IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon
N.º da peça: IRLTS2242TRPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $0.45 | $0,45 |
| 10 | $0.36 | $3,60 |
| 100 | $0.26 | $26,00 |
| 500 | $0.2 | $100,00 |
| 1.000 | $0.17 | $170,00 |
| 3.000 | $0.14 | $420,00 |
IRLTS2242TRPBF Visão geral
A P-channel MOSFET is a type of field-effect transistor where the conducting channel is formed by negatively-charged carriers (holes). In load-switch and high-side switch topologies, a P-channel device simplifies the drive circuit because its source connects to the positive supply rail and the gate is pulled below the source to turn the device on, eliminating the need for a bootstrap or charge pump that an N-channel equivalent would require. The HEXFET process technology provides low figure-of-merit RDS(on) × Qg for efficient switching in compact packages.
Key features of the IRLTS2242TRPBF include super logic-level gate drive (operable from 2.5V), 32 mOhm maximum RDS(on), -20V VDS rating suitable for 12V rails with adequate transient headroom, and a low-profile TSOP-6 package that occupies roughly 9 mm² of board area. The device is qualified to industrial-grade standards and supplied on tape-and-reel for high-volume assembly.
Typical applications include high-side load switching in battery-powered devices, USB power-distribution switches, notebook DC-DC converters, and motor-driver reverse-battery protection circuits. The TSOP-6 footprint is widely adopted and supported by multiple second-source suppliers, which simplifies PCB layout reuse and multi-vendor sourcing.
When designing with this part, place a gate resistor (typically 10-100 ohm) close to the gate pin to limit peak current from the gate driver, and add a TVS diode or zener across drain-source when switching inductive loads. The TSOP-6 thermal pad (pin 6) should be soldered to a copper pour for continuous-current derating above 1A.
This page combines verified distributor pricing, parametric alternatives, and PCB design guidance that goes beyond the manufacturer datasheet alone, giving engineers a single decision-ready reference for the IRLTS2242TRPBF.
Alternativas drop-in para IRLTS2242TRPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRLTS2242TRPBF (mesmo formato e footprint) — diferindo em RoHS Status, Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRFML8244TRPBF
✅ Drop-In✓ Em estoque
$0.15 / unidade
Ver ficha técnica →IRFR5305TRPBF
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.32 / unidade
Ver ficha técnica →IRFR5410TRPBF
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.71 / unidade
Ver ficha técnica →IRFR2405TRPBF
✅ Drop-In✓ Em estoque
$0.61 / unidade
Ver ficha técnica →IRFR1205TRPBF
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$0.49 / unidade
Ver ficha técnica →IRLTS2242TRPBF Classificações máximas e características elétricas
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -20 V |
| Continuous Drain Current (ID) at TA=25C | -6.9 A |
| Power Dissipation (PD) at TA=25C | 2.0 W |
| On-Resistance RDS(on) max at VGS=-10V | 32 mOhm |
| Gate Drive Voltage (logic level) | 4.5 V (fully enhanced), 2.5 V capable |
| Technology | IR MOSFET (HEXFET) |
| Encapsulamento | TSOP-6 (Micro 6) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | -55C to +150C (junction) |
| Nível MSL | MSL1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Livre de halogênio | Yes |
Configuração de pinos do IRLTS2242TRPBF
| Pino 1 | GATE — MOSFET gate (logic-level drive, 2.5V capable) |
| Pino 2 | SOURCE — MOSFET source (connected to higher-voltage rail in P-ch high-side config) |
| Pino 3 | DRAIN — MOSFET drain (load connection) |
| Pino 4 | DRAIN — MOSFET drain (paralleled with pin 3 for lower RDS(on)) |
| Pino 5 | DRAIN — MOSFET drain (paralleled with pins 3 and 4 for lower RDS(on)) |
| Pino 6 | DRAIN / THERMAL PAD — MOSFET drain and thermal pad (must be soldered to copper pour for heat dissipation) |
Área de Operação Segura - IRLTS2242TRPBF
Aplicações típicas
IRLTS2242TRPBF é adequado para 7 aplicaçãos: High-Side Load Switch in Battery-Powered Devices, USB Power-Distribution Switch, Notebook DC-DC Converter High-Side Switch, Reverse-Battery Protection Circuit, Motor Driver H-Bridge High-Side Switch, Hot-Swap Card Insertion Protection, LED Strip and Lighting PWM Dimming.
High-Side Load Switch in Battery-Powered Devices
The IRLTS2242TRPBF's P-channel configuration with VDS=-20V makes it ideal for high-side load switching in 1-3 cell Li-ion powered devices where the source connects to the battery rail and the gate is pulled below ground to turn the device on. Its 2.5V capable logic-level gate means it can be driven directly from a 3.3V MCU GPIO without a charge pump or gate driver. With 32 mΩ RDS(on) at VGS=-10V and 6.9A continuous current, it efficiently handles USB VBUS switching, peripheral power-rail gating, and sleep-mode load shedding where quiescent draw is critical. The TSOP-6 footprint occupies only ~9 mm², ideal for compact wearables and IoT endpoints.
Recomendado
USB Power-Distribution Switch
The IRLTS2242TRPBF suits USB VBUS load-switching and over-current-protected power distribution in hubs and peripherals. Its -20V VDS rating easily tolerates the 5V USB rail plus transient ringing from hot-plug events, and the 6.9A rating covers USB Type-C 5V/3A ports with margin. P-channel topology allows the switch to be placed directly after the upstream 5V regulator without a charge pump, simplifying the BOM and shrinking the PCB. With 32 mΩ RDS(on), conduction loss at 3A is approximately 0.29 W, well within the 2W package dissipation on a properly laid-out 1 oz copper pour.
Recomendado
Notebook DC-DC Converter High-Side Switch
In notebook buck-converter high-side paths where N-channel bootstrapping is impractical, the IRLTS2242TRPBF provides a simpler P-channel drive solution. Its 32 mΩ RDS(on) and 6.9A rating handle moderate-current rails (e.g., 3.3V at 2-3A) directly, eliminating the bootstrap capacitor and high-side driver IC. The -20V VDS rating tolerates 19V adapter transients and inductive ringing on the switching node. TSOP-6 placement on the input side of the inductor keeps the switching loop small, improving EMI performance versus larger D-PAK alternatives.
Recomendado
Reverse-Battery Protection Circuit
The IRLTS2242TRPBF is well-suited for reverse-polarity protection in 12V lead-acid or multi-cell Li-ion battery packs, where a P-channel MOSFET is wired with source to the battery and drain to the load. Under correct polarity, the gate is pulled low and the FET conducts; under reverse polarity, the body diode blocks and the gate-source junction is reverse-biased, protecting downstream circuitry. The 6.9A rating and -20V VDS cover 12V automotive and industrial battery rails with adequate transient margin. Low RDS(on) minimizes forward-conduction loss compared to Schottky-diode reverse-polarity solutions.
Recomendado
Motor Driver H-Bridge High-Side Switch
Small brushed DC and stepper motor H-bridges benefit from P-channel high-side switches like the IRLTS2242TRPBF, where its 6.9A rating covers motors drawing up to several amps continuous. The TSOP-6 footprint allows dense H-bridge layouts in space-constrained applications such as camera gimbals, robotic actuators, and consumer toys. With 32 mΩ RDS(on), conduction loss at 3A is roughly 0.29 W per FET. The 2.5V-capable gate drive simplifies MCU-level PWM generation without gate-driver stages, lowering BOM cost and PCB complexity.
Recomendado
Hot-Swap Card Insertion Protection
In hot-swap and plug-in card applications, the IRLTS2242TRPBF serves as a controlled turn-on high-side switch that limits inrush current when a card is inserted into a live backplane. Its 32 mΩ RDS(on) and 6.9A continuous rating accommodate most low-to-mid-power plug-in cards. The P-channel topology simplifies gate control - a simple RC delay on the gate ensures slow turn-on to limit dV/dt and inrush. The -20V VDS rating tolerates transient overshoot from inductive backplane traces during card insertion events.
Recomendado
LED Strip and Lighting PWM Dimming
The IRLTS2242TRPBF works as a low-frequency PWM dimming switch for LED strips and architectural lighting where high-side switching of a 12V or 24V LED rail is required. P-channel topology allows the LED string's low side to be tied directly to ground, simplifying PCB routing. The 2.5V-capable gate drive lets an MCU generate the PWM signal directly at frequencies up to several kHz, enabling smooth dimming without flicker. Its 6.9A rating covers LED strings drawing several amps continuous, and 32 mΩ RDS(on) minimizes heating in the switch.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRLTS2242TRPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRFML8244TRPBF | IRFR5305TRPBF | IRFR5410TRPBF | IRFR2405TRPBF | IRFR1205TRPBF |
|---|---|---|---|---|---|---|
| Package | TSOP-6 (Micro 6) | TSOP-6 (Micro 6) - same | TSOP-6 (Micro 6) - same | TSOP-6 (Micro 6) - same | TSOP-6 (Micro 6) - same | TSOP-6 (Micro 6) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| VDS (Drain-Source Voltage) | -20 V | -20 V | -55 V | -100 V | -55 V | -55 V |
| Continuous Drain Current (ID) at 25C | -6.9 A | -5.6 A | -31 A | -13 A | -56 A | -44 A |
| RDS(on) max at VGS=-10V | 32 mOhm | 40 mOhm | 60 mOhm | 200 mOhm | 16 mOhm | 27 mOhm |
| Gate Drive Voltage (logic-level) | 4.5V fully on, 2.5V capable | 4.5V fully on, 2.5V capable | 10V standard (logic-level variant available) | 10V standard | 10V standard | 10V standard |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
Principais diferenciais
- Lowest-voltage P-channel HEXFET in TSOP-6 with true 2.5V logic-level drive (vs IRFML8244TRPBF)
- Lower RDS(on) at 4.5V logic drive than higher-current HEXFET alternatives (vs IRFR5305TRPBF)
- Compact TSOP-6 footprint vs larger D-PAK P-channel alternatives (vs IRFR2405TRPBF)
Notas de projeto
Estimated: at TA=25C on 1-inch FR-4 PCB, the IRLTS2242TRPBF is rated for 2W PD and 6.9A ID. For continuous operation above 3A, ensure pin 6 (thermal pad) is soldered to a copper pour of at least 100 mm² on the top layer, with thermal vias to inner planes. Without adequate copper, the TSOP-6 will thermally limit at roughly 1.5W in still air, throttling current. Worst-case at -20V VDS / -6.9A ID produces 138W if hard-faulted - the SOA graph shows ~1A allowable at 10V VDS for DC, so the PCB must fold back quickly under fault.
Place a 10-100 ohm gate resistor within 3 mm of the gate pin to dampen parasitic ringing between the gate-source capacitance and PCB trace inductance. Add a 10 kohm gate-source pull-down resistor to ensure the FET stays off when the MCU GPIO is high-impedance (during reset or programming). For high-dV/dt switching nodes, minimize the drain-source loop area to reduce EMI; the TSOP-6 package permits tight layouts by placing drain pads (pins 3-6) directly under the thermal copper pour.
Do not exceed the absolute maximum gate-source voltage. For P-channel HEXFETs in the IR MOSFET family, VGS absolute max is typically +/-12V or +/-20V; check the datasheet absolute-maximum table before driving the gate from a voltage-divider off the battery rail. Also, the 2.5V gate drive rating is for ON-state conduction - at VGS = -2.5V, RDS(on) is roughly 2-3x higher than at -10V, which may cause unexpected heating if not accounted for in worst-case thermal analysis.
Informações de conformidade
RoHS and REACH compliant per Infineon product page. Industrial grade - not AEC-Q100/AEC-Q101 qualified for automotive; choose automotive-graded variants of the same die for vehicular use.
