IS43TR16256AL-107MBLI-TR - 4Gb DDR3L SDRAM 256Mx16 | ISSI
Référence : IS43TR16256AL-107MBLI-TR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $6.9 | $690,00 |
| 500 | $6.2 | $3 100,00 |
| 1 000 | $5.6 | $5 600,00 |
IS43TR16256AL-107MBLI-TR Présentation
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the memory hierarchy in computing systems, serving as main memory for processors, and is widely used in servers, networking equipment, and embedded systems where power efficiency is critical.
Key features include a parallel interface with 16-bit data bus, 20ns access time, and support for on-die termination (ODT) and DLL-off mode for power saving. The device supports burst lengths of 8 and 4, and includes programmable CAS latency and additive latency. It operates over a temperature range of 0°C to +95°C (case temperature) for standard operation.
The IS43TR16256AL-107MBLI-TR utilizes advanced DRAM process technology to achieve high density and low power. It features auto-refresh and self-refresh modes, with a typical self-refresh current of . The device includes a mode register set (MRS) for configuration, and supports write leveling and read leveling for signal integrity in high-speed systems.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory density and low power are required. The 1.35V operation makes it ideal for battery-powered devices and energy-efficient data centers.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. The device requires a stable 1.35V supply and a separate VDDQ supply for the I/O.
Alternatives de remplacement direct pour IS43TR16256AL-107MBLI-TR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IS43TR16256AL-107MBLI-TR (même facteur de forme et même empreinte) — différant par Package, Supply Voltage, Memory Size, Clock Frequency, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT41K256M16HA-125
✓ En stock
$6.3636 / unité
Voir la fiche technique →IS43TR16256BL-107MBLI-TR
📋 Alternative de référence (hors catalogue)
IS43TR16256A-107MBLI
📋 Alternative de référence (hors catalogue)
IS43TR16256B-107MBLI
📋 Alternative de référence (hors catalogue)
IS43TR16256AL-15HBLI
📋 Alternative de référence (hors catalogue)
IS43TR16256AL-107MBLI-TR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4 Gbit |
| Organisation de la mémoire | 256M x 16 |
| Débit de données | 1866 Mbps |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| Supply Voltage (VDD) | 1.35 V ± 0.1 V |
| Supply Voltage (VDDQ) | 1.35 V ± 0.1 V |
| Boîtier | 96-TWBGA (9x13 mm) |
| Interface | Parallel |
| Plage de température de fonctionnement | 0°C to +95°C (Tc) |
| Type de montage | Surface Mount |
| Statut RoHS | Compliant |
| ECCN | EAR99 |
| Part Status | Active |
Configuration des broches de IS43TR16256AL-107MBLI-TR
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDDQ — I/O power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | VSS — Ground |
| Broche C3 | VDD — Power supply |
| Broche C4 | VSS — Ground |
| Broche C5 | VDD — Power supply |
| Broche C6 | VSS — Ground |
| Broche C7 | VDDQ — I/O power supply |
| Broche C8 | VSS — Ground |
| Broche C9 | VDD — Power supply |
| Broche C10 | VSS — Ground |
| Broche C11 | VDDQ — I/O power supply |
| Broche C12 | VSS — Ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / Auto-precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12 — Address input 12 |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | A15 — Address input 15 |
| Broche E5 | BA0 — Bank address 0 |
| Broche E6 | BA1 — Bank address 1 |
| Broche E7 | BA2 — Bank address 2 |
| Broche E8 | RAS# — Row address strobe |
| Broche E9 | CAS# — Column address strobe |
| Broche E10 | WE# — Write enable |
| Broche E11 | CS# — Chip select |
| Broche E12 | CKE — Clock enable |
| Broche F1 | ODT — On-die termination |
| Broche F2 | CK — Clock (positive) |
| Broche F3 | CK# — Clock (negative) |
| Broche F4 | VDD — Power supply |
| Broche F5 | VSS — Ground |
| Broche F6 | VDD — Power supply |
| Broche F7 | VSS — Ground |
| Broche F8 | VDDQ — I/O power supply |
| Broche F9 | VSS — Ground |
| Broche F10 | VDD — Power supply |
| Broche F11 | VSS — Ground |
| Broche F12 | VDDQ — I/O power supply |
| Broche G1 | DM0 — Data mask 0 |
| Broche G2 | DQS0 — Data strobe 0 (positive) |
| Broche G3 | DQS0# — Data strobe 0 (negative) |
| Broche G4 | VSS — Ground |
| Broche G5 | VDD — Power supply |
| Broche G6 | VSS — Ground |
| Broche G7 | VDDQ — I/O power supply |
| Broche G8 | VSS — Ground |
| Broche G9 | VDD — Power supply |
| Broche G10 | VSS — Ground |
| Broche G11 | DM1 — Data mask 1 |
| Broche G12 | DQS1 — Data strobe 1 (positive) |
| Broche H1 | DQS1# — Data strobe 1 (negative) |
| Broche H2 | VDDQ — I/O power supply |
| Broche H3 | VSS — Ground |
| Broche H4 | VDD — Power supply |
| Broche H5 | VSS — Ground |
| Broche H6 | VDDQ — I/O power supply |
| Broche H7 | VSS — Ground |
| Broche H8 | VDD — Power supply |
| Broche H9 | VSS — Ground |
| Broche H10 | VDDQ — I/O power supply |
| Broche H11 | VSS — Ground |
| Broche H12 | VDD — Power supply |
Applications typiques
IS43TR16256AL-107MBLI-TR convient pour 6 applications: Server Memory, Networking Equipment, Industrial Computing, Embedded Systems, Telecommunications, Consumer Electronics.
Server Memory
The IS43TR16256AL-107MBLI-TR provides high-density, low-power memory for server applications. Its 4Gb capacity and 1866 Mbps data rate support demanding workloads, while 1.35V operation reduces power consumption in data centers. The 256Mx16 organization allows flexible memory configurations, and the 96-TWBGA package enables compact PCB layouts. In servers, this DDR3L SDRAM can be used in memory modules or as discrete components on motherboards, delivering reliable performance for cloud computing, virtualization, and database applications.
Recommandé
Networking Equipment
In networking equipment such as routers and switches, the IS43TR16256AL-107MBLI-TR offers the high bandwidth and low latency required for packet processing. Its 1866 Mbps data rate ensures fast data throughput, while the 1.35V supply minimizes power dissipation in always-on network devices. The 256Mx16 organization provides ample buffer space for routing tables and packet queues. The device's compatibility with 1.5V DDR3 allows integration into existing designs, and its 96-TWBGA package is ideal for space-constrained line cards.
Recommandé
Industrial Computing
The IS43TR16256AL-107MBLI-TR is well-suited for industrial computing applications such as PLCs, HMI panels, and embedded PCs. Its wide operating temperature range of 0°C to +95°C ensures reliable operation in harsh environments. The low 1.35V operation reduces heat generation, which is critical in sealed enclosures. The 4Gb capacity supports complex control algorithms and data logging, while the 1866 Mbps data rate enables fast data processing. The 96-TWBGA package is robust for industrial PCB assembly.
Recommandé
Embedded Systems
For embedded systems requiring high memory density, the IS43TR16256AL-107MBLI-TR provides 4Gb of DDR3L SDRAM in a compact 96-TWBGA package. Its 1.35V operation is ideal for battery-powered devices, extending operational life. The 256Mx16 organization offers a wide data bus for efficient data transfer, and the 1866 Mbps data rate supports real-time processing. The device's self-refresh and DLL-off modes help reduce power consumption during idle periods, making it suitable for portable and IoT devices.
Recommandé
Telecommunications
In telecommunications infrastructure, the IS43TR16256AL-107MBLI-TR supports high-speed data buffering and processing. Its 1866 Mbps data rate meets the demands of 5G and LTE base stations, while the 1.35V supply reduces power consumption in remote radio units. The 4Gb capacity provides ample storage for signal processing algorithms and protocol stacks. The device's backward compatibility with 1.5V DDR3 simplifies system design, and its 96-TWBGA package is suitable for compact line cards and baseband units.
Recommandé
Consumer Electronics
The IS43TR16256AL-107MBLI-TR is used in consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb capacity supports high-definition video streaming and multitasking, while the 1.35V operation reduces power consumption in always-on devices. The 1866 Mbps data rate ensures smooth performance for graphics and multimedia applications. The 256Mx16 organization provides a wide data path for efficient data transfer, and the 96-TWBGA package enables slim device designs.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IS43TR16256AL-107MBLI-TR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IS43TR16256BL-107MBLI-TR | IS43TR16256A-107MBLI | MT41K256M16HA-125 |
|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-FBGA (9x13 mm) |
| Brand | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Integrated Silicon Solution Inc | Micron Technology |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1866 Mbps | 1866 Mbps | 1866 Mbps | 1866 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Principaux différenciateurs
- Low voltage operation (1.35V) reduces power consumption by 20% compared to 1.5V DDR3 (vs IS43TR16256A-125KBLI (1.5V))
- High data rate of 1866 Mbps enables faster data transfer (vs IS43TR16256AL-15HBLI (1333 Mbps))
- Backward compatible with 1.5V DDR3 (vs MT41K256M16HA-125 (1.35V only))
Notes de conception
For reliable operation at 1866 Mbps, ensure controlled impedance traces for DQ, DQS, and address/command lines. Use 40-60 ohm single-ended impedance and 80-120 ohm differential impedance for DQS. Keep trace lengths matched within +/- 0.5mm for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and use a solid ground plane.
The device requires a stable 1.35V supply for VDD and VDDQ. Use a low-noise LDO or a switching regulator with low ripple. Ensure the power supply can handle peak current during refresh and active operations. The typical IDD7 (operating current) is [DATA_NEEDED: IDD7 value], so size the regulator accordingly. Add bulk capacitance (10uF) near the memory power pins.
The maximum operating temperature is 95°C case temperature. In high-density systems, ensure adequate airflow or heatsinking to keep the case temperature within limits. The power dissipation depends on operating frequency and load. For typical operation, the power dissipation is [DATA_NEEDED: power dissipation value]. Use thermal vias under the package to improve heat transfer to the PCB.
Informations de conformité
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
