SIP) Surface Mount
Technology Piezoresistive, monolithic silicon, on-chip signal conditioned —
Status RoHS Compliant Compliant
Output Span — 0 mV to 55 mV at 3 V excitation
Excitation Voltage — 3 V typical
Pressure Port Type — Top port, 0.22" (5.59 mm) tube
Encapsulamento / Caixa — 8-SMD, Gull Wing, Top Port
Accuracy — [DATA_NEEDED: linearity + temperature coefficient]
Configuration — Vented Gauge (reference to atmosphere)
Sensor Technology — Silicon piezoresistive (MEMS strain gauge)
Off-Pressure Offset — 0 mV minimum (no offset specified)
Compensation — Uncompensated (external calibration required)
Nível MSL — [DATA_NEEDED: MSL rating]
Bridge Resistance — [DATA_NEEDED: input / output bridge impedance]
Typical Sensitivity — [DATA_NEEDED: mV/kPa at 3 V]

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