BSZ018NE2LSIATMA1 vs BSZ018NE2LSATMA1 Сравнение
Подробное сравнение бок о бок BSZ018NE2LSIATMA1 от Infineon и BSZ018NE2LSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSZ018NE2LSIATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,39 | $0,31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 22 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 69 W | — |
| Диапазон рабочих температур | -55 C to +150 C | -55C to +150C |
| Корпус | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | N-Channel Trench MOSFET |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Product Family | — | OptiMOS 25V |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Без галогенов | — | Yes |