IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
Артикул: IAUC100N04S6N015ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.34 | $134,00 |
| 500 | $1.12 | $560,00 |
| 1.000 | $0.95 | $950,00 |
| 5.000 | $0.78 | $3.900,00 |
IAUC100N04S6N015ATMA1 Обзор
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate current flow between drain and source terminals. Within the broader power semiconductor taxonomy, the IAUC100N04S6N015ATMA1 sits as a discrete N-channel enhancement-mode MOSFET, belonging to the OptiMOS-6 family of low-voltage (≤40V) trench MOSFETs optimized for synchronous rectification, motor control, and battery switching in 12 V/24 V automotive systems. Its SS08 leadless package is a member of the TDSON family that provides a low parasitic source-inductance footprint via the drain tab.
Key features include a 40 V drain-source breakdown voltage (V<sub>DS</sub>), 1.5 mΩ maximum R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, 100 A continuous drain current at case temperature 25 °C, and 100 W power dissipation. The device is qualified to AEC-Q101 for automotive use, supports a standard ±20 V gate-source voltage rating, and is rated MSL 1 for unlimited floor-life reflow compatibility.
From an architecture perspective, the IAUC100N04S6N015ATMA1 uses Infineon's latest OptiMOS-6 trench-gate cell technology to minimize R<sub>DS(on)</sub> x Q<sub>g</sub> figure of merit - critical for high-frequency synchronous buck converters where switching losses dominate. The 5x6 mm² SS08 leadless footprint allows direct attachment to PCB thermal copper, dramatically reducing junction-to-ambient thermal resistance versus traditional DPAK alternatives.
Typical applications include automotive 12 V/24 V high-current switching, electric power-steering (EPS) motor drives, braking system controllers, body-electronics load switches, and battery-disconnect units in mild-hybrid vehicles. It also serves as the synchronous rectifier MOSFET in 48 V-to-12 V DC-DC converters.
When designing with this MOSFET, use V<sub>GS</sub>=10 V drive for full enhancement-mode operation, place the gate driver within 10 mm of the gate pin to minimize parasitic inductance, and ensure the PCB drain copper pour is sized for the continuous current rating. A gate-source resistor of 10 kΩ is recommended to prevent unintended turn-on from dV/dt transients.
This page synthesizes distributor pricing, AEC-Q101 compliance verification, drop-in alternatives in the PG-TDSON-8 footprint, and thermal design guidance not found in the manufacturer datasheet alone.
Аналоги без доработки для IAUC100N04S6N015ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUC100N04S6N015ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, MSL Level, Automotive Qualification.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUC100N04S6N015
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IAUC100N08S5N043ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.72 / шт.
Открыть даташит →IAUCN04S7N006ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.95 / шт.
Открыть даташит →IAUC60N06S5L073ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.41 / шт.
Открыть даташит →IAUC100N04S6N015ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-6 40V |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A |
| Power Dissipation (P_D @ T_C=25C) | 100 W |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) |
| Gate-Source Voltage (V_GS) max | ±20 V |
| Диапазон рабочих температур | -55 C to +175 C (junction, typical) |
| Корпус | PG-TDSON-8 (SSO8) 5x6 mm |
| Тип монтажа | Surface Mount |
| Уровень MSL | 1 (unlimited floor life) |
| Automotive Qualification | AEC-Q101 |
| RoHS Compliance | Compliant |
| Lead-Free | Yes |
Конфигурация выводов IAUC100N04S6N015ATMA1
| Контакт 1 | Gate — Gate drive input (V_GS) |
| Контакт 2 | Source — Source connection |
| Контакт 3 | Source — Source connection |
| Контакт 4 | Source — Source connection |
| Контакт 5 | Drain (tab) — Drain connection and exposed thermal pad |
| Контакт 6 | Source — Source connection |
| Контакт 7 | Source — Source connection |
| Контакт 8 | Source — Source connection |
Область безопасной работы (DC)
Типичное применение
IAUC100N04S6N015ATMA1 подходит для 6 применениеs: Automotive 12V/24V High-Current Load Switch, Electric Power-Steering (EPS) Motor Drive, Synchronous Rectifier in 48V-to-12V DC-DC Buck Converter, Battery Disconnect / Pyrotechnic Switch Backup, Industrial High-Current Solenoid / Valve Driver, Hot-Swap / Inrush-Current Limiter.
Automotive 12V/24V High-Current Load Switch
The IAUC100N04S6N015ATMA1's 40 V V_DS rating and 1.5 mΩ typical R_DS(on) at V_GS=10V make it ideal for high-current body-electronics load switching on the 12V/24V automotive bus. With 100 A continuous drain current and 100 W power dissipation, it can replace electromechanical relays for switched-power loads such as headlamp modules, seat heaters, and trailer-power outlets. The AEC-Q101 qualification ensures reliability underhood where ambient temperatures routinely exceed 105 °C. Placed between the battery feed and the load with V_GS=10V from a smart-MOS gate driver, conduction loss at 50 A is only P=I²×R_DS(on)=3.75 W, dramatically lower than a relay's contact losses. The PG-TDSON-8 footprint also enables smaller PCB area than legacy DPAK switches.
Рекомендуется
Electric Power-Steering (EPS) Motor Drive
The IAUC100N04S6N015ATMA1 is well-suited as the high-current switching element in 3-phase brushless-DC motor drives for electric power-steering systems. Its 100 A continuous drain current at T_C=25 °C handles the peak torque demands of EPS motors during parking maneuvers, while the 1.5 mΩ R_DS(on) keeps I²R conduction losses under 3.75 W at 50 A - critical for ECU thermal budgets. The AEC-Q101 stress-test qualification ensures operation across -40 °C to +150 °C ambient with the reliability demanded for fail-operational steering. Placed in the three-phase inverter bridge with V_GS=10V gate drive from a 3-phase driver IC, the low R_DS(on) preserves battery runtime and reduces heat-sink mass versus DPAK alternatives.
Рекомендуется
Synchronous Rectifier in 48V-to-12V DC-DC Buck Converter
In secondary-side synchronous-rectifier positions of 48V-to-12V (or 24V-to-12V) buck converters, the IAUC100N04S6N015ATMA1's 1.5 mΩ R_DS(on) and 40 V V_DS rating make it ideal when the input bus stays below ~36V at all times. The OptiMOS-6 trench technology delivers low Q_g for reduced switching loss at high switching frequencies (200-500 kHz), enabling higher power density than older OptiMOS-3 generations. Placed on the low-side of the synchronous-rectifier node with V_GS driven by a synchronous-rectifier controller IC, the device sustains 100 A continuous at T_C=25 °C, supporting 1.2 kW converter designs. The PG-TDSON-8 footprint drains heat directly into the PCB copper pour, eliminating the heatsink.
Рекомендуется
Battery Disconnect / Pyrotechnic Switch Backup
The IAUC100N04S6N015ATMA1 can serve as a solid-state battery-disconnect switch in mild-hybrid and 12V start-stop vehicles, where it provides fail-safe isolation in parallel with the pyrotechnic battery-disconnect unit. Its 40 V V_DS rating covers 12V/24V lead-acid transients, and the 100 A continuous rating handles inrush from active loads during re-connect events. The AEC-Q101 qualification provides the automotive reliability required for safety-critical isolation. Placed in series with the battery feed with V_GS controlled by an isolated gate driver, the device's 1.5 mΩ R_DS(on) keeps steady-state voltage drop under 150 mV at 100 A - acceptable for most chassis loads.
Рекомендуется
Industrial High-Current Solenoid / Valve Driver
Beyond automotive, the IAUC100N04S6N015ATMA1 is excellent for industrial solenoid drivers, hydraulic valve controllers, and high-current PWM dimmers in factory automation. Its 40 V V_DS rating handles 24V industrial bus rails, and the 1.5 mΩ R_DS(on) minimizes heat dissipation in continuous-duty solenoid-hold applications where the coil sees 5-10 A steady-state. The PG-TDSON-8 footprint allows compact PCB designs in DIN-rail and panel-mount enclosures. Placed as a low-side switch with V_GS driven by a 10V gate driver and a 10 kΩ gate-source pull-down resistor for dV/dt immunity, the device provides reliable 100 A switching in PWM frequency ranges up to 50 kHz.
Рекомендуется
Hot-Swap / Inrush-Current Limiter
In 12V/24V telecom and server hot-swap controllers, the IAUC100N04S6N015ATMA1 serves as the series pass-element that limits inrush current when a board is plugged into a live backplane. Its 40 V V_DS rating covers 24V telecom battery plants, and the 1.5 mΩ R_DS(on) keeps steady-state voltage drop under 75 mV at 50 A - acceptable for most server point-of-load converters. The AEC-Q101 grade (even though telecom is non-automotive) provides additional thermal-cycling margin. Placed between the backplane feed and the downstream bulk capacitors with V_GS controlled by a hot-swap controller IC, the device delivers safe inrush profiles and reliable steady-state current.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUC100N04S6N015ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUC100N04S6N015 | IAUC100N08S5N043ATMA1 | IAUCN04S7N006ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 80 V | 40 V | 60 V |
| R_DS(on) typ @ V_GS=10V | 1.5 mΩ | 1.5 mΩ | 4.3 mΩ | 0.6 mΩ | 7.3 mΩ |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Ключевые отличия
- Industry's lowest R_DS(on) in PG-TDSON-8 (5x6 mm) for 40V class (против IAUC100N08S5N043ATMA1)
- Optimized for 12V/24V automotive with AEC-Q101 grade (против IAUC60N06S5L073ATMA1)
- Drop-in compatible with newer ultra-low-R_DS(on) generations (против IAUCN04S7N006ATMA1)
Заметки по проектированию
Estimated: at I_D=50 A continuous with R_DS(on)=1.5 mΩ, conduction loss is P=I²×R=50²×0.0015=3.75 W. The PG-TDSON-8 (SSO8) package has a typical theta_JC of ~1.0 C/W, giving a junction temperature rise of 3.75 C above the case - negligible for normal operation. However, PCB thermal design dominates steady-state T_J: a 1 square-inch copper pour under the drain tab achieves theta_JA ~50 C/W, allowing up to ~2.5 W dissipation at 85 °C ambient before T_J exceeds 150 °C. For higher dissipation, expand the drain copper or use thermal vias to inner copper planes.
Place the gate driver within 10 mm of the gate pin to minimize parasitic inductance that causes gate-oscillation and unwanted turn-on events. Add a 10 kΩ gate-source resistor directly at the gate pin to provide a defined pull-down path during transient dV/dt events - this prevents Miller-effect-induced turn-on in half-bridge configurations. Use a 4-layer PCB with a dedicated ground plane adjacent to the source pads; the SSO8's multiple source pins must all be soldered with thermal vias to the inner ground plane to minimize source inductance.
Do NOT use V_GS=4.5 V (logic-level) drive on this part - the IAUC100N04S6N015ATMA1 is a standard 10V-drive OptiMOS-6 device, and using logic-level V_GS will leave the MOSFET in the linear region with R_DS(on) 3-5x higher than spec, causing excessive heat. Always confirm V_GS(th) from the datasheet before choosing a gate driver. Also, do not exceed V_GS=±20 V - lower V_GS spikes from gate-driver bootstraps can puncture the gate oxide.
Информация о соответствии
RoHS compliant per DigiKey listing; AEC-Q101 automotive-qualified per Microchip USA and partgenie.ai listings; MSL 1 (unlimited floor life). REACH and halogen-free status not explicitly stated in available data - marked unknown.
