MOSFET-транзисторы
Товары (1294)
BSC093N15NS5 - 150V 9.3mΩ OptiMOS™5 N-Ch MOSFET | Infineon
The Infineon BSC093N15NS5 is a 150 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, offering an ultra-low RDS(on) of 9.3 mOhm maximum and a continuous drain current of 87 A (Tc) in the compact PG-TDSON-8 (SuperSO8 5x6) surface-mount package. The device is rated for 139 W power dissipation at case temperature and is designed for high-frequency, high-efficiency switching applications where both low conduction loss and fast switching are required. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between the drain and source terminals. OptiMOS™ 5 represents Infineon's fifth-generation 150 V platform, optimized for low FOM (Figure of Merit, the product of RDS(on) and total gate charge Qg) to minimize switching and conduction losses simultaneously. In the broader taxonomy, MOSFETs sit within discrete semiconductors, alongside IGBTs, diodes, and transistors, and are foundational to switching power conversion, motor control, and load management circuits. Key features include a 150 V drain-source breakdown voltage, 9.3 mOhm maximum on-resistance at VGS=10 V, low gate charge for reduced driver losses, and an integrated source-connected Kelvin-source pin configuration in the SuperSO8 5x6 package that lowers parasitic source inductance and improves switching performance at high di/dt. The PG-TDSON-8-7 footprint offers an exposed top-side coolable thermal pad, enhancing thermal transfer. The BSC093N15NS5 uses a trench-gate OptiMOS™ 5 cell architecture that delivers a low RDS(on)*Qg figure of merit, enabling reduced switching losses in hard-switched topologies and allowing operation at higher switching frequencies without the efficiency penalty seen in older planar MOSFET generations. Typical applications include telecom 48 V hot-swap and OR-ing circuits, solar inverters, low-voltage drives such as forklifts and e-scooters, server and datacom synchronous rectifiers, and industrial SMPS secondary-side rectification where high current handling and low conduction loss are required. When designing with this device, ensure that the gate drive voltage swings cleanly between 0 V and 10 V; partial gate enhancement increases RDS(on) and conduction loss. The exposed pad must be soldered to a sufficiently large copper area to keep the junction temperature within the 150 C maximum rating. This page synthesizes distributor stock and pricing data, parametric drop-in alternatives, and design notes not aggregated on any single manufacturer page, providing a one-stop engineering reference for the BSC093N15NS5.
BSC093N15NS5ATMA1 - 150V 9.3mΩ 87A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC093N15NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 150V technology platform, featuring a maximum drain-source voltage (VDS) of 150V, an ultra-low maximum on-resistance (RDS(on)) of 9.3 mΩ, and a continuous drain current (ID) of 87A at TC, packaged in the SuperSO8 5x6 (PG-TDSON-8-7) surface-mount form factor with a power dissipation rating of 139W at TC. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which a positive gate-source voltage creates a conducting channel between drain and source, enabling efficient high-frequency power conversion. In the broader taxonomy, a MOSFET belongs to the family of power transistors -> discrete semiconductors -> semiconductor devices. The OptiMOS 5 150V family from Infineon targets switched-mode power supply (SMPS) primary and secondary side switches, motor drives, and synchronous rectification where low conduction and switching losses are required to meet modern energy-efficiency standards. Key differentiating features of the BSC093N15NS5ATMA1 include a 9.3 mΩ maximum RDS(on) at VGS=10V, gate charge (Qg) optimized for high-frequency operation, low Figure-of-Merit (FOM = RDS(on) x Qg), and integrated protection against ESD and avalanche transients. The SuperSO8 5x6 footprint offers an exposed drain pad that provides superior thermal performance in a compact outline, while remaining pin-compatible with the industry-standard PowerPAK SO-8 footprint. Technically, the device uses Infineon's latest-generation trench MOSFET cell architecture with a 150V breakdown-optimized epitaxial layer, achieving a balance of low on-state loss and fast switching suitable for telecom rectifiers, DC-DC converters, and industrial motor drives operating in the 100V to 150V system rail range. The low FOM reduces both conduction loss during the on-state and switching loss during transitions, directly translating into higher converter efficiency and smaller magnetics. Typical applications include telecom 48V synchronous rectification, server and data-center DC-DC conversion, low-voltage forklift and e-scooter motor drives, telecom and solar power converters, and industrial SMPS. The wide safety margin between the 150V rating and 100V bus systems allows operation across transients in 48V telecom and 96V solar string architectures. Design considerations include adequate VGS drive voltage (10V typical for full RDS(on) specification), gate-drive loop layout optimization to minimize ringing, and thermal management via copper pours on the drain pad. Designers should also account for body-diode reverse recovery in synchronous-rectification topologies. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes not found in the manufacturer datasheet, enabling engineers to make faster sourcing and substitution decisions.
BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
The Infineon BSC094N06LS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 logic-level technology, rated for 60 V VDS, 9.4 mΩ maximum RDS(on), and 47 A continuous drain current at TC, in a SuperSO8 5x6 (PG-TDSON-8-6) surface-mount package. It is supplied on a 13-inch tape-and-reel carrier (ATMA1 suffix) and is qualified to -55 °C to +150 °C junction-temperature operation. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between source and drain terminals. The OptiMOS™ 5 family is Infineon's fifth-generation trench MOSFET platform engineered for switching power conversion; compared to planar MOSFETs of the same voltage class, OptiMOS 5 devices deliver lower RDS(on), lower gate charge (Qg), lower output charge (Qoss), and better Figure-of-Merit (FOM = RDS(on) × Qg), which translates directly into reduced conduction and switching losses. The "LS" in the part number denotes the logic-level gate variant, allowing full enhancement at VGS = 4.5 V — critical for direct microcontroller GPIO drive in 5 V and 3.3 V systems. Key differentiating specifications include 9.4 mΩ max RDS(on) at VGS=10 V, ultra-low Qg (typical ~9 nC) for fast switching edges, an integrated Schottky-like body diode with low Qrr for reduced dead-time losses in half-bridge topologies, and a 36 W power dissipation rating at TC=25 °C. The SuperSO8 5x6 footprint delivers a low thermal resistance (~1.0 °C/W RthJC max) suitable for high-current POL (point-of-load) converters. Typical applications include synchronous rectification in 48 V telecom and server bus converters, USB-PD and quick-charge adapter output stages, DC-DC buck and half-bridge motor drive stages, wireless-charging resonant converters, and battery-protection / load-switch circuits in 12 V industrial systems. The combination of low FOM and 4.5 V VGS drive makes it particularly well suited to high-frequency (>300 kHz) SMPS designs. When designing with this part, place the gate driver within 5 mm of the gate pad to suppress ringing, and select a gate resistor (typically 10–47 Ω) that balances switching loss against EMI. Confirm that drain current derating versus case temperature remains inside SOA at your worst-case operating point, and that VDS transients during turn-off are clamped below 60 V by snubber or TVS protection. This page synthesizes distributor pricing (as of 2026-09-13), parametric drop-in alternatives in the same SuperSO8 5x6 footprint, and practical layout notes not assembled in the manufacturer datasheet alone — useful for both new design selection and field-replacement decisions.
BSC097N06NSATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon
The Infineon BSC097N06NSATMA1 is a 60 V N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, housed in a SuperSO8 (PG-TDSON-8-6) 5x6 mm package with an exposed drain pad. It delivers up to 46 A continuous drain current at 25°C case temperature, an exceptionally low maximum on-resistance of 9.7 mOhm at VGS=10 V, and a pulsed drain current capability suited to switching converter and motor-drive transient loads. According to the Infineon product page, the part is rated for 2.5 W dissipation on the PCB (Ta) and 36 W on the case (Tc), giving designers flexibility between SMT-only designs and heatsink-attached layouts. A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. It belongs to the discrete semiconductor hierarchy: transistor -> FET -> MOSFET -> power MOSFET -> N-channel enhancement-mode power MOSFET. Modern trench MOSFETs like OptiMOS 5 use advanced cell geometries and thin epitaxial layers to minimize both conduction loss (RDS(on)) and switching loss (Qg, Qgd), which together determine converter efficiency at high switching frequencies. Key differentiating features include a typical gate charge of about 8 nC, an avalanche-rated body diode, 100% Rg-tested production flow, and an operating junction temperature range of -55°C to +150°C. The SuperSO8 footprint offers a superior thermal path versus standard SO-8 because the drain tab is the copper pad underneath the package, enabling PCB-side cooling without changing the silicon. These characteristics make the device competitive in 48 V telecom, server, and e-mobility auxiliary rails where every milliohm of RDS(on) translates directly into watts of loss. Architecturally, the OptiMOS 5 cell uses a deep-trench structure with a lightly doped drift region and a split-gate field plate to balance RDS(on) against switching loss. The resulting figure of merit (FOM = RDS(on) x Qg) is one of the best in its voltage class, allowing 100 kHz+ hard-switched or 1 MHz+ soft-switched topologies without exceeding package thermal limits. Typical applications include DC-DC converters for telecom/datacom, motor drive half-bridges in e-bike and small-EV inverters, synchronous rectification in 48 V isolated bus converters, hot-swap and OR-ing controllers in server CRPS rails, and Class-D audio amplifier output stages. The wide SOA margin also makes it suitable for battery protection in 12-48 V Li-ion packs where brief short-circuit events must be survived. When designing with this MOSFET, ensure the gate driver can source and sink at least 2-4 A peak to charge the gate quickly and minimize the miller plateau dwell time. Keep the gate-loop inductance under 5 nH by placing the driver physically adjacent to the gate pin and using a tight gate-to-source return path.
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon BSC098N10NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 100V technology, rated for 100 V VDS, 60 A continuous drain current (Tc) and a maximum on-resistance of 9.8 mOhm, packaged in the SuperSO8 5x6 (PG-TDSON-8-7) surface-mount outline. The part is optimized for synchronous rectification in switched-mode power supplies, where its low RDS(on) and reduced output capacitance deliver up to 43% lower conduction losses and 44% lower switching losses versus the previous generation, enabling higher system efficiency and increased power density. A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical energy in power-electronics circuits. The OptiMOS 5 family sits in the broader hierarchy of N-channel enhancement-mode MOSFETs, which in turn are part of discrete power semiconductors and the wider power-management ecosystem that includes gate drivers, DC-DC controllers, and synchronous-rectifier ICs. By combining a 100V breakdown rating with sub-10 mOhm on-resistance in a compact 5x6 mm outline, the BSC098N10NS5 family targets high-current, high-frequency converter stages where traditional planar MOSFETs would be too lossy or too large. Key differentiating specifications of the BSC098N10NS5ATMA1 include its 100 V drain-source rating, 9.8 mOhm maximum RDS(on) at VGS=10 V, 60 A continuous drain current at Tc, a typical diode forward voltage of 0.9 V (VSD at IF=30 A), and a 240 A pulsed diode current rating. The device's reduced parasitic capacitances, particularly Coss, lower switching losses at high frequencies and reduce dead-time losses in half-bridge topologies. Its 100V rating provides ample headroom for 48V telecom rails, automotive 48V mild-hybrid systems, and industrial 24V/36V bus converters. Architecturally, the OptiMOS 5 platform uses Infineon's latest trench-cell geometry and a refined gate-oxide process to shrink cell pitch while maintaining avalanche ruggedness and improving body-diode recovery softness. This translates directly to the 43% RDS(on) reduction and 44% output-capacitance reduction highlighted in the datasheet's headline metrics, and to a robust 100% UIS-tested design suitable for repetitive hard-switching loops. The SuperSO8 5x6 footprint also features a large exposed drain pad that doubles as a thermal pad, allowing the part to dissipate the 69 W (Tc) maximum with a properly designed PCB copper area. Typical applications include synchronous rectification in 48V step-down (buck) and full-bridge converters for telecom and datacom equipment, secondary-side synchronous rectification in isolated DC-DC bricks for servers, motor-drive half-bridges in 24V/36V industrial and e-mobility platforms, hot-swap and OR-ing switches in redundant power systems, and low-voltage high-current power-paths in solar and battery-management systems. The 100V rating and 60A current capability also make it a strong fit for USB-PD and high-wattage adapter designs where multiple paralleled MOSFETs must be avoided to save board area. When designing with this MOSFET, ensure the gate-drive voltage reaches the full 10 V enhancement level to achieve the rated 9.8 mOhm on-resistance; 4.5 V VGS operation is supported but increases RDS(on) significantly. Use a Kelvin-source connection (the SuperSO8 5x6 has a dedicated source-sense pin) when the part is switching above 100 kHz, and lay out the high-di/dt loop (input cap, high-side FET, low-side FET) with minimum parasitic inductance to limit voltage overshoot and ringing. This page synthesizes distributor pricing, parametric cross-reference data, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single source for selection, sourcing, and layout guidance on the BSC098N10NS5ATMA1.
BSC0993NDATMA1 - 30V 17A Dual N-Ch OptiMOS 5 Array | Infineon
The Infineon BSC0993NDATMA1 is a dual N-channel MOSFET array built on the OptiMOS 5 30V platform, delivering 17A continuous drain current (Ta) per channel in a compact surface-mount PG-TISON-8 package. It is part of Infineon's benchmark power-density family that enables highest energy efficiency in both standby and full-load operation. With a 30V drain-to-source rating and low on-resistance characteristic of the OptiMOS 5 generation, this array targets high-frequency synchronous rectification and DC-DC converter applications. A MOSFET array is a semiconductor device that integrates two or more discrete MOSFET transistors into a single package, sharing a common drain, source, or gate configuration. Arrays simplify PCB layout, reduce parasitic inductance between half-bridge switches, and shrink the total solution footprint. In the broader taxonomy, MOSFET arrays sit under discrete semiconductors -> MOSFETs -> power MOSFETs -> synchronous FET arrays. Compared with using two separate DFN MOSFETs, an integrated array halves the loop area of the high-current switching path, which directly suppresses ringing and switching losses in buck/boost converters. Key features of the BSC0993NDATMA1 include OptiMOS 5 30V technology, 17A continuous drain current, low Rds(on) typical of the OptiMOS 5 family, integrated ESD protection, and a thermally enhanced PG-TISON-8 exposed-pad package that lowers junction-to-ambient thermal resistance. The compact 5 mm x 6 mm package footprint allows direct drop-in replacement of competing dual N-channel arrays. The OptiMOS 5 architecture uses Infineon's advanced trench cell design that shrinks die area per mOhm while improving switching figures-of-merit (Qg x Rds(on)). This array is particularly suited for synchronous buck converters where the low-side and high-side FETs are co-packaged for minimal gate-loop inductance. The combined lower gate charge and reduced Qrr also improve light-load efficiency, which matters for energy-star compliant platforms. Typical applications include synchronous buck DC-DC converters for server, telecom, and POL (point-of-load) voltage rails, half-bridge motor drive stages, USB-PD and Quick Charge adapters, battery management system (BMS) protection FET arrays, and hot-swap circuits. The 30V rating gives ample margin for 12V rails and transient spikes typical in industrial and automotive environments. When designing with this part, place the gate-drive resistors as close as possible to the gate pins to suppress parasitic ringing, and connect the exposed pad to a sufficiently large copper pour. For optimal thermals, use at least 1 oz copper on top and bottom layers stitched with thermal vias beneath the pad. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
The Infineon BSC100N10NSFGATMA1 is an N-channel 100V OptiMOS power MOSFET delivering 11.4A continuous drain current (Ta) or 90A pulsed (Tc) in a surface-mount PG-TDSON-8-1 (SuperSO8 5x6) package with maximum on-resistance of 10 mΩ. It is rated for 156W power dissipation at Tc and targets high-efficiency, high power-density SMPS designs. The 'NSFG' suffix denotes the standard OptiMOS 100V family, offering a ~30% reduction in both RDS(on) and FOM versus the prior generation. An N-channel power MOSFET is a voltage-driven semiconductor switch used to efficiently route or modulate current in power-conversion circuits; the OptiMOS family from Infineon belongs to the broader discrete MOSFET -> power semiconductor -> discrete component taxonomy. Lower RDS(on) reduces conduction loss (I²×R), while a low figure-of-merit (RDS(on)×Qg) reduces switching loss, allowing higher switching frequencies and smaller magnetics in SMPS designs. Key features include 100V drain-source breakdown, 10 mΩ maximum RDS(on) at VGS=10V, an operating junction temperature range up to 150°C (per industry-standard 150°C power MOSFET practice), and a logic-compatible gate threshold suitable for standard gate drivers. The SuperSO8 5x6 footprint offers an exposed pad that minimizes thermal resistance and supports compact high-current PCB layouts. The BSC100N10NSFGATMA1 leverages Infineon's OptiMOS trench technology to deliver a balanced switching/conduction loss profile. Its low FOM enables 100-500 kHz hard-switched topologies and synchronous rectification stages where previous-generation parts would either overheat or require paralleling. Typical applications include telecom and server SMPS, synchronous rectifiers in 48V bus converters, DC-DC point-of-load (POL) modules, motor drive H-bridges, and hot-swap/OR-ing circuits. Its 100V rating provides ample headroom for 48V nominal rails with transient tolerance. When designing with this device, ensure VGS is driven to 10V for the rated 10 mΩ RDS(on) — logic-level 4.5V drive will increase on-resistance and conduction loss. Use a gate-driver with sufficient peak current (≥1A source/sink) to achieve fast switching edges and minimize crossover loss. This page synthesizes distributor pricing, drop-in same-package alternatives, parametric comparisons and design notes not collated in the manufacturer datasheet alone.
BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon BSC109N10NS3GATMA1 is an N-channel power MOSFET from the OptiMOS 3 family, rated at 100 V drain-source breakdown voltage and 63 A continuous drain current (Tc), with a maximum power dissipation of 78 W (Tc), housed in the compact PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. It delivers a maximum on-state resistance of 10.9 mOhm and a figure-of-merit reduction of approximately 30 percent versus the prior technology generation, making it a leading efficiency choice for synchronous rectification and high-frequency switching conversion. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a sufficient gate-source voltage is applied, and it is the fundamental building block of switched-mode power supplies (SMPS), motor drives, and DC-DC converters. In the broader taxonomy, power MOSFETs belong to discrete semiconductors, which sit under the wider power management ecosystem alongside gate drivers, voltage regulators, and supervisors. The OptiMOS 3 platform specifically targets high-efficiency telecom, server, and industrial SMPS designs where low conduction and switching losses translate directly into improved power-supply efficiency, denser PCB layouts, and reduced cooling requirements. Key features of the BSC109N10NS3GATMA1 include ultra-low RDS(on) of 10.9 mOhm maximum at 10 V VGS, a 100 V VDS rating suitable for 48 V telecom bus and 60 V industrial bus rails, and an avalanche-rated single-pulse body diode for inductive switching robustness. The 78 W power dissipation envelope (Tc) supports high-current operation, while the SuperSO8 5x6 mm package provides a low thermal resistance path to the PCB copper pour, enabling compact high-density designs. Typical applications include synchronous rectification in 48 V server and telecom isolated DC-DC converters, primary-side switching in industrial SMPS, motor drive H-bridges for 24-48 V brushless DC systems, hot-swap and OR-ing controllers, and battery protection circuits in e-mobility and energy storage. When designing with this MOSFET, careful attention to gate-drive voltage, dead-time, and PCB thermal layout is required to fully realize its efficiency potential.
BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon
The Infineon BSC117N08NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 80 V drain-to-source voltage and 49 A continuous drain current, housed in a SuperSO8 5x6 (PG-TDSON-8-7) surface-mount package. According to the Infineon product page, the part achieves a maximum on-state resistance of 11.7 mOhm and is specifically optimized for synchronous rectification in switched-mode power supplies. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an applied gate-to-source voltage to create a conduction channel between drain and source. N-channel MOSFETs use electrons as the majority carrier, providing lower on-resistance per unit silicon area than equivalent P-channel parts. They sit inside the power management hierarchy as discrete semiconductors -> transistors -> MOSFETs, and they are the workhorse switching element in nearly every modern DC-DC converter, motor driver, and battery protection circuit. Key features of the BSC117N08NS5ATMA1 include OptiMOS 5 process technology with up to 44% RDS(on) reduction and up to 44% output-capacitance reduction versus the prior generation, enabling higher switching frequency and reduced switching/conduction losses. The datasheet confirms 2.5 W power dissipation at TA=25 C and 50 W at TC=25 C, plus an avalanche-rated single-pulse body diode. These traits reduce the need for device paralleling and shrink magnetic component size in synchronous-rectifier positions. Typical applications include secondary-side synchronous rectification in 48 V telecom and server DC-DC bricks, OR-ing and hot-swap switches, battery management protection FETs in 12 V/24 V e-mobility packs, motor drive half-bridges, and Class-D audio amplifier output stages. Designers value the low gate charge and small package for high-density Point-of-Load converters where board area is at a premium. When designing with this part, respect the SOA curve shown in the manufacturer datasheet - the DC line derates quickly above ~30 A continuous current on a 1 in² copper pad. The drain-to-source voltage must remain below 80 V under all transient conditions including avalanche. For best EMI performance, keep the gate-drive loop compact and use a small gate-source resistor (typically 10-47 ohm) to dampen parasitic ringing without slowing switching.
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
The Infineon BSC118N10NSGATMA1 is a 100 V N-channel power MOSFET in Infineon's OptiMOS 2 family, delivering 11 A continuous drain current (Ta) and 71 A continuous drain current (Tc) with 114 W power dissipation in a compact surface-mount PG-TDSON-8-1 package. Housed in an 8-pin TDSON EP (5 mm x 6 mm) outline with an exposed drain tab, this device is engineered for high-efficiency switching-mode power supplies (SMPS) and synchronous rectification stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate current flow between source and drain terminals. MOSFETs are core building blocks of modern switched-mode power conversion, sitting below passive components and above raw silicon in the power-electronics hierarchy: MOSFET -> power switch -> SMPS -> AC-DC or DC-DC converter. The OptiMOS 2 generation specifically targets high-frequency SMPS and synchronous rectification in telecom, server, and computing power rails. Key features of the BSC118N10NSGATMA1 include N-channel normal-level enhancement mode operation, excellent gate-charge x RDS(on) figure of merit (FOM), very low on-state resistance, 150 C maximum operating junction temperature, Pb-free lead plating, full RoHS compliance, JEDEC qualification for the target application, and halogen-free construction. The advanced trench cell architecture enables the lowest RDS(on) in class, minimizing conduction loss in 48 V telecom bus converters and 24 V industrial point-of-load regulators. Typical applications include high-frequency DC-DC converters, synchronous rectification in isolated half-bridge and full-bridge converters, telecom 48 V bus converters, server and datacom VRM stages, motor-drive low-side switches, and battery protection in e-mobility and power-tool packs. The PG-TDSON-8-1 footprint is one of the most common power MOSFET packages in 48 V and 24 V rails, simplifying PCB layout reuse across related rails. When designing with this device, ensure the gate drive voltage swings fully above the threshold (typically 10 V) to achieve the rated RDS(on). For high-current paths, stitch the exposed drain pad directly to a large copper pour to keep thermal resistance below the 50 C/W range and avoid thermal runaway above 100 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC120N03LSGATMA1 - 30V 39A OptiMOS 3 N-Channel MOSFET | Infineon
The Infineon BSC120N03LSGATMA1 is a 30V N-channel power MOSFET from the OptiMOS 3 family, rated for 12A continuous drain current (Ta) and 39A continuous drain current (Tc) in a compact PG-TDSON-8-5 surface-mount package. It features an ultra-low typical on-state resistance of 12 mOhm at VGS=10V and ultra-low gate and output charge, making it one of the best-in-class choices for high-efficiency voltage regulator solutions in servers, datacom and telecom applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to switch or amplify electronic signals in power conversion and motor drive circuits. The OptiMOS 3 family represents Infineon's third-generation 25V-300V N-channel trench MOSFET platform, positioned within the broader power semiconductor taxonomy: power MOSFET -> discrete semiconductor -> power management component. Compared to older planar MOSFET generations, OptiMOS 3 parts deliver lower RDS(on), lower gate charge (Qg), and lower figure-of-merit (FOM = RDS(on) x Qg), enabling higher switching frequencies and smaller magnetics in SMPS designs. Key specifications include a maximum drain-source voltage (VDS) of 30V, a continuous drain current of 12A at 25C ambient (Ta) rising to 39A at case temperature (Tc), pulsed drain current capability typically rated significantly higher, gate-source voltage (VGS) of +/-20V maximum, and power dissipation of 2.5W (Ta) to 28W (Tc). The PG-TDSON-8-5 (also called SuperSO-8) package provides an exposed thermal pad for low thermal resistance. Technically, the device uses Infineon's advanced trench MOSFET technology to achieve the industry's lowest on-state resistance per package area in the 30V class. The low gate charge (Qg) reduces driver losses, while the low output charge (Qoss) minimizes switching losses in hard-switched topologies such as synchronous buck converters, OR-ing FETs, and hot-swap circuits. Typical applications include high-frequency DC-DC converters (synchronous buck and synchronous rectification stages), server and datacom VRM solutions, telecom point-of-load converters, battery management protection circuits, load switches, and motor control. The 30V rating also provides ample headroom for 12V rail switching in industrial and automotive subsystems. When designing with this part, ensure the gate driver can source/sink sufficient peak current (typically 1-2A) to charge the gate quickly. Use Kelvin-source connection (pin 5 on SuperSO-8) to mitigate source-inductance-induced gate-oscillation, and follow PCB layout guidelines for power MOSFETs (wide copper pours, short gate loops). This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS 3 family and competitor equivalents, and practical design notes not found in the manufacturer datasheet alone.
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon BSC123N08NS3GATMA1 is an N-channel power MOSFET rated at 80 V drain-source voltage and 55 A continuous drain current (Tc), built on Infineon's OptiMOS 3 technology and housed in the PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. It features a maximum on-resistance of 12.3 mOhm and dissipates up to 66 W (Tc), making it one of the benchmark 80 V parts for high-current synchronous-rectifier and OR-ing stages. N-channel power MOSFETs are voltage-controlled switches that use a gate-source voltage to modulate conduction between drain and source. In the broader taxonomy, MOSFETs belong to discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs. OptiMOS 3 is Infineon's third-generation trench power-MOSFET platform optimized for low RDS(on) per package area, low gate charge, and fast switching - parameters that directly determine conduction and switching losses in switched-mode power conversion. Key specifications include 12.3 mOhm maximum RDS(on) at VGS=10 V, ±20 V maximum gate-source voltage, and an operating junction temperature range of -55C to +150C. The PG-TDSON-8-1 (SuperSO8) package provides a low thermal-resistance path (down to ~1.5 C/W junction-to-case depending on PCB layout) and is footprint-compatible with industry-standard SO-8 power pads, enabling drop-in PCB replacement in many 80 V designs. The OptiMOS 3 cell architecture uses an advanced trench geometry that minimizes the on-resistance contribution of the epi layer while preserving avalanche ruggedness. The integrated body diode supports synchronous-rectifier operation in buck, boost, and half-bridge topologies without external anti-parallel diodes, reducing BOM count and PCB area. Typical applications include synchronous rectification in 48 V telecom and server point-of-load converters, hot-swap and OR-ing switches on 48-60 V distribution rails, motor-drive half-bridges in industrial 24-48 V systems, and primary-side switching in solar micro-inverters. The low RDS(on) per mm2 also suits high-current eFuse and battery-protection FET roles in 48 V battery packs. When designing with this device, ensure VGS drive of 10 V (logic-level 4.5 V variants exist separately) and pay attention to PCB copper area for thermal performance - the same 12.3 mOhm part can dissipate far more on a 2 oz 1-square-inch copper pour than on a minimal 1 oz land pattern. This page synthesizes distributor pricing, parametric drop-in alternatives in PG-TDSON-8, and practical design notes not collated in the manufacturer datasheet.
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
Infineon BSC12DN20NS3GATMA1 is a 200V-rated N-channel OptiMOS power MOSFET in a surface-mount PG-TDSON-8-5 package, optimized for high-frequency switching power conversion. According to the verified Infineon datasheet, the device delivers a continuous drain current of 11.3A (Tc) and a power dissipation of 50W (Tc), with a low on-state resistance that minimizes conduction losses. The part belongs to Infineon's 200V OptiMOS family, which targets synchronous rectification in 48V telecom and server bus architectures, DC-DC converters, uninterruptible power supplies (UPS), and DC motor drive inverters. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between the drain and source terminals. Power MOSFETs are a sub-class of discrete semiconductors and a building block of power management ICs, voltage regulators, and motor-driver modules. Within the MOSFET family, N-channel enhancement-mode devices are the most common high-side and low-side switches because their lower on-resistance per unit area translates into higher efficiency and smaller thermal footprint than equivalent P-channel parts. The BSC12DN20NS3GATMA1's 200V drain-source rating places it in the mid-voltage tier, suitable for 48V bus systems, telecom secondary-side rectification, and 100-150V battery-powered industrial platforms. Key electrical features include 200V VDS(max), 11.3A continuous drain current, a gate threshold optimized for standard 10V drive, and ultra-low figure-of-merit for high-frequency operation. The PG-TDSON-8-5 package with exposed pad provides low thermal resistance, enabling direct PCB copper heatsinking without an external heatsink in many designs. The combination of low gate charge, low output charge, and low on-resistance makes this part well-suited for hard- and soft-switching topologies at switching frequencies from 100 kHz up to several hundred kHz. The architecture uses Infineon's advanced OptiMOS silicon process, which balances conduction loss and switching loss to maximize efficiency across the load range. The chip's cell-density optimization reduces RDS(on) and gate charge simultaneously, an important metric for hard-switched converters where switching loss dominates at light load and conduction loss dominates at full load. This dual optimization distinguishes 200V OptiMOS from older-generation MOSFETs and is the reason the family is specified in 48V point-of-load and synchronous-rectification reference designs. Typical applications include 48V synchronous rectification in telecom and data-center power stages, primary-side switches in DC-DC converters, UPS low-voltage battery-side switches, and half-bridge / full-bridge inverters for DC motor drives. The 200V rating provides substantial margin above nominal 48V bus rails, improving robustness against transient over-voltage events. When designing with this MOSFET, calculate both conduction loss (I²·RDS(on)) and switching loss (driven by gate charge and VDS rise/fall times) at the operating frequency, and verify that the PCB layout minimizes source-inductance loop area. Always check the SOA curve at the worst-case operating point to ensure adequate margin during start-up and fault transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC146N10LS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 logic-level platform, rated for 100 V VDS and 14.6 mOhm maximum RDS(on) at 10 V VGS, in a SuperSO8 / PG-TDSON-8-6 surface-mount package. Continuous drain current is specified at 44 A at case temperature 25 C with pulsed capability higher, and power dissipation is 2.5 W on the 1 sq-in. JEDEC FR-4 reference footprint (Ta) rising to 52 W at Tc. The logic-level gate drive threshold (VGS(th) typically well below 2.5 V at 250 uA) means the part can be driven directly from 3.3 V or 5 V microcontroller PWM outputs, removing the need for a gate-driver IC in many low-power synchronous buck or hot-swap paths. What is an OptiMOS 5 power MOSFET? OptiMOS is Infineon's family of low-voltage power MOSFETs optimized for high-frequency switching power conversion. In the system hierarchy, a power MOSFET is a discrete semiconductor that switches current between source and drain under gate control; it sits beneath DC-DC converters, motor drives, and load switches in the power-management tree. Logic-level variants (the L in the part number) accept low gate-drive voltages, enabling direct interface with microcontrollers and low-voltage PWM controllers. OptiMOS 5 is the 5th-generation refinement that reduces RDS(on) x Qg figure-of-merit versus OptiMOS 3 and 4, enabling both higher efficiency and smaller magnetics at the same load. Key features of the BSC146N10LS5 include 14.6 mOhm max RDS(on) at VGS=10 V, 100 V VDS rating suitable for 48 V telecom and industrial buses with ample derating margin, logic-level VGS(th) typically around 1.7 V supporting 5 V gate drive, and a SuperSO8 5x6 mm footprint that is pin-compatible with the standard Power-SO8 / SO-8FL used across the MOSFET industry. The OptiMOS 5 trench process delivers lower switching losses than previous generations and improved avalanche ruggedness for unclamped inductive switching events. The architecture uses an advanced trench-based cell structure that maximizes silicon utilization for low on-state loss while keeping gate charge low to minimize switching loss at high frequencies. Combined, the low RDS(on) x Qg product translates to cooler operation and higher efficiency in hard-switched topologies such as buck converters, half-bridges, and synchronous rectifiers. Typical applications include 48 V telecom hot-swap and OR-ing, USB-PD and adapter buck stages, motor drive half-bridges for eMobility and small BLDC fans, synchronous rectification in isolated DC-DC modules, and battery protection FETs in 12 V / 24 V eTools. The wide VDS margin and small footprint also suit point-of-load conversion in industrial PLC and server auxiliary rails. When designing with this MOSFET, carefully size the gate-drive loop and place a 10-100 nF ceramic bypass close to the gate-source terminals. Confirm SOA at the worst-case ID, VDS, and pulse duration for hot-swap, and respect the Tc=25 C absolute rating derating curve above 25 C case. Keep the source-sense return path short to avoid parasitic inductance that can cause VGS ringing during fast switching transitions. This page synthesizes distributor pricing tiers, drop-in alternative MPNs in the same SuperSO8 footprint, and practical design notes that complement the manufacturer datasheet for engineering reuse.
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
Infineon BSC150N03LDGATMA1 is a dual N-channel MOSFET array rated at 30V Vds and 20A Id continuous, built on Infineon's OptiMOS 3 process and housed in a compact PG-TDSON-8-4 (5x6 mm) surface-mount package with an exposed drain pad. The device delivers ultra-low gate charge (Qg) and output charge (Qoss) alongside very low on-state resistance, making it optimized for synchronous rectification and high-frequency DC-DC conversion. According to the manufacturer datasheet, the array combines two matched N-FETs in a single package, enabling half-bridge, full-bridge, and dual-FET topologies with minimal parasitic imbalance. A MOSFET array is a discrete-semiconductor category that integrates two or more MOSFETs in one molded plastic package. MOSFETs are field-effect transistors that use a gate voltage to control drain-source current, and they belong to the broader hierarchy of power transistors > discrete semiconductors > active components. OptiMOS 3 represents Infineon's third-generation 30V trench MOSFET platform, balancing low Rds(on) with low Qrr and small package footprint for server, datacom, and telecom power-conversion applications. Key differentiating specifications of the BSC150N03LDGATMA1 include its 30V Vds rating, 20A continuous drain current, ultra-low typical Rds(on) at Vgs=10V, and very low Qg and Qoss figures that minimize switching losses. The PG-TDSON-8-4 package exposes the die-pad to a thermal resistance suitable for double-sided cooling. The part is rated for operation across -55C to +150C junction temperature, with 100% avalanche-tested devices and Pb-free/RoHS-compliant construction. The OptiMOS 3 trench technology achieves industry-low figure of merit (FOM = Rds(on) x Qg), making the BSC150N03LDGATMA1 well-suited to high-frequency buck, synchronous buck, and buck-boost converters. The dual-FET configuration reduces board area and gate-loop inductance versus two discrete SO-8 parts, which is critical for clean switching at 500 kHz to 1 MHz. The exposed die pad enables efficient bottom-side cooling via direct PCB copper bonding. Typical applications include synchronous rectification in 12V server bus converters, 5V to 24V point-of-load (POL) regulators, ORing and hot-swap circuits in telecom/datacom equipment, high-side and low-side switching in motor-driver half-bridges, and battery-management protection FETs in portable and notebook systems. The 30V rating provides ample margin above the 19V maximum of multi-cell lithium battery packs and 12V server rails. When designing with this part, ensure the gate-drive voltage reaches at least 4.5V (logic-level compatible) for full enhancement and lowest Rds(on). For continuous high-current operation above 10A, a minimum 1 oz copper PCB pour directly beneath the exposed drain pad is recommended to keep junction temperature within safe limits and avoid thermal runaway in the loop. Always observe SOA curves under pulsed loads and consider gate-driver source/sink current when operating at >300 kHz. This page synthesizes distributor pricing snapshots, verified drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet. Where the official document leaves parameters undefined for this part number, [DATA_NEEDED] markers are used rather than guessed values, and every parametric claim is sourced.
BSC155N06NDATMA1 - Dual 60V 20A OptiMOS N-MOSFET | Infineon
The Infineon BSC155N06NDATMA1 is a dual N-channel OptiMOS power MOSFET array housed in a PG-TDSON-8-4 (SuperSO8 5x6 mm) surface-mount package, rated at 60 V drain-to-source voltage and 20 A continuous drain current per channel at 25 C case temperature. It is built on Infineon's OptiMOS 3 60V trench technology, delivering a maximum on-state resistance of 15.5 mOhm at 10 V VGS and a low gate charge for fast switching at high frequencies. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplifying electronic signals. As a member of the power management hierarchy, it sits beneath DC-DC converters, voltage regulators, and motor drivers. The 'N-channel' designation means conduction occurs via electrons, which yields lower on-resistance per unit silicon area than P-channel equivalents. The 'dual' configuration integrates two independent MOSFET dies in one thermally efficient package, simplifying half-bridge, synchronous-rectifier, and full-bridge topologies by halving board area and parasitic inductance. Key features include a 60 V VDS breakdown rating suitable for 12 V and 24 V bus systems, 15.5 mOhm maximum RDS(on) at VGS=10 V, low Qgd/Qgs ratio below 0.8 for high shoot-through immunity in half-bridge topologies, and operation up to 175 C junction temperature. The PG-TDSON-8 SuperSO8 package provides superior thermal resistance compared to standard SO-8, enabling higher continuous current without external heatsinking. The architecture leverages OptiMOS 3 trench cell design to minimize both conduction and switching losses. With low figure-of-merit (RDS(on) x Qg), this part is optimized for high-frequency synchronous rectification in switched-mode power supplies, where reduced switching loss directly improves system efficiency at elevated switching frequencies of 200 kHz to 1 MHz. Typical applications include synchronous rectification in 12 V isolated DC-DC converters, motor drive half-bridges in battery-powered tools, class-D audio amplifier output stages, and OR-ing FET configurations in redundant power systems. The dual co-packaged design is particularly valuable where PCB real estate is constrained. When designing with this device, ensure gate-drive voltage reaches at least 10 V for full enhancement, and keep the high-current loop area minimal to control switching transients. The exposed pad must be soldered to a sufficiently large copper pour (typically 1 square inch minimum) for thermal dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement the manufacturer datasheet, providing engineering context for component selection and supply-chain decisions.
BSC190N12NS3GATMA1 - 120V 44A N-Channel OptiMOS 3 MOSFET | Infineon
The Infineon BSC190N12NS3GATMA1 is a 120V-rated N-channel power MOSFET built on Infineon's OptiMOS 3 technology, housed in a SuperSO8 5x6 surface-mount package (PG-TDSON-8-1). It delivers a maximum continuous drain current of 8.6A at Ta (25C) and 44A at Tc (case temperature), with a typical on-resistance of 19 mOhm and a maximum power dissipation of 69W at Tc. An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between drain and source terminals. MOSFETs sit within the broader power semiconductor hierarchy (transistor -> discrete semiconductor -> semiconductor) and are the dominant switching element in modern DC-DC converters, motor drives, and synchronous rectification stages. OptiMOS is Infineon's trademarked trench MOSFET platform optimized for low figure-of-merit (RDS(on) x Qg), enabling high switching frequencies and reduced conduction loss. Key differentiating specifications include a 19 mOhm maximum RDS(on) at VGS=10V, low gate charge for fast switching transitions, an integrated body diode for inductive freewheeling, and a logic-compatible gate threshold. The SuperSO8 5x6 footprint provides a low thermal resistance path (approximately 1C/W junction-to-case on the exposed pad), enabling compact high-current designs. Avalanche-rated and 100% UIS-tested, the device suits demanding power-conversion topologies. Typical applications include primary-side switching in telecom and server DC-DC converters, synchronous rectification in 48V point-of-load modules, solar micro-inverters, motor control H-bridges, and hot-swap / OR-ing circuits in industrial power systems. Its 120V drain-source rating provides ample margin for 48V and 72V battery-fed designs. When designing with this part, drive the gate with a dedicated gate-driver IC capable of 10V VGS rather than a logic-level GPIO, and minimize the gate-loop loop area on the PCB to control switching loss and EMI. Always size the heatsink or copper area against worst-case conduction and switching losses at the target switching frequency.
BSC190N15NS3G - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon BSC190N15NS3G is an N-channel power MOSFET built on Infineon's OptiMOS 3 technology, rated for 150 V drain-source voltage, 50 A continuous drain current (Tc), and a maximum on-resistance of 19 mOhm. Housed in the SuperSO8 5x6 / PG-TDSON-8-1 surface-mount package, it targets high-efficiency switching conversion and motor-drive applications. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive n-channel between drain and source, allowing current flow with very low conduction-loss. Power MOSFETs belong to the broader family of discrete semiconductors used for power management, sitting hierarchically under transistors, then discrete power devices. They are typically specified by R_DS(on), V_DS breakdown, Qg (gate charge), and Qrr (reverse-recovery charge), all of which govern switching and conduction efficiency. OptiMOS 3 is Infineon's third-generation power-MOSFET platform that delivers an order-of-magnitude lower R_DS(on) per die area than earlier planar generations, achieved through a trench-gate architecture and refined epitaxial profile. For the BSC190N15NS3G, this translates to 19 mOhm max R_DS(on) at 10 V V_GS, allowing the device to replace older 200 V/40 A parts with the same PCB footprint while cutting conduction loss roughly in half. Typical applications include 48 V telecom and server point-of-load (POL) converters, synchronous rectification in telecom brick supplies, motor-drive half-bridges for e-bike and industrial fans, hot-swap controllers in 48 V backplanes, and primary-side switching in solar micro-inverters. The device's low Qg and absence of body-diode reverse-recovery charge make it especially suitable for high-frequency hard-switched topologies up to several hundred kHz. When laying out a PCB for the BSC190N15NS3G, place the gate-drive return and power-source return on the same continuous copper pour to minimize source-inductance-driven gate ringing. The exposed pad (pin 5) must be soldered to a sufficiently large copper area for thermal dissipation; without it, the device can dissipate only a fraction of its rated power before thermal shutdown. This page synthesizes Infineon's OptiMOS 3 datasheet data, distributor pricing snapshots, cross-reference alternatives from DigiKey/Mouser, and practical design notes - content not consolidated anywhere else on the web for the BSC190N15NS3G.
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
The Infineon BSC190N15NS3GATMA1 is a 150V, 50A N-channel power MOSFET built on Infineon's OptiMOS 3 technology, housed in a surface-mount PG-TDSON-8-1 (TDSON EP) package. According to manufacturer literature, it achieves a maximum on-resistance of 19 mOhm at VGS=10V, a continuous drain current of 50A at Tc=25C, and a maximum power dissipation of 125W, with a 40% reduction in RDS(on) and 45% reduction in figure of merit versus the next best competitor. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power electronics. As an N-channel enhancement-mode device, it conducts when a positive gate-source voltage is applied and blocks when VGS is below the threshold. The OptiMOS 3 family specifically targets high-frequency, high-efficiency switching applications, sitting in the broader taxonomy of power semiconductor -> discrete MOSFET -> N-channel MOSFET -> OptiMOS family. This part occupies the 150V drain-source voltage class and is optimized for synchronous rectification, motor control, and DC-DC conversion in industrial and server power systems. Key features include a low typical gate charge (Qg) for fast switching, an avalanche-rated single-pulse body diode for inductive switching robustness, and a logic-level compatible gate threshold suitable for 10V gate drive. The PG-TDSON-8-1 package features an exposed drain pad that provides a low thermal resistance path, typically under 1 C/W junction-to-case, enabling high continuous current handling in compact PCB areas. Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, high-current motor drive half-bridges, solar inverter boost stages, hot-swap and OR-ing controllers in 24V/48V industrial buses, and battery management protection switches. The 150V rating provides ample margin for 100V-bus telecom and 96V battery systems where 100V or 120V competitor parts would be marginal. Designers should select gate drive voltage and external gate resistors carefully: switching losses scale with Qg and the driver can deliver peak currents of several amps. For high-frequency synchronous rectification, place the gate-drive loop area minimal and use a Kelvin-source connection when available to suppress source-inductance ringing.
BSC265N10LSFGATMA1 - 100V 40A N-Channel OptiMOS 2 MOSFET | Infineon
The Infineon BSC265N10LSFGATMA1 is an N-channel power MOSFET rated at 100V drain-source voltage and 40A continuous drain current (Tc) from Infineon's OptiMOS 2 power-MOSFET family, housed in a surface-mount PG-TDSON-8-1 (TDSON-8) package. Its headline parameters are 100V VDS, 40A ID, and 78W power dissipation (Tc), giving it an excellent figure-of-merit for high-current 12V/24V/48V bus switching in synchronous rectification, hot-swap, and motor-drive positions. What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-controlled semiconductor switch in which an n-type conduction channel forms between source and drain when a positive gate-source voltage is applied. Power MOSFETs in the OptiMOS 2 family use trench-gate silicon technology to minimise on-state resistance (RDS(on)) and gate charge (Qg), placing them in the hierarchy: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> power switch. They are the workhorse building block for DC-DC converters, motor drives, and protection circuits in industrial, computing, and automotive systems. Key features of the BSC265N10LSFGATMA1 include an extremely low on-state resistance for a 100V part, an integrated Schottky-like body diode optimised for synchronous rectification, and low gate charge that minimises driver losses at high switching frequencies. The device is specified to handle high peak currents during in-rush events and is qualified for surface-mount reflow assembly with an MSL rating suitable for standard lead-free profiles. Technically, the OptiMOS 2 cell design shrinks the MOSFET pitch while keeping the same active silicon area, halving RDS(on) per unit area versus the previous generation. The exposed metal pad on the bottom of the TDSON-8 package provides a low-thermal-resistance path to the PCB copper, enabling the 78W (Tc) dissipation figure. The avalanche-rated body diode is robust enough for hard-commutated topologies, while low Qrr reduces reverse-recovery losses in bridge circuits. Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, hot-swap and OR-ing controllers in 12V/24V distributed-power systems, motor-drive half-bridges in industrial automation, and high-current load switches in battery management. The 100V rating also covers 48V telecom rails with ample derating margin. When designing with this part, verify that the gate driver's voltage swing matches the device's VGS(th) and fully-enhanced plateau region, and ensure the PCB copper area under the exposed pad is large enough to keep the junction below the maximum rating. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon BSC340N08NS3GATMA1 is an 80V N-channel power MOSFET rated at 23A continuous drain current (Tc) and 7A by Ta, built on Infineon's OptiMOS 3 technology in the PG-TDSON-8-5 (SuperSO8 5x6) surface-mount package. It features a maximum on-state resistance of 34 mOhm at VGS=10V, ultra-low gate charge (Qg) and figure-of-merit (FOM) tuned for high-frequency switching, and an avalanche-rated single-channel die. A power MOSFET is a voltage-controlled semiconductor switch that turns on when VGS exceeds the threshold. The OptiMOS 3 family is Infineon's third-generation medium-voltage trench MOSFET platform, optimized for synchronous rectification, DC-DC conversion, and motor drive applications where conduction loss and switching loss must both be minimized. Within the broader taxonomy, the part sits at MOSFET -> power transistor -> discrete semiconductor. Key features include 32W power dissipation (Tc), low RDS(on) of 34 mOhm max, low Qgd / Qrr for fast switching, an integrated single-channel design with Kelvin-source pin on SuperSO8 for reduced gate-loop inductance, and 100% Rg-tested gate resistance. The PG-TDSON-8-5 package provides a low thermal resistance path suitable for high-current-density PCBs. The device is lead-free, RoHS compliant, and qualified to industrial-grade MSL1. Technical depth: OptiMOS 3 uses a charge-balance trench cell that achieves ~30% lower RDS(on) per die area versus the prior OptiMOS 2 generation. The SuperSO8 5x6mm footprint exposes the source pad as a thermal pad, which when soldered to a sufficient copper pour drops junction-to-ambient thermal resistance to about 50C/W on a 1oz, 1sq-inch FR4 PCB. Gate-source voltage is rated to plus/minus 20V and the part is rated for repetitive avalanche. Typical applications include DC-DC synchronous rectification in 48V telecom and server bus converters, 24V/36V battery-powered motor drives (e-bikes, drones, e-mobility), solar micro-inverters, hot-swap and OR-ing circuits, and load-side high-side switches in industrial automation. Design consideration: At full 23A load, ensure PCB copper area provides RthJA below 50C/W to keep Tj below 125C at Ta=85C; the PG-TDSON-8-5 thermal pad must be soldered to at least 1 sq inch of 1oz copper, otherwise the 80% derated current becomes mandatory. This page synthesizes Infineon distributor pricing, parametric drop-in alternatives from verified cross-references, and practical design notes that go beyond the manufacturer datasheet. Engineers can directly compare package, RDS(on), Id, and VDS to select a verified same-footprint replacement.
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
The Infineon BSC360N15NS3GATMA1 is an N-channel OptiMOS 3 power MOSFET rated for 150 V drain-source breakdown, 33 A continuous drain current at Tc, and a maximum on-resistance of 36 mOhm at 10 V VGS, packaged in the 8-pin SuperSO8 (PG-TDSON-8-1) surface-mount footprint. It is engineered for high-frequency switching and synchronous rectification in switched-mode power supplies, achieving a 40 percent lower RDS(on) and 45 percent better figure of merit compared to the next-best competitor in its voltage class. An N-channel power MOSFET is a voltage-controlled three-terminal transistor in which a positive gate-to-source voltage creates an inversion-layer conduction channel between drain and source, allowing electrons to flow. Power MOSFETs sit within the broader hierarchy of discrete semiconductors: transistor -> MOSFET -> N-channel power MOSFET -> OptiMOS family. OptiMOS 3 is Infineon's third-generation high-performance trench MOSFET process platform, optimized for low conduction and switching losses simultaneously. Key features include a 150 V drain-source breakdown voltage, ultra-low 36 mOhm maximum on-resistance at VGS = 10 V, 33 A continuous drain current at Tc, and a low gate charge for fast switching transitions. The SuperSO8 package exposes the drain pad through the bottom thermal pad, minimizing package resistance and maximizing heat transfer to the PCB copper. Avalanche-rated and 100 percent Rg-tested, the device is qualified for industrial and telecom power-conversion environments. The OptiMOS 3 process technology uses a charge-balanced super-junction trench architecture, producing a smaller die for a given RDS(on) than planar predecessors. The lower gate charge Qg and reduced Qgd translate directly into reduced switching losses at high frequency, enabling smaller magnetics and output capacitors in LLC, full-bridge, and synchronous buck topologies at the 150 V node. Typical applications include 48 V telecom bus converters, synchronous rectification in isolated DC-DC stages, solar micro-inverters, motor drive half-bridges, and hot-swap controllers in server backplanes. The SuperSO8 footprint also suits point-of-load converters from intermediate 24 V or 36 V distributed bus rails. When designing with this device, ensure the gate driver delivers at least 10 V VGS for full enhancement; below 6 V the device enters the Miller plateau and RDS(on) rises sharply. Always stay within the SOA curve for pulsed loads and provide sufficient gate-source pull-down to prevent inadvertent turn-on from dv/dt coupling. This page consolidates distributor pricing, drop-in alternatives in the same SuperSO8 footprint, and practical PCB-layout notes beyond what the bare manufacturer datasheet provides.
BSC520N15NS3 - 150V 21A N-Ch OptiMOS 3 MOSFET | Infineon
The Infineon BSC520N15NS3 (full ordering code BSC520N15NS3G) is a 150V N-channel power MOSFET in Infineon's OptiMOS 3 family, housed in a SuperSO8 (PG-TDSON-8-5 / 5x6 mm) surface-mount package. It delivers a continuous drain current of 21 A at TC and dissipates up to 57 W, with a maximum on-state resistance of 52 mOhm at VGS = 10 V. The device targets high-performance, high-efficiency power conversion where low RDS(on) and fast switching combine to shrink the BOM. What is an N-channel power MOSFET? An N-channel MOSFET is a voltage-driven semiconductor switch whose drain current flows when a positive gate-source voltage is applied. MOSFETs belong to the discrete power-semiconductor hierarchy (transistor -> FET -> MOSFET -> power MOSFET -> OptiMOS class), and they sit inside the broader power-electronics tree (switching regulator -> DC-DC converter -> SMPS -> power management). Infineon's OptiMOS family is positioned for low-voltage through high-voltage synchronous rectification, motor drive, and hot-swap roles where conduction and switching losses together set the thermal budget. Key features include: 150 V drain-source breakdown (V(BR)DSS), 52 mOhm max RDS(on) at VGS = 10 V, 21 A continuous ID, gate-threshold VGS(th) typically 3 V, and an avalanche-rated single-pulse body diode. The SuperSO8 / TDSON-8 footprint reduces footprint vs DPAK while preserving a low thermal resistance path through the drain tab and exposed pad. Architecturally, the OptiMOS 3 cell uses a trench-gate structure to shrink cell pitch, dropping RDS(on) per unit area versus planar generations. The trade-off is a higher gate charge Qg, so driver design must supply sufficient peak current during the Miller plateau. Typical applications include synchronous rectification in 48 V telecom and server bus rails, secondary-side rectification on 24 V industrial supplies, brushless DC (BLDC) motor half-bridges, e-bike and power-tool inverters, solar micro-inverters, and hot-swap / OR-ing switches in telecom shelves. When designing with the BSC520N15NS3, keep the gate-drive voltage above 10 V for full RDS(on) performance, place a gate-source pull-down resistor to hold the device off during start-up, and respect the avalanche energy rating during inductive switching events. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not aggregated in the manufacturer datasheet itself.
BSC520N15NS3G - 150V N-Ch 21A OptiMOS 3 MOSFET | Infineon
The Infineon BSC520N15NS3G is a 150 V N-channel power MOSFET built on Infineon's OptiMOS 3 technology, delivering a maximum drain current of 21 A and a maximum on-resistance of 52 mΩ in a SuperSO8 (TDSON-8 / PG-TDSON-8-5) 5x6 mm surface-mount package. The device is optimized for high-frequency DC-DC conversion, offering an excellent gate charge x RDS(on) figure of merit (FOM) that minimizes switching and conduction losses in synchronous rectification and primary-side switching stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route and modulate electrical energy in power-conversion circuits. Within the broader taxonomy it belongs to: MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor. The OptiMOS 3 generation specifically targets low-voltage (<=150 V) synchronous-rectifier, motor-drive, and hot-swap applications, where low gate charge and low RDS(on) directly improve converter efficiency and thermal headroom. Key specifications include 150 V drain-source breakdown voltage (VDS), 21 A continuous drain current (ID) at TC=25°C, 57 W power dissipation (Ptot) at TC=25°C, and 52 mΩ maximum RDS(on) at VGS=10 V. The MOSFET is rated for operation from -55°C to +150°C junction temperature and is offered in Pb-free lead plating with RoHS compliance. The TDSON-8-5 (SuperSO8 5x6) package provides a low thermal-resistance path to the PCB and is JEDEC-qualified per industry standards for surface-mount power devices. Architecturally, the BSC520N15NS3G uses a trench-gate N-channel cell structure that minimizes on-resistance per unit silicon area while keeping intrinsic capacitances (Ciss, Coss, Crss) low for fast switching transitions. The combination of low Qg and low RDS(on) reduces both gate-drive losses and conduction losses, which is particularly valuable at high switching frequencies (>200 kHz) where gate-drive loss dominates overall efficiency. Typical applications include synchronous rectification in 48 V telecom and server DC-DC converters, primary-side switching in industrial SMPS, motor-drive H-bridges for 24-72 V battery-powered equipment, solar micro-inverters, and hot-swap / e-fuse circuits in telecom and networking hardware. The 150 V rating also provides ample derating margin for 24 V, 36 V, and 48 V nominal bus rails. Designers should size gate-drive voltage to 10 V VGS for full RDS(on) enhancement, use Kelvin-source PCB layout to suppress source-inductance ringing, and verify that the chosen heatsink or copper-pour area keeps junction temperature below 125°C at maximum continuous load. The exposed drain pad on the TDSON-8 package must be soldered to a sufficiently large copper pour to achieve the rated 57 W dissipation. This page synthesizes distributor pricing, verified drop-in alternatives sourced from manufacturer cross-reference data, and practical PCB-layout notes that are not aggregated on any single distributor or manufacturer page, giving engineers a single reference for sourcing, second-sourcing, and designing with the BSC520N15NS3G.