MOSFET-транзисторы
Товары (1287)
BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon
The Infineon BSC022N04LS6ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 6 technology, rated for 40 V drain-source voltage with an ultra-low maximum on-resistance of 2.2 mOhm. Housed in a SuperSO8 5x6 (PG-TDSON-8-1) surface-mount package, it delivers continuous drain current of 27 A at Ta and up to 100 A at Tc, making it well suited to high-current synchronous rectification and load-switching stages. The OptiMOS™ 6 process minimizes gate charge, output charge and reverse-recovery charge, allowing the part to switch efficiently at high frequencies. What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor device used to switch or amplify power in electronic circuits. It belongs to the broader family of transistors, which also includes BJTs and IGBTs. N-channel MOSFETs use electrons as the majority carrier and therefore offer lower on-resistance per unit silicon than equivalent P-channel parts - hence their dominance in high-current, low-voltage DC-DC converters, motor drives and battery-protection switches. Key features of the BSC022N04LS6ATMA1 include a typical gate threshold around 1.7 V (logic-level compatible), low figure-of-merit (FOM = RDS(on) x Qg), and an operating junction temperature range suitable for industrial environments. The 5x6 mm SuperSO8 footprint combines a compact PCB area with an exposed thermal pad that pulls heat directly into the copper pour, keeping junction temperature rise modest even at tens of amps. OptiMOS™ 6 represents Infineon's latest generation of trench MOSFETs, characterized by optimized cell pitch, lower parasitic capacitances, and improved avalanche ruggedness. Compared with older OptiMOS™ 3 or 5 generations, the 6 series delivers measurably lower switching losses at the same RDS(on), enabling higher-frequency operation in SMPS designs. Typical applications for this part include synchronous rectification in 24 V to 40 V DC-DC buck and half-bridge converters, hot-swap and OR-ing switches on server/telecom boards, battery-management and protection FETs in e-mobility and power tools, and motor-drive low-side switches in industrial automation. The low RDS(on) also makes the part attractive as a low-side switch in Class-D audio amplifiers and as a load switch in USB-PD power-path designs. When designing with this part, ensure the gate driver can supply sufficient peak current to rapidly charge the input capacitance (Qg) at the chosen switching frequency. Always verify SOA at worst-case VIN, IL and duty cycle, and place the gate-drive return path directly adjacent to the source pin to minimize parasitic inductance that would otherwise cause ringing and possible dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a faster path from selection to layout.
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
The Infineon BSC023N08NS5SCATMA1 is an N-channel 80 V OptiMOS 5 power MOSFET housed in a PG-WSON-8-2 (SuperSO8 DSC) surface-mount package, delivering up to 202 A continuous drain current at 25 °C case temperature and 188 W power dissipation. The device features an exceptionally low typical on-state resistance of 2.3 mΩ at VGS = 10 V, ID = 50 A, making it one of the lowest-RDS(on) parts in the 80 V OptiMOS 5 family. An N-channel power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or block current in power-conversion circuits. In the broader taxonomy, it sits inside the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, which sits alongside GaN and SiC as one of the dominant power-switch technologies for sub-200 V applications. Low RDS(on) directly translates into lower conduction losses, smaller heat sinks, and higher system efficiency. Key specifications include 2.3 mΩ typical RDS(on) at 10 V VGS, a gate threshold of 3.8 V, a total gate charge of 98 nC at 10 V VGS, an input capacitance of 6.8 nF, an output capacitance of 74 pF, and a junction-to-case thermal resistance of 0.72 K/W. The combination of low charge and low capacitance supports high-frequency switching in telecom, server, and motor-drive converters. The MOSFET is built on Infineon's OptiMOS 5 trench process, which reduces cell pitch and on-state losses versus earlier OptiMOS generations. The SuperSO8 DSC package exposes the die through a large top-side cooling pad, achieving the 0.72 K/W RthJC figure that allows the device to dissipate 188 W with proper PCB thermal design. Typical applications include telecom and server point-of-load converters, 48 V battery-management FETs, AGV and e-forklift motor drives, synchronous rectification in telecom bricks, and high-current DC-DC buck stages for hyperscale data centers. The wide -55 °C to +175 °C junction range also supports harsh-environment industrial designs. Designers should plan thermal copper area and gate-drive strength carefully. With a 98 nC total gate charge, a 1 A gate driver is recommended for nanosecond-class switching, and a Kelvin-source connection (pin 4 on SuperSO8 DSC) must be tied to the gate-return path to suppress common-source inductance. This page synthesizes distributor pricing, parametric alternatives, and practical design notes not consolidated in the Infineon datasheet.
BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon
The Infineon BSC026N04LSATMA1 is an N-channel OptiMOS™ power MOSFET rated at 40 V drain-source voltage with an ultra-low typical on-resistance of 2.6 mΩ, supporting 23 A continuous drain current (Ta) and 100 A pulsed drain current (Tc) in a surface-mount PG-TDSON-8-6 (5x6 mm) package. It is engineered for high-efficiency synchronous rectification and fast-switching power-conversion applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to commutate current in power-conversion circuits. Within the broader taxonomy, this part belongs to: power MOSFET → discrete semiconductor → transistor → semiconductor. N-channel MOSFETs such as the BSC026N04LSATMA1 conduct when a positive gate-source voltage (VGS) is applied, making them the preferred low-side and high-side switch in buck, boost, and half-bridge topologies. Key differentiators include Infineon's OptiMOS™ 5 process technology, an integrated Schottky-like monolithically optimized body diode for reduced reverse-recovery charge (Qrr), and a gate charge (Qg) optimized for high-frequency operation. The 2.6 mΩ RDS(on) at VGS=10 V and thermally efficient PG-TDSON-8-6 package minimize conduction losses and improve power density. The low figure-of-merit (FOM = RDS(on) × Qg) makes this device well suited to server, telecom, and DC-DC converter designs switching at 300 kHz to 1 MHz. Architecturally, the OptiMOS™ 5 generation uses a trench-gate structure that lowers cell pitch while improving avalanche ruggedness. The resulting die shrinks gate charge without sacrificing SOA, enabling high-current pulses up to 400 A (pulsed, limited by package). Compared to planar predecessors, switching losses are typically reduced by 30-50%. Typical applications include synchronous rectification in 12 V and 24 V switched-mode power supplies (SMPS), server and datacom VRM stages, motor-drive H-bridges, hot-swap and OR-ing controllers, and battery protection circuits in power tools. The PG-TDSON-8-6 footprint is widely adopted across Infineon's OptiMOS™ family, simplifying multi-variant PCB designs. When designing with this part, ensure the gate-drive voltage reaches 10 V for full RDS(on) rating, use a Kelvin-source connection where possible to suppress source-inductance ringing, and observe the 63 W (Tc) power dissipation limit at the case. The exposed pad must be soldered to a sufficient copper pour (≥1 sq inch) to maintain junction temperature within SOA. This page synthesizes drop-in alternatives, distributor pricing benchmarks, and design considerations beyond the manufacturer datasheet.
BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon
The Infineon BSC027N04LSGATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 technology, rated at 40 V VDS and offering an ultra-low typical on-resistance of 2.7 mΩ in a PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. It supports continuous drain current up to 24 A at Ta (25°C) and 100 A at Tc (25°C), with power dissipation ratings of 2.5 W (Ta) and 83 W (Tc). An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled power switch in which a positive gate-source voltage creates an n-type conduction channel between drain and source. The OptiMOS 3 family belongs to the hierarchy power MOSFET -> discrete semiconductor -> transistor -> semiconductor, and is engineered for synchronous rectification, DC-DC conversion, and high-frequency switching power stages where low conduction loss, low gate charge, and small footprint are required. Key features include an industry-leading 2.7 mΩ maximum RDS(on) at VGS=10 V, low gate charge (Qg) optimized for high-frequency operation, a logic-level-compatible gate drive threshold, and an exposed-drain SuperSO8 5x6 pad that reduces thermal resistance to the PCB. The TDSON-8 footprint is shared across the OptiMOS 3 family, giving designers a uniform PCB land pattern for migration between current and voltage grades. The device is built on Infineon's trench MOSFET process, which minimizes cell pitch and maximizes silicon utilization to deliver class-leading figure-of-merit (FOM = RDS(on) × Qg). The integrated Schottky-like body diode and dv/dt ruggedness further simplify use in half-bridge and synchronous buck topologies. Typical applications include synchronous rectification in 12 V buck converters for server and telecom POL rails, OR-ing and hot-swap switches on 24 V industrial buses, motor drive H-bridges in 12 V/24 V brushless DC fans and tools, battery protection circuits in 4S-10S Li-ion packs, and USB-PD / Type-C high-current load switches. When designing with the BSC027N04LSGATMA1, place it on a copper pour of at least 25 mm² per side to keep junction temperature within SOA, and use a 10 V VGS drive to achieve the published 2.7 mΩ RDS(on). Avoid operating continuously near the 100 A Tc limit - derate to roughly 50-60 % of that figure in space-constrained layouts to preserve long-term reliability. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon
The Infineon BSC027N06LS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, rated for 60 V drain-source voltage and offering a maximum on-resistance of 2.7 mOhm at 10 V VGS in a SuperSO8 5x6 (PG-TDSON-8-7) surface-mount package. The device supports a continuous drain current of up to 100 A (Tc) and dissipates up to 83 W (Tc), making it one of the lowest-RDS(on) 60 V logic-level MOSFETs in its footprint. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or switch power in electronic systems. MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> FETs -> power MOSFETs, and they are the workhorse of switched-mode power supplies (SMPS), motor drives, and battery protection. The 'OptiMOS 5' family from Infineon represents the fifth generation of trench-gate power MOSFETs, optimized for very low figure-of-merit (RDS(on) x Qg) and high switching frequencies. Key features include an ultra-low RDS(on) of 2.7 mOhm at VGS=10V, logic-level gate drive (4.5V VGS capable), and an exposed-drain SuperSO8 pad that yields RthJA of approximately 50 C/W on a standard 1 oz copper 1-inch² PCB footprint. The avalanche-rated design and 100% Rg-tested production flow make it suitable for hard-switched topologies where dv/dt stress is significant. The OptiMOS 5 process uses a 60 V trench-gate charge-balance cell structure to achieve the industry's lowest RDS(on) per unit silicon area at this voltage class. This translates to lower conduction losses, reduced heatsink requirements, and higher power density in end applications. The device's low gate charge (Qg) and small Qgd/Qgs ratio also minimize switching losses at high frequencies (up to 1 MHz in well-designed loops). Typical applications include synchronous rectification in 48 V telecom and server DC-DC converters, solar micro-inverters and power optimizers, USB-PD and high-current adapter output stages, hot-swap and OR-ing controllers, and battery management for power tools and e-mobility. The 60 V rating provides comfortable margin in 24 V and 36 V industrial buses. When designing with this part, prioritize minimizing parasitic source inductance in the gate-drive loop and use a Kelvin-source PCB layout where possible. The exposed pad must be soldered to a sufficiently large copper pour (at least 1 cm²) to keep RthJA within datasheet limits; failure to do so derates continuous current dramatically. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC027N10NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 100V technology platform, rated for 100V VDS, 2.7 mOhm maximum RDS(on), and a continuous drain current of 23A (Ta) / 100A (Tc), housed in a PG-TSON-8-3 (SuperSO8 5x6) surface-mount package. It is engineered for high-efficiency power conversion where low conduction loss, high inrush capability, and small PCB footprint are critical. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used to switch or amplify power in electronic circuits. N-channel MOSFETs are the dominant choice for low-side and high-side switching because their majority carriers (electrons) offer lower on-resistance per unit silicon area than P-channel equivalents. Within the discrete semiconductor hierarchy, MOSFETs sit under transistors, then power semiconductors, then discrete semiconductors. Key specifications include 2.7 mOhm maximum RDS(on) at VGS=10V, 100V drain-source breakdown, 194A pulsed ID (Tc), and a power dissipation rating of 3W (Ta) / 214W (Tc) with the exposed pad soldered to a 1 sq-inch copper pour. The SuperSO8 footprint offers a Kelvin-source connection at pin 4 that removes the source-bond wire resistance from the gate-drive loop, improving switching performance at high di/dt. OptiMOS 5 uses Infineon's latest trench-cell architecture, reducing figure-of-merit (FOM = RDS(on) x Qg) versus OptiMOS 3 by roughly 40 percent. This enables either higher efficiency at the same frequency or smaller magnetics at the same efficiency, both of which are decisive in 48V telecom buses, server VRMs, and solar micro-inverters. Typical applications include synchronous rectification in 48V DC-DC converters, hot-swap and OR-ing circuits in server CRPS power shelves, motor drive half-bridges, and battery protection in e-mobility. The 100V rating provides ample margin for 48V nominal rails and industrial 72V transient environments. Designers should minimize parasitic source inductance to exploit the Kelvin pin and must verify the PCB copper area meets the 214W Tc dissipation envelope. The AEC-Q101-qualified version (BSC027N10NS5) is preferred for automotive environments. This page consolidates distributor pricing, drop-in compatible alternatives, and engineering guidance not found in the standalone datasheet, giving procurement and design teams a single source for evaluation.
BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC028N06NSTATMA1 is a 60 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, delivering an ultra-low maximum on-resistance of 2.8 mΩ at 10 V VGS in a SuperSO8 / PG-TDSON-8-7 surface-mount package. It is rated for 24 A continuous drain current at TA=25°C and up to 100 A at TC=25°C, with 3 W power dissipation on the PCB footprint and 100 W with case-temperature-controlled mounting. The 028N06NS part number encodes its family (OptiMOS 5 60 V N-channel) and its 2.8 mΩ RDS(on) target. What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled switch used to switch or amplify signals in electronic circuits. An N-channel MOSFET conducts current between drain and source when a positive gate-source voltage exceeds Vth; for power conversion, the key figure of merit is RDS(on) × Qg (lower = lower conduction AND switching loss). Infineon's OptiMOS 5 is a 60 V-300 V platform that reduces both figures by ~30-50% versus prior OptiMOS generations, sitting in the broader hierarchy: power MOSFET -> discrete semiconductor -> power management. Key specifications include a 60 V drain-source breakdown voltage, 2.8 mΩ maximum RDS(on) at VGS=10 V, gate threshold voltage typically 2.5-3.5 V, total gate charge of approximately 37 nC, and an operating junction temperature range of -55°C to +175°C. The PG-TDSON-8-7 (5x6 mm SuperSO8) package uses an exposed drain pad for direct PCB heat-sinking with a thermal resistance that supports 100 W when mounted on a 1 in² copper pad. The OptiMOS 5 cell architecture uses a shielded-gate trench design with a low-resistance substrate, achieving the 2.8 mΩ on-state figure in a footprint less than 30 mm². This combination of low RDS(on), moderate gate charge, and small package makes the part suitable for high-frequency synchronous rectification in switch-mode power supplies (SMPS) where both conduction and switching loss matter. Typical applications include synchronous rectification in server, desktop and tablet charger SMPS, DC-DC converter high-side and low-side switches, motor drive H-bridges (12-48 V systems), battery management OR-ing and protection, and eMobility / 48 V mild-hybrid power distribution. The 60 V rating provides comfortable headroom for 24 V industrial and 36-48 V eMobility buses. When designing with this MOSFET, prioritize minimizing source-inductance by short, wide source/return paths on the PCB and by using the source-pad down configuration. Drive the gate with a 4-10 V gate-drive voltage; the part's 2.5-3.5 V threshold means standard 5 V logic-level drives work for low-frequency switching, but 10 V is recommended for full RDS(on) and lowest loss. This page synthesizes distributor pricing, parametric drop-in alternatives, application notes, and PCB-layout guidance not found in the manufacturer datasheet alone, giving procurement and design engineers a single source for evaluating the BSC028N06NSTATMA1.
BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon
The Infineon BSC030N03LSGATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 3 family, rated for 30 V drain-source breakdown voltage and delivering up to 100 A continuous drain current (Tc) in a compact PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. Its headline figures are a maximum on-state resistance of 3 mOhm at VGS=10 V and an ultra-low gate charge of 55 nC typical, with an output charge of about 66 pF and a Miller plateau input capacitance of approximately 4.3 nF. Power dissipation is 2.5 W at Ta and 69 W at Tc, suiting it for high-current, low-loss switching roles. What is an N-channel power MOSFET? A power MOSFET is a voltage-controlled majority-carrier device used as a switch or linear element in power-conversion circuits. Compared with older planar MOSFETs, trench-based OptiMOS devices place the gate in a vertical trench, shrinking the cell pitch and dramatically lowering RDS(on) and gate charge per unit silicon area. The BSC030N03LSGATMA1 sits in the 30 V OptiMOS 3 tier that targets synchronous rectification, DC-DC converter high-side/low-side switches, and OR-ing switches in server, datacom and telecom rails, where it sits inside a hierarchy of MOSFET -> power transistor -> discrete semiconductor -> power management building block. Key features include best-in-class Figure of Merit (FOM = RDS(on) x Qg), low thermal resistance from the exposed SuperSO8 leadframe, a logic-level-compatible 2.2 V threshold range, and 100 % avalanche-tested construction. The 3 mOhm RDS(on) is achieved at VGS=10 V; at VGS=4.5 V the typical on-resistance rises modestly, enabling gate drive from standard 5 V PWM controllers. Combined with the 4.3 nF Ciss, the part is optimized for hard-switched topologies at 200 kHz to 1 MHz without suffering excessive switching loss. The device is built on Infineon's proven 30 V OptiMOS 3 trench process, balancing low specific on-resistance with excellent body-diody reverse-recovery softness. Its avalanche rating and 150 C junction temperature give designers extra margin in fault-tolerant server and telecom power supplies. Compared with previous-generation 30 V parts, it cuts conduction losses by roughly 30 % in the same footprint, freeing board area for higher power density. Typical applications include synchronous rectifiers in 12 V buck converters for servers, high-side/low-side switches in telecom brick converters, battery protection and OR-ing in 12 V distributed systems, hot-swap controllers, and motor-drive H-bridges in 24 V industrial systems. Designers select it when every milliohm of conduction loss matters, when PCB real estate is tight, and when the upstream controller can supply 10 V gate drive. When designing in, use a low-inductance gate-driver loop and a Kelvin source connection if available to keep switching loss under control. Because the part dissipates up to 69 W at Tc, the PCB copper pour under the exposed pad is the primary heatsink - refer to Infineon application notes for pad layout. This page synthesizes distributor pricing, drop-in same-brand alternatives, design notes, and a parametric comparison against peer MOSFETs - information gain not present in the raw manufacturer datasheet.
BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon
The Infineon BSC030N03MSGATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3M process, rated at 30V VDS with an exceptionally low typical on-state resistance of 3.0 mΩ, housed in a compact 8-pin PG-TDSON-8-1 (SuperSO8) surface-mount package. It is engineered to deliver continuous drain current of 21A at Ta (or 100A at Tc=25°C) with low gate charge and ultra-low gate and output charge for fast switching transitions. Per the manufacturer datasheet, the device dissipates 2.5W at Ta and up to 69W at Tc, with a maximum junction temperature of 150°C. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source when a sufficient gate-source voltage (VGS) is applied. N-channel MOSFETs are the dominant switch topology in synchronous buck converters, low-side switches in half-bridges, and OR-ing/load-switch circuits because their lower on-resistance per unit area compared to P-channel devices minimizes conduction loss. Within the broader semiconductor taxonomy, this part belongs to: MOSFET -> power MOSFET -> discrete semiconductor -> power management component. Key differentiating features include the 3 mΩ max RDS(on) at VGS=10V (per the Infineon datasheet title description), a thermally efficient PG-TDSON-8 exposed-pad package, and operation from -55°C to +150°C junction. The OptiMOS 3M family is specifically tuned for synchronous rectification in switched-mode power supplies (SMPS) where both low conduction loss and low switching loss matter. Its figure of merit (FOM = RDS(on) × Qg) places it among the most efficient 30V parts available. Architecturally, the device uses trench MOSFET technology with a vertical drain structure on the PG-TDSON-8 exposed-pad leadframe. The exposed thermal pad (pin 1 / drain tab) provides direct heat sinking to the PCB copper, enabling the 69W Tc dissipation figure when properly mounted to adequate copper area. Typical applications include synchronous rectification in server and telecom VRMs, DC-DC converter high-side and low-side switches, hot-swap / OR-ing circuits in networking equipment, and motor drive half-bridges in 12V battery systems. The 30V rating provides ample headroom for 12V bus rails with transient tolerance. When designing with this MOSFET, ensure the gate drive voltage reaches at least 4.5V (logic-level threshold) and the PCB copper area beneath the exposed pad is sized to keep junction temperature below 125°C under worst-case load. Use a gate resistor in the 10-47Ω range to control switching ringing and EMI. This page synthesizes distributor pricing, drop-in alternatives in the same PG-TDSON-8 footprint, and practical design notes not found in the manufacturer datasheet alone.
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC030N08NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, rated at 80 V drain-to-source voltage and 100 A continuous drain current (Tc), with a maximum on-resistance of 3.0 mΩ at 10 V VGS, housed in a SuperSO8 (PG-TDSON-8-7) 5x6 mm surface-mount package. The device is engineered for high-frequency synchronous rectification and switching converter applications where it delivers up to 44% reduction in output capacitance and 44% reduction in RDS(on) versus the previous generation. The combination of 100 A continuous current capability and an ultra-low figure-of-merit (RDS(on) × Qg) supports highest system efficiency, reduced switching and conduction losses, and less paralleling. A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in switched-mode power supplies, motor drives, and battery protection circuits. Within the broader component taxonomy it sits as a subtype of field-effect transistor (FET) → transistor → discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform optimized for low-voltage, high-current applications such as 48 V telecom rails, server DC-DC converters, and automotive high-current loads. Key differentiating features of the BSC030N08NS5 include 3.0 mΩ maximum on-resistance at VGS=10 V, an ID max rating of 100 A (Tc) with 161 A pulsed capability per the Infineon family datasheet, low voltage overshoot during switching transients, and a 2.5 W power dissipation rating on the standard 1.5 mm FR4 reference PCB (139 W on the case). The device supports 12 V standard gate-drive logic and is suitable for high-side and low-side positions in half-bridge, full-bridge, and buck/boost topologies. At the architectural level, the OptiMOS 5 cell structure reduces gate charge Qg and miller plateau charge Qgd compared with prior generations, lowering switching losses at high di/dt. The 5x6 mm SuperSO8 land pattern offers a thermal resistance compatible with direct copper cooling on standard PCB designs, and the package's low-inductance source connection enables cleaner switching waveforms at multi-hundred-kHz operation. Typical applications include synchronous rectification in 48 V to point-of-load converters, server and telecom DC-DC stages, battery management protection MOSFETs in 12 V/24 V/48 V systems, hot-swap controllers, motor-drive H-bridges, and high-current load switches in industrial automation. In these roles, the BSC030N08NS5ATMA1 acts as the synchronous rectifier that replaces the lossy Schottky diode, dramatically improving light-load and full-load efficiency. Designers should observe the absolute maximum ratings carefully: VDS=80 V, VGS=±20 V (transient), ID=100 A continuous at TC=25 °C with appropriate PCB copper area, and TJ max of 150 °C. Operating above 50 °C case temperature requires derating per the datasheet Diagram 2. A low-ESR gate-drive loop, a 10 Ω gate resistor, and adequate VGS decoupling are recommended for clean switching in multi-MHz designs. This page synthesizes distributor pricing as of 2026-09-11, drop-in alternatives sourced from the Infineon OptiMOS 5 family and authorized cross-references, and practical design notes not found in the manufacturer datasheet alone.
BSC032N04LSATMA1 - 40V 3.2mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC032N04LSATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 40V platform, offering a maximum drain-source voltage of 40V, continuous drain current of 21A (Ta) / 98A (Tc), and an industry-leading ultra-low on-resistance of 3.2 mΩ maximum at 10V VGS. It is housed in a SuperSO8 5x6 (PG-TDSON-8-6) surface-mount package with an exposed drain pad for low thermal resistance. What is an N-channel power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify DC-DC, motor-drive, and load-management signals. N-channel variants conduct between drain and source when a positive gate voltage is applied, and within the broader hierarchy they belong to discrete semiconductors, then to transistors, and finally to active electronic components. OptiMOS 5 is Infineon's fifth-generation 40V trench MOSFET process, optimized for ultra-low RDS(on) and low gate charge to minimize conduction and switching losses. Key features of the BSC032N04LSATMA1 include 3.2 mΩ max RDS(on) at VGS=10V, 52W maximum power dissipation at Tc=25°C, and a SuperSO8 package with a Kelvin-source connection that suppresses gate-loop inductance for cleaner switching waveforms. The part is rated for operation from -55°C to +175°C junction temperature and is fully RoHS compliant with lead-free (Pb-free) terminal plating. The OptiMOS 5 cell geometry uses a deep-trench structure with a refined epi profile, achieving lower figure-of-merit (FOM = RDS(on) × Qg) than earlier OptiMOS generations. This directly reduces switching losses in hard-switched topologies and conduction losses in synchronous-rectification positions, where the part typically replaces Schottky diodes for higher efficiency. Typical applications include synchronous rectification in switched-mode power supplies (SMPS) for servers, desktops and telecom bricks, OR-ing and hot-swap controllers in 12V/24V distributed-power systems, motor-drive H-bridges for 12V brushless DC fans and small pumps, and battery-protection circuits in power tools and e-bikes. The 40V drain rating provides generous headroom above 12V and 24V nominal rails. When designing with this MOSFET, always observe the SOA (safe operating area) curve provided in the datasheet at the intended VDS, ID, and pulse duration. A 10V VGS drive is recommended for full RDS(on) performance; lower gate voltages will significantly raise conduction loss. Use the exposed pad as the primary thermal path. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving procurement and design engineers a single-source reference for the BSC032N04LSATMA1.
BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon
The Infineon BSC033N08NS5SCATMA1 is an 80 V N-channel MOSFET built on Infineon's OptiMOS 5 technology, housed in the PG-WSON-8-2 (SuperSO8 DSC) package with dual-side cooling capability. It delivers 144 A continuous drain current (Tc) with a maximum drain-source on-resistance of 3.3 mOhm at VGS=10 V and a power dissipation of 136 W (Tc). The part is optimized for high-current, low-loss switching in space-constrained power-conversion stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used in switching power supplies, motor drives, and load management. It belongs to the broader hierarchy of discrete power semiconductors (MOSFET -> transistor -> semiconductor -> electronic component) and is the workhorse of synchronous rectification and DC-DC conversion. Low on-resistance (RDS(on)) translates directly into lower conduction losses, higher efficiency, and reduced thermal stress. Key features of the BSC033N08NS5SCATMA1 include 3.3 mOhm typical RDS(on) at VGS=10 V, an ultra-low RthJC of 0.86 K/W thanks to dual-side cooling, 100% avalanche-tested ruggedness, and a logic-level gate threshold compatible with 10 V drive. The SuperSO8 DSC footprint exposes both top and bottom thermal paths, enabling PCB layouts that sink heat through the drain tab and through the source pins simultaneously. The OptiMOS 5 trench process minimizes gate charge (Qg) and output capacitance (Coss), reducing switching losses at high frequencies. Combined with the 80 V drain-source rating, the device targets 48 V bus telecom, eMobility, and industrial SMPS applications where both efficiency and power density are critical. Typical applications include synchronous rectification in 48 V telecom DC-DC converters, hot-swap and OR-ing controllers in server power distribution, motor-drive H-bridges for power tools and e-bikes, and battery protection in industrial UPS systems. The wide safe operating area and avalanche rating make it well-suited for harsh environments with inductive loads. Designers should pay attention to PCB layout: the SuperSO8 DSC package requires thermal vias beneath the exposed pad and a copper pour on both sides of the board to leverage the dual-cooling advantage. Gate-drive design must respect the maximum VGS rating of +/-20 V; a dedicated gate-driver IC such as the EiceDRIVER family is recommended over a microcontroller GPIO for switching frequencies above 100 kHz.
BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon
The Infineon BSC034N06NSATMA1 is an N-channel 60 V OptiMOS 5 power MOSFET rated for 100 A continuous drain current at 25C case temperature, housed in the source-down SuperSO8 (PG-TDSON-8-7) 5x6 mm package. It delivers a maximum on-resistance of 3.4 mOhm at VGS=10 V and is designed for high-efficiency switching conversion in compact form factors. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used for power conversion and amplification. N-channel MOSFETs conduct current when a positive gate-source voltage is applied. They are the foundational building block of synchronous buck converters, half-bridges, and full-bridges in switched-mode power supplies (SMPS). Within power electronics taxonomy, the BSC034N06NSATMA1 belongs to the discrete semiconductor hierarchy: MOSFET -> power MOSFET -> discrete semiconductor. Key features include ultra-low RDS(on) of 3.4 mOhm at VGS=10 V, integrated Schottky-like monolithic body diode optimized for low Qrr, and a source-down package that shifts the die thermal path directly to the PCB for superior cooling. The OptiMOS 5 technology achieves an outstanding figure-of-merit (FOM = RDS(on) x Qg), reducing both conduction and switching losses. The SuperSO8 (PG-TDSON-8-7) package exposes the source potential on the bottom of the die, allowing PCB copper to act as the primary heatsink. Combined with the OptiMOS 5 process, this enables higher continuous current, faster switching, and improved avalanche robustness in telecom, server, and automotive 48V applications. Typical applications include DC-DC converters in server and telecom 48V bus systems, motor drives for e-mobility and robotics, battery management and protection in lithium-ion packs, synchronous rectification in telecom bricks, and hot-swap switches on 12V and 24V distribution rails. When designing with this device, ensure VGS is driven to 10 V for full RDS(on) rating. Gate drive resistors of 5-10 ohm are recommended to control ringing; a small gate-source pull-down of 10-100 kOhm prevents inadvertent turn-on in half-bridge topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for engineers evaluating OptiMOS 5 in 60V systems, complementing the manufacturer datasheet with comparison data and decision guidance.
BSC035N04LSGATMA1 - 40V 100A 3.5mΩ OptiMOS 3 N-MOSFET | Infineon
The Infineon BSC035N04LSGATMA1 is an N-channel OptiMOS 3 power MOSFET rated at 40 V drain-source voltage, 100 A continuous drain current (Tc), and an ultra-low 3.5 mΩ maximum on-resistance, housed in a surface-mount PG-TDSON-8-1 package. It is part of Infineon's OptiMOS 3 family, which uses advanced trench technology to achieve a Figure of Merit (FOM) that minimizes conduction and switching losses in 40 V applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate electrical energy. The N-channel variant conducts when a positive gate-source voltage is applied, and the 40 V class sits in the sweet spot for low-voltage, high-current systems: 12 V and 24 V rails, USB Power Delivery, motor drives, and synchronous rectification in switched-mode power supplies. Within the power MOSFET family, low-voltage trench MOSFETs like this one sit below 100 V MOSFETs and far below IGBTs, and they dominate wherever switching frequency, RDS(on), and thermal performance matter more than blocking voltage. Key features include 3.5 mΩ maximum RDS(on) at VGS=10 V, 100 A continuous drain current at case temperature, 2.5 W power dissipation at TA=25°C rising to 69 W at Tc=25°C, and an operating junction temperature range of -55°C to +150°C. The PG-TDSON-8-1 package with exposed drain pad keeps the junction-to-case thermal resistance low, which is critical because the device can dissipate tens of watts in synchronous rectification or hot-swap roles. The device uses Infineon's third-generation OptiMOS trench process, which integrates a Schottky-like monolithically integrated body diode option on later variants and offers very low gate charge (Qg) for fast switching. The result is a part that delivers high efficiency at high switching frequencies in SMPS, BLDC motor drives, and battery protection circuits. Typical gate threshold is around 1.7 V, with the device fully enhanced at 10 V VGS. Typical applications include synchronous rectification in 12 V DC-DC buck converters, hot-swap and OR-ing controllers on 24 V industrial backplanes, eFuse and battery protection in 4S-8S lithium packs, BLDC motor drive low-side switches, and USB PD load switches. The PG-TDSON-8-1 footprint is widely accepted by Infineon's reference designs and most third-party power-conversion evaluation boards. When designing with the BSC035N04LSGATMA1, ensure the gate drive swings to 10 V for full enhancement, place the gate resistor close to the IC to control ringing, and provide sufficient copper area on the drain pad for thermal dissipation. Because of its low RDS(on), this part is preferred where conduction losses dominate; if switching losses dominate at very high frequencies, consider Infineon's newer OptiMOS 5 40 V family instead. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC035N10NS5ATMA1 - 100V 3.5mOhm N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC035N10NS5ATMA1 is a 100V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, delivering a maximum drain-source on-resistance (RDS(on)) of 3.5 mOhm and continuous drain current of 100A (Tc) in a SuperSO8 (PG-TDSON-8-7) 5x6 mm surface-mount package. Optimized for synchronous rectification and high-frequency switching, the device reduces output capacitance by up to 44% and RDS(on) by up to 43% versus the previous generation, enabling higher system efficiency, lower switching and conduction losses, and higher power density. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching device in modern switched-mode power supplies, motor drives, and DC-DC converters. Within the power semiconductor family, N-channel enhancement MOSFETs are the most common, sitting in the hierarchy as MOSFET -> FET -> transistor -> discrete semiconductor. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET platform, pushing the figure of merit (FOM = RDS(on) x Qg) downward to enable higher switching frequencies and lower total losses. Key benefits of this part include 2.5W power dissipation at TA=25C and 156W at Tc=25C, a logic-level compatible gate drive, and superior thermal resistance via the SuperSO8 exposed pad. It is engineered for high-side and low-side synchronous rectification in switched-mode power supplies, where low RDS(on) directly reduces conduction losses and high dv/dt immunity reduces ringing and EMI. Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, high-frequency buck/boost converters in computing and telecom, hot-swap and OR-ing circuits in server PSUs, motor drive half-bridges in 24V industrial systems, and USB-PD / Type-C adapters requiring high efficiency. The wide 100V rating also gives ample margin in 24V and 48V bus systems with inductive transients. When designing with the BSC035N10NS5, place the gate-drive resistor (typically 10 Ohm) close to the gate pin to suppress parasitic turn-on, and provide a Kelvin source connection to the exposed pad on pin 1 for accurate current sensing. Use the smallest possible gate-drive loop and keep the source-pad copper pour thermally massive to maximize heat extraction. This page combines distributor pricing, datasheet specifications, drop-in alternatives, and practical design notes not always visible on the manufacturer's product brief.
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
The Infineon BSC036NE7NS3GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 platform, rated for 75 V drain-source voltage and 100 A continuous drain current (Tc) in a compact PG-TDSON-8-7 surface-mount package. It delivers an industry-leading 3.6 mOhm maximum on-resistance at VGS = 10 V and total power dissipation up to 156 W with a 31 C/W junction-to-case thermal resistance. An N-channel MOSFET is a voltage-controlled semiconductor switch in which applying a positive gate-source voltage above the threshold (typically 1-3 V) creates an inversion-layer conduction channel between drain and source. Within the broader component taxonomy, a power MOSFET belongs to the discrete semiconductor > transistor > MOSFET family, used as the primary switching element in power conversion stages such as synchronous buck converters, motor drives, and hot-swap controllers. Infineon's OptiMOS 3 technology targets high-frequency, high-current density applications where low conduction and switching losses are critical. Key features include a low on-state resistance of 3.6 mOhm max at 10 V VGS, fast switching for high-frequency converters up to 1 MHz, an integrated gate-source protection Zener (ESD protection), and an exposed pad (EP) for direct PCB thermal coupling. The PG-TDSON-8-7 outline keeps the source current path symmetrical and minimizes package parasitic inductance, enabling clean switching edges in multi-MHz power stages. The 31 C/W junction-to-case thermal resistance supports high continuous current loading, while the small 5x6 mm footprint allows 30 A/inch^2 power stage density. OptiMOS 3 also reduces gate charge (Qg typ ~ 45 nC) which directly lowers switching losses in hard-switched topologies. For server and telecom 48 V input stages, automotive 24 V buck converters, and high-current load switches, this part provides an industry-standard figure of merit (FOM = Rds(on) x Qg). Typical applications include synchronous rectification in 48 V server / telecom intermediate bus converters, solar inverter power stages, motor drive half-bridges, hot-swap and OR-ing controllers, and battery management protection MOSFETs for 12 V/24 V/48 V systems. The wide 75 V VDS rating provides adequate derating margin below the standard 48 V bus. Design trade-off to remember: at high VIN the low Rds(on) is partially offset by switching losses; drive the gate with a 4.5-10 V driver to stay in full enhancement. Below 4.5 V VGS the device moves into the linear region, dissipating large power at high current.
BSC039N06NSATMA1 - 60V 3.9mΩ 100A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC039N06NSATMA1 is an N-channel OptiMOS 5 power MOSFET rated for 60 V VDS, 19 A continuous drain current at TA (100 A pulsed at TC), and a maximum on-resistance of 3.9 mΩ at 10 V VGS, housed in a surface-mount PG-TDSON-8-6 (TDSON EP 5x6) package. The device is part of Infineon's OptiMOS 5 60 V family, optimized for high-frequency, high-efficiency synchronous rectification and OR-ing applications in telecom, server, and industrial systems. A power MOSFET is a voltage-controlled, majority-carrier semiconductor switch that uses an insulated gate (here, a Si trench gate) to modulate the conduction channel between source and drain. OptiMOS 5 represents Infineon's 5th-generation 60 V trench process, which pushes the Figure of Merit (RDS(on) × Qg) substantially below previous generations. Within the power-management IC hierarchy, this part sits below the system-level PMIC and above the discrete diode/passive layer, serving as the synchronous rectifying switch in buck converters, the high-side switch in motor half-bridges, and the protection element in hot-swap/OR-ing circuits. Key features of the BSC039N06NSATMA1 include an ultra-low typical RDS(on) of 3.9 mΩ at VGS=10 V, a pulsed drain current of 100 A (TC-limited), 2.5 W power dissipation at TA, 69 W at TC, and an operating junction temperature range of -55°C to +150°C. The PG-TDSON-8-6 package provides an exposed-drain thermal pad (pin 1, 5, 6, 7, 8 internally bonded) for low RthJA, typically below 1°C/W with 1 in² of FR-4 copper. The gate is logic-level compatible down to 4.5 V VGS for direct MCU drive. Architecturally, the device uses a charge-balanced trench gate and a low-resistance substrate, achieving low on-state loss and excellent switching FOM. Compared to the OptiMOS 3 generation, RDS(on) is reduced by roughly 30% at the same die area, while Qgd and Qrr are significantly improved, allowing >100 kHz hard-switched operation. The device is 100% avalanche-tested (UIS) and is RoHS compliant. Typical applications include synchronous rectification in 48 V telecom and server DC-DC converters, hot-swap and OR-ing FETs in redundant power systems, motor drive half-bridges for 12 V/24 V BLDC fans and tools, and high-current USB-PD/eFuse protection paths. The wide SOA and low thermal impedance make it suitable for both continuous conduction and pulsed avalanche events. When designing with this part, always verify that the operating VDS stays below 60 V including transients, derate to 80% of pulsed current for repetitive loads, and minimize parasitic source inductance with Kelvin-source PCB layout. Use a gate driver with at least 1 A peak source/sink capability and a gate resistor in the 2-10 Ω range to control dV/dt-induced ringing. This page synthesizes distributor pricing (DigiKey, Mouser, Octopart), drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers an at-a-glance selection reference for the OptiMOS 5 60 V family.
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
The Infineon BSC040N08NS5ATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 80 V drain-source voltage and 100 A continuous drain current (Tc), with a maximum on-resistance of 4 mOhm, housed in a PG-TDSON-8-7 (SuperSO8 5x6) surface-mount package. It is engineered specifically for synchronous rectification in telecom and server power supplies, where switching loss and conduction loss directly determine overall converter efficiency. The "NS5" suffix denotes the OptiMOS 5 generation, which delivers a step-change reduction in gate charge and Figure of Merit versus prior OptiMOS 3 generations. A power MOSFET is a voltage-controlled three-terminal switch used to commutate current in switching power supplies, motor drives, and load-management circuits. The N-channel enhancement-mode variant (the dominant topology in modern SMPS) requires a positive gate-source voltage to turn on and conducts current from drain to source. Within the power-semiconductor hierarchy, MOSFETs sit alongside IGBTs and GaN FETs in the discrete-switch family, with silicon MOSFETs such as this OptiMOS 5 part dominating the sub-200 V, sub-100 A segment thanks to mature process technology, wide driver ecosystem, and excellent ruggedness. Key specifications of the BSC040N08NS5ATMA1 include 4 mOhm maximum RDS(on) at VGS = 10 V, an avalanche-rated 100 A continuous drain current at 25 C case temperature, 2.5 W power dissipation on a 1 in² FR4 PCB at 25 C, 104 W power dissipation with case-temperature control, and an operating junction temperature range from -55 C to +175 C. The PG-TDSON-8-7 package features an exposed drain tab that doubles as a thermal pad, allowing direct copper cooling through the PCB. Built on Infineon's advanced OptiMOS 5 trench process, the device achieves low figure-of-merit (FOM = RDS(on) × Qg) by combining a small die with optimized cell pitch. This makes the part equally attractive for high-frequency LLC resonant converters and hard-switched buck stages at 300 kHz to 1 MHz, where gate-drive losses and output charge dominate efficiency curves. The SuperSO8 5x6 footprint is JEDEC-standard, enabling drop-in PCB layout reuse across the OptiMOS 5 family. Typical applications include 48 V telecom bus synchronous-rectifier MOSFETs in isolated DC-DC converters, server CRPS and OCP power-supply secondary-side rectifiers, 24 V to 12 V buck converters for industrial automation, hot-swap and OR-ing circuits in distributed power, and high-current brushless-DC motor drivers. The low RDS(on) × Qg figure-of-merit also suits battery-management systems where conduction loss and switching loss together determine thermal rise. When designing with this part, ensure the gate-driver can source and sink the specified peak gate current and that a sufficiently low-impedance Kelvin connection is provided to the source pad (pin 2). For full 104 W dissipation, a heat spreader or direct case cooling is required; PCB copper alone will not sustain 100 A continuously without significant derating. This page synthesizes distributor stock data, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet alone, giving engineers a single consolidated reference for sourcing, comparing, and applying the BSC040N08NS5ATMA1.
BSC040N10NS5ATMA1 - 100V 100A N-Ch OptiMOS 5 MOSFET | Infineon
The Infineon BSC040N10NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 platform, rated at 100 V VDS max and 4 mOhm maximum on-resistance, packaged in the SuperSO8 5x6 outline (also referenced as PG-TDSON-8-7 / TDSON EP-8). It delivers up to 100 A continuous drain current at 25 C case temperature (and up to 136 A per the Infineon parametric page), with 2.5 W power dissipation at ambient and 139 W at case temperature, making it one of the lowest-RDS(on) parts in the 100 V class in this footprint. What is an N-channel power MOSFET? A metal-oxide-semiconductor field-effect transistor is the workhorse switching element of modern power electronics. The N-channel variant conducts when the gate is pulled above the source by VGS(th); for power applications, the MOSFET category encompasses low-voltage signal MOSFETs, standard MOSFETs, and high-power MOSFETs, the latter being the relevant hypernym for this part. Within discrete semiconductors, this device sits in the power MOSFET tier optimized for switching converters, motor drives, and synchronous rectification. Key features include the OptiMOS 5 technology generation, which delivers up to 44% output capacitance reduction and up to 43% RDS(on) reduction versus the previous generation, enabling higher switching frequencies and higher system efficiency. The part is optimized for synchronous rectification in switched-mode power supplies, where it serves as the low-side FET. Its low Qg and Qgd support fast turn-on/turn-off transitions, reducing switching losses and allowing designers to shrink magnetics. Typical applications include synchronous rectification in 48 V telecom and server DC-DC point-of-load converters, primary-side switching in telecom bricks, motor drive half-bridges in industrial and automotive 12 V/24 V systems, hot-swap and OR-ing circuits, and battery protection in e-mobility. The part is automotive-grade qualified (AEC-Q101 family), making it suitable for body electronics and powertrain peripherals. When designing with this device, ensure the gate driver can source/sink sufficient peak current to quickly charge Qg and avoid linear-region losses during switching transitions. Thermal management is critical: at high continuous current, use multiple thermal vias under the exposed pad and adequate copper pour on both top and inner layers. This page synthesizes distributor pricing, same-package drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping procurement and design engineers evaluate the BSC040N10NS5ATMA1 for production.
BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon BSC042NE7NS3GATMA1 is a 75V N-channel power MOSFET from the OptiMOS 3 family, delivering industry-leading 4.2 mOhm maximum on-state resistance with continuous drain current ratings up to 100 A (Tc) in the compact PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. Designed specifically for synchronous rectification in switched-mode power supplies, the part combines ultra-low RDS(on) with superior switching performance optimized at 80V technology node. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source terminals. The OptiMOS 3 family represents Infineon's third-generation trench MOSFET platform optimized for low conduction loss and fast switching; it sits within the broader taxonomy of power MOSFET -> discrete semiconductor -> power management. This category is the workhorse of modern DC-DC conversion, motor drive, and hot-swap circuits, where every milliohm of RDS(on) translates directly into watts of conduction loss dissipated as heat. Key electrical characteristics include 4.2 mOhm max RDS(on) at VGS=10V, 75V drain-source breakdown voltage, 19A continuous drain current at ambient (Ta) and 100A at case temperature (Tc), with 2.5W (Ta) and 125W (Tc) power dissipation ratings. The gate threshold is typically 1.7V with VGS ratings of +/-20V maximum. The part integrates an intrinsic body diode optimized for synchronous rectification dead-time conduction, eliminating the need for an external anti-parallel diode in most buck/boost topologies. Architecturally, the device uses Infineon's advanced 80V trench technology shrunk to a 75V rating, delivering simultaneously lowest on-state resistance and superior switching performance. The cell density and gate structure minimize both conduction and switching losses, making it ideal for high-frequency (300 kHz to 1 MHz) SMPS applications. The PG-TDSON-8-1 package provides an exposed drain pad that doubles as the thermal dissipation path, enabling low thermal resistance (approximately 1.0 C/W junction-to-case). Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, high-current buck regulators in computing and graphics cards, motor drive and H-bridge circuits, hot-swap and OR-ing controllers in redundant power systems, and battery management for e-mobility and power tools. The wide safe operating area also suits Class-D audio amplifier output stages. When designing with this MOSFET, place the gate driver within 5mm of the gate pin to minimize parasitic inductance, and use a 10 ohm gate resistor to control ringing. Ensure Tj stays below 150C by sizing the PCB copper pour; at 100A continuous, even 4.2 mOhm dissipates 42W that must flow through the exposed pad into the PCB heatsink. This page synthesizes Infineon datasheet parameters, distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon
The Infineon BSC047N08NS3GATMA1 is an N-channel power MOSFET built on the OptiMOS™ 3 platform, rated for 80 V drain-to-source voltage, 100 A continuous drain current (Tc), and a maximum on-resistance of 4.7 mOhm, housed in the SuperSO8 5x6 (PG-TDSON-8-1) surface-mount package. It is optimized for high-frequency switching and synchronous rectification, combining very low RDS(on) with an excellent gate-charge x RDS(on) figure of merit (FOM) that minimizes conduction and switching losses in DC/DC converters. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to switch and amplify signals in power electronics. The N-channel enhancement mode variant conducts when a positive gate-source voltage is applied. Within the broader taxonomy, this part sits at: power MOSFET → discrete semiconductor → transistor → electronic component. MOSFETs are the workhorse of modern switch-mode power supplies (SMPS), motor drives, and battery protection circuits, where their low on-resistance and fast switching translate directly into higher system efficiency and smaller magnetics. Key features of the BSC047N08NS3GATMA1 include a typical RDS(on) of 4.7 mOhm at VGS=10 V, superior thermal resistance thanks to the exposed SuperSO8 pad, normal-level gate threshold for standard logic drive, 100% avalanche tested ruggedness, and Pb-free plating that is RoHS compliant plus halogen-free per JEDEC qualification. The SuperSO8 outline is pin-compatible with industry-standard SO-8 power packages, enabling drop-in upgrades in legacy boards. Architecturally, the OptiMOS™ 3 generation uses a trench-gate cell design that shrinks the channel length and increases cell density, dropping RDS(on) by roughly 30% compared with the prior OptiMOS™ 2 generation at the same die size. The intrinsic body diode is characterized for synchronous-rectifier duty, so the part can replace external Schottky diodes in many buck and forward converter topologies. Gate charge is balanced against output capacitance to keep switching losses low at 300 kHz to 1 MHz operation. Typical applications include high-frequency DC/DC converters in server and telecom SMPS, synchronous rectification in isolated DC/DC bricks, solar micro-inverter power stages, and 48 V eMobility / mild-hybrid accessory rails. The combination of 80 V rating and 100 A current capability also makes it suitable for hot-swap controllers, OR-ing FETs, and battery management protection MOSFETs in multicell Li-ion packs. In each case the low FOM directly improves light-load and full-load efficiency. When designing with this MOSFET, ensure the gate driver can supply and sink the gate charge within the target switching frequency. A 10 Ohm gate resistor is usually sufficient to damp ringing; thermal layout must include at least 6 cm² of drain copper on a 40 x 40 x 1.5 mm FR4 board to reach the datasheet 125 W Tc rating. Always observe the maximum junction temperature of 175 °C and apply appropriate derating for ambient operation above 25 °C. This page synthesizes distributor pricing from DigiKey and Mouser, parametric comparisons versus cross-brand drop-in equivalents in the same SuperSO8 footprint, and practical design notes not consolidated in the manufacturer datasheet, providing engineers with a single reference for selection, sourcing, and board-level implementation.
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
The Infineon BSC0501NSIATMA1 is an N-Channel 30 V OptiMOS 5 power MOSFET rated at 29 A continuous drain current (Ta) and 100 A pulsed (Tc), packaged in the compact 8-pin PG-TDSON-8-6 (SuperSO8/CanPAK equivalent) surface-mount footprint with 2.5 W power dissipation at Ta and 50 W at Tc. It belongs to Infineon's OptiMOS 5 25V/30V family, which sets the benchmark for power density and energy efficiency in both standby and full-load operation by combining ultra-low RDS(on) with minimized gate charge and switching losses. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to efficiently route or modulate current in power-conversion circuits. It sits within the broader hierarchy of discrete semiconductors > transistors > MOSFETs > power MOSFETs, and serves as the synchronous switch in DC-DC converters, the low-side switch in motor drivers, and the load-disconnect element in battery protection. OptiMOS 5 specifically targets high-frequency synchronous buck conversion, where the lowest figure of merit (FOM = RDS(on) × Qg) directly translates into reduced switching losses and higher system efficiency. Key differentiating specifications include an extremely low typical on-resistance that maximizes conduction efficiency at 30 V operation, an ultra-low gate charge that minimizes driver losses at high switching frequencies, and an optimized body diode that reduces reverse-recovery losses in synchronous-rectifier topologies. The PG-TDSON-8-6 package exposes the die to a low thermal-resistance pad, allowing 50 W dissipation when properly soldered to a 1 oz copper thermal land, which is essential for keeping the junction temperature within safe limits at full load. The BSC0501NSIATMA1 uses Infineon's advanced trench-gate OptiMOS 5 process, which combines a refined cell pitch with a low-resistance source metallization to deliver industry-leading figure-of-merit performance. The device is characterized for avalanche operation, has an operating junction temperature range of -55°C to +150°C, and is qualified to JEDEC standards for plastic-package surface-mount reliability, making it suitable for demanding automotive and industrial environments. Typical applications include synchronous-rectifier stages in point-of-load (POL) DC-DC converters for servers and telecom, low-side switches in 24 V industrial motor control, battery-management load switches in 12 V automotive subsystems, and USB Power Delivery (PD) buck-converter high-side FETs. The 30 V drain rating provides comfortable margin for 12 V input rails subject to load-dump transients up to ~35 V. When designing with this MOSFET, prioritize minimizing parasitic source-inductance by using short, wide copper pours on the source pads, and ensure the gate driver can source/sink the peak gate current required at the intended switching frequency. Place a 100 nF ceramic bypass capacitor close to the gate to decouple the high di/dt loop and prevent unwanted ringing. Compared to a standard level-shift MOSFET, the OptiMOS 5 family dramatically reduces dead-time and reverse-conduction losses in half-bridge topologies.
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
The Infineon BSC0502NSIATMA1 is an N-channel power MOSFET built on the OptiMOS 5 process, rated for 30 V VDS, 100 A continuous drain current, and a maximum on-resistance of 2.3 mOhm, packaged in the PG-TDSON-8 (SuperSO8 5x6) surface-mount footprint. It targets high-current synchronous-rectifier and load-switch applications where low conduction loss, low gate charge, and small footprint matter most. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor drive, and load management. As an N-channel enhancement-mode device, BSC0502NSIATMA1 turns on when VGS exceeds its gate threshold. The OptiMOS 5 family from Infineon represents the fifth-generation trench MOSFET platform, positioned within the broader hierarchy of discrete semiconductors and power MOSFETs. Key specifications include 2.3 mOhm maximum RDS(on) at VGS = 10 V, a 9.0 nC typical gate charge (0V to 4.5V), and 13.5 nC output charge QOSS. These figures translate directly to low conduction loss at high current, low switching loss in high-frequency converters, and excellent soft-start behavior. The device handles 100 A continuous drain current at TC and 26 A at TA, making it well suited for both thermal-limited and ambient-cooled layouts. The PG-TDSON-8 SuperSO8 package exposes a large source pad that doubles as a thermal pad, giving the part very low thermal resistance from junction to PCB. This allows designers to sink tens of watts of dissipation through copper pours without an external heatsink, simplifying PCB layout. Typical applications include synchronous rectification in 12 V buck converters for server, telecom, and GPU VR rails, hot-swap and OR-ing circuits in redundant power supplies, battery management and protection in e-mobility and power tools, and motor drive in low-voltage brushless DC fans and pumps. The 30 V rating also makes it appropriate for USB-PD sink/source paths and 24 V industrial bus switches. When designing with this part, place gate-drive decoupling within 5 mm of the gate pin and use a 10 kohm gate-source resistor to prevent parasitic turn-on during high dV/dt switching events. Keep the source-sense path tight to avoid Rds_on inflation from package inductance. This page consolidates distributor pricing, drop-in alternatives in the same PG-TDSON-8 footprint, and practical layout guidance drawn from manufacturer datasheets and reference designs.
BSC0504NSIATMA1 - 30V 21A N-MOSFET | Infineon | Power Switching
Infineon BSC0504NSIATMA1 is an N-channel power MOSFET rated for 30 V, with continuous drain current of 21 A at case temperature Ta and 72 A at Tc, and power dissipation of 2.5 W at Ta and 30 W at Tc. It uses an OptiMOS 5 30 V architecture in the surface-mount PG-TDSON-8-6 package. The verified distributor data identifies it as a single N-channel MOSFET designed for high-efficiency power switching. A power MOSFET is a voltage-controlled transistor used to switch or conduct current in power-conversion and motor-control circuits. The N-channel designation means conduction occurs between its drain and source terminals when a positive gate-to-source voltage is applied. Within the hierarchy, the device belongs to the MOSFET family, the broader transistor category, and the power-semiconductor product class. Its low-voltage, high-current construction targets applications requiring compact switching stages and low conduction losses. The verified headline ratings include a 30 V drain-to-source rating, 21 A at Ta, 72 A at Tc, 2.5 W dissipation at Ta, and 30 W at Tc. The package is identified by distributor listings as PG-TDSON-8-6, a surface-mount package with an exposed-pad description in the marketplace record. The part is associated with Infineon’s OptiMOS 5 25 V and 30 V product family, which is aimed at high power density and energy efficiency. BSC0504NSIATMA1 is intended for applications such as synchronous rectification, DC-DC conversion, load switching, and power-management circuits. The 30 V class makes it suitable for low-voltage rails and point-of-load designs where a compact N-channel switch is required. Because the supplied data confirms the package identity and current/power ratings but does not provide a complete datasheet table, parameters such as on-resistance, gate charge, threshold voltage, and thermal resistance require separate datasheet verification. Designers should verify the complete manufacturer datasheet before selecting the part for a particular gate-drive voltage, switching frequency, or thermal layout. The exposed-pad package and the substantial difference between Ta and Tc ratings indicate that PCB copper, thermal vias, and system cooling can strongly affect achievable load current. Current and power values should therefore be interpreted according to the manufacturer’s application conditions rather than as unrestricted universal limits. This page combines verified distributor specifications, official Infineon datasheet access, pricing and stock information, drop-in-comparison guidance, and practical design notes. It is intended to support component identification and preliminary engineering evaluation while clearly separating verified values from parameters that still require datasheet confirmation.