H5ANAG8NBJR-PBC - 16Gb DDR4 SDRAM x8, FBGA-78 | SK Hynix
N.º da peça: H5ANAG8NBJR-PBC ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $42 | $42,00 |
| 10 | $39.5 | $395,00 |
| 100 | $36.8 | $3.680,00 |
| 500 | $34.2 | $17.100,00 |
| 1.000 | $31.5 | $31.500,00 |
H5ANAG8NBJR-PBC Visão geral
DDR4 SDRAM is the fourth generation of double-data-rate synchronous DRAM, a form of volatile semiconductor main memory. Within the system hierarchy, DRAM sits between CPU caches and non-volatile storage, providing the high-bandwidth working memory for processors. DDR4 doubles the internal bank count of DDR3 to 16 banks (organized in 4 bank groups), adds a DBI/cyclic-redundancy-check (CRC) capability on the data bus, lowers operating voltage from 1.5 V/1.35 V to 1.2 V, and introduces bank-group architecture for improved effective bandwidth at the same clock rate.
Key features of this device include 16 Gbit density, a x8 organization suited to ECC-capable and desktop/server memory arrays, 1.2 V core supply with programmable VDDQ, 8n prefetch architecture with bank-group parallelism, and on-die termination (ODT) for signal integrity at high data rates. The BJR die revision reflects SK Hynix's process refinements for yield and power. The PBC suffix encodes the speed/latency bin (DDR4-2666 class, CL19 typical module equivalence).
The device uses a fly-by-terminated point-to-multipoint command/address topology per the DDR4 JEDEC-style interface, with a 1.2 V SSTL12 I/O signaling environment, DLL-based read capture, and programmable CAS latency and additive latency. Refresh includes normal 1x/2x/4x refresh modes and self-refresh for low-power retention.
Typical applications include desktop and notebook UDIMM/SODIMM modules, server RDIMM and ECC-DIMM memory subsystems, industrial controllers and embedded x86/ARM boards with DDR4 memory controllers, networking and telecom line cards, and graphics/display processing platforms.
Design consideration: DDR4 fly-by routing requires length-matched command/address traces with VTT termination, and the memory controller must be programmed with the correct speed bin, CL, and refresh settings from the device mode registers; always confirm the exact speed code against the SK Hynix datasheet before substitution.
This page synthesizes verified distributor listings, drop-in alternatives across SK Hynix, Micron and Samsung FBGA-78 DDR4 components, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para H5ANAG8NBJR-PBC — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5ANAG8NBJR-PBC (mesmo formato e footprint) — diferindo em RoHS Status, Package, Interface, Density, Supply Voltage.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5ANAG8NCJR
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
H5AN8G8NCJR-PBC
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$2.4 / unidade
Ver ficha técnica →H5AN8G8NAFR-PBC
✅ Drop-In✓ Em estoque
$2.2 / unidade
Ver ficha técnica →MT40A2G8AG-062E
✅ Drop-In✓ Em estoque
$9.75 / unidade
Ver ficha técnica →MT40A1G8AG-062E
✅ Drop-In✓ Em estoque
$3.1 / unidade
Ver ficha técnica →K4A8G085WB-BCPB
✅ Drop-In✓ Em estoque
$13.7813 / unidade
Ver ficha técnica →H5ANAG8NBJR-PBC Especificações
| Tipo de memória | DDR4 SDRAM |
| Density | 16 Gbit (2 GB) |
| Organização da memória | x8 |
| Supply Voltage (VDD) | 1.2 V |
| Speed Grade / Data Rate | PBC suffix, DDR4-2666 class |
| Encapsulamento | FBGA-78 (7.5 mm x 11 mm) |
| Tipo de montagem | Surface Mount |
| Bank Architecture | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | 8n |
| Tipo de interface | Parallel, SSTL12 |
| Refresh | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | BJR |
| Status RoHS | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
Guia de Configuração de Pinos do H5ANAG8NBJR-PBC fbga-78 (7.5 mm x 11 mm)
Configuração de pinos para H5ANAG8NBJR-PBC (pacote fbga-78 (7.5 mm x 11 mm)). A numeração dos pinos, funções e diagramas de conexão estão definidos no datasheet do fabricante. Consulte-o para o footprint exato e diretrizes de soldagem.
Nenhum dado detalhado de pinagem disponível para H5ANAG8NBJR-PBC.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
H5ANAG8NBJR-PBC é adequado para 6 aplicaçãos: Desktop and Notebook Memory Modules, Server RDIMM and ECC Memory Subsystems, Embedded Industrial Controllers, Networking and Telecom Line Cards, Consumer Electronics and Smart Displays, Test, Measurement and FPGA Platforms.
Desktop and Notebook Memory Modules
The H5ANAG8NBJR-PBC provides 2 GB of DDR4 memory per x8 device, making it efficient for UDIMM and SODIMM construction where eight x8 devices yield a 16 GB unbuffered module. Its DDR4-2666-class speed and bank-group architecture sustain mainstream platform bandwidth, while the 1.2 V supply keeps module power within JEDEC module thermal envelopes. Placed in a standard fly-by command/address topology with ODT and VTT termination, the part trains reliably with common desktop memory controllers; designers should confirm the speed suffix in BIOS training tables since B-die and C-die revisions can carry different supported latency bins.
Recomendado
Server RDIMM and ECC Memory Subsystems
With 16Gb density, x8 organization, and DDR4-2666-class bandwidth, the H5ANAG8NBJR-PBC fits server RDIMM and ECC-DIMM designs where x8 devices enable single-bit-error correction with standard SECDED ECC. Its 16-bank, 4-bank-group architecture with 8n prefetch sustains the sequential throughput database and virtualization workloads demand, while the 1.2 V rail reduces per-module power in dense chassis. The device supports 1x/2x/4x refresh modes, letting the register/controller trade thermal refresh rate against performance in high-temperature server airflow conditions. Verify registered-clock buffering and address parity circuitry are placed between the controller and this DRAM per module design rules.
Recomendado
Embedded Industrial Controllers
Industrial x86 and ARM boards with DDR4 memory controllers use the H5ANAG8NBJR-PBC to reach multiple gigabytes of working memory within a compact ball-grid footprint. The 1.2 V SSTL12 interface matches low-power embedded SoC memory controllers, and self-refresh retains memory content during deep-sleep states important in battery-backed or always-on industrial nodes. Each device contributes 2 GB, so a single x8 channel populated with two or four devices reaches 4-8 GB without complex stacking. Designers should follow fly-by routing with VTT termination and validate the controller's speed-bin table against the -PBC rating; wide ambient swings demand checking refresh requirements at temperature.
Recomendado
Networking and Telecom Line Cards
Switch, router, and 5G baseband line cards buffer high-rate packet streams in DRAM, and the H5ANAG8NBJR-PBC supplies 2 GB per device at DDR4-2666-class bandwidth for this role. Bank-group interleaving sustains the random-access patterns typical of packet buffering, while on-die termination keeps signal integrity intact on long, multi-drop line-card traces. The FBGA-78 footprint allows dense placement alongside network processors and switch ASICs. Thermal design matters in convection-coled telecom racks - use ground-plane copper spreading under the package and derate the effective data rate if ambient exceeds the component's operating range; confirm the exact range on the manufacturer datasheet.
Recomendado
Consumer Electronics and Smart Displays
Smart TVs, set-top boxes, and digital-media SoCs rely on DDR4 main memory for frame buffering and application execution, and the H5ANAG8NBJR-PBC provides 2 GB per x8 device at low 1.2 V power. Its self-refresh mode supports low standby power between viewing sessions, and the compact 7.5 mm x 11 mm FBGA-78 footprint fits the tight board real estate of thin consumer enclosures. The DDR4-2666-class rate covers 4K video decode bandwidth requirements of mainstream media SoCs. Consumer designers should verify SoC memory-controller support for the -PBC speed bin and apply controlled-impedance routing on byte lanes to pass signal-integrity validation in cost-sensitive four-layer boards.
Recomendado
Test, Measurement and FPGA Platforms
FPGA development boards, logic analyzers, and arbitrary-waveform instruments use DDR4 components like the H5ANAG8NBJR-PBC as deep capture and data-logging memory. Its 16Gb density extends record length in instrument designs, while the x8 organization aligns naturally with 8-bit-wide FPGA memory-controller PHYs from Xilinx and Intel ecosystems. DDR4-2666-class bandwidth supports sustained streaming into the array, and bank-group architecture reduces turnaround stalls in burst-capture scenarios. Designers must honor FPGA calibration routines (write leveling, read training) and manage ODT settings per the controller guidelines; a solid VTT plane and per-byte-lane length matching are essential for reliable operation at full rate.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5ANAG8NBJR-PBC — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5ANAG8NCJR | H5AN8G8NCJR-PBC | H5AN8G8NAFR-PBC | MT40A2G8AG-062E | K4A8G085WB-BCPB |
|---|---|---|---|---|---|---|
| Package | FBGA-78 (7.5 mm x 11 mm) | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Density | 16 Gbit (2 GB) | 16 Gbit | 8 Gbit | 8 Gbit | 16 Gbit | 8 Gbit |
| Organization | x8 | x8 | x8 | x8 | x8 | x8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Data Rate Class | DDR4-2666 class (-PBC) | Per suffix (verify) | DDR4-2666 class | DDR4-2666 class | DDR4-2666 (-062E) | DDR4-2666 class |
| Bank / Bank-Group Architecture | 16 banks / 4 bank groups (DDR4 standard) | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups | 16 banks / 4 bank groups |
| Density Match vs Target | Reference (100%) | 100% - identical 16Gb | 50% - 8Gb | 50% - 8Gb | 100% - identical 16Gb | 50% - 8Gb |
Principais diferenciais
- Double the density per device versus 8Gb DDR4 peers (vs H5AN8G8NCJR-PBC)
- Cross-brand second source at identical density and footprint (vs MT40A2G8AG-062E)
- Mainstream -PBC speed bin coverage (vs H5AN8G8NAFR-PBC)
Notas de projeto
DDR4 fly-by topology: route command/address/clock in a fly-by chain to each FBGA-78 package, terminating at VTT with 40-ohm-class resistors near the last device. Length-match each byte lane's data strobe to its data lines within skew budgets per the DDR4 board design guide. Keep VREFCA and VREFDQ planes quiet with local decoupling; VREFDQ for DRAM and controller should be generated separately to avoid coupling. This topology applies equally to H5ANAG8NBJR-PBC and its FBGA-78 drop-ins from Micron and Samsung.
Decouple each VDD and VDDQ ball pair with at least one 0.1 uF ceramic immediately adjacent to the package, plus bulk 10 uF per device on the 1.2 V rail. VPP (2.5 V) pumps the word-line drivers - keep its rail well regulated, as droop shows up as refresh-margin failures rather than immediate functional errors. Estimated: an 8-device DDR4 module can draw several amps of peak VDDQ current during simultaneous bank-group activation, so size the VRM and plane copper accordingly rather than using average-current numbers.
DDR4 DRAM dissipates heat primarily through the ball field into the PCB. Provide at least 4-6 thermal vias per package site to a solid internal ground/power plane, and consider aluminum module heat spreaders in server RDIMM designs. If operating above the standard refresh temperature threshold, the memory controller switches to higher refresh rates (2x/4x), which costs effective bandwidth; verify derating behavior in your controller firmware and confirm the device's exact operating-temperature range on the manufacturer datasheet for your specific die revision.
Informações de conformidade
Hynix family datasheet states Lead-Free & Halogen-Free (RoHS Compliant) for the H5AN-series DDR4 SDRAM. REACH SVHC status and conflict-minerals declarations not found in verified data.
