IRF7205TRPBF - P-Ch -30V -4.6A 70mΩ SO-8 MOSFET | Infineon
N.º da peça: IRF7205TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.55 | $0,55 |
| 10 | $0.48 | $4,80 |
| 100 | $0.36 | $36,00 |
| 500 | $0.27 | $135,00 |
| 1.000 | $0.22 | $220,00 |
| 3.000 | $0.18 | $540,00 |
IRF7205TRPBF Visão geral
A power MOSFET (metal-oxide-semiconductor field-effect transistor) is a voltage-controlled switching device that regulates power flow between drain and source terminals via an insulated gate. The IRF7205TRPBF belongs to the P-channel enhancement-mode sub-family, meaning the device is normally OFF at VGS = 0 and turns ON when a sufficiently negative gate-source voltage is applied (typically -10 V for full enhancement). Within the broader taxonomy, this part sits in: power MOSFET -> enhancement-mode P-channel MOSFET -> HEXFET -> surface-mount discrete semiconductor.
Key differentiating features include an advanced IR MOSFET process technology, ultra-low on-resistance per silicon area, dynamic dv/dt rating, fast switching capability, lead-free plating, and an ultra-low threshold-gate charge of 27 nC (Qg) that minimizes driver losses. The 8-SO (SOIC-8) package provides a low thermal resistance path with copper-pad heatsinking on the PCB.
The fourth-generation HEXFET cell structure uses a vertical DMOS architecture with a deep-body source short and a refined trench-style gate that achieves the lowest on-resistance per unit silicon area in the -30 V P-channel class. The 27 nC Qg specification enables switching frequencies well above 1 MHz when driven by a standard CMOS gate driver.
Typical applications include high-side load switches, DC-DC synchronous-rectifier replacements, battery protection and reverse-polarity blocking in portable equipment, and motor-drive half-bridges in industrial automation. The -30 V rating suits 12 V automotive rails and 24 V industrial supply systems with adequate transient margin.
A critical design consideration is that the SO-8 package has limited continuous current capacity above approximately 2 A without substantial copper-pad heatsinking; for 4.6 A operation, the PCB pad must be designed as a thermal land with thermal vias to inner-plane copper.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
Alternativas drop-in para IRF7205TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRF7205TRPBF (mesmo formato e footprint) — diferindo em Technology, Operating Temperature Range, Package, Lead-Free / RoHS, Mounting Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRF7205PBF
✅ Drop-In✓ Em estoque
$0.47 / unidade
Ver ficha técnica →IRF7207TRPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7319TRPBF
✅ Drop-In✓ Em estoque
$0.62 / unidade
Ver ficha técnica →Si2309DS
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AO3401A
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
BSL207SPH6327XTSA1
✅ Drop-In✓ Em estoque
$0.33 / unidade
Ver ficha técnica →IRF7205TRPBF Classificações máximas e características elétricas
| FET Type | P-Channel MOSFET |
| Technology | IR HEXFET (4th generation) |
| Drain-to-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) at TA=25°C | -4.6 A |
| On-Resistance RDS(on) max @ VGS=-10V | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | 130 mΩ |
| Gate Threshold Voltage VGS(th) | -1.0 V to -3.0 V |
| Total Gate Charge Qg | 27 nC |
| Dissipação de potência (TC=25°C) | 2.5 W |
| Temperatura de junção de operação | -55 °C to +150 °C |
| Encapsulamento | SO-8 (8-SO) |
| Tipo de montagem | Surface Mount |
| RoHS / Lead-Free | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | Tape & Reel (TR suffix) |
Configuração de pinos do IRF7205TRPBF
| Pino 1 | Source — Source terminal (P-channel) |
| Pino 2 | Source — Source terminal (P-channel) |
| Pino 3 | Source — Source terminal (P-channel) |
| Pino 4 | Gate — Gate control input (drive negative to turn on) |
| Pino 5 | Drain — Drain terminal (P-channel), thermally connected to pads |
| Pino 6 | Drain — Drain terminal (P-channel), thermally connected to pads |
| Pino 7 | Drain — Drain terminal (P-channel), thermally connected to pads |
| Pino 8 | Drain — Drain terminal (P-channel), thermally connected to pads |
Área de Operação Segura (DC, TC=25°C)
Aplicações típicas
IRF7205TRPBF é adequado para 6 aplicaçãos: 12V Automotive High-Side Load Switch, Battery Protection / Reverse-Polarity Blocking, DC-DC Synchronous Rectifier Replacement, Industrial 24V Power-Rail Switching, USB Power Switch / Hot-Plug Controller, Motor-Drive Half-Bridge Stage.
12V Automotive High-Side Load Switch
The IRF7205TRPBF is a strong fit for 12V automotive high-side load switching where its -30V VDS rating provides margin above 12V nominal plus load-dump transients. With 70 mΩ Rds(on) at VGS=-10V and -4.6A continuous current capability, the device keeps conduction losses below 200 mW at 2 A continuous load, suiting it for driving automotive lamps, solenoids, and small motors where the P-channel topology eliminates the need for a bootstrap circuit and lets a low-side gate-driver MOSFET pull the IRF7205TRPBF gate to ground for turn-on.
Recomendado
Battery Protection / Reverse-Polarity Blocking
For battery protection and reverse-polarity blocking in portable and handheld equipment, the IRF7205TRPBF's P-channel enhancement-mode behavior is ideal because it conducts when the gate is pulled below ground by the load. The 70 mΩ Rds(on) minimizes voltage drop during discharge, while the -30V VDS protects against reversed-battery transients when a Schottky TVS clamps the surge. The SO-8 footprint enables compact PCB designs and the 27 nC total gate charge allows fast disconnect response (<1 μs) under battery-fault conditions.
Recomendado
DC-DC Synchronous Rectifier Replacement
The IRF7205TRPBF can replace the synchronous-rectifier MOSFET in low-power buck converters operating below 4A continuous output where P-channel high-side switching simplifies gate drive by eliminating the bootstrap network. Its 70 mΩ Rds(on) at -10V VGS keeps synchronous-rectifier conduction loss below 4% at 3A output, and the 27 nC Qg enables switching frequencies above 500 kHz with standard CMOS gate drivers. The SO-8 package's thermal pad supports sustained operation at 2-3A continuous when PCB copper pours are designed correctly.
Recomendado
Industrial 24V Power-Rail Switching
For industrial 24V power-rail switching and signal-line multiplexing, the IRF7205TRPBF's -30V VDS rating provides 25% headroom above the 24V nominal bus, withstanding inductive kickback from relays and solenoids on the load side. The P-channel high-side configuration lets a microcontroller I/O pin drive the gate directly through a pull-up resistor, eliminating the high-voltage gate-drive circuitry required by N-channel high-side switches. The 4.6A continuous capability covers most PLC output and sensor-power rail applications in industrial automation.
Recomendado
USB Power Switch / Hot-Plug Controller
The IRF7205TRPBF functions as a USB power-distribution switch where its P-channel high-side topology and -4.6A current capability comfortably exceed the USB 3.0 900 mA and USB-C 1.5 A specification limits. The 70 mΩ Rds(on) creates less than 100 mV drop at 1.5 A, well within USB voltage-tolerance specifications, and the fast-switching 27 nC Qg enables sub-microsecond turn-on that prevents inrush surges when downstream bulk capacitors charge. SO-8 surface-mount assembly suits compact hub designs.
Recomendado
Motor-Drive Half-Bridge Stage
In small DC-motor half-bridge and brushed-DC motor-driver stages for robotics and small appliances, the IRF7205TRPBF serves as the high-side switch in a complementary half-bridge with an N-channel low-side MOSFET. The -30V VDS rating handles 12V motor back-EMF transients, while 70 mΩ Rds(on) limits conduction loss during PWM commutation at duty cycles up to 95%. The 27 nC Qg supports PWM frequencies above 25 kHz, placing switching noise above the audible range for quiet motor operation.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRF7205TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRF7205PBF | IRF7207TRPBF | Si2309DS | AO3401A |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology | Alpha & Omega Semiconductor |
| Package | SO-8 (8-SO) | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same | SO-8 (8-SO) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage VDS | -30 V | -30 V | -30 V | -30 V | -30 V |
| Continuous Drain Current (TA=25°C) | -4.6 A | -4.6 A | -6.5 A | -3.6 A | -4.0 A |
| On-Resistance Rds(on) @ VGS=-10V | 70 mΩ | 70 mΩ | 60 mΩ | 52 mΩ | 50 mΩ |
| Power Dissipation (TC=25°C) | 2.5 W | 2.5 W | 2.5 W | 1.7 W | 1.4 W |
| Unit Price (qty 1, USD) | 0.55 | 0.55 | 0.65 | 0.40 | 0.18 |
Principais diferenciais
- Lowest cost per mΩ in the SO-8 -30V P-channel class (vs AO3401A)
- Industry-standard IR HEXFET fourth-generation process (vs Si2309DS)
- Higher continuous current than typical SO-8 P-channel parts (vs Si2309DS)
Notas de projeto
Estimated: at 4.6 A continuous and VGS=-10V drive, conduction loss is approximately 1.5 W (I² × R = 4.6² × 0.07 = 1.48 W). The SO-8 package's theta_JA is approximately 50 °C/W on a 1-square-inch copper pad, giving a junction temperature rise of 75 °C above ambient. Above 3 A continuous load, use a maximum copper-pad area of at least 1 square inch with thermal vias to inner planes; this is the most common design pitfall when migrating from D2PAK to SO-8.
Lay out the SO-8 footprint with a continuous thermal pad (Exposed Pad) under pins 5-6-7-8 connected to a copper pour of at least 1 square inch. Add 0.3 mm thermal vias in a 1.2 mm pitch grid stitching the top copper pour to the inner ground plane. The gate trace should be kept short (<10 mm) and routed away from switching drain traces to minimize dv/dt-induced gate bounce. Per Infineon's SO-8 layout application note, vias-in-pad are acceptable but require filled-and-plated-over via process to prevent solder wicking.
Do not exceed -20V VGS (the absolute-maximum gate-source voltage); use a 12V Zener clamp across gate-source if the gate-drive signal can overshoot. Do not parallel multiple IRF7205TRPBF devices without individual gate-source resistors because the negative-temperature-coefficient of Rds(on) at high currents can cause thermal runaway. Avoid operating at VDS > -24V for sustained periods to stay below 80% of the -30V rating and provide margin against automotive load-dump transients.
Informações de conformidade
Pb-free per PBF suffix, RoHS compliant per Infineon product page. Not AEC-Q100 qualified - automotive AEC-Q100 applications should consider AEC-Q100-qualified alternatives or perform additional qualification testing.
