CSD18503Q5A - 40V N-Channel NexFET MOSFET 4.3mOhm | Texas Instruments
Référence : CSD18503Q5A ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.28 | $12,80 |
| 100 | $1.12 | $112,00 |
| 500 | $0.98 | $490,00 |
| 1 000 | $0.85 | $850,00 |
CSD18503Q5A Présentation
A power MOSFET is a voltage-controlled semiconductor switch used in the power stage of converters, motor drives, and load-switch circuits; within the hierarchy of power management semiconductors, it sits alongside IGBTs and analog controllers as a core switching element. The NexFET process technology from TI optimizes the RDS(on) x gate-charge figure of merit, reducing both conduction and switching losses versus older trench MOSFET generations.
Key differentiating specifications include the low 4.3 mOhm RDS(on) at 10 V gate drive, a 40 V drain-source rating suitable for 12 V and 24 V input bus systems, the low-profile 5x6 mm SON package with exposed drain pad for low thermal resistance, and an operating junction range of -55C to +150C. The SON footprint also provides excellent PCB thermal spreading through the large exposed drain pad.
Typical applications include DC-DC converter power stages, synchronous rectification, motor drive half-bridges, and hot-swap or ORing load switches. In these circuits, the low RDS(on) directly reduces conduction losses and heat-sinking requirements, while the NexFET cell structure keeps switching losses low at high frequency.
Design consideration: with 4.3 mOhm on-resistance, conduction loss at high current (e.g., 50 A at 50C junction gives roughly 13.5 W) dominates, so thermal design and copper pour area determine usable current more than the 100 A package case limit. Verify SOA limits for pulsed loads per the TI datasheet (CSD18503Q5A datasheet, TI).
Alternatives de remplacement direct pour CSD18503Q5A — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec CSD18503Q5A (même facteur de forme et même empreinte) — différant par Package, Power Dissipation (Ta), Technology, Power Dissipation (Tc).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
CSD18563Q5A
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
CSD18502Q5B
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
CSD18540Q5B
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
CSD19534Q5A
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$0.62 / unité
Voir la fiche technique →VBGQA1403
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC040N10NS5
⚡ Même boîtier ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
CSD18503Q5A Valeurs maximales et caractéristiques électriques
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| On-Resistance (RDS(on)) | 4.3 mOhm (3.4 mOhm typical) |
| Continuous Drain Current (Ta) | 19 A |
| Continuous Drain Current (Tc) | 100 A |
| Power Dissipation (Ta) | 3.1 W |
| Power Dissipation (Tc) | 120 W |
| Technology | NexFET |
| Boîtier | 8-VSONP (DQJ), 5 mm x 6 mm |
| Type de montage | Surface Mount |
| Température de jonction en fonctionnement | -55C to +150C |
| Configuration | Single |
| Nombre de broches | 8 |
Configuration des broches de CSD18503Q5A
| Broche 1-3 | GATE — Gate drive input (pins 1-3 common gate) |
| Broche 4-5 | SOURCE — Source connection |
| Broche 6-8 | SOURCE — Source connection (continue) |
| Broche PAD | DRAIN — Exposed drain pad for electrical and thermal connection |
Zone de fonctionnement sûr
Applications typiques
CSD18503Q5A convient pour 6 applications: DC-DC Converter Power Stage, Synchronous Rectification, Motor Drive Half-Bridges, Hot-Swap and ORing Load Switches, Battery Protection and BMS, Automotive Body Power and Loads.
DC-DC Converter Power Stage
In 12 V and 24 V input buck converters, the CSD18503Q5A serves as the high-side or low-side switch. Its 40 V VDS covers transient overshoot, and the 4.3 mOhm RDS(on) keeps conduction loss low: at 20 A it dissipates only about 1.7 W at hot temperature. NexFET gate-charge optimization reduces switching loss at converter frequencies of 100 kHz to 500 kHz, improving overall efficiency versus older trench MOSFETs. Pair with a synchronous controller for best results.
Recommandé
Synchronous Rectification
As a secondary-side rectifier in isolated supplies or low-side FET in synchronous bucks, conduction loss dominates. The CSD18503Q5A 3.4 mOhm typical RDS(on) at 10 V drive minimizes IR loss; at 50 A conduction, dissipation is roughly 13.5 W hot, manageable with the SON exposed-drain-pad thermal design. The NexFET low Qrr reduces body-diode reverse recovery loss during commutation, improving efficiency and thermal margins in high-current rectifier positions.
Recommandé
Motor Drive Half-Bridges
The CSD18503Q5A fits 12 V/24 V motor drive half-bridge stages such as BLDC and brushed DC motor drivers. The 40 V rating handles inductive kickback with margin, and 4.3 mOhm RDS(on) limits resistive loss during continuous stall or high-torque events. The 5x6 mm SON package with exposed drain pad spreads heat into the PCB copper, supporting pulse loads; verify pulsed-current limits against the SOA curves in the TI datasheet for stall and PWM conditions.
Recommandé
Hot-Swap and ORing Load Switches
In backplane hot-swap and ORing FET applications on 12 V or 24 V rails, the CSD18503Q5A operates as a series pass element. Its low 4.3 mOhm RDS(on) reduces voltage drop and inrush-path loss; at 10 A load, drop is only 43 mV at hot conditions. The 40 V VDS provides headroom for fault transients. Pair with a hot-swap controller that manages gate slew during inrush to keep the MOSFET within its SOA during startup events.
Recommandé
Battery Protection and BMS
In 10S to 12S battery packs for portable and light-industrial equipment, the CSD18503Q5A serves as a discharge/charge path MOSFET. The 40 V class covers cell-stack transients, and the 4.3 mOhm RDS(on) reduces heat at continuous pack currents of 20 A to 40 A. The -55C to +150C junction range supports harsh environments. Place the SON package drain pad over a full copper area to keep junction temperature within limits during sustained discharge.
Recommandé
Automotive Body Power and Loads
For 12 V automotive loads such as pumps, fans, and lighting drivers, the CSD18503Q5A provides a robust switching element with 40 V VDS covering load-dump-adjacent transients in clamped systems. The NexFET technology achieves low RDS(on) of 4.3 mOhm for high-current channels, while the SON 5x6 mm footprint suits compact ECUs. For automotive-qualified designs, verify AEC-Q101/Q100 requirements and consider TI Q1-graded MOSFETs in the same family where qualification is mandatory.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour CSD18503Q5A — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | CSD18563Q5A | CSD18502Q5B | VBGQA1403 |
|---|---|---|---|---|
| Package | 8-VSONP (DQJ) 5x6 mm | 8-VSONP (DQJ) 5x6 mm - same | 8-VSONP (DQJ) 5x6 mm - same | SON 5x6 mm - compatible |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Will Semiconductor (VBsemi) |
| Technology | NexFET | NexFET | NexFET | Trench MOSFET |
Principaux différenciateurs
- Low conduction loss (vs CSD18540Q5B)
- NexFET FOM optimization (vs VBGQA1403)
- High case-power capability (vs CSD18502Q5B)
Notes de conception
At 4.3 mOhm RDS(on), conduction loss dominates: 50 A with hot junction yields roughly 13.5 W, well above the 3.1 W free-air rating. The SON exposed drain pad must sit on a minimum 1-square-inch copper pour with thermal vias to the inner layers. Usable current is determined by thermal design, not the 100 A case rating.
Solder the exposed drain pad to a full ground/drain plane using an array of thermal vias (0.3 mm drill, filled or plugged). Minimize the power loop area between high-side and low-side MOSFETs and input bulk capacitors to reduce parasitic inductance and ringing on the drain node during switching transitions.
Verify pulsed-load limits against the SOA curves in the TI datasheet for inrush, stall, and short-circuit events. Ensure gate drive reaches the full 10 V specified for the 4.3 mOhm RDS(on) point; driving at lower VGS substantially increases on-resistance. Do not exceed the 40 V VDS rating - add clamping for inductive loads.
Informations de conformité
Compliance data not present in provided web data. Verify RoHS/REACH status on the TI product page quality documentation.
