H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix
N.º da peça: H5ANAG6NBJR-RDC ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.8 | $118,00 |
| 100 | $10.95 | $1.095,00 |
| 500 | $10.2 | $5.100,00 |
| 1.000 | $9.6 | $9.600,00 |
H5ANAG6NBJR-RDC Visão geral
DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, the dominant main-memory technology for computers and embedded systems. As a volatile memory class within the broader DRAM hierarchy, DDR4 transfers data on both rising and falling edges of the clock, achieving double the bandwidth of DDR3 at the same clock rate while reducing operating voltage from 1.5V to 1.2V. SK hynix DDR4 SDRAMs offer fully synchronous operation referenced to both rising and falling edges of the clock, with all addresses and control inputs registered on the positive edge of the clock and data qualification via DQS strobes.
The H5ANAG6NBJR-RDC offers 16Gb density per component, enabling large memory configurations with fewer devices. The -RDC speed grade supports 2666 Mbps operation, and the device conforms to the JEDEC DDR4 SDRAM standard. Internal bank grouping, burst chop, and on-die termination reduce signal-integrity burden on the memory controller. Per SK hynix product documentation, the 16Gb DDR4 family (H5ANAG4/8/6NCJR and related NBJR speed grades) targets main-memory applications requiring large memory density and high bandwidth.
Typical applications include server main memory modules (RDIMM/LRDIMM), desktop PC DIMMs, networking and telecommunications equipment, industrial computing, and embedded systems based on x86 or ARM processors with DDR4 memory controllers. The x16 organization suits designs that require 16-bit data buses or are populating narrow channels.
A key design consideration is signal integrity: DDR4 fly-by routing with on-die termination (ODT), length-matched traces, and reference voltage (VTT) termination quality directly determine the achievable data rate. Memory controllers must be trained for read/write leveling at 2666 Mbps operation.
This page synthesizes verified distributor data, drop-in same-family alternatives, pricing tiers, and practical DDR4 design notes not consolidated in the manufacturer datasheet.
Alternativas drop-in para H5ANAG6NBJR-RDC — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5ANAG6NBJR-RDC (mesmo formato e footprint) — diferindo em Package, RoHS Status, Interface, Density, Organization.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5ANAG6NBJR-PBC
✅ Drop-In✓ Em estoque
$6.45 / unidade
Ver ficha técnica →H5ANAG8NBJR-RDC
✅ Drop-In✓ Em estoque
$3.55 / unidade
Ver ficha técnica →H5ANAG8NBJR-PBC
✅ Drop-In✓ Em estoque
$31.5 / unidade
Ver ficha técnica →H5ANAG8NBJR-VKC
✅ Drop-In✓ Em estoque
$8.6 / unidade
Ver ficha técnica →H5ANAG6NCJR-xxC
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
H5ANAG6NBJR-RDC Especificações
| Tipo de memória | DDR4 SDRAM |
| Memory Organization | 16Gb x16 |
| Density | 16 Gb |
| Taxa de dados | 2666 Mbps (speed grade -RDC) |
| Supply Voltage (VDD) | 1.2 V |
| Interface | Synchronous, double data rate |
| Clocking | Fully synchronous to both clock edges |
| Encapsulamento | FBGA (Ball Grid Array), surface mount |
| Tipo de montagem | Surface Mount |
| Technology | CMOS |
| Standard | JEDEC DDR4 SDRAM |
| Application | Main memory |
| On-Die Termination (ODT) | Supported (DDR4 feature) |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) |
Guia de Configuração de Pinos do H5ANAG6NBJR-RDC fbga (ball grid array), surface mount
Configuração de pinos para H5ANAG6NBJR-RDC (pacote fbga (ball grid array), surface mount). A numeração dos pinos, funções e diagramas de conexão estão definidos no datasheet do fabricante. Consulte-o para o footprint exato e diretrizes de soldagem.
Nenhum dado detalhado de pinagem disponível para H5ANAG6NBJR-RDC.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
H5ANAG6NBJR-RDC é adequado para 6 aplicaçãos: Server Main Memory Modules, Desktop PC Memory (UDIMM), Networking and Telecommunications Equipment, Industrial Computing and Automation, Embedded ARM/x86 System Boards, Test and Measurement Instrumentation.
Server Main Memory Modules
The H5ANAG6NBJR-RDC is ideally suited for server RDIMM/LRDIMM main memory, where SK hynix's 16Gb DDR4 density and 2666 Mbps bandwidth deliver large capacity and high throughput. Two x16 devices provide 4 GB per rank at 1.2V, cutting memory-subsystem power roughly 20% versus DDR3. In module designs, devices connect in fly-by topology to the address/command bus with on-die termination absorbing reflections; the 2666 Mbps rate supports server-class data rates when controller training (read/write leveling, VrefDQ) is applied per JEDEC DDR4. Designers must budget for refresh current and use per-byte DQS strobes for data capture reliability across ranks.
Recomendado
Desktop PC Memory (UDIMM)
For desktop UDIMMs, the H5ANAG6NBJR-RDC offers 16Gb per component, enabling 8 GB modules with just four x16 devices. Its 2666 Mbps speed grade supports mainstream DDR4-2666 platforms, and the 1.2V VDD keeps module power within desktop thermal envelopes. The x16 organization reduces component count versus x8 designs, lowering BOM cost while maintaining full bandwidth on 64-bit channels when four devices are populated per rank. Design considerations include JEDEC-standard SPD programming for correct BIOS detection, VTT bus termination quality, and layout length matching to the 2666 Mbps eye. SK hynix documentation notes this 16Gb family is optimized for main memory requiring large density and high bandwidth, exactly the desktop use case.
Recomendado
Networking and Telecommunications Equipment
Routers, switches, and 5G telecom line cards use H5ANAG6NBJR-RDC as packet buffer and control-plane main memory. The 16Gb density per device supports deep packet buffering, while the 2666 Mbps data rate sustains the read/write throughput required by network processors. The x16 bus width maps efficiently to 16-bit memory channels on communication SoCs, minimizing device count on dense line cards. In these systems, DDR4 features such as bank groups enable parallel access streams that improve effective bandwidth for irregular packet I/O patterns. Engineers should implement controller-based ODT optimization and confirm refresh scheduling does not collide with deterministic-latency requirements of the packet-processing pipeline.
Recomendado
Industrial Computing and Automation
Industrial PCs, machine-vision controllers, and factory automation gateways employ H5ANAG6NBJR-RDC for 1.2V, 16Gb-per-device main memory with 2666 Mbps throughput for vision processing and real-time control workloads. Two devices yield 4 GB on a 32-bit channel, sufficient for embedded x86 or ARM platforms while conserving board area on compact COM Express or ATX form factors. Designers must confirm the datasheet operating temperature range covers the industrial ambient, apply conformal-coating-compatible layout rules, and perform thorough controller training at target temperature extremes since DRAM timing margins shift with temperature. The x16 organization also shortens data-bus routing on four-layer industrial boards.
Recomendado
Embedded ARM/x86 System Boards
Custom embedded boards based on DDR4-capable SoCs use the H5ANAG6NBJR-RDC where a single or paired 16Gb x16 device provides 2-4 GB of main memory. The x16 bus maps directly to 16-bit DDR4 channels common on ARM application processors and low-power x86 chipsets, eliminating bus-width mismatch. At 2666 Mbps, the device keeps pace with modern SoC memory controllers, and bank-group architecture improves random-access efficiency for Linux/RTOS workloads. Key design tasks include board-level signal-integrity simulation of the fly-by address bus, correct SPD or strap configuration of memory timings, and verifying the SoC memory-training firmware supports the -RDC speed grade before production qualification.
Recomendado
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators rely on H5ANAG6NBJR-RDC for deep capture memory. Sixteen-gigabit-per-device density enables seconds of waveform storage, while the 2666 Mbps interface sustains the sustained transfer rates needed to stream acquisition data to memory. The 1.2V operation reduces internal instrument heat load, important in fanless benchtop designs. In instruments, memory controllers often operate in performance modes with bank interleaving to maximize streaming bandwidth; engineers should validate read/write leveling across the full temperature range and consider ECC or double-bank schemes since measurement data integrity directly affects published instrument accuracy specifications.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5ANAG6NBJR-RDC — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5ANAG6NBJR-PBC | H5ANAG8NBJR-RDC | H5ANAG8NBJR-PBC |
|---|---|---|---|---|
| Package | FBGA (DDR4 standard) | FBGA - same | FBGA - same | FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | x16 | x16 | x8 | x8 |
| Speed Grade / Data Rate | -RDC (2666 Mbps class) | -PBC (lower speed class) | -RDC (2666 Mbps class) | -PBC (lower speed class) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Primary Use Case | High-speed main memory, narrow 16-bit channels | Cost-optimized x16 main memory | Standard 64/72-bit DIMM ranks | Cost-optimized x8 DIMM ranks |
Principais diferenciais
- 16Gb density per component in x16 organization (vs H5ANAG8NBJR-RDC)
- Faster -RDC speed grade (vs H5ANAG6NBJR-PBC)
- 20% lower operating voltage than DDR3 (vs DDR3 predecessors)
Notas de projeto
At the -RDC 2666 Mbps data rate, DDR4 signal integrity dominates design success. Use fly-by routing for address/command with on-die termination (ODT) enabled, length-match DQ/DQS traces within tight skew budgets, and maintain solid 1.2V VDDQ planes with dense decoupling. Simulate the DDR4 eye at the target bit rate before layout release; marginal single-ended routing that passes at DDR4-2133 commonly fails at 2666 Mbps.
DDR4 operates from 1.2V VDD/VDDQ per JEDEC; budget power for both core and termination current. VTT termination on address/command lines can draw significant peak current during simultaneous transitions - provision a dedicated VTT rail with bulk capacitance sized for worst-case switching. Estimated: dynamic current scales with frequency and bus utilization, so compute IDD values from the datasheet tables at your actual speed grade, not family maximums.
Verify controller memory-training firmware supports the -RDC speed grade and the x16 organization before committing to production - x16 devices use a different ballout and DQS topology than x8 parts, and the two cannot be intermixed on the same rank. Also confirm the speed-grade suffix on incoming parts: substituting a -PBC grade on a board timed for 2666 Mbps will fail qualification.
Informações de conformidade
Compliance status not stated in the provided web data; consult SK hynix product documentation and PCN declarations for RoHS/REACH confirmation.
