BSZ018NE2LSIATMA1 vs BSZ011NE2LS5IATMA1 Сравнение
Подробное сравнение бок о бок BSZ018NE2LSIATMA1 от Infineon и BSZ011NE2LS5IATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSZ018NE2LSIATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,39 | $0,55 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ018NE2LSIATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 69 W | — |
| Диапазон рабочих температур | -55 C to +150 C | -55°C to +150°C |
| Корпус | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | OptiMOS 5 (Trench) |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 35 A |
| Continuous Drain Current (ID) at TC=25°C | — | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | — | 1.1 mΩ (typical, per datasheet title) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 69 W |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | — | 4.5 V to 10 V |
| Уровень MSL | — | MSL1 (per JEDEC J-STD-020) |
| Без галогенов | — | Yes |