IMLT65R040M2HXTMA1 vs IMLT65R060M2HXTMA1 Сравнение
Подробное сравнение бок о бок IMLT65R040M2HXTMA1 от Infineon и IMLT65R060M2HXTMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ АктивенСравнение характеристик
| Параметр | IMLT65R040M2HXTMA1 | IMLT65R060M2HXTMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $4,25 | $5,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | — |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| Рабочая температура перехода | -55 °C to +150 °C | — |
| Корпус | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-HDSOP-16-6 (TOLT) with .XT interconnection |
| Тип монтажа | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | JEDEC-qualified for Industrial Applications |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Series | — | CoolSiC™ G2 |
| Typical RDS(on) | — | 60 mΩ |
| Maximum RDS(on) | — | 73 mΩ |
| Continuous Drain Current (Tc) | — | 40 A |
| Импульсный ток стока | — | 96 A |
| Total Power Dissipation (Tc) | — | 200 W |
| Total Gate Charge (Qg) | — | 18 nC |
| Gate-Drain Charge at 400 V (Qgd) | — | 36 nC |
| Output Capacitance Stored Energy at 400 V (Eoss) | — | 4.8 µJ |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V (benchmark) |
| Число выводов | — | 16 |