MRF7S19120NR1 vs MRF7S19170HSR3 Comparação

Comparação detalhada lado a lado de MRF7S19120NR1 por NXP Semiconductors e MRF7S19170HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF7S19120NR1 MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 ✓ Ativo
NXP Semiconductors
MRF7S19170HSR3 MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP

MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP

MRF7S19170HSR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF7S19120NR1 MRF7S19170HSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $73,00 $99,40
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Technology RF Power MOSFET (Gen7 HV8 LDMOS) HV7 LDMOS
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Avg, W-CDMA) 36 W —
Drain-Source Voltage (Vds max) 65 V (rated) —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 1.2 A —
Power Gain (typ) 18 dB at 1.99 GHz 17.2 dB
Operating Class Class AB, Class C —
Encapsulamento TO-270 WB-4 (overmolded plastic, 4-lead) —
Estilo de montagem Surface Mount / Flange Mount —
Número de pinos 5 (per Freescale/NXP datasheet) —
Lead Free Status Lead Free per datasheet —
Target Modulation W-CDMA, CDMA, multi-carrier GSM —
Application CDMA / W-CDMA base station final-stage PA —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Status (Rochester) — Active - Rochester Electronics LLC authorized stock
Frequency Band — 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900)
Test Frequency — 1.99 GHz
Drain-Source Voltage (Max) — 65 V
Operating Drain Voltage — 28 V (typical)
Test Drain Current — 1.4 A
Output Power (Avg) — 50 W (W-CDMA)
Encapsulamento / Caixa — NI-880S (ceramic flange, bolt-down)
Tipo de montagem — Chassis / Heatsink Mount (flange)
Operating Mode — Class AB / Class C
Modulation Supported — CDMA, W-CDMA, multi-carrier GSM, EDGE
Lead Finish — Ni-Au (lead-free compatible)
Status RoHS — Compliant (per NXP product page)

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