10M50DAF484I7P vs 10M50DAF484C7G Сравнение
Подробное сравнение бок о бок 10M50DAF484I7P от Intel и 10M50DAF484C7G от Intel. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | 10M50DAF484I7P | 10M50DAF484C7G |
|---|---|---|
| Бренд | Intel | Intel |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $112,00 | $65,80 |
| Product Family | MAX 10 | — |
| Logic Elements (LE) | 50,000 | — |
| Embedded Memory (bits) | 1,677,312 | — |
| Embedded Memory Blocks | M9K (and M144K) | — |
| 18x18 Multipliers | 312 | — |
| User I/O Pins (max) | 360 | — |
| Корпус | 484-ball FineLine BGA (F484) | 484-ball FBGA (F484), 23 x 23 mm, 1.0 mm pitch |
| Pitch | 1.0 mm | — |
| Process Node | 55 nm embedded flash (TSMC) | — |
| On-die Configuration Flash | Yes (non-volatile, instant-on) | — |
| On-die ADC | Dual 12-bit SAR, 1 MSPS, up to 16 analog inputs | — |
| PLLs | 8 (general-purpose, fractional on selected devices) | 2 |
| Global Clock Networks | 20 | [DATA_NEEDED: global clocks count] |
| Speed Grade | 7 (slowest industrial bin, highest margin) | — |
| Рабочая температура | -40C to +100C (Tj, industrial) | 0 C to +85 C (commercial grade, C7 speed) |
| Configuration Modes | Internal flash, JTAG, dual-boot image support | — |
| Статус RoHS | Compliant | Compliant |
| Product Type | — | FPGA (Field-Programmable Gate Array) |
| Series | — | MAX 10 |
| Logic Elements | — | 50,000 |
| Embedded Memory | — | 1,677,312 bits (approximately 1.6 Mbit) |
| Embedded 18x18 Multipliers | — | 312 |
| User Flash Memory | — | [DATA_NEEDED: user flash bits] |
| Number of User I/O | — | 360 |
| Напряжение питания | — | 1.2 V core (VCCINT) |
| Тип монтажа | — | Surface Mount |
| Configuration Memory | — | Non-volatile embedded flash (dual-configuration) |
| ADC | — | Integrated 12-bit SAR, up to 17 channels |
| Process Technology | — | 55 nm embedded flash CMOS |
| Уровень MSL | — | 3 |