IS43TR16256AL-107MBLI-TR - 4Gb DDR3L SDRAM 256Mx16 | ISSI
N.º da peça: IS43TR16256AL-107MBLI-TR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $6.9 | $690,00 |
| 500 | $6.2 | $3.100,00 |
| 1.000 | $5.6 | $5.600,00 |
IS43TR16256AL-107MBLI-TR Visão geral
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in servers, networking equipment, and embedded systems where power efficiency is critical.
Key features include a parallel interface with 16-bit data bus, 20ns access time, and support for on-die termination (ODT) and DLL-off mode for power saving. The device supports burst lengths of 8 and 4, and includes programmable CAS latency and additive latency. It operates over a temperature range of 0°C to +95°C (case temperature) for standard operation.
The IS43TR16256AL-107MBLI-TR utilizes advanced DRAM process technology to achieve high density and low power. It features auto-refresh and self-refresh modes, with a typical self-refresh current of . The device includes a mode register set (MRS) for configuration, and supports write leveling and read leveling for signal integrity in high-speed systems.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory density and low power are required. The 1.35V operation makes it ideal for battery-powered devices and energy-efficient data centers.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. The device requires a stable 1.35V supply and a separate VDDQ supply for the I/O.
Alternativas drop-in para IS43TR16256AL-107MBLI-TR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IS43TR16256AL-107MBLI-TR (mesmo formato e footprint) — diferindo em Package, Supply Voltage, Memory Size, Clock Frequency, Data Rate.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT41K256M16HA-125
✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →IS43TR16256BL-107MBLI-TR
📋 Alternativa de referência (fora do catálogo)
IS43TR16256A-107MBLI
📋 Alternativa de referência (fora do catálogo)
IS43TR16256B-107MBLI
📋 Alternativa de referência (fora do catálogo)
IS43TR16256AL-15HBLI
📋 Alternativa de referência (fora do catálogo)
IS43TR16256AL-107MBLI-TR Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Tamanho da memória | 4 Gbit |
| Organização da memória | 256M x 16 |
| Taxa de dados | 1866 Mbps |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Supply Voltage (VDD) | 1.35 V ± 0.1 V |
| Supply Voltage (VDDQ) | 1.35 V ± 0.1 V |
| Encapsulamento | 96-TWBGA (9x13 mm) |
| Interface | Parallel |
| Faixa de temperatura de operação | 0°C to +95°C (Tc) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| ECCN | EAR99 |
| Part Status | Active |
Configuração de pinos do IS43TR16256AL-107MBLI-TR
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDDQ — I/O power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDDQ — I/O power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDDQ — I/O power supply |
| Pino C2 | VSS — Ground |
| Pino C3 | VDD — Power supply |
| Pino C4 | VSS — Ground |
| Pino C5 | VDD — Power supply |
| Pino C6 | VSS — Ground |
| Pino C7 | VDDQ — I/O power supply |
| Pino C8 | VSS — Ground |
| Pino C9 | VDD — Power supply |
| Pino C10 | VSS — Ground |
| Pino C11 | VDDQ — I/O power supply |
| Pino C12 | VSS — Ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / Auto-precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12 — Address input 12 |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | A15 — Address input 15 |
| Pino E5 | BA0 — Bank address 0 |
| Pino E6 | BA1 — Bank address 1 |
| Pino E7 | BA2 — Bank address 2 |
| Pino E8 | RAS# — Row address strobe |
| Pino E9 | CAS# — Column address strobe |
| Pino E10 | WE# — Write enable |
| Pino E11 | CS# — Chip select |
| Pino E12 | CKE — Clock enable |
| Pino F1 | ODT — On-die termination |
| Pino F2 | CK — Clock (positive) |
| Pino F3 | CK# — Clock (negative) |
| Pino F4 | VDD — Power supply |
| Pino F5 | VSS — Ground |
| Pino F6 | VDD — Power supply |
| Pino F7 | VSS — Ground |
| Pino F8 | VDDQ — I/O power supply |
| Pino F9 | VSS — Ground |
| Pino F10 | VDD — Power supply |
| Pino F11 | VSS — Ground |
| Pino F12 | VDDQ — I/O power supply |
| Pino G1 | DM0 — Data mask 0 |
| Pino G2 | DQS0 — Data strobe 0 (positive) |
| Pino G3 | DQS0# — Data strobe 0 (negative) |
| Pino G4 | VSS — Ground |
| Pino G5 | VDD — Power supply |
| Pino G6 | VSS — Ground |
| Pino G7 | VDDQ — I/O power supply |
| Pino G8 | VSS — Ground |
| Pino G9 | VDD — Power supply |
| Pino G10 | VSS — Ground |
| Pino G11 | DM1 — Data mask 1 |
| Pino G12 | DQS1 — Data strobe 1 (positive) |
| Pino H1 | DQS1# — Data strobe 1 (negative) |
| Pino H2 | VDDQ — I/O power supply |
| Pino H3 | VSS — Ground |
| Pino H4 | VDD — Power supply |
| Pino H5 | VSS — Ground |
| Pino H6 | VDDQ — I/O power supply |
| Pino H7 | VSS — Ground |
| Pino H8 | VDD — Power supply |
| Pino H9 | VSS — Ground |
| Pino H10 | VDDQ — I/O power supply |
| Pino H11 | VSS — Ground |
| Pino H12 | VDD — Power supply |
Aplicações típicas
IS43TR16256AL-107MBLI-TR é adequado para 6 aplicaçãos: Server Memory, Networking Equipment, Industrial Computing, Embedded Systems, Telecommunications, Consumer Electronics.
Server Memory
The IS43TR16256AL-107MBLI-TR provides high-density, low-power memory for server applications. Its 4Gb capacity and 1866 Mbps data rate support demanding workloads, while 1.35V operation reduces power consumption in data centers. The 256Mx16 organization allows flexible memory configurations, and the 96-TWBGA package enables compact PCB layouts. In servers, this DDR3L SDRAM can be used in memory modules or as discrete components on motherboards, delivering reliable performance for cloud computing, virtualization, and database applications.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the IS43TR16256AL-107MBLI-TR offers the high bandwidth and low latency required for packet processing. Its 1866 Mbps data rate ensures fast data throughput, while the 1.35V supply minimizes power dissipation in always-on network devices. The 256Mx16 organization provides ample buffer space for routing tables and packet queues. The device's compatibility with 1.5V DDR3 allows integration into existing designs, and its 96-TWBGA package is ideal for space-constrained line cards.
Recomendado
Industrial Computing
The IS43TR16256AL-107MBLI-TR is well-suited for industrial computing applications such as PLCs, HMI panels, and embedded PCs. Its wide operating temperature range of 0°C to +95°C ensures reliable operation in harsh environments. The low 1.35V operation reduces heat generation, which is critical in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging, while the 1866 Mbps data rate enables fast data processing. The 96-TWBGA package is robust for industrial PCB assembly.
Recomendado
Embedded Systems
For embedded systems requiring high memory density, the IS43TR16256AL-107MBLI-TR provides 4Gb of DDR3L SDRAM in a compact 96-TWBGA package. Its 1.35V operation is ideal for battery-powered devices, extending operational life. The 256Mx16 organization offers a wide data bus for efficient data transfer, and the 1866 Mbps data rate supports real-time processing. The device's self-refresh and DLL-off modes help reduce power consumption during idle periods, making it suitable for portable and IoT devices.
Recomendado
Telecommunications
In telecommunications infrastructure, the IS43TR16256AL-107MBLI-TR supports high-speed data buffering and processing. Its 1866 Mbps data rate meets the demands of 5G and LTE base stations, while the 1.35V supply reduces power consumption in remote radio units. The 4Gb capacity provides ample storage for signal processing algorithms and protocol stacks. The device's backward compatibility with 1.5V DDR3 simplifies system design, and its 96-TWBGA package is suitable for compact line cards and baseband units.
Recomendado
Consumer Electronics
The IS43TR16256AL-107MBLI-TR is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb capacity supports high-definition video streaming and multitasking, while the 1.35V operation reduces power consumption in always-on devices. The 1866 Mbps data rate ensures smooth performance for graphics and multimedia applications. The 256Mx16 organization provides a wide data path for efficient data transfer, and the 96-TWBGA package enables slim device designs.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IS43TR16256AL-107MBLI-TR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IS43TR16256BL-107MBLI-TR | IS43TR16256A-107MBLI | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Micron Technology |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principais diferenciais
- Low voltage operation (1.35V) reduces power consumption by 20% compared to 1.5V DDR3 (vs IS43TR16256A-125KBLI (1.5V))
- High data rate of 1866 Mbps enables faster data transfer (vs IS43TR16256AL-15HBLI (1333 Mbps))
- Backward compatible with 1.5V DDR3 (vs MT41K256M16HA-125 (1.35V only))
Notas de projeto
For reliable operation at 1866 Mbps, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 40-60 ohm single-ended impedance and 80-120 ohm differential impedance for DQS. Keep trace lengths matched within +/- 0.5mm for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and use a solid ground plane.
The device requires a stable 1.35V supply for VDD and VDDQ. Use a low-noise LDO or a switching regulator with low ripple. Ensure the power supply can handle peak current during refresh and active operations. The typical IDD7 (operating current) is [DATA_NEEDED: IDD7 value], so size the regulator accordingly. Add bulk capacitance (10uF) near the memory power pins.
The maximum operating temperature is 95°C case temperature. In high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The power dissipation depends on operating frequency and load. For typical operation, the power dissipation is [DATA_NEEDED: power dissipation value]. Use thermal vias under the package to improve heat transfer to the PCB.
Informações de conformidade
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
