MRF7S19120NR1 vs MRF7S19170HSR3 비교
다음의 상세 나란히 비교: MRF7S19120NR1 제조: NXP Semiconductors 및 MRF7S19170HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF7S19120NR1 | MRF7S19170HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $73.00 | $99.40 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power MOSFET (Gen7 HV8 LDMOS) | HV7 LDMOS |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (Avg, W-CDMA) | 36 W | — |
| Drain-Source Voltage (Vds max) | 65 V (rated) | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 1.2 A | — |
| Power Gain (typ) | 18 dB at 1.99 GHz | 17.2 dB |
| Operating Class | Class AB, Class C | — |
| 패키지 | TO-270 WB-4 (overmolded plastic, 4-lead) | — |
| 장착 스타일 | Surface Mount / Flange Mount | — |
| 핀 수 | 5 (per Freescale/NXP datasheet) | — |
| Lead Free Status | Lead Free per datasheet | — |
| Target Modulation | W-CDMA, CDMA, multi-carrier GSM | — |
| Application | CDMA / W-CDMA base station final-stage PA | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status (Rochester) | — | Active - Rochester Electronics LLC authorized stock |
| Frequency Band | — | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max) | — | 65 V |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Drain Current | — | 1.4 A |
| Output Power (Avg) | — | 50 W (W-CDMA) |
| 패키지 / 케이스 | — | NI-880S (ceramic flange, bolt-down) |
| 실장 유형 | — | Chassis / Heatsink Mount (flange) |
| Operating Mode | — | Class AB / Class C |
| Modulation Supported | — | CDMA, W-CDMA, multi-carrier GSM, EDGE |
| Lead Finish | — | Ni-Au (lead-free compatible) |
| RoHS 상태 | — | Compliant (per NXP product page) |