IPP60R180P7XKSA1 vs IPW60R041C6FKSA1 Сравнение
Подробное сравнение бок о бок IPP60R180P7XKSA1 от Infineon и IPW60R041C6FKSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IPP60R180P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | NRND |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,30 | $5,40 |
| Manufacturer | Infineon Technologies | — |
| Technology | CoolMOS P7 (Superjunction N-Channel) | CoolMOS™ C6 (Superjunction N-channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Диапазон рабочих температур | -55 °C to +150 °C | -55°C to +150°C |
| Корпус | PG-TO220-3 (through-hole) | PG-TO247-3-1 (TO-247-3) |
| Тип монтажа | Through Hole | Through Hole |
| Количество выводов | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Уровень MSL | N/A (through-hole) | Not Applicable (Through-hole) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |