MPX5010DP vs MPXV12GW6U 비교
다음의 상세 나란히 비교: MPX5010DP 제조: NXP Semiconductors 및 MPXV12GW6U 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MPX5010DP | MPXV12GW6U |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Pressure Sensors | Pressure Sensors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $9.60 | $5.10 |
| Pressure Type | Differential | — |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: max overload kPa] | — |
| Sensitivity | 450 mV/kPa (typical) | — |
| 출력 전압 범위 | 0.2 V to 4.7 V | — |
| 공급 전압 | 4.75 V to 5.25 V (5 V typical) | — |
| 공급 전류 | [DATA_NEEDED: supply current mA] | — |
| Linearity | ±1.5% VFSS (typical, 0-85 C) | — |
| 동작 온도 | 0 C to +85 C (compensated) | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature C] | — |
| Port Configuration | Dual axial ports, 4.93 mm (0.19 in) tube | — |
| 패키지 | 6-SIP Module | — |
| 출력 유형 | Analog, ratiometric | Analog Millivolt (Wheatstone bridge) |
| 실장 유형 | Through-hole (SIP) | Surface Mount |
| Technology | Piezoresistive, monolithic silicon, on-chip signal conditioned | — |
| RoHS 상태 | Compliant | Compliant |
| Output Span | — | 0 mV to 55 mV at 3 V excitation |
| Excitation Voltage | — | 3 V typical |
| Pressure Port Type | — | Top port, 0.22" (5.59 mm) tube |
| 패키지 / 케이스 | — | 8-SMD, Gull Wing, Top Port |
| Accuracy | — | [DATA_NEEDED: linearity + temperature coefficient] |
| Configuration | — | Vented Gauge (reference to atmosphere) |
| Sensor Technology | — | Silicon piezoresistive (MEMS strain gauge) |
| Off-Pressure Offset | — | 0 mV minimum (no offset specified) |
| Compensation | — | Uncompensated (external calibration required) |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |
| Bridge Resistance | — | [DATA_NEEDED: input / output bridge impedance] |
| Typical Sensitivity | — | [DATA_NEEDED: mV/kPa at 3 V] |