IPP60R180P7XKSA1 vs IPW60R041C6FKSA1 Vergleich
Detaillierter Direktvergleich von IPP60R180P7XKSA1 von Infineon und IPW60R041C6FKSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IPP60R180P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | NRND |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,30 | $5,40 |
| Manufacturer | Infineon Technologies | — |
| Technology | CoolMOS P7 (Superjunction N-Channel) | CoolMOS™ C6 (Superjunction N-channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Betriebstemperaturbereich | -55 °C to +150 °C | -55°C to +150°C |
| Gehäuse | PG-TO220-3 (through-hole) | PG-TO247-3-1 (TO-247-3) |
| Montageart | Through Hole | Through Hole |
| Anzahl der Pins | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL-Level | N/A (through-hole) | Not Applicable (Through-hole) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |