CY62168EV30LL-45BVXI - 16Mb SRAM 45ns 3V | Infineon
料号： CY62168EV30LL-45BVXI ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $5.85 | $5.85 |
| 10 | $5.27 | $52.70 |
| 100 | $4.68 | $468.00 |
| 500 | $4.21 | $2,105.00 |
| 1,000 | $3.75 | $3,750.00 |
CY62168EV30LL-45BVXI 概述
An asynchronous SRAM is a type of volatile memory that does not require a clock for core read and write operations - the address and chip-enable signals directly control access. SRAM sits in the memory hierarchy above DRAM (no refresh needed) and below CPU registers (larger but slower than on-chip cache). The CY62168EV30LL falls into the low-power SRAM category, which trades absolute speed for ultra-low quiescent current to extend battery life in mobile equipment.
Key features include very high-speed 45 ns access, 2.2 V to 3.6 V wide voltage range, ultra-low standby power with typical standby current of 1.5 µA (maximum 12 µA), and ultra-low active power with typical active current of 2.2 mA at 1 MHz. The device offers easy memory expansion with active-low CE1 and CE2 chip-enable inputs, automatic power-down when deselected, and CMOS-compatible I/O. The 48-VFBGA (6x8) package is optimized for compact surface-mount designs.
The CY62168EV30LL-45BVXI uses a 6-transistor (6T) CMOS SRAM cell architecture with asynchronous address-latch and sense-amplifier circuitry. Its internal organization is 2 M × 8 bits with common I/O data lines and byte-wide access via CE1/CE2 control. The wide voltage range and low-power architecture are achieved through a 0.13 µm low-leakage process and dynamic power management circuits that monitor CE1/CE2 activity.
Typical applications include portable media players, handheld GPS units, cellular phone buffers, PDAs and data-acquisition devices, handheld instruments, battery-powered systems, and cellular phone base-band buffering. It also fits industrial low-power data logging and embedded systems that require non-DRAM memory with deterministic low-latency reads.
When designing with this device, ensure that VCC decoupling (0.1 µF + 1 µF ceramic) is placed within 5 mm of the supply pins. Because it is a BGA package, proper PCB pad design, reflow profile (per JEDEC J-STD-020), and X-ray inspection are mandatory for reliable assembly. Note that the 45 ns speed grade is conservative for moderate-performance buffering; for higher bandwidth consider the CY62168G30 family.
This page synthesizes Infineon/Cypress datasheet specifications, distributor stock and pricing, drop-in and same-package alternatives, and practical PCB/thermal design notes not found in the manufacturer datasheet alone.
直接替换替代料： CY62168EV30LL-45BVXI ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： CY62168EV30LL-45BVXI （相同外形与封装尺寸） ——差异在于 Memory Type, Mounting Type, Organization, Package, RoHS Status.
快速对比工具——选择替代料号进行并排对比：
CY62168EV30LL-45BVXI
✅ 直接替换✓ 有现货
$3.75 / 个
查看数据手册 →CY62168G30-45BVXI
✅ 直接替换📋 参考替代料（不在目录中）
CY62167EV30LL-45BVXI
✅ 直接替换✓ 有现货
$3.78 / 个
查看数据手册 →MR4A08BMA35
✅ 直接替换📋 参考替代料（不在目录中）
MR4A08BCMA35
✅ 直接替换📋 参考替代料（不在目录中）
CY62147GE30-45BVXI
✅ 直接替换📋 参考替代料（不在目录中）
CY62168EV30LL-45BVXI 最大额定值与电气特性
| 存储器类型 | Volatile SRAM (asynchronous) |
| Memory Family | MoBL (Micropower) SRAM |
| 存储容量 | 16 Mbit (2 M × 8) |
| 存储组织 | 2M × 8 |
| Access Time | 45 ns |
| Operating Voltage Range | 2.20 V to 3.60 V |
| Maximum Operating Voltage | 3.60 V |
| Minimum Operating Voltage | 2.20 V |
| Standby Current (typical) | 1.5 µA |
| Standby Current (maximum) | 12 µA |
| Active Current (typical @ 1 MHz) | 2.2 mA |
| 接口类型 | Parallel (asynchronous) |
| Chip Enable | CE1# (active low), CE2 (active high) |
| Write Enable | WE# (active low) |
| Output Enable | OE# (active low) |
| 封装 | 48-ball VFBGA (6 x 8) |
| 安装类型 | Surface Mount (BGA) |
| 工作温度 | -40 °C to +85 °C (Industrial) |
| RoHS 状态 | Compliant |
CY62168EV30LL-45BVXI 引脚配置
| 引脚 A1 | A15 — Address input 15 |
| 引脚 A2 | A14 — Address input 14 |
| 引脚 A3 | A13 — Address input 13 |
| 引脚 A4 | A12 — Address input 12 |
| 引脚 A5 | VSS — Ground |
| 引脚 A6 | DQ3 — Data I/O 3 |
| 引脚 B1 | A17 — Address input 17 |
| 引脚 B2 | A16 — Address input 16 |
| 引脚 B3 | CE2 — Chip enable 2 (active high) |
| 引脚 B4 | A11 — Address input 11 |
| 引脚 B5 | DQ7 — Data I/O 7 |
| 引脚 B6 | DQ4 — Data I/O 4 |
| 引脚 C1 | A19 — Address input 19 |
| 引脚 C2 | A18 — Address input 18 |
| 引脚 C3 | VCC — Power supply |
| 引脚 C4 | WE# — Write enable (active low) |
| 引脚 C5 | OE# — Output enable (active low) |
| 引脚 C6 | DQ5 — Data I/O 5 |
| 引脚 D1 | NC — Not connected |
| 引脚 D2 | A20 — Address input 20 |
| 引脚 D3 | CE1# — Chip enable 1 (active low) |
| 引脚 D4 | VSS — Ground |
| 引脚 D5 | DQ1 — Data I/O 1 |
| 引脚 D6 | DQ6 — Data I/O 6 |
| 引脚 E1 | A5 — Address input 5 |
| 引脚 E2 | A8 — Address input 8 |
| 引脚 E3 | A9 — Address input 9 |
| 引脚 E4 | A10 — Address input 10 |
| 引脚 E5 | DQ0 — Data I/O 0 |
| 引脚 E6 | DQ2 — Data I/O 2 |
| 引脚 F1 | A0 — Address input 0 |
| 引脚 F2 | A1 — Address input 1 |
| 引脚 F3 | A2 — Address input 2 |
| 引脚 F4 | A3 — Address input 3 |
| 引脚 F5 | A4 — Address input 4 |
| 引脚 F6 | VSS — Ground |
| 引脚 G1 | VCC — Power supply |
| 引脚 G2 | A6 — Address input 6 |
| 引脚 G3 | A7 — Address input 7 |
| 引脚 G4 | VCC — Power supply |
| 引脚 G5 | VSS — Ground |
| 引脚 G6 | NC — Not connected |
| 引脚 H1 | NC — Not connected |
| 引脚 H2 | VSS — Ground |
| 引脚 H3 | NC — Not connected |
| 引脚 H4 | NC — Not connected |
| 引脚 H5 | NC — Not connected |
| 引脚 H6 | NC — Not connected |
典型应用
CY62168EV30LL-45BVXI 适用于 6 应用s: Portable Media Player Buffer Memory, Handheld GPS Data Buffer, Cellular Phone Baseband Buffer, Industrial Handheld Data Acquisition, PDA Scratchpad Memory, Battery-Powered Embedded Instrument.
Portable Media Player Buffer Memory
The CY62168EV30LL-45BVXI fits portable media player buffer memory with its 16 Mb (2M x 8) byte-wide density and 45 ns access matching typical audio decoder read latency requirements. Its ultra-low 1.5 uA typical standby current extends battery life in pause/idle modes, critical for multi-hour playback. Placed between the system SoC and the audio DAC, the SRAM absorbs data bursts without requiring frequent SoC interrupts. At 2.2-3.6 V operation it interfaces directly to single-cell Li-ion supplies.
推荐
Handheld GPS Data Buffer
The CY62168EV30LL-45BVXI's wide 2.20-3.60 V supply range and 1.5 uA standby current make it well suited for handheld GPS data buffering, where NMEA sentence data and satellite ephemeris must be stored between GPS engine wake events. With 45 ns access and 2M x 8 organization, the SRAM provides ample bandwidth for serial-to-parallel buffering. The 48-VFBGA package suits miniaturized GPS PCBs. Its industrial -40 to +85 C operating range covers outdoor handheld use.
推荐
Cellular Phone Baseband Buffer
The CY62168EV30LL-45BVXI serves as a baseband signal/voice buffer in cellular phone architectures, where its 2M x 8 organization matches the byte-wide data path between modem DSP and codec. With 45 ns access and 2.2 mA active current at 1 MHz, the SRAM provides deterministic low-latency reads for real-time voice frames. Its 12 uA max standby current is acceptable for idle periods. The wide voltage tolerance allows direct connection to 2.8 V or 3.3 V baseband rails.
推荐
Industrial Handheld Data Acquisition
The CY62168EV30LL-45BVXI supports industrial handheld data acquisition with its 16 Mb capacity, sufficient to store thousands of sensor samples between batch uploads. Its industrial -40 to +85 C operating range tolerates factory floor temperature extremes. The asynchronous interface simplifies firmware by eliminating clock-synchronization overhead vs SDRAM. With 2.2-3.6 V supply and 1.5 uA standby, the SRAM enables battery-powered field instruments with multi-shift operation.
推荐
PDA Scratchpad Memory
The CY62168EV30LL-45BVXI operates as PDA scratchpad memory where its 2M x 8 organization aligns with legacy PDA bus widths and 45 ns access matches touchscreen refresh timing. With ultra-low 1.5 uA standby, the SRAM preserves battery life in suspend modes where context data must be retained. The 48-VFBGA package fits compact PDA motherboards. Its automatic power-down feature reduces active current during partial-address accesses.
推荐
Battery-Powered Embedded Instrument
The CY62168EV30LL-45BVXI is ideal for battery-powered embedded instruments such as portable meters and field diagnostic tools, where its 1.5 uA typical standby current contributes to multi-year battery shelf life. With 16 Mb density and 45 ns access, the SRAM stores calibration tables, measurement history, and user preferences. The 2.2-3.6 V supply range allows direct connection to two alkaline or one Li-ion cell, simplifying power architecture.
推荐
推荐产品汇总
工程参考数据： CY62168EV30LL-45BVXI ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | CY62168G30-45BVXI | CY62167EV30LL-45BVXI | MR4A08BMA35 | MR4A08BCMA35 |
|---|---|---|---|---|---|
| Brand | Infineon (Cypress) | Infineon | Infineon | Everspin | Everspin |
| Package | 48-VFBGA (6x8) | 48-VFBGA (6x8) - same | 48-VFBGA (6x8) - same | 48-BGA - same footprint | 48-BGA - same footprint |
| Memory Type | SRAM (volatile) | SRAM (volatile) | SRAM (volatile) | MRAM (non-volatile) | MRAM (non-volatile) |
| Density | 16 Mbit (2M x 8) | 16 Mbit | 16 Mbit | 16 Mbit | 16 Mbit |
| Access Time | 45 ns | 45 ns | 45 ns | 35 ns (22% faster) | 35 ns |
| Operating Voltage | 2.20 V to 3.60 V | 2.20 V to 3.60 V | 2.20 V to 3.60 V | 2.70 V to 3.60 V (narrower) | 2.70 V to 3.60 V |
| Standby Current (typical) | 1.5 µA | 1.0 µA | 1.5 µA | Non-volatile (no standby retention current) | Non-volatile |
| Operating Temperature | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +105 °C (extended) | 0 °C to +70 °C (commercial) |
关键差异点
- Ultra-low 1.5 µA typical standby current （对比 Everspin MR4A08BMA35 MRAM)
- Wide 2.2 V to 3.6 V supply range （对比 Everspin MR4A08BMA35 MRAM)
- Proven mature MoBL SRAM process with active production （对比 Discontinued competitive 16 Mb SRAMs)
设计说明
Place 0.1 µF and 1 µF ceramic decoupling capacitors within 5 mm of the VCC and VSS balls, ideally directly under or beside the BGA. Use a 4-layer PCB with continuous ground plane under the BGA to minimize inductance. VFBGA packages require reflow profile per JEDEC J-STD-020 with peak temperature 245 °C for lead-free assembly. X-ray or AOI inspection is mandatory since solder joints are hidden under the package.
Keep address, data, and control traces short and matched where possible. Series-damping resistors (22-33 Ω) on data lines may be needed for busses > 50 MHz equivalent edge rates. CE1#, CE2, OE#, and WE# are asynchronous control inputs - debounce external logic to avoid unintended writes. Avoid floating CE1#/CE2 states during power-up; tie CE2 low or to VCC through 10 kΩ to define state.
Do not exceed 3.60 V absolute maximum on VCC - the MoBL SRAM is not 5 V tolerant. For read cycles, ensure OE# is asserted before or coincident with CE1# falling edge to avoid bus contention. Note that 45 ns is the maximum access time over the full voltage range; at 3.3 V typical access is faster. The automatic power-down feature activates only when both CE1# = high AND CE2 = low - miswiring these disables power saving.
The 48-VFBGA package has good thermal conduction through balls to inner PCB copper planes. For sustained high-frequency read/write workloads, ensure the VCC balls connect to a 2 oz copper pour. The industrial -40 to +85 °C operating range covers most portable applications without derating. At maximum 2.2 mA active current the self-heating is negligible (estimated: 7 mW at 3.3 V).
合规信息
RoHS and lead-free per Infineon/Cypress product page. Not AEC-Q100 qualified (industrial grade only). REACH compliance per Infineon regulatory statements.
