IMLT65R040M2HXTMA1 vs IMLT65R060M2HXTMA1 Comparison
Detailed side-by-side comparison of IMLT65R040M2HXTMA1 by Infineon and IMLT65R060M2HXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ ActiveSpecification Comparison
| Parameter | IMLT65R040M2HXTMA1 | IMLT65R060M2HXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.25 | $5.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | — |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| Operating Junction Temperature | -55 °C to +150 °C | — |
| Package | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-HDSOP-16-6 (TOLT) with .XT interconnection |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | JEDEC-qualified for Industrial Applications |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Series | — | CoolSiC™ G2 |
| Typical RDS(on) | — | 60 mΩ |
| Maximum RDS(on) | — | 73 mΩ |
| Continuous Drain Current (Tc) | — | 40 A |
| Pulsed Drain Current | — | 96 A |
| Total Power Dissipation (Tc) | — | 200 W |
| Total Gate Charge (Qg) | — | 18 nC |
| Gate-Drain Charge at 400 V (Qgd) | — | 36 nC |
| Output Capacitance Stored Energy at 400 V (Eoss) | — | 4.8 µJ |
| Gate Threshold Voltage (VGS(th)) | — | 4.5 V (benchmark) |
| Pin Count | — | 16 |