IPP60R180P7XKSA1 vs IPW60R041C6FKSA1 비교
다음의 상세 나란히 비교: IPP60R180P7XKSA1 제조: Infineon 및 IPW60R041C6FKSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPP60R180P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | NRND |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.30 | $5.40 |
| Manufacturer | Infineon Technologies | — |
| Technology | CoolMOS P7 (Superjunction N-Channel) | CoolMOS™ C6 (Superjunction N-channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| 동작 온도 범위 | -55 °C to +150 °C | -55°C to +150°C |
| 패키지 | PG-TO220-3 (through-hole) | PG-TO247-3-1 (TO-247-3) |
| 실장 유형 | Through Hole | Through Hole |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 레벨 | N/A (through-hole) | Not Applicable (Through-hole) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |