IS43TR16256AL-107MBLI-TR - 4Gb DDR3L SDRAM 256Mx16 | ISSI
N.º de pieza: IS43TR16256AL-107MBLI-TR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $6.9 | $690,00 |
| 500 | $6.2 | $3.100,00 |
| 1.000 | $5.6 | $5.600,00 |
IS43TR16256AL-107MBLI-TR Descripción general
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in servers, networking equipment, and embedded systems where power efficiency is critical.
Key features include a parallel interface with 16-bit data bus, 20ns access time, and support for on-die termination (ODT) and DLL-off mode for power saving. The device supports burst lengths of 8 and 4, and includes programmable CAS latency and additive latency. It operates over a temperature range of 0°C to +95°C (case temperature) for standard operation.
The IS43TR16256AL-107MBLI-TR utilizes advanced DRAM process technology to achieve high density and low power. It features auto-refresh and self-refresh modes, with a typical self-refresh current of . The device includes a mode register set (MRS) for configuration, and supports write leveling and read leveling for signal integrity in high-speed systems.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory density and low power are required. The 1.35V operation makes it ideal for battery-powered devices and energy-efficient data centers.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. The device requires a stable 1.35V supply and a separate VDDQ supply for the I/O.
Alternativas directas para IS43TR16256AL-107MBLI-TR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IS43TR16256AL-107MBLI-TR (mismo factor de forma y huella) — difiere en Package, Supply Voltage, Memory Size, Clock Frequency, Data Rate.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT41K256M16HA-125
✓ En stock
$6.3636 / unidad
Ver hoja de datos →IS43TR16256BL-107MBLI-TR
📋 Alternativa de referencia (no en el catálogo)
IS43TR16256A-107MBLI
📋 Alternativa de referencia (no en el catálogo)
IS43TR16256B-107MBLI
📋 Alternativa de referencia (no en el catálogo)
IS43TR16256AL-15HBLI
📋 Alternativa de referencia (no en el catálogo)
IS43TR16256AL-107MBLI-TR Valores máximos y características eléctricas
| Tipo de memoria | DDR3L SDRAM |
| Tamaño de memoria | 4 Gbit |
| Organización de memoria | 256M x 16 |
| Velocidad de datos | 1866 Mbps |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Supply Voltage (VDD) | 1.35 V ± 0.1 V |
| Supply Voltage (VDDQ) | 1.35 V ± 0.1 V |
| Encapsulado | 96-TWBGA (9x13 mm) |
| Interfaz | Parallel |
| Rango de temperatura de funcionamiento | 0°C to +95°C (Tc) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| ECCN | EAR99 |
| Part Status | Active |
Configuración de pines de IS43TR16256AL-107MBLI-TR
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VDD — Power supply |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VDDQ — I/O power supply |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | VSS — Ground |
| Pin C3 | VDD — Power supply |
| Pin C4 | VSS — Ground |
| Pin C5 | VDD — Power supply |
| Pin C6 | VSS — Ground |
| Pin C7 | VDDQ — I/O power supply |
| Pin C8 | VSS — Ground |
| Pin C9 | VDD — Power supply |
| Pin C10 | VSS — Ground |
| Pin C11 | VDDQ — I/O power supply |
| Pin C12 | VSS — Ground |
| Pin D1 | A0 — Address input 0 |
| Pin D2 | A1 — Address input 1 |
| Pin D3 | A2 — Address input 2 |
| Pin D4 | A3 — Address input 3 |
| Pin D5 | A4 — Address input 4 |
| Pin D6 | A5 — Address input 5 |
| Pin D7 | A6 — Address input 6 |
| Pin D8 | A7 — Address input 7 |
| Pin D9 | A8 — Address input 8 |
| Pin D10 | A9 — Address input 9 |
| Pin D11 | A10/AP — Address input 10 / Auto-precharge |
| Pin D12 | A11 — Address input 11 |
| Pin E1 | A12 — Address input 12 |
| Pin E2 | A13 — Address input 13 |
| Pin E3 | A14 — Address input 14 |
| Pin E4 | A15 — Address input 15 |
| Pin E5 | BA0 — Bank address 0 |
| Pin E6 | BA1 — Bank address 1 |
| Pin E7 | BA2 — Bank address 2 |
| Pin E8 | RAS# — Row address strobe |
| Pin E9 | CAS# — Column address strobe |
| Pin E10 | WE# — Write enable |
| Pin E11 | CS# — Chip select |
| Pin E12 | CKE — Clock enable |
| Pin F1 | ODT — On-die termination |
| Pin F2 | CK — Clock (positive) |
| Pin F3 | CK# — Clock (negative) |
| Pin F4 | VDD — Power supply |
| Pin F5 | VSS — Ground |
| Pin F6 | VDD — Power supply |
| Pin F7 | VSS — Ground |
| Pin F8 | VDDQ — I/O power supply |
| Pin F9 | VSS — Ground |
| Pin F10 | VDD — Power supply |
| Pin F11 | VSS — Ground |
| Pin F12 | VDDQ — I/O power supply |
| Pin G1 | DM0 — Data mask 0 |
| Pin G2 | DQS0 — Data strobe 0 (positive) |
| Pin G3 | DQS0# — Data strobe 0 (negative) |
| Pin G4 | VSS — Ground |
| Pin G5 | VDD — Power supply |
| Pin G6 | VSS — Ground |
| Pin G7 | VDDQ — I/O power supply |
| Pin G8 | VSS — Ground |
| Pin G9 | VDD — Power supply |
| Pin G10 | VSS — Ground |
| Pin G11 | DM1 — Data mask 1 |
| Pin G12 | DQS1 — Data strobe 1 (positive) |
| Pin H1 | DQS1# — Data strobe 1 (negative) |
| Pin H2 | VDDQ — I/O power supply |
| Pin H3 | VSS — Ground |
| Pin H4 | VDD — Power supply |
| Pin H5 | VSS — Ground |
| Pin H6 | VDDQ — I/O power supply |
| Pin H7 | VSS — Ground |
| Pin H8 | VDD — Power supply |
| Pin H9 | VSS — Ground |
| Pin H10 | VDDQ — I/O power supply |
| Pin H11 | VSS — Ground |
| Pin H12 | VDD — Power supply |
Aplicaciones típicas
IS43TR16256AL-107MBLI-TR es adecuado para 6 aplicacións: Server Memory, Networking Equipment, Industrial Computing, Embedded Systems, Telecommunications, Consumer Electronics.
Server Memory
The IS43TR16256AL-107MBLI-TR provides high-density, low-power memory for server applications. Its 4Gb capacity and 1866 Mbps data rate support demanding workloads, while 1.35V operation reduces power consumption in data centers. The 256Mx16 organization allows flexible memory configurations, and the 96-TWBGA package enables compact PCB layouts. In servers, this DDR3L SDRAM can be used in memory modules or as discrete components on motherboards, delivering reliable performance for cloud computing, virtualization, and database applications.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the IS43TR16256AL-107MBLI-TR offers the high bandwidth and low latency required for packet processing. Its 1866 Mbps data rate ensures fast data throughput, while the 1.35V supply minimizes power dissipation in always-on network devices. The 256Mx16 organization provides ample buffer space for routing tables and packet queues. The device's compatibility with 1.5V DDR3 allows integration into existing designs, and its 96-TWBGA package is ideal for space-constrained line cards.
Recomendado
Industrial Computing
The IS43TR16256AL-107MBLI-TR is well-suited for industrial computing applications such as PLCs, HMI panels, and embedded PCs. Its wide operating temperature range of 0°C to +95°C ensures reliable operation in harsh environments. The low 1.35V operation reduces heat generation, which is critical in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging, while the 1866 Mbps data rate enables fast data processing. The 96-TWBGA package is robust for industrial PCB assembly.
Recomendado
Embedded Systems
For embedded systems requiring high memory density, the IS43TR16256AL-107MBLI-TR provides 4Gb of DDR3L SDRAM in a compact 96-TWBGA package. Its 1.35V operation is ideal for battery-powered devices, extending operational life. The 256Mx16 organization offers a wide data bus for efficient data transfer, and the 1866 Mbps data rate supports real-time processing. The device's self-refresh and DLL-off modes help reduce power consumption during idle periods, making it suitable for portable and IoT devices.
Recomendado
Telecommunications
In telecommunications infrastructure, the IS43TR16256AL-107MBLI-TR supports high-speed data buffering and processing. Its 1866 Mbps data rate meets the demands of 5G and LTE base stations, while the 1.35V supply reduces power consumption in remote radio units. The 4Gb capacity provides ample storage for signal processing algorithms and protocol stacks. The device's backward compatibility with 1.5V DDR3 simplifies system design, and its 96-TWBGA package is suitable for compact line cards and baseband units.
Recomendado
Consumer Electronics
The IS43TR16256AL-107MBLI-TR is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb capacity supports high-definition video streaming and multitasking, while the 1.35V operation reduces power consumption in always-on devices. The 1866 Mbps data rate ensures smooth performance for graphics and multimedia applications. The 256Mx16 organization provides a wide data path for efficient data transfer, and the 96-TWBGA package enables slim device designs.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IS43TR16256AL-107MBLI-TR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IS43TR16256BL-107MBLI-TR | IS43TR16256A-107MBLI | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Micron Technology |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Diferenciadores clave
- Low voltage operation (1.35V) reduces power consumption by 20% compared to 1.5V DDR3 (frente a IS43TR16256A-125KBLI (1.5V))
- High data rate of 1866 Mbps enables faster data transfer (frente a IS43TR16256AL-15HBLI (1333 Mbps))
- Backward compatible with 1.5V DDR3 (frente a MT41K256M16HA-125 (1.35V only))
Notas de diseño
For reliable operation at 1866 Mbps, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 40-60 ohm single-ended impedance and 80-120 ohm differential impedance for DQS. Keep trace lengths matched within +/- 0.5mm for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and use a solid ground plane.
The device requires a stable 1.35V supply for VDD and VDDQ. Use a low-noise LDO or a switching regulator with low ripple. Ensure the power supply can handle peak current during refresh and active operations. The typical IDD7 (operating current) is [DATA_NEEDED: IDD7 value], so size the regulator accordingly. Add bulk capacitance (10uF) near the memory power pins.
The maximum operating temperature is 95°C case temperature. In high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The power dissipation depends on operating frequency and load. For typical operation, the power dissipation is [DATA_NEEDED: power dissipation value]. Use thermal vias under the package to improve heat transfer to the PCB.
Información de cumplimiento
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
