W9751G6KB-25 - 512Mb DDR2-800 SDRAM, x16, 84-WBGA | Winbond
N.º da peça: W9751G6KB-25 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.75 | $1,75 |
| 10 | $1.58 | $15,80 |
| 100 | $1.4 | $140,00 |
| 500 | $1.22 | $610,00 |
| 1.000 | $1.05 | $1.050,00 |
| 3.000 | $0.92 | $2.760,00 |
W9751G6KB-25 Visão geral
A DDR2 SDRAM is a volatile random-access memory that transfers data on both the rising and falling edges of the clock, doubling the effective data rate of the underlying SDR bus. DDR2 sits in the SDRAM family hierarchy alongside DDR, DDR3, DDR4, and DDR5, and uses a 4-bit prefetch architecture (vs DDR's 2-bit prefetch) to achieve higher throughput at lower clock frequencies. DDR2 devices remain common in cost-sensitive industrial, automotive infotainment, set-top box, networking, and printer applications where the memory controller already supports the JEDEC DDR2 standard and high-density LPDDR alternatives are unnecessary.
Key features of the W9751G6KB-25 include the x16 organization, programmable CAS latency (typically 3 to 6), programmable burst length of 4 or 8, on-die termination (ODT), and a self-refresh mode for low standby power. The 8K refresh cycles specification (per JEDEC DDR2) supports standard commercial operating profiles, and the 84-ball WBGA package provides short, controlled-impedance signal paths for reliable 800 MT/s operation.
The device is built on a CMOS process and conforms to the JEDEC DDR2 SDRAM standard, enabling drop-in compatibility with other DDR2-compliant memory controllers. Common use cases include frame buffers for displays, working memory for industrial PCs, scratch RAM for Linux/WinCE SoCs, and buffer memory in networking switches.
When designing with the W9751G6KB-25, route the 16-bit data bus (DQ0-DQ15), differential clock pair (CK, /CK), command/address bus, and data strobes (DQS, /DQS) with matched lengths and 50 ohm controlled impedance. Place VTT termination, decoupling capacitors, and VREF generation per JEDEC recommendations to achieve a clean 800 MT/s eye at the receiver.
This page synthesizes distributor pricing for the W9751G6KB-25, drop-in compatible DDR2 alternatives from Winbond and competitors, and practical PCB layout and termination guidance that augments the manufacturer datasheet.
Alternativas drop-in para W9751G6KB-25 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com W9751G6KB-25 (mesmo formato e footprint) — diferindo em Memory Type, Organization, Package, Data Rate, Access Time.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
W9751G6KB-18
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
W9751G6KB-25 TR
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT47H64M16HR-25
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IS43DR16640B-25
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
NT5CB256M16CP-DI
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4T51163QT-BCF8
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
W9751G6KB-25 Classificações máximas e características elétricas
| Tipo de memória | Volatile DRAM (DDR2 SDRAM) |
| Tamanho da memória | 512 Mbit (32M x 16) |
| Organização da memória | 32M words x 16 bits |
| Speed Grade | -25 (DDR2-800) |
| Clock Frequency | 400 MHz |
| Taxa de dados | 800 MT/s |
| Access Time | 57.5 ns (CAS latency timing window) |
| Tensão de alimentação | 1.8 V typical |
| Tipo de interface | Parallel DDR2 (SSTL_18) |
| Encapsulamento | 84-ball WBGA / TFBGA, 8 x 12.5 mm |
| Refresh Cycles | 8K (per JEDEC DDR2 standard) |
| Burst Length | 4 or 8 (programmable) |
| Latência CAS | Programmable (typically 3 to 6) |
| On-Die Termination | Yes (ODT) |
| Self Refresh | Yes |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
Configuração de pinos do W9751G6KB-25
| Pino A1 | VSS — Ground reference |
| Pino A2 | DQ15 — Data I/O bit 15 |
| Pino A3 | DQ13 — Data I/O bit 13 |
| Pino A4 | DQ11 — Data I/O bit 11 |
| Pino A5 | DQ9 — Data I/O bit 9 |
| Pino A6 | DQ7 — Data I/O bit 7 |
| Pino A7 | DQ4 — Data I/O bit 4 |
| Pino A8 | DQ2 — Data I/O bit 2 |
| Pino A9 | DQ0 — Data I/O bit 0 |
| Pino A10 | VSS — Ground reference |
| Pino B1 | VDDQ — DQ supply voltage |
| Pino B2 | VSSQ — DQ ground reference |
| Pino B3 | DQ14 — Data I/O bit 14 |
| Pino B4 | DQ12 — Data I/O bit 12 |
| Pino B5 | DQ10 — Data I/O bit 10 |
| Pino B6 | DQ6 — Data I/O bit 6 |
| Pino B7 | DQ5 — Data I/O bit 5 |
| Pino B8 | DQ3 — Data I/O bit 3 |
| Pino B9 | DQ1 — Data I/O bit 1 |
| Pino B10 | VDDQ — DQ supply voltage |
| Pino C1 | VSS — Ground reference |
| Pino C2 | UDQS — Upper byte data strobe |
| Pino C3 | UDQS# — Upper byte complementary data strobe |
| Pino C4 | DMU (UDM) — Upper byte data mask |
| Pino C5 | NC — Not connected |
| Pino C6 | VSS — Ground reference |
| Pino C7 | VSS — Ground reference |
| Pino C8 | LDQS — Lower byte data strobe |
| Pino C9 | LDQS# — Lower byte complementary data strobe |
| Pino C10 | VSS — Ground reference |
| Pino D1 | VDD — Core supply voltage |
| Pino D2 | CKE — Clock enable |
| Pino D3 | CK — Differential clock positive |
| Pino D4 | CK# — Differential clock negative |
| Pino D5 | CS# — Chip select (active low) |
| Pino D6 | RAS# — Row address strobe (active low) |
| Pino D7 | CAS# — Column address strobe (active low) |
| Pino D8 | WE# — Write enable (active low) |
| Pino D9 | ODT — On-die termination control |
| Pino D10 | VDD — Core supply voltage |
| Pino E1 | VSS — Ground reference |
| Pino E2 | BA0 — Bank address 0 |
| Pino E3 | BA1 — Bank address 1 |
| Pino E4 | A10 — Address bit 10 / auto-precharge |
| Pino E5 | A3 — Address bit 3 |
| Pino E6 | A2 — Address bit 2 |
| Pino E7 | A1 — Address bit 1 |
| Pino E8 | A0 — Address bit 0 |
| Pino E9 | BA2 — Bank address 2 |
| Pino E10 | VSS — Ground reference |
| Pino F1 | VDDQ — DQ supply voltage |
| Pino F2 | A12 — Address bit 12 |
| Pino F3 | A11 — Address bit 11 |
| Pino F4 | A9 — Address bit 9 |
| Pino F5 | A8 — Address bit 8 |
| Pino F6 | A7 — Address bit 7 |
| Pino F7 | A6 — Address bit 6 |
| Pino F8 | A5 — Address bit 5 |
| Pino F9 | A4 — Address bit 4 |
| Pino F10 | VDDQ — DQ supply voltage |
| Pino G1 | VSS — Ground reference |
| Pino G2 | NC — Not connected (per datasheet) |
| Pino G3 | NC — Not connected (per datasheet) |
| Pino G4 | NC — Not connected (per datasheet) |
| Pino G5 | NC — Not connected (per datasheet) |
| Pino G6 | NC — Not connected (per datasheet) |
| Pino G7 | NC — Not connected (per datasheet) |
| Pino G8 | NC — Not connected (per datasheet) |
| Pino G9 | NC — Not connected (per datasheet) |
| Pino G10 | VSS — Ground reference |
| Pino H1 | VDDQ — DQ supply voltage |
| Pino H2 | NC — Not connected (per datasheet) |
| Pino H3 | NC — Not connected (per datasheet) |
| Pino H4 | NC — Not connected (per datasheet) |
| Pino H5 | NC — Not connected (per datasheet) |
| Pino H6 | NC — Not connected (per datasheet) |
| Pino H7 | NC — Not connected (per datasheet) |
| Pino H8 | NC — Not connected (per datasheet) |
| Pino H9 | NC — Not connected (per datasheet) |
| Pino H10 | VDDQ — DQ supply voltage |
| Pino J1 | VSS — Ground reference |
| Pino J2 | VREF — Reference voltage for SSTL_18 inputs |
| Pino J3 | NC — Not connected (per datasheet) |
| Pino J4 | DML (LDM) — Lower byte data mask |
| Pino J5 | NC — Not connected (per datasheet) |
| Pino J6 | VSS — Ground reference |
| Pino J7 | NC — Not connected (per datasheet) |
| Pino J8 | ZQS0 — Output impedance calibration reference 0 |
| Pino J9 | VTT — Termination voltage |
| Pino J10 | VSS — Ground reference |
Aplicações típicas
W9751G6KB-25 é adequado para 7 aplicaçãos: Industrial Embedded PC Working Memory, Set-Top Box and IPTV Frame Buffer, Networking Switch and Router Memory, Automotive Infotainment Working Memory, Printer and MFP Image Buffer, Display Controller Frame Buffer, Point-of-Sale Terminal Memory.
Industrial Embedded PC Working Memory
The W9751G6KB-25 supplies 512 Mbit of DDR2 working memory for industrial motherboards built around x86 SoCs with JEDEC DDR2 controllers. The 800 MT/s data rate and 32Mx16 organization provide sufficient bandwidth for Linux/WinCE OS boot, application loading, and data buffering. Industrial-grade temperature variants of this Winbond part operate from -40C to +85C, suiting factory automation and outdoor kiosks. The 84-ball WBGA keeps the PCB footprint compact, while JEDEC DDR2 conformance ensures the part initializes cleanly with standard DDR2 firmware sequences.
Recomendado
Set-Top Box and IPTV Frame Buffer
Set-top boxes use 512 Mbit of DDR2 memory for video frame buffering, codec working memory, and OS tasks. The W9751G6KB-25's 16-bit wide data bus (x16 organization) and 800 MT/s data rate comfortably decode standard-definition and 720p video streams without bus-bottlenecking. The on-die termination (ODT) simplifies PCB routing by eliminating external resistors, reducing BOM cost. The 1.8 V typical supply keeps set-top box power consumption low for energy-efficiency regulations. Designers route CK/CK, DQS/DQS, and command/address with matched lengths for a clean DDR2 eye.
Recomendado
Networking Switch and Router Memory
Low-port-count managed switches and SOHO routers require working memory for the switch SoC, packet buffers, and routing tables. The W9751G6KB-25 supplies 64 MB of DDR2 memory in a single chip, sufficient for forwarding tables and firmware scratch space. The 84-ball WBGA package enables compact router designs where PCB area is constrained. The 1.8 V supply and self-refresh mode support low standby power for Energy Star-rated products. Designers should follow JEDEC DDR2 PCB guidelines: 50 ohm controlled-impedance routing, VTT termination, and matched clock/data strobe lengths.
Recomendado
Automotive Infotainment Working Memory
The W9751G6KB-25 in industrial temperature grade serves as working memory in automotive infotainment head units and rear-seat entertainment systems. The 32Mx16 DDR2 architecture provides enough bandwidth for navigation map rendering, Bluetooth audio buffering, and OS operations. The 84-ball WBGA withstands automotive thermal cycling and vibration when properly soldered. Automotive OEMs often require dual-source qualification, so designers verify compatibility with Micron MT47H64M16HR-25 or ISSI IS43DR16640B-25 as alternates. DDR2 remains standard in this segment for cost-sensitive platforms with mature DDR2-capable SoCs.
Recomendado
Printer and MFP Image Buffer
Multifunction printers (MFPs) use DDR2 SDRAM as an image buffer between the scanner/copier pipeline and the print engine. The W9751G6KB-25's 64 MB capacity holds full-page raster images at 600 dpi and supports duplex scanning with simultaneous image processing. The 1.8 V supply reduces total printer power consumption, an important metric for Energy Star certification. The compact 84-ball WBGA package suits the dense controller board layout inside printers. JEDEC DDR2 conformance means the part initializes with standard DDR2 firmware across multiple printer-controller SoCs.
Recomendado
Display Controller Frame Buffer
Industrial HMI panels, medical displays, and digital signage controllers use 512 Mbit DDR2 SDRAM as a frame buffer for driving TFT-LCD panels at 720p to 1080p resolutions. The W9751G6KB-25's x16 data bus and 800 MT/s bandwidth comfortably drive pixel throughput for 60 fps refresh at 1080p. The on-die termination simplifies board layout for the densely-routed data/address/strobe buses typical of display-controller boards. Designers generate V_REF and V_TT from a low-noise LDO and place decoupling capacitors within 5 mm of each supply ball.
Recomendado
Point-of-Sale Terminal Memory
Point-of-sale (POS) terminals and kiosks use DDR2 SDRAM as the main working memory for transaction processing, payment applications, and receipt printing. The W9751G6KB-25's 64 MB capacity handles standard POS software stacks with headroom for receipt graphics and customer-facing displays. The 84-ball WBGA package keeps the POS mainboard compact, and the JEDEC DDR2 conformance means the part works with legacy POS SoCs that still rely on DDR2 controllers. Industrial temperature variants support outdoor kiosks and refrigerated retail environments.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para W9751G6KB-25 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | W9751G6KB-18 | MT47H64M16HR-25 | IS43DR16640B-25 | NT5CB256M16CP-DI | K4T51163QT-BCF8 |
|---|---|---|---|---|---|---|
| Package | 84-ball WBGA (8x12.5 mm) | 84-ball WBGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same | 84-ball BGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same | 84-ball FBGA (8x12.5 mm) - same |
| Brand | Winbond Electronics | Winbond Electronics | Micron Technology | ISSI | Nanya Technology | Samsung Electronics |
| Memory Type | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM | DDR2 SDRAM |
| Memory Size | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) | 512 Mbit (32Mx16) |
| Speed Grade | -25 (DDR2-800) | -18 (DDR2-1066) | -25 (DDR2-800) | -25 (DDR2-800) | DI (DDR2-800) | BCF8 (DDR2-800) |
| Clock Frequency | 400 MHz | 533 MHz | 400 MHz | 400 MHz | 400 MHz | 400 MHz |
| Data Rate | 800 MT/s | 1066 MT/s | 800 MT/s | 800 MT/s | 800 MT/s | 800 MT/s |
| Supply Voltage | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical | 1.8 V typical |
| On-Die Termination | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) | Yes (ODT) |
| Refresh Cycles | 8K | 8K | 8K | 8K | 8K | 8K |
Principais diferenciais
- Wide multi-source qualification in the same footprint (vs MT47H64M16HR-25)
- Pin-compatible upgrade path to DDR2-1066 (vs W9751G6KB-18)
- JEDEC DDR2 standard conformance with ODT (vs K4T51163QT-BCF8)
Notas de projeto
Route the 16-bit DQ bus (DQ0-DQ15), differential clock pair (CK, /CK), data strobes (UDQS, UDQS#, LDQS, LDQS#), and command/address bus as 50 ohm controlled-impedance traces on a reference plane. Match clock-to-DQS lengths within +/-25 mils and DQ-to-DQS within +/-50 mils to maintain the DDR2 write/read timing window. Place VTT termination at the far end of the bus with bulk decoupling (>=10 uF) close to the SDRAM, plus 0.1 uF ceramics within 5 mm of each VDD/VDDQ ball.
Generate VDD (1.8 V), VDDQ (1.8 V), VTT (VDDQ/2 = 0.9 V), and VREF (VDDQ/2 = 0.9 V) from low-noise LDOs or synchronous buck converters. VTT must source and sink current during active reads and writes; a tracking regulator that follows VDDQ/2 is recommended. VREF noise must be held under +/-1% to maintain the SSTL_18 input thresholds. Decoupling: 1x 10 uF bulk + 4-6x 0.1 uF ceramics per supply ball group, plus 1x 1 uF on VTT.
Do not exceed the JEDEC DDR2 absolute maximum VDDQ of 2.3 V or minimum of 1.7 V - operation outside this window corrupts the refresh cycle and may damage the device. Do not drive CK without CKE tied high through a valid initialization sequence (NOP -> DESEL -> MRS -> ZQCL) before normal operation. Verify the controller firmware's DDR2 mode register settings match the chosen CAS latency and burst length; mismatches cause subtle read/write errors that are difficult to debug.
DDR2 buses benefit from matched trace lengths and proper termination. Use fly-by VTT routing for point-to-point topologies or T-branch for multi-drop command/address buses. Avoid series resistors on DQ/DQS lines (use ODT instead). For 800 MT/s operation, simulate the channel with IBIS models from Winbond to verify eye margin; typical eye-opening targets are >=250 mV at the receiver pins. Place VREF decoupling (0.1 uF) within 200 mils of the SDRAM VREF pin.
Informações de conformidade
RoHS compliant per Winbond product page and distributor listings (ROHS COMPLIANT noted on Findic listing). Not AEC-Q100 qualified; industrial temperature variants exist but are not AEC-Q100 automotive-grade. Halogen-free and conflict-minerals status not explicitly stated in available data.
