BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
Артикул: BSC027N10NS5ATMA1 ✗ Снят с производства| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.15 | $21,50 |
| 100 | $1.82 | $182,00 |
| 500 | $1.55 | $775,00 |
| 1.000 | $1.32 | $1.320,00 |
| 5.000 | $1.1 | $5.500,00 |
BSC027N10NS5ATMA1 Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used to switch or amplify power in electronic circuits. N-channel MOSFETs are the dominant choice for low-side and high-side switching because their majority carriers (electrons) offer lower on-resistance per unit silicon area than P-channel equivalents. Within the discrete semiconductor hierarchy, MOSFETs sit under transistors, then power semiconductors, then discrete semiconductors.
Key specifications include 2.7 mOhm maximum RDS(on) at VGS=10V, 100V drain-source breakdown, 194A pulsed ID (Tc), and a power dissipation rating of 3W (Ta) / 214W (Tc) with the exposed pad soldered to a 1 sq-inch copper pour. The SuperSO8 footprint offers a Kelvin-source connection at pin 4 that removes the source-bond wire resistance from the gate-drive loop, improving switching performance at high di/dt.
OptiMOS 5 uses Infineon's latest trench-cell architecture, reducing figure-of-merit (FOM = RDS(on) x Qg) versus OptiMOS 3 by roughly 40 percent. This enables either higher efficiency at the same frequency or smaller magnetics at the same efficiency, both of which are decisive in 48V telecom buses, server VRMs, and solar micro-inverters.
Typical applications include synchronous rectification in 48V DC-DC converters, hot-swap and OR-ing circuits in server CRPS power shelves, motor drive half-bridges, and battery protection in e-mobility. The 100V rating provides ample margin for 48V nominal rails and industrial 72V transient environments.
Designers should minimize parasitic source inductance to exploit the Kelvin pin and must verify the PCB copper area meets the 214W Tc dissipation envelope. The AEC-Q101-qualified version (BSC027N10NS5) is preferred for automotive environments.
This page consolidates distributor pricing, drop-in compatible alternatives, and engineering guidance not found in the standalone datasheet, giving procurement and design teams a single source for evaluation.
Аналоги без доработки для BSC027N10NS5ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с BSC027N10NS5ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Power Dissipation (Tc).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
BSC100N10NSFGATMA1
✅ Прямая замена✓ В наличии
$1.49 / шт.
Открыть даташит →BSC040N08NS5ATMA1
✅ Прямая замена✓ В наличии
$1.15 / шт.
Открыть даташит →BSC033N08NS5SCATMA1
✅ Прямая замена✓ В наличии
$0.62 / шт.
Открыть даташит →BSC118N10NSGATMA1
✅ Прямая замена✓ В наличии
$0.78 / шт.
Открыть даташит →BSC146N10LS5ATMA1
✅ Прямая замена✓ В наличии
$0.74 / шт.
Открыть даташит →BSC0902NSATMA1
✅ Прямая замена✓ В наличии
$0.78 / шт.
Открыть даташит →BSC042NE7NS3GATMA1
✅ Прямая замена✓ В наличии
$1.24 / шт.
Открыть даташит →BSC011N03LSATMA1
✅ Прямая замена✓ В наличии
$0.54 / шт.
Открыть даташит →BSC027N10NS5ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 |
| Technology | OptiMOS 5 (100V) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta | 23 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| Pulsed Drain Current (IDM) | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm |
| Power Dissipation (Ta) | 3 W |
| Power Dissipation (Tc) | 214 W |
| Корпус | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |
Конфигурация выводов BSC027N10NS5ATMA1
| Контакт 1 | Gate 1 — Gate of half-bridge FET 1 |
| Контакт 2 | Source 1 — Source of half-bridge FET 1 (low-side return) |
| Контакт 3 | Drain 1 — Drain of half-bridge FET 1 (switch node) |
| Контакт 4 | Source 1 (Kelvin) — Kelvin-source connection for gate-drive return |
| Контакт 5 | Gate 2 — Gate of half-bridge FET 2 |
| Контакт 6 | Source 2 — Source of half-bridge FET 2 (low-side return) |
| Контакт 7 | Drain 2 — Drain of half-bridge FET 2 (switch node) |
| Контакт 8 | Drain 2 — Drain of half-bridge FET 2 (alternate pin) |
Область безопасной работы (DC, TC=25C)
Типичное применение
BSC027N10NS5ATMA1 подходит для 6 применениеs: 48V Telecom Synchronous Rectification, Hot-Swap and OR-ing in Server CRPS, E-Mobility Battery Protection MOSFET, Solar Micro-Inverter Power Stage, Motor Drive Half-Bridge Switch, Industrial 72V Hot-Swap eFuse.
48V Telecom Synchronous Rectification
The BSC027N10NS5ATMA1 is well suited for 48V telecom synchronous rectification because its 100V VDS rating provides 30 percent derating above the 80V transient envelope, while its 2.7 mOhm RDS(on) at VGS=10V minimizes conduction loss at 30-50A continuous drain currents. The OptiMOS 5 trench technology reduces gate charge Qg versus OptiMOS 3, enabling switching frequencies of 100-200 kHz in LLC and full-bridge rectifiers. The Kelvin-source pin (pin 4) eliminates source-bond-wire inductance from the gate-drive loop, dramatically reducing switching loss and ringing at high di/dt. Placed on the secondary side of an isolated DC-DC converter with 10uF ceramic bypass and a gate-driver IC such as UCC27714, the part delivers peak efficiencies above 97 percent at 1-2 kW. Compared to a Schottky rectifier, it eliminates reverse-recovery charge Qrr entirely, removing a major EMI source.
Рекомендуется
Hot-Swap and OR-ing in Server CRPS
For server Common Redundant Power Supply (CRPS) hot-swap and OR-ing, the BSC027N10NS5ATMA1 provides safe inrush control during board insertion into a live 48V backplane. The 100V VDS rating covers 80V steady-state plus transient spikes up to 100V during hot-plug events, while the 2.7 mOhm RDS(on) keeps continuous conduction loss below 0.27W at 100A full load. The high pulsed drain current of 194A handles the inrush surge when bulk output capacitors charge through the FET. The Kelvin-source pin improves SOA performance during the linear-region turn-on. Use a hot-swap controller like LM5060 or TPS2490 to drive the gate with controlled dV/dt, and add a 10kV TVS such as SMAJ100A across drain-source for transient protection in the server rack environment.
Рекомендуется
E-Mobility Battery Protection MOSFET
In e-mobility battery management, the BSC027N10NS5ATMA1 serves as a low-side disconnect switch in 48V mild-hybrid battery packs. The 100V VDS provides headroom for inductive load dump transients from the motor, and the 100A continuous drain current at TC=25C handles 5-10 kW peak regen currents. The 2.7 mOhm RDS(on) at 50A continuous conduction means only 135 mV drop, preserving battery efficiency during cruise. Designers should select the AEC-Q101-qualified bare-die variant BSC027N10NS5 for production vehicles, while using the ATMA1 industrial suffix for prototypes. Pair with a battery management IC such as BQ76PL455A-Q1 for cell monitoring and add a 100uF electrolytic plus 10uF ceramic at the FET drain for transient suppression.
Рекомендуется
Solar Micro-Inverter Power Stage
The BSC027N10NS5ATMA1 fits solar micro-inverter power stages because the 100V VDS rating handles 60V panel Voc plus 20 percent safety margin, while the 2.7 mOhm RDS(on) minimizes conduction loss at the 30-50A continuous currents typical of 1-3 kW residential micro-inverters. The OptiMOS 5 low Qg reduces gate-drive losses at 50-100 kHz switching frequencies, allowing smaller planar magnetics that reduce BOM cost. The Kelvin-source pin enables clean switching in the H-bridge, reducing EMI that could otherwise fail FCC Class B conducted-emissions tests. Place the FETs in a totem-pole configuration with SiC Schottky anti-parallel diodes for reverse-recovery protection, drive with a TI UCC28C42 or comparable PFC/half-bridge controller.
Рекомендуется
Motor Drive Half-Bridge Switch
In industrial BLDC and servo motor drives, the BSC027N10NS5ATMA1 functions as the high-side or low-side switch in a three-phase half-bridge operating from a 48V or 72V DC bus. The 100V VDS rating provides comfortable margin over the 72V industrial bus nominal, while the 2.7 mOhm RDS(on) and 214W power dissipation at TC=25C handle 20-40A continuous phase currents. The PG-TSON-8-3 footprint keeps the inverter module compact, and the Kelvin-source pin reduces cross-conduction in the dead-time window. Drive the gates with Infineon's 6EDL04N02PR or 2ED21834S06JXUMA1 half-bridge gate driver, and add a 100V Schottky anti-parallel diode across drain-source for freewheeling currents that exceed the body-diode rating during hard switching.
Рекомендуется
Industrial 72V Hot-Swap eFuse
As an industrial eFuse in 72V factory automation and process-control backplanes, the BSC027N10NS5ATMA1 provides disconnect capability for plug-in I/O modules. The 100V VDS covers 72V steady-state plus inductive transients from adjacent relay coils, while the 2.7 mOhm RDS(on) at 10-20A continuous load dissipates less than 0.4W, eliminating the need for external heatsinking. The 194A pulsed drain current handles inrush when downstream bulk capacitance charges. Use a hot-swap controller with SOA protection such as TPS2660 or LTC4232 to drive the gate in the linear region during turn-on, then latch to fully-enhanced for steady-state. Add a PTC resettable fuse at the source for redundancy, and isolate the gate drive with an opto-coupler or digital isolator.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для BSC027N10NS5ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | BSC100N10NSFGATMA1 | BSC040N08NS5ATMA1 | BSC033N08NS5SCATMA1 | BSC118N10NSGATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-8-3 (SuperSO8 5x6) | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same | PG-TSON-8-3 (SuperSO8 5x6) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 80 V | 80 V | 100 V |
| RDS(on) Max @ VGS=10V | 2.7 mOhm | 10 mOhm | 4 mOhm | 3.3 mOhm | 11.8 mOhm |
| Continuous Drain Current (Tc=25C) | 100 A | 80 A | 100 A | 100 A | 100 A |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Power Dissipation (Tc) | 214 W | 139 W | 156 W | 167 W | 156 W |
Ключевые отличия
- Lowest RDS(on) in the Infineon 100V SuperSO8 family (против BSC118N10NSGATMA1)
- Higher VDS rating than 80V OptiMOS 5 family (против BSC040N08NS5ATMA1)
- OptiMOS 5 versus OptiMOS 3 efficiency (против BSC042NE7NS3GATMA1)
Заметки по проектированию
Estimated: at VDS=100V, ID=10A continuous, conduction loss is roughly 100W with 10 mOhm RDS(on), rising junction temperature above ambient by 100 x theta_JA. With the SuperSO8 PG-TSON-8-3 footprint and 1 square inch of 2-oz copper pour, theta_JA drops to roughly 35 C/W, yielding a 100C rise. A 2-3 inch copper pour with thermal vias under the exposed pad drops theta_JA below 25 C/W. The 214W Tc dissipation rating is only valid with the drain pad soldered to a 25C infinite heatsink; designers must derate for TA.
Use the Kelvin-source pin (pin 4) for the gate-drive return path. Connecting the gate-driver return to a power source inductance (the bond wire between pin 2 and the die) creates a feedback loop that slows switching and increases ringing. Route pin 4 directly to the gate-driver ground via a short, low-inductance trace. Place 10uF X7R ceramic bypass capacitors within 3 mm of the drain and source pads, and add a 100 nF Y-capacitor across gate-source to suppress high-frequency oscillation during hot-plug events.
Do not exceed the VGS rating of plus-or-minus 20V; gate voltage transients above this destroy the thin gate oxide. The 2.7 mOhm RDS(on) is specified at VGS=10V; at VGS=4.5V the on-resistance rises to roughly 4 mOhm (+48 percent), degrading efficiency. The body-diode reverse-recovery charge Qrr at high di/dt can cause catastrophic dv/dt turn-on in half-bridge topologies; always use an anti-parallel Schottky or SiC diode when freewheeling currents exceed 30 percent of ID.
Информация о соответствии
RoHS and REACH compliant per Infineon product page. The BSC027N10NS5ATMA1 industrial suffix is not AEC-Q100 qualified; the bare-die BSC027N10NS5 variant is AEC-Q101 qualified for automotive use.
