CY62168EV30LL-45BVXI - 16Mb SRAM 45ns 3V | Infineon
N.º da peça: CY62168EV30LL-45BVXI ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $5.85 | $5,85 |
| 10 | $5.27 | $52,70 |
| 100 | $4.68 | $468,00 |
| 500 | $4.21 | $2.105,00 |
| 1.000 | $3.75 | $3.750,00 |
CY62168EV30LL-45BVXI Visão geral
An asynchronous SRAM is a type of volatile memory that does not require a clock for core read and write operations - the address and chip-enable signals directly control access. SRAM sits in the memory hierarchy above DRAM (no refresh needed) and below CPU registers (larger but slower than on-chip cache). The CY62168EV30LL falls into the low-power SRAM category, which trades absolute speed for ultra-low quiescent current to extend battery life in mobile equipment.
Key features include very high-speed 45 ns access, 2.2 V to 3.6 V wide voltage range, ultra-low standby power with typical standby current of 1.5 µA (maximum 12 µA), and ultra-low active power with typical active current of 2.2 mA at 1 MHz. The device offers easy memory expansion with active-low CE1 and CE2 chip-enable inputs, automatic power-down when deselected, and CMOS-compatible I/O. The 48-VFBGA (6x8) package is optimized for compact surface-mount designs.
The CY62168EV30LL-45BVXI uses a 6-transistor (6T) CMOS SRAM cell architecture with asynchronous address-latch and sense-amplifier circuitry. Its internal organization is 2 M × 8 bits with common I/O data lines and byte-wide access via CE1/CE2 control. The wide voltage range and low-power architecture are achieved through a 0.13 µm low-leakage process and dynamic power management circuits that monitor CE1/CE2 activity.
Typical applications include portable media players, handheld GPS units, cellular phone buffers, PDAs and data-acquisition devices, handheld instruments, battery-powered systems, and cellular phone base-band buffering. It also fits industrial low-power data logging and embedded systems that require non-DRAM memory with deterministic low-latency reads.
When designing with this device, ensure that VCC decoupling (0.1 µF + 1 µF ceramic) is placed within 5 mm of the supply pins. Because it is a BGA package, proper PCB pad design, reflow profile (per JEDEC J-STD-020), and X-ray inspection are mandatory for reliable assembly. Note that the 45 ns speed grade is conservative for moderate-performance buffering; for higher bandwidth consider the CY62168G30 family.
This page synthesizes Infineon/Cypress datasheet specifications, distributor stock and pricing, drop-in and same-package alternatives, and practical PCB/thermal design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para CY62168EV30LL-45BVXI — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com CY62168EV30LL-45BVXI (mesmo formato e footprint) — diferindo em Memory Type, Mounting Type, Organization, Package, RoHS Status.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
CY62168EV30LL-45BVXI
✅ Drop-In✓ Em estoque
$3.75 / unidade
Ver ficha técnica →CY62168G30-45BVXI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
CY62167EV30LL-45BVXI
✅ Drop-In✓ Em estoque
$3.78 / unidade
Ver ficha técnica →MR4A08BMA35
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MR4A08BCMA35
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
CY62147GE30-45BVXI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
CY62168EV30LL-45BVXI Classificações máximas e características elétricas
| Tipo de memória | Volatile SRAM (asynchronous) |
| Memory Family | MoBL (Micropower) SRAM |
| Tamanho da memória | 16 Mbit (2 M × 8) |
| Organização da memória | 2M × 8 |
| Access Time | 45 ns |
| Operating Voltage Range | 2.20 V to 3.60 V |
| Maximum Operating Voltage | 3.60 V |
| Minimum Operating Voltage | 2.20 V |
| Standby Current (typical) | 1.5 µA |
| Standby Current (maximum) | 12 µA |
| Active Current (typical @ 1 MHz) | 2.2 mA |
| Tipo de interface | Parallel (asynchronous) |
| Chip Enable | CE1# (active low), CE2 (active high) |
| Write Enable | WE# (active low) |
| Output Enable | OE# (active low) |
| Encapsulamento | 48-ball VFBGA (6 x 8) |
| Tipo de montagem | Surface Mount (BGA) |
| Temperatura de operação | -40 °C to +85 °C (Industrial) |
| Status RoHS | Compliant |
Configuração de pinos do CY62168EV30LL-45BVXI
| Pino A1 | A15 — Address input 15 |
| Pino A2 | A14 — Address input 14 |
| Pino A3 | A13 — Address input 13 |
| Pino A4 | A12 — Address input 12 |
| Pino A5 | VSS — Ground |
| Pino A6 | DQ3 — Data I/O 3 |
| Pino B1 | A17 — Address input 17 |
| Pino B2 | A16 — Address input 16 |
| Pino B3 | CE2 — Chip enable 2 (active high) |
| Pino B4 | A11 — Address input 11 |
| Pino B5 | DQ7 — Data I/O 7 |
| Pino B6 | DQ4 — Data I/O 4 |
| Pino C1 | A19 — Address input 19 |
| Pino C2 | A18 — Address input 18 |
| Pino C3 | VCC — Power supply |
| Pino C4 | WE# — Write enable (active low) |
| Pino C5 | OE# — Output enable (active low) |
| Pino C6 | DQ5 — Data I/O 5 |
| Pino D1 | NC — Not connected |
| Pino D2 | A20 — Address input 20 |
| Pino D3 | CE1# — Chip enable 1 (active low) |
| Pino D4 | VSS — Ground |
| Pino D5 | DQ1 — Data I/O 1 |
| Pino D6 | DQ6 — Data I/O 6 |
| Pino E1 | A5 — Address input 5 |
| Pino E2 | A8 — Address input 8 |
| Pino E3 | A9 — Address input 9 |
| Pino E4 | A10 — Address input 10 |
| Pino E5 | DQ0 — Data I/O 0 |
| Pino E6 | DQ2 — Data I/O 2 |
| Pino F1 | A0 — Address input 0 |
| Pino F2 | A1 — Address input 1 |
| Pino F3 | A2 — Address input 2 |
| Pino F4 | A3 — Address input 3 |
| Pino F5 | A4 — Address input 4 |
| Pino F6 | VSS — Ground |
| Pino G1 | VCC — Power supply |
| Pino G2 | A6 — Address input 6 |
| Pino G3 | A7 — Address input 7 |
| Pino G4 | VCC — Power supply |
| Pino G5 | VSS — Ground |
| Pino G6 | NC — Not connected |
| Pino H1 | NC — Not connected |
| Pino H2 | VSS — Ground |
| Pino H3 | NC — Not connected |
| Pino H4 | NC — Not connected |
| Pino H5 | NC — Not connected |
| Pino H6 | NC — Not connected |
Aplicações típicas
CY62168EV30LL-45BVXI é adequado para 6 aplicaçãos: Portable Media Player Buffer Memory, Handheld GPS Data Buffer, Cellular Phone Baseband Buffer, Industrial Handheld Data Acquisition, PDA Scratchpad Memory, Battery-Powered Embedded Instrument.
Portable Media Player Buffer Memory
The CY62168EV30LL-45BVXI fits portable media player buffer memory with its 16 Mb (2M x 8) byte-wide density and 45 ns access matching typical audio decoder read latency requirements. Its ultra-low 1.5 uA typical standby current extends battery life in pause/idle modes, critical for multi-hour playback. Placed between the system SoC and the audio DAC, the SRAM absorbs data bursts without requiring frequent SoC interrupts. At 2.2-3.6 V operation it interfaces directly to single-cell Li-ion supplies.
Recomendado
Handheld GPS Data Buffer
The CY62168EV30LL-45BVXI's wide 2.20-3.60 V supply range and 1.5 uA standby current make it well suited for handheld GPS data buffering, where NMEA sentence data and satellite ephemeris must be stored between GPS engine wake events. With 45 ns access and 2M x 8 organization, the SRAM provides ample bandwidth for serial-to-parallel buffering. The 48-VFBGA package suits miniaturized GPS PCBs. Its industrial -40 to +85 C operating range covers outdoor handheld use.
Recomendado
Cellular Phone Baseband Buffer
The CY62168EV30LL-45BVXI serves as a baseband signal/voice buffer in cellular phone architectures, where its 2M x 8 organization matches the byte-wide data path between modem DSP and codec. With 45 ns access and 2.2 mA active current at 1 MHz, the SRAM provides deterministic low-latency reads for real-time voice frames. Its 12 uA max standby current is acceptable for idle periods. The wide voltage tolerance allows direct connection to 2.8 V or 3.3 V baseband rails.
Recomendado
Industrial Handheld Data Acquisition
The CY62168EV30LL-45BVXI supports industrial handheld data acquisition with its 16 Mb capacity, sufficient to store thousands of sensor samples between batch uploads. Its industrial -40 to +85 C operating range tolerates factory floor temperature extremes. The asynchronous interface simplifies firmware by eliminating clock-synchronization overhead vs SDRAM. With 2.2-3.6 V supply and 1.5 uA standby, the SRAM enables battery-powered field instruments with multi-shift operation.
Recomendado
PDA Scratchpad Memory
The CY62168EV30LL-45BVXI operates as PDA scratchpad memory where its 2M x 8 organization aligns with legacy PDA bus widths and 45 ns access matches touchscreen refresh timing. With ultra-low 1.5 uA standby, the SRAM preserves battery life in suspend modes where context data must be retained. The 48-VFBGA package fits compact PDA motherboards. Its automatic power-down feature reduces active current during partial-address accesses.
Recomendado
Battery-Powered Embedded Instrument
The CY62168EV30LL-45BVXI is ideal for battery-powered embedded instruments such as portable meters and field diagnostic tools, where its 1.5 uA typical standby current contributes to multi-year battery shelf life. With 16 Mb density and 45 ns access, the SRAM stores calibration tables, measurement history, and user preferences. The 2.2-3.6 V supply range allows direct connection to two alkaline or one Li-ion cell, simplifying power architecture.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para CY62168EV30LL-45BVXI — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | CY62168G30-45BVXI | CY62167EV30LL-45BVXI | MR4A08BMA35 | MR4A08BCMA35 |
|---|---|---|---|---|---|
| Brand | Infineon (Cypress) | Infineon | Infineon | Everspin | Everspin |
| Package | 48-VFBGA (6x8) | 48-VFBGA (6x8) - same | 48-VFBGA (6x8) - same | 48-BGA - same footprint | 48-BGA - same footprint |
| Memory Type | SRAM (volatile) | SRAM (volatile) | SRAM (volatile) | MRAM (non-volatile) | MRAM (non-volatile) |
| Density | 16 Mbit (2M x 8) | 16 Mbit | 16 Mbit | 16 Mbit | 16 Mbit |
| Access Time | 45 ns | 45 ns | 45 ns | 35 ns (22% faster) | 35 ns |
| Operating Voltage | 2.20 V to 3.60 V | 2.20 V to 3.60 V | 2.20 V to 3.60 V | 2.70 V to 3.60 V (narrower) | 2.70 V to 3.60 V |
| Standby Current (typical) | 1.5 µA | 1.0 µA | 1.5 µA | Non-volatile (no standby retention current) | Non-volatile |
| Operating Temperature | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +105 °C (extended) | 0 °C to +70 °C (commercial) |
Principais diferenciais
- Ultra-low 1.5 µA typical standby current (vs Everspin MR4A08BMA35 MRAM)
- Wide 2.2 V to 3.6 V supply range (vs Everspin MR4A08BMA35 MRAM)
- Proven mature MoBL SRAM process with active production (vs Discontinued competitive 16 Mb SRAMs)
Notas de projeto
Place 0.1 µF and 1 µF ceramic decoupling capacitors within 5 mm of the VCC and VSS balls, ideally directly under or beside the BGA. Use a 4-layer PCB with continuous ground plane under the BGA to minimize inductance. VFBGA packages require reflow profile per JEDEC J-STD-020 with peak temperature 245 °C for lead-free assembly. X-ray or AOI inspection is mandatory since solder joints are hidden under the package.
Keep address, data, and control traces short and matched where possible. Series-damping resistors (22-33 Ω) on data lines may be needed for busses > 50 MHz equivalent edge rates. CE1#, CE2, OE#, and WE# are asynchronous control inputs - debounce external logic to avoid unintended writes. Avoid floating CE1#/CE2 states during power-up; tie CE2 low or to VCC through 10 kΩ to define state.
Do not exceed 3.60 V absolute maximum on VCC - the MoBL SRAM is not 5 V tolerant. For read cycles, ensure OE# is asserted before or coincident with CE1# falling edge to avoid bus contention. Note that 45 ns is the maximum access time over the full voltage range; at 3.3 V typical access is faster. The automatic power-down feature activates only when both CE1# = high AND CE2 = low - miswiring these disables power saving.
The 48-VFBGA package has good thermal conduction through balls to inner PCB copper planes. For sustained high-frequency read/write workloads, ensure the VCC balls connect to a 2 oz copper pour. The industrial -40 to +85 °C operating range covers most portable applications without derating. At maximum 2.2 mA active current the self-heating is negligible (estimated: 7 mW at 3.3 V).
Informações de conformidade
RoHS and lead-free per Infineon/Cypress product page. Not AEC-Q100 qualified (industrial grade only). REACH compliance per Infineon regulatory statements.
