BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
Артикул: BSZ018NE2LSIATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.12 | $1,12 |
| 10 | $0.95 | $9,50 |
| 100 | $0.74 | $74,00 |
| 500 | $0.58 | $290,00 |
| 1.000 | $0.48 | $480,00 |
| 5.000 | $0.39 | $1.950,00 |
BSZ018NE2LSIATMA1 Обзор
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier device in which the drain-source channel is n-doped and the gate is isolated by a thin oxide layer. Within the broader semiconductor taxonomy, a MOSFET belongs to the transistor family -> field-effect transistor family -> power discrete -> power management building block. OptiMOS is Infineon's proprietary power-MOSFET platform optimized for low RDS(on) and high switching frequency; it is widely used as a synchronous rectifier, low-side switch, or load switch in switched-mode power supplies (SMPS) and battery-management systems.
Key features include 1.8 mOhm typical RDS(on) at VGS=10 V, 160 A pulsed drain current (IDM), 2.1 W power dissipation at Ta=25 C and 69 W at Tc=25 C, and integrated ESD protection. The PG-TSDSON-8-FL package provides an exposed pad for low thermal resistance, enabling direct heatsinking to the PCB copper pour. The device is RoHS compliant and qualified for industrial-grade operating temperatures of -55 C to +150 C.
The BSZ018NE2LSIATMA1 uses Infineon's advanced trench MOSFET technology, which achieves exceptionally low RDS(on) per unit silicon area by orientating the channel vertically. Compared with older planar MOSFETs of the same die size, this design reduces conduction losses by approximately 30-50% at the same load current. The result is cooler operation, smaller footprint, and higher power density in space-constrained designs.
Typical applications include DC-DC converters in computing and server power rails, synchronous rectification in telecom and networking equipment, battery management and protection in lithium-ion packs, motor control in small drones and robotics, and high-current load switches in industrial automation. The 25V rating is well-matched to 12V bus rails with generous transient headroom.
When designing with this part, prioritize PCB layout for minimum source-inductance loop: place the gate driver close to the gate pin, use wide copper pours on source/ drain, and stitch multiple vias to inner thermal layers. The exposed pad must be soldered to a sufficiently large copper area to keep junction temperature within safe limits.
This page synthesizes distributor pricing, drop-in alternatives from the OptiMOS family and competitor equivalents, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для BSZ018NE2LSIATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с BSZ018NE2LSIATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, MSL Level, Product Family.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
BSC010NE2LSIATMA1
✅ Прямая замена✓ В наличии
$0.92 / шт.
Открыть даташит →BSC015NE2LS5IATMA1
✅ Прямая замена✓ В наличии
$0.69 / шт.
Открыть даташит →BSZ011NE2LS5IATMA1
✅ Прямая замена✓ В наличии
$0.55 / шт.
Открыть даташит →IAUC90N10S5N062ATMA1
✅ Прямая замена✓ В наличии
$0.95 / шт.
Открыть даташит →BSZ024N04LS6ATMA1
✅ Прямая замена✓ В наличии
$0.46 / шт.
Открыть даташит →BSZ018NE2LSIATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A |
| Pulsed Drain Current (IDM) | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm |
| Power Dissipation at Ta=25C | 2.1 W |
| Power Dissipation at Tc=25C | 69 W |
| Диапазон рабочих температур | -55 C to +150 C |
| Корпус | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Тип монтажа | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов BSZ018NE2LSIATMA1
| Контакт 1 | Source — Source connection (pin 1) |
| Контакт 2 | Source — Source connection (pin 2) |
| Контакт 3 | Source — Source connection (pin 3) |
| Контакт 4 | Gate — Gate drive input |
| Контакт 5 | Drain — Drain connection (pin 5) |
| Контакт 6 | Drain — Drain connection (pin 6) |
| Контакт 7 | Drain — Drain connection (pin 7) |
| Контакт 8 | Drain — Drain connection (pin 8) |
Типичное применение
BSZ018NE2LSIATMA1 подходит для 6 применениеs: 12V Synchronous Rectification in DC-DC Converters, Battery Management & Protection in Lithium-Ion Packs, Motor Drive for Drones and Small Robotics, Hot-Swap and Load Switch in Telecom Equipment, Point-of-Load (POL) Converters in Server and Computing, USB Power Delivery (PD) and High-Current Charging.
12V Synchronous Rectification in DC-DC Converters
The BSZ018NE2LSIATMA1 fits 12V synchronous rectification in high-frequency buck converters where its 1.8 mOhm RDS(on) at VGS=10V minimizes conduction loss and its low Qg reduces switching loss. Placed on the low-side of a 500kHz-1MHz buck topology, it enables efficiencies above 95% while dissipating only 0.7W at 22A load. Compared with older planar MOSFETs, the OptiMOS trench process cuts switching loss by approximately 30%, allowing smaller magnetics and tighter converter footprint in space-constrained POL applications.
Рекомендуется
Battery Management & Protection in Lithium-Ion Packs
The BSZ018NE2LSIATMA1 is well suited for battery protection and discharge-path switching in 1S to 6S lithium-ion packs, where its 25V VDS rating comfortably exceeds the maximum pack voltage of 25.2V. Its 1.8 mOhm RDS(on) at 22A keeps conduction loss under 0.9W, extending runtime in portable devices, while the small TSDSON-8 footprint enables integration inside the pack housing. The -55C to +150C operating range covers automotive cold-crank and hot-soak conditions.
Рекомендуется
Motor Drive for Drones and Small Robotics
In BLDC motor-drive stages for drones and small robotics, the BSZ018NE2LSIATMA1 serves as a low-side or half-bridge switch where its 160A pulsed drain current handles motor inrush and stall conditions. The 1.8 mOhm RDS(on) keeps I2R loss manageable across 20A continuous phase currents, while the 69W power dissipation at TC=25C supports peak torque transients. Combined with its 2x3mm TSDSON-8 footprint, the part enables ultra-compact ESC designs where PCB real estate is at a premium.
Рекомендуется
Hot-Swap and Load Switch in Telecom Equipment
The BSZ018NE2LSIATMA1 is appropriate for hot-swap and inrush-current limiting circuits in telecom line cards and networking switches, where its 25V VDS rating is well above the -48V telecom bus converted to 12V. The 160A pulsed drain current handles plug-in transients, while the 1.8 mOhm RDS(on) minimizes steady-state voltage drop across the load switch. The PG-TSDSON-8-FL package is footprint-compatible with industry-standard 25V hot-swap MOSFETs, enabling direct PCB reuse.
Рекомендуется
Point-of-Load (POL) Converters in Server and Computing
For server motherboard POL converters delivering 1V-3.3V from a 12V intermediate bus, the BSZ018NE2LSIATMA1 acts as a low-side synchronous rectifier with 1.8 mOhm RDS(on) and exceptionally low gate charge. Its low Qg enables multi-MHz switching frequencies that shrink output inductors and capacitors, freeing board area for memory and processor sockets. The exposed thermal pad couples to inner-layer copper for direct heatsinking, supporting the 69W dissipation rating when used with adequate airflow.
Рекомендуется
USB Power Delivery (PD) and High-Current Charging
In USB-PD applications delivering 5V-20V at up to 5A, the BSZ018NE2LSIATMA1 functions as the high-side or low-side switch in the buck-boost converter or as a load-switch in the VBUS path. Its 25V VDS rating accommodates 20V PD output with headroom, and the 1.8 mOhm RDS(on) limits cable-side voltage drop to 45mV at 25A, preserving the negotiated PD voltage at the device. The compact TSDSON-8 footprint fits inside Type-C connector PCBs and docking stations.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для BSZ018NE2LSIATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | BSC010NE2LSIATMA1 | BSC015NE2LS5IATMA1 | BSZ011NE2LS5IATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) | PG-TSDSON-8-FL (same) |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 25 V | 40 V |
| Typical RDS(on) at VGS=10V | 1.8 mOhm | 1.0 mOhm | 1.5 mOhm | 1.1 mOhm | 2.4 mOhm |
| Continuous Drain Current (Tc=25C) | 40 A | 50 A | 44 A | 48 A | 30 A |
| Pulsed Drain Current (IDM) | 160 A | 200 A | 180 A | 180 A | 120 A |
| Power Dissipation (Tc=25C) | 69 W | 78 W | 69 W | 75 W | 69 W |
| Technology | OptiMOS trench | OptiMOS trench | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
Ключевые отличия
- Balanced low RDS(on) at competitive cost in compact TSDSON-8 footprint (против BSC010NE2LSIATMA1)
- Infineon OptiMOS trench platform for low switching loss (против IRLR120NTRPBF)
- 25V rating well-matched to 12V bus rails with margin (против BSZ024N04LS6ATMA1 (40V))
Заметки по проектированию
At 22A continuous drain current and 1.8 mOhm RDS(on), the steady-state conduction loss is approximately 0.87W. With the PG-TSDSON-8-FL package rated at 69W at TC=25C, the thermal resistance theta_JC is well below 1 C/W; however, on a JEDEC 1sq-in PCB the thermal resistance theta_JA is in the 50-70 C/W range. Provide at least 1 square inch of 2oz copper on source/drain pours and consider stitching thermal vias under the exposed pad to inner copper planes for full SOA margin.
The source pins (1-3) and drain pins (5-8) form the high-current loop; minimize parasitic inductance by using wide, short copper pours on top layer and stitching vias to inner layers. Place the gate driver IC within 5mm of pin 4 and add a 10-100 ohm gate-source resistor close to the gate pin to suppress ringing during fast switching transitions. The exposed pad must be soldered to a continuous copper pour for both thermal and electrical (drain) connection.
Do not exceed VGS ratings of +/-20V even in transient conditions; gate-oxide rupture is permanent. In half-bridge configurations, ensure dead-time insertion prevents cross-conduction during high-side/low-side hand-off. The 1.8 mOhm RDS(on) is achieved at VGS=10V; at logic-level 4.5V drive the on-resistance is significantly higher, so size the gate driver for a true 10V supply if you need the rated performance.
Информация о соответствии
RoHS compliant per Infineon product page. Halogen-free status not explicitly stated in distributor listings; default to 'unknown'. Not AEC-Q100 qualified; choose Infineon automotive-grade OptiMOS variants (suffix A or AI) for automotive applications.
