CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments
N.º da peça: CSD18503Q5A ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.28 | $12,80 |
| 100 | $1.12 | $112,00 |
| 500 | $0.98 | $490,00 |
| 1.000 | $0.85 | $850,00 |
CSD18503Q5A Visão geral
A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of converters, motor drives, and load-switch circuits; within the hierarchy of power management semiconductors, it sits alongside IGBTs and analog controllers as a core switching element. The NexFET process technology from TI optimizes the RDS(on) x gate-charge figure of merit, reducing both conduction and switching losses versus older trench MOSFET generations.
Key differentiating specifications include the low 4.3 mOhm RDS(on) at 10 V gate drive, a 40 V drain-source rating suitable for 12 V and 24 V input bus systems, the low-profile 5x6 mm SON package with exposed drain pad for low thermal resistance, and an operating junction range of -55C to +150C. The SON footprint also provides excellent PCB thermal spreading through the large exposed drain pad.
Typical applications include DC-DC converter power stages, synchronous rectification, motor drive half-bridges, and hot-swap or ORing load switches. In these circuits, the low RDS(on) directly reduces conduction losses and heat-sinking requirements, while the NexFET cell structure keeps switching losses low at high frequency.
Design consideration: with 4.3 mOhm on-resistance, conduction loss at high current (e.g., 50 A at 50C junction gives roughly 13.5 W) dominates, so thermal design and copper pour area determine usable current more than the 100 A package case limit. Verify SOA limits for pulsed loads per the TI datasheet (CSD18503Q5A datasheet, TI).
Alternativas drop-in para CSD18503Q5A — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com CSD18503Q5A (mesmo formato e footprint) — diferindo em Package, Power Dissipation (Ta), Technology, Power Dissipation (Tc).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
CSD18563Q5A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
CSD18502Q5B
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
CSD18540Q5B
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
CSD19534Q5A
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.62 / unidade
Ver ficha técnica →VBGQA1403
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSC040N10NS5
⚡ Mesmo encapsulamento ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
CSD18503Q5A Classificações máximas e características elétricas
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| On-Resistance (RDS(on)) | 4.3 mOhm (3.4 mOhm typical) |
| Continuous Drain Current (Ta) | 19 A |
| Continuous Drain Current (Tc) | 100 A |
| Power Dissipation (Ta) | 3.1 W |
| Power Dissipation (Tc) | 120 W |
| Technology | NexFET |
| Encapsulamento | 8-VSONP (DQJ), 5 mm x 6 mm |
| Tipo de montagem | Surface Mount |
| Temperatura de junção de operação | -55C to +150C |
| Configuration | Single |
| Número de pinos | 8 |
Configuração de pinos do CSD18503Q5A
| Pino 1-3 | GATE — Gate drive input (pins 1-3 common gate) |
| Pino 4-5 | SOURCE — Source connection |
| Pino 6-8 | SOURCE — Source connection (continue) |
| Pino PAD | DRAIN — Exposed drain pad for electrical and thermal connection |
Área de Operação Segura
Aplicações típicas
CSD18503Q5A é adequado para 6 aplicaçãos: DC-DC Converter Power Stage, Synchronous Rectification, Motor Drive Half-Bridges, Hot-Swap and ORing Load Switches, Battery Protection and BMS, Automotive Body Power and Loads.
DC-DC Converter Power Stage
In 12 V and 24 V input buck converters, the CSD18503Q5A serves as the high-side or low-side switch. Its 40 V VDS covers transient overshoot, and the 4.3 mOhm RDS(on) keeps conduction loss low: at 20 A it dissipates only about 1.7 W at hot temperature. NexFET gate-charge optimization reduces switching loss at converter frequencies of 100 kHz to 500 kHz, improving overall efficiency versus older trench MOSFETs. Pair with a synchronous controller for best results.
Recomendado
Synchronous Rectification
As a secondary-side rectifier in isolated supplies or low-side FET in synchronous bucks, conduction loss dominates. The CSD18503Q5A 3.4 mOhm typical RDS(on) at 10 V drive minimizes IR loss; at 50 A conduction, dissipation is roughly 13.5 W hot, manageable with the SON exposed-drain-pad thermal design. The NexFET low Qrr reduces body-diode reverse recovery loss during commutation, improving efficiency and thermal margins in high-current rectifier positions.
Recomendado
Motor Drive Half-Bridges
The CSD18503Q5A fits 12 V/24 V motor drive half-bridge stages such as BLDC and brushed DC motor drivers. The 40 V rating handles inductive kickback with margin, and 4.3 mOhm RDS(on) limits resistive loss during continuous stall or high-torque events. The 5x6 mm SON package with exposed drain pad spreads heat into the PCB copper, supporting pulse loads; verify pulsed-current limits against the SOA curves in the TI datasheet for stall and PWM conditions.
Recomendado
Hot-Swap and ORing Load Switches
In backplane hot-swap and ORing FET applications on 12 V or 24 V rails, the CSD18503Q5A operates as a series pass element. Its low 4.3 mOhm RDS(on) reduces voltage drop and inrush-path loss; at 10 A load, drop is only 43 mV at hot conditions. The 40 V VDS provides headroom for fault transients. Pair with a hot-swap controller that manages gate slew during inrush to keep the MOSFET within its SOA during startup events.
Recomendado
Battery Protection and BMS
In 10S to 12S battery packs for portable and light-industrial equipment, the CSD18503Q5A serves as a discharge/charge path MOSFET. The 40 V class covers cell-stack transients, and the 4.3 mOhm RDS(on) reduces heat at continuous pack currents of 20 A to 40 A. The -55C to +150C junction range supports harsh environments. Place the SON package drain pad over a full copper area to keep junction temperature within limits during sustained discharge.
Recomendado
Automotive Body Power and Loads
For 12 V automotive loads such as pumps, fans, and lighting drivers, the CSD18503Q5A provides a robust switching element with 40 V VDS covering load-dump-adjacent transients in clamped systems. The NexFET technology achieves low RDS(on) of 4.3 mOhm for high-current channels, while the SON 5x6 mm footprint suits compact ECUs. For automotive-qualified designs, verify AEC-Q101/Q100 requirements and consider TI Q1-graded MOSFETs in the same family where qualification is mandatory.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para CSD18503Q5A — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | CSD18563Q5A | CSD18502Q5B | VBGQA1403 |
|---|---|---|---|---|
| Package | 8-VSONP (DQJ) 5x6 mm | 8-VSONP (DQJ) 5x6 mm - same | 8-VSONP (DQJ) 5x6 mm - same | SON 5x6 mm - compatible |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Will Semiconductor (VBsemi) |
| Technology | NexFET | NexFET | NexFET | Trench MOSFET |
Principais diferenciais
- Low conduction loss (vs CSD18540Q5B)
- NexFET FOM optimization (vs VBGQA1403)
- High case-power capability (vs CSD18502Q5B)
Notas de projeto
At 4.3 mOhm RDS(on), conduction loss dominates: 50 A with hot junction yields roughly 13.5 W, well above the 3.1 W free-air rating. The SON exposed drain pad must sit on a minimum 1-square-inch copper pour with thermal vias to the inner layers. Usable current is determined by thermal design, not the 100 A case rating.
Solder the exposed drain pad to a full ground/drain plane using an array of thermal vias (0.3 mm drill, filled or plugged). Minimize the power loop area between high-side and low-side MOSFETs and input bulk capacitors to reduce parasitic inductance and ringing on the drain node during switching transitions.
Verify pulsed-load limits against the SOA curves in the TI datasheet for inrush, stall, and short-circuit events. Ensure gate drive reaches the full 10 V specified for the 4.3 mOhm RDS(on) point; driving at lower VGS substantially increases on-resistance. Do not exceed the 40 V VDS rating - add clamping for inductive loads.
Informações de conformidade
Compliance data not present in provided web data. Verify RoHS/REACH status on the TI product page quality documentation.
