K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
N.º da peça: K6X1008C2D-TF55 ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.95 | $29,50 |
| 100 | $2.75 | $275,00 |
| 500 | $2.5 | $1.250,00 |
| 1.000 | $2.35 | $2.350,00 |
K6X1008C2D-TF55 Visão geral
An asynchronous static random access memory (SRAM) is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit made of cross-coupled inverters. Unlike DRAM, SRAM requires no refresh cycles, and unlike synchronous memories such as SDRAM, it needs no clock: data is accessed whenever address and control signals (CE, OE, WE) are asserted. In the memory hierarchy, SRAM sits at the top for speed and simplicity, making it a staple in embedded systems, industrial controllers, and legacy 5 V buses.
Key features of the K6X1008C2D include the 55 ns address access time (tAA), a low operating current of 35 mA, and full CMOS technology delivering very low standby power. The byte-wide 128K x 8 organization maps directly onto 8-bit and 16-bit microprocessor external buses with simple glue logic.
The device is built on Samsung's advanced CMOS process, which keeps static power consumption minimal while maintaining fast, uniform access times across the full 4.5 V to 5.5 V industrial supply band. The REVERSE TSOP pinout (32-TSOP REVERSE) places pins in mirrored order versus standard TSOP, so footprint orientation must be checked during layout.
Typical applications include industrial PLC memory expansion, legacy networking equipment, telecom line cards, test instrumentation, and replacement/upgrades in service parts for 5 V embedded designs.
A key design consideration is supply tolerance: the part requires a regulated 5 V rail within 4.5 V to 5.5 V, so it cannot be dropped into 3.3 V systems without level shifting.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para K6X1008C2D-TF55 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K6X1008C2D-TF55 (mesmo formato e footprint) — diferindo em Package, RoHS Status, Memory Type, Memory Size, Organization.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K6X1008C2D-GF55
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K6X1008C2D-TF70
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
K6X1008C2D-TB55
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
M5M51008DVP-55HI
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K6X0808C1D-BF55
✅ Drop-In✓ Em estoque
$1.85 / unidade
Ver ficha técnica →K6X1008C2D-TF55 Classificações máximas e características elétricas
| Tipo de memória | SRAM - Asynchronous |
| Tamanho da memória | 1 Mbit |
| Organização da memória | 128K x 8 |
| Access Time (tAA) | 55 ns |
| Interface | Parallel |
| Supply Voltage (Vcc) | 4.5 V to 5.5 V |
| Operating Current | 35 mA |
| Technology | Low Power Full CMOS |
| Encapsulamento | 32-TSOP REVERSE |
| Tipo de montagem | Surface Mount |
| Speed Options | 55 ns, 70 ns |
| Memory Format | Volatile (SRAM) |
| Clock Frequency | N/A (asynchronous) |
| Status RoHS | RoHS: Yes (per distributor listing) |
Guia de Configuração de Pinos do K6X1008C2D-TF55 32-tsop reverse
Configuração de pinos para K6X1008C2D-TF55 (pacote 32-tsop reverse). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para K6X1008C2D-TF55.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
K6X1008C2D-TF55 é adequado para 6 aplicaçãos: Industrial PLC Memory Expansion, Legacy Telecom Line Cards, Test and Measurement Instrument Repair, Networking Equipment Service Parts, Battery-Backed Data Logging, Aerospace Ground Support & Legacy Avionics Maintenance.
Industrial PLC Memory Expansion
The K6X1008C2D-TF55 fits industrial programmable logic controllers that still run 5 V CPU boards with external parallel memory buses. Its 55 ns tAA keeps zero-wait-state access for 8-bit microprocessors clocked in the tens of MHz, and the 35 mA operating current stays within the budget of shared industrial 5 V rails. The byte-wide 128K x 8 organization maps one chip directly to a 1 Mbit parameter-table or ladder-logic storage region using only CE/OE/WE glue logic. Because the part is asynchronous, it needs no clock domain and simplifies EMC design in electrically noisy factory environments. When repairing legacy PLCs, the identical-footprint K6X1008C2D-GF55 variant allows drop-in substitution without PCB changes.
Recomendado
Legacy Telecom Line Cards
Telecom line cards designed in the 1990s commonly used 5 V asynchronous SRAM for call-state tables and firmware scratch memory, and the K6X1008C2D-TF55 matches those sockets exactly. The 4.5 V to 5.5 V supply band tolerates the voltage sag typical of backplane distribution, while 55 ns access time meets the timing of classic NPU/CPU chipsets on these cards. Full CMOS technology minimizes standby drain on always-powered rack equipment, an important thermal consideration when dozens of cards share one shelf. The 32-TSOP REVERSE package provides the compact surface-mount footprint these high-density cards require. Service organizations can keep racks alive by swapping in verified date-code stock or pin-compatible family variants.
Recomendado
Test and Measurement Instrument Repair
Bench multimeters, oscilloscope front-ends, and data loggers from the 5 V era store calibration constants and setup state in byte-wide SRAM, and the K6X1008C2D-TF55 is a common OEM choice. Its deterministic asynchronous timing means calibration routines written decades ago behave identically after replacement, with no controller or driver changes. The 35 mA operating current and CMOS standby suit battery-backed memory domains where a supercapacitor or lithium cell preserves contents during power-off. When refurbishing instruments, engineers should verify the REVERSE TSOP orientation against the original footprint, since standard and reverse pinout variants of 32-pin TSOP SRAMs were both used in this industry. Stocking 70 ns TF70 units as spares adds timing margin at identical footprint.
Recomendado
Networking Equipment Service Parts
Routers, switches, and CSU/DSU units from the 5 V generation used 1 Mbit asynchronous SRAM for routing tables and buffers, making the K6X1008C2D-TF55 a standard service replacement. The 55 ns access time supports the memory-cycle timing of legacy Motorola and Intel bus microprocessors common in that equipment, and the parallel interface requires no configuration - drop the chip in and the unit boots. Full CMOS construction keeps standby power low on equipment that runs 24/7, and the 4.5 V to 5.5 V tolerance absorbs midplane supply variation. Field engineers should qualify broker stock by date code and sample-test access timing, because EOL SRAM sourced from excess inventory occasionally shows degraded retention or speed bins.
Recomendado
Battery-Backed Data Logging
In data-logging and metering products, the K6X1008C2D-TF55 stores logged samples in a battery-backed domain, using its CMOS standby mode to stretch backup-cell life for months or years. The 128K x 8 organization gives 131,072 sample bytes of directly addressable storage, enough for substantial event histories without external addressing logic. Write protection is achieved simply by gating CE or WE with a power-fail signal, an approach compatible with the asynchronous interface and 5 V supervisor ICs already present in these designs. The 55 ns write-cycle timing comfortably handles burst logging from slow serial sensors. Because REVERSE TSOP orientation mistakes are destructive, layouts should include pin-1 polarity checks in ICT before battery connection.
Recomendado
Aerospace Ground Support & Legacy Avionics Maintenance
Ground-support equipment and maintained legacy avionics line-replaceable units frequently specify 5 V CMOS SRAM such as the K6X1008C2D-TF55 for non-flight-critical storage. Maintenance depots value the part's simple asynchronous interface, which allows verification with basic memory-test fixtures - write/read full patterns at 55 ns timing with no configuration step. The wide 4.5 V to 5.5 V input band tolerates generator-driven supply variation common in hangar power. Because this market cannot redesign certified hardware, EOL-management services and broker stock (e.g., the 3,855 units listed by excess channels) are the practical supply path, and documentation of date codes and lot traceability is expected. Cross-brand equivalents require formal change approval before use.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K6X1008C2D-TF55 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K6X1008C2D-GF55 | K6X1008C2D-TF70 | K6X1008C2D-TB55 | M5M51008DVP-55HI |
|---|---|---|---|---|---|
| Package | 32-TSOP REVERSE | 32-TSOP (same die) | 32-TSOP REVERSE | 32-TSOP | 32-TSOP (verify pinout) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics (BSI functional equiv. listed) | Renesas Electronics |
| Organization | 128K x 8 | 128K x 8 | 128K x 8 | 128K x 8 | 128K x 8 |
| Access Time (tAA) | 55 ns | 55 ns | 70 ns | 55 ns | 55 ns |
| Memory Size | 1 Mbit | 1 Mbit | 1 Mbit | 1 Mbit | 1 Mbit |
Principais diferenciais
- Fastest 5 V grade in the K6X1008C2D family (vs K6X1008C2D-TF70)
- Full 1 Mbit density in a 5 V asynchronous interface (vs K6X0808C1D-BF55)
- Same-die pin-compatible variants for repair stock (vs M5M51008DVP-55HI)
Notas de projeto
The K6X1008C2D-TF55 uses a 32-TSOP REVERSE pinout, which is mirrored versus a standard TSOP-II 32 footprint. Samsung's datasheet revision history explicitly deleted the 32-TSOP1-0820R package entry, showing the family shipped with more than one pinout convention during its life. Before reflow, print the footprint from your specific datasheet revision and verify pin 1 (CE location) against the board silkscreen. Placing a standard-TSOP die on a REVERSE footprint shorts Vcc to ground and destroys both the SRAM and often the CPU bus.
Power the device from a regulated 5 V rail held within 4.5 V to 5.5 V; no pin is 3.3 V tolerant. Estimated power dissipation is modest: 5 V x 35 mA = 175 mW during active access, so no thermal copper is required. For battery-backed designs, budget for CMOS standby current from the datasheet DC table and gate CE high during power-down; an incomplete CE level during brownout can corrupt data. Add a 0.1 uF ceramic decoupling capacitor within 3 mm of the Vcc pin plus 4.7 uF bulk per bank.
Because the part is EOL, broker stock may mix speed grades and date codes. Sample-test incoming lots by writing and reading full checkerboard patterns at your system's worst-case timing, and confirm the 55 ns grade (not 70 ns) if your design has no wait states. If using the K6X0808C1D half-density variant to fill sockets, tie the unused highest address pin appropriately - a floating A16 on a reduced-density footprint can alias addresses. Document substitutions with both datasheets attached for change-control.
Informações de conformidade
Distributor listings (DigiKey Marketplace, radhardic.com) report RoHS status Yes for this MPN. Because the part is EOL, no current Samsung environmental declaration page is available; REACH/halogen/conflict-minerals status set to unknown rather than assumed.
