MRF7S19120NR1 vs MRF7S19170HSR3 对比
详细并排对比 MRF7S19120NR1 出自 NXP Semiconductors 和 MRF7S19170HSR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
NXP Semiconductors
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
MRF7S19170HSR3 ✓ 量产中规格对比
| 参数 | MRF7S19120NR1 | MRF7S19170HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $73.00 | $99.40 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | RF Power MOSFET (Gen7 HV8 LDMOS) | HV7 LDMOS |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (Avg, W-CDMA) | 36 W | — |
| Drain-Source Voltage (Vds max) | 65 V (rated) | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 1.2 A | — |
| Power Gain (typ) | 18 dB at 1.99 GHz | 17.2 dB |
| Operating Class | Class AB, Class C | — |
| 封装 | TO-270 WB-4 (overmolded plastic, 4-lead) | — |
| 安装方式 | Surface Mount / Flange Mount | — |
| 引脚数 | 5 (per Freescale/NXP datasheet) | — |
| Lead Free Status | Lead Free per datasheet | — |
| Target Modulation | W-CDMA, CDMA, multi-carrier GSM | — |
| Application | CDMA / W-CDMA base station final-stage PA | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Status (Rochester) | — | Active - Rochester Electronics LLC authorized stock |
| Frequency Band | — | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max) | — | 65 V |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Drain Current | — | 1.4 A |
| Output Power (Avg) | — | 50 W (W-CDMA) |
| 封装 / 外壳 | — | NI-880S (ceramic flange, bolt-down) |
| 安装类型 | — | Chassis / Heatsink Mount (flange) |
| Operating Mode | — | Class AB / Class C |
| Modulation Supported | — | CDMA, W-CDMA, multi-carrier GSM, EDGE |
| Lead Finish | — | Ni-Au (lead-free compatible) |
| RoHS 状态 | — | Compliant (per NXP product page) |