IRFZ34NPBF - 55V 29A N-Channel HEXFET MOSFET | Infineon
MPN: IRFZ34NPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
Drop-in alternatives for IRFZ34NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFZ34PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFZ24NPBF
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →IRFZ48NSTRLPBF
✅ Drop-In✓ In Stock
$1.18 / Unit
View Datasheet →IRFB4110PBF
✅ Drop-In✓ In Stock
$1.55 / Unit
View Datasheet →IRFP2907PBF
✅ Drop-In✓ In Stock
$2.45 / Unit
View Datasheet →NTP30N06
✅ Drop-In📋 Reference alternative (not in catalog)
STP55NF06L
✅ Drop-In📋 Reference alternative (not in catalog)
IRFZ34NPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active |
| FET Type | N-Channel, Enhancement Mode |
| Technology | HEXFET (Planar DMOS, 5th generation) |
| Drain-Source Voltage (V_DSS) | 55 V |
| Continuous Drain Current (I_D) at Tc=25C | 29 A |
| Power Dissipation (P_D) at Tc=25C | 68 W |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm |
| Gate Charge (Q_g) typ | 22.7 nC |
| Operating Temperature Range | -55 C to +175 C |
| Maximum Junction Temperature | 175 C |
| Package | TO-220AB (3-pin + tab, through-hole) |
| Mounting Type | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) |
| Qualification | JEDEC standard |
| RoHS Status | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) |
IRFZ34NPBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Drain — Drain terminal; electrically common with the metal mounting tab |
| Pin 3 | Source — Source terminal; reference for gate drive and load return |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IRFZ34NPBF is suitable for 8 applications: 24V Brushed DC Motor Drive, Low-Side Switch for Solenoid and Relay Drivers, Switched-Mode Power Supply (SMPS) Primary Switch, Uninterruptible Power Supply (UPS) Battery Switch, Automotive 12V Load Switch, LED Driver Power Stage, Battery Management and Charging Systems, General-Purpose High-Current DC Switching.
24V Brushed DC Motor Drive
The IRFZ34NPBF is well-suited for low-frequency 24 V brushed DC motor drive half-bridge or low-side switch topologies. Its 55 V V_DSS provides safe headroom above a 24 V bus plus inductive spike transients, and 29 A continuous drain current covers most sub-100 W motor applications. The 40 mOhm R_DS(on) at 10 V V_GS keeps conduction loss manageable at duty cycles below 80%. Switching below 100 kHz, the part is in its efficient operating regime; place it on the low-side with a Schottky or fast-recovery flyback diode across the motor inductance. Conduction loss P_cond = I_D^2 x R_DS(on) = 29^2 x 0.040 = 33.9 W at full load, so a clip-on heatsink is mandatory.
Recommended
Low-Side Switch for Solenoid and Relay Drivers
Industrial solenoid and relay coils demand a rugged low-side switch capable of absorbing inductive kickback. The IRFZ34NPBF's planar HEXFET cell structure provides wide safe-operating-area (SOA) and improved repetitive-avalanche ruggedness, both essential when an unclamped inductive load is switched. Mount the part on a TO-220 clip-on heatsink; tie the tab to drain and ensure the heatsink is electrically isolated if the drain is not at ground potential. A flyback diode or TVS across the coil is recommended, but if absent the MOSFET's avalanche rating absorbs the energy. The 68 W power dissipation rating and 175 C junction temperature give substantial thermal margin.
Recommended
Switched-Mode Power Supply (SMPS) Primary Switch
The IRFZ34NPBF is widely used as the primary-side switch in low-to-medium power isolated SMPS operating below 100 kHz, particularly in 12 V / 24 V input flyback and forward converters. The 55 V V_DSS comfortably covers 24 V rectified input plus leakage spike margin, and 29 A continuous current supports converters up to approximately 150 W. The 22.7 nC typical gate charge allows economical gate-drive design with a simple bipolar or MOSFET driver IC; the part is optimized for frequencies up to about 50 kHz, beyond which switching loss begins to dominate. Snubber design across the primary winding is mandatory to keep V_DS peaks below 80% of the 55 V rating.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
In a UPS, the IRFZ34NPBF can serve as a low-side disconnect switch between the battery and the inverter bus. Its 40 mOhm R_DS(on) keeps conduction loss low even at the 20-25 A discharge currents typical of 1 kVA UPS systems. The 55 V V_DSS accommodates 24 V battery stacks plus transient spikes. Use a gate-drive circuit that pulls V_GS high to 12 V for full enhancement, and place a TVS or Zener clamp from gate to source to protect against transient gate over-voltage during load-step events. The through-hole TO-220AB package allows easy PCB mounting and clip-on heatsinking.
Recommended
Automotive 12V Load Switch
The IRFZ34NPBF can be used as a 12 V automotive body-electronics load switch for lamps, motors, and heater loads. With 55 V V_DSS it tolerates 12 V bus plus load-dump transients up to 35 V, and 29 A continuous current covers most accessory loads. The planar process gives repetitive-avalanche ruggedness needed when switching inductive loads without an external freewheel diode. Note that this part is not AEC-Q101 qualified; for automotive designs requiring formal qualification, use an automotive-grade equivalent such as the IRFZ34NSPBF or Infineon AUIRFZ34N. Drive the gate through a dedicated gate-driver or BJT pre-driver to ensure fast turn-off.
Recommended
LED Driver Power Stage
The IRFZ34NPBF serves as the main switching element in constant-current LED drivers for architectural and industrial lighting. Its 55 V V_DSS covers 24 V and 48 V LED strings, and 29 A current drives multi-amp LED arrays. The 40 mOhm R_DS(on) keeps conduction loss below 5% at typical operating currents of 5-10 A, and the HEXFET planar cell structure supports PWM dimming at frequencies up to several kHz. Mount the device on a small aluminum PCB or clip-on heatsink; place a gate resistor of 10-100 ohm to control switching speed and EMI. A gate-driver IC like the IRS4428STRPBF or IR21064STRPBF provides the sharp gate transitions needed for high-frequency PWM operation.
Recommended
Battery Management and Charging Systems
In lead-acid or lithium battery charging systems, the IRFZ34NPBF can function as a low-side switching element in buck or synchronous-rectifier topologies. The 55 V V_DSS handles 24 V battery stacks plus transient over-voltage, and the 40 mOhm R_DS(on) minimizes conduction loss during high-current charging. The HEXFET planar process is well-suited to switching frequencies of 50-100 kHz typical of ICR battery chargers. Use a dedicated gate-driver such as the IR2101 or IR2104 to switch the gate cleanly; pair with a current-sense resistor and op-amp for closed-loop current regulation. Through-hole TO-220AB packaging simplifies hand-soldered prototyping and field-serviceable designs.
Recommended
General-Purpose High-Current DC Switching
Beyond the specific applications above, the IRFZ34NPBF is a general-purpose workhorse for any through-hole 55 V / 29 A switching task. Typical use cases include ham-radio antenna tuning networks, audio amplifier output stages (Class D), solar charge controller low-side switches, and hobby robotics motor drivers. The TO-220AB form factor is breadboard-friendly and compatible with standard clip-on heatsinks, TO-220 isolation pads, and PCB-mount heatsink assemblies. Designers benefit from the part's wide availability across multiple distributors, simple 10 V gate drive requirement, and predictable planar-cell switching behavior below 100 kHz.
Recommended
Recommended Products Summary
Engineering reference data for IRFZ34NPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFZ34PBF | IRFZ24NPBF | IRFZ48NSTRLPBF | IRFB4110PBF | NTP30N06 | STP55NF06L |
|---|---|---|---|---|---|---|---|
| Package | TO-220AB (through-hole) | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| V_DSS (V) | 55 | 55 | 55 | 55 | 100 | 60 | 60 |
| I_D continuous (A) | 29 | 29 | 17 | 64 | 120 | 30 | 50 |
| R_DS(on) max at 10V (mOhm) | 40 | 50 | 70 | 14 | 4.5 | 38 | 20 |
| P_D (W) | 68 | 68 | 45 | 94 | 370 | 78 | 100 |
| Technology / Generation | HEXFET 5th gen (planar) | HEXFET 3rd gen (planar) | HEXFET 5th gen (planar) | HEXFET 5th gen (planar) | HEXFET 7th gen | Trench MOSFET | STripFET (trench), logic-level |
| Logic-Level Gate Drive (V_GS(th) < 2.5V) | No | No | No | No | No | No | Yes |
Key Differentiators
- Fifth-generation HEXFET planar cell with optimized low RDS(on) (vs IRFZ34PBF (third-generation))
- Higher continuous drain current in same TO-220AB package (vs IRFZ24NPBF)
- Mature, broadly-distributed part with extensive application heritage (vs NTP30N06 (onsemi cross-brand))
Design Notes
Estimated: at I_D = 20 A and R_DS(on) = 40 mOhm, conduction loss is approximately 16 W. The TO-220AB junction-to-case thermal resistance is about 2.2 C/W, so junction temperature rises roughly 35 C above case at this load. To keep Tj below 150 C with 25 C ambient, the case-to-ambient thermal resistance must be below (150-25-35)/16 = 5.6 C/W, which requires a clip-on heatsink of at least 5 C/W or copper-PCB area of about 15 cm^2. Always mount with thermal compound and consider a TO-220 silicone insulation pad if the heatsink is not at drain potential.
Keep the gate-drive loop area small to minimize parasitic inductance that causes ringing and possible MOSFET avalanche. Place the gate resistor (10-100 ohm typical) directly at the gate pin, and route the gate return (source) directly back to the driver IC ground. For switching above 50 kHz, add a 10 kohm pull-down resistor from gate to source to ensure the device stays off during driver start-up. Place a local TVS or Zener (12-15 V) from gate to source if the gate-drive circuit has any risk of over-voltage transients.
Do not exceed V_GS = +/-20 V absolute maximum - the thin gate oxide can be permanently damaged. Do not assume the metal tab is electrically isolated - the tab is internally connected to the drain, so the heatsink must be isolated with a silicone pad and plastic shoulder washer if the heatsink is not at drain potential. Do not use the part above its SOA curve at high V_DS and high I_D simultaneously; consult the datasheet SOA graph for your switching frequency. Finally, do not assume 29 A is achievable without substantial heatsinking - the part will thermally limit far below rated current in free air.
For through-hole TO-220AB mounting, use 1.6 mm or 2.0 mm FR-4 PCB with 2 oz copper on the drain tab land pattern to maximize heat spreading. Drill hole diameter of approximately 1.1 mm for the three leads; allow at least 5 mm of copper pour around the tab for heat conduction. If the design must also survive vibration, use a TO-220 clip with a screw-and-spring arrangement rather than relying solely on the leads for mechanical retention.
At switching edges above 50 kHz, the high dv/dt (typically 5-10 V/ns) and di/dt of the IRFZ34NPBF can couple into adjacent traces through parasitic capacitance. Keep the drain-node copper area small to reduce radiated EMI, and use a snubber (RC or RCD) across the primary winding or load if ringing exceeds the 55 V V_DSS rating. Add a small ferrite bead in series with the gate if oscillation is observed on the gate waveform during turn-off.
Compliance Information
Pb-free per NPBF suffix; RoHS compliant per distributor catalog data. Not AEC-Q100 qualified; for automotive applications use AUIRFZ34N or an equivalent AEC-Q101 part. JEDEC qualified per datasheet.
